經濟部智慧財產局員工消费合作社印製 438731 A7 ____ B7 五、發明說明（1 ) 本發明係有關於一種半導體熱處理裝置用石英玻璃治 具及其製造方法’更詳細地係有關使用在C VD裝置、或 熱擴散裝置等的半導體熱處理裝置之石英玻璃製反應管或 石英玻璃製晶圓艇、石英玻璃虛晶圓等之石英玻璃治具及 其製造方法》 因石英玻璃；係爲高純度、溶融溫度高，且酎化學藥 品性優的情形，故被使用於作爲將如矽晶圓的半導體元件 進行熱處理的過程所使用之熱處理治具。採用前述石英玻 璃治具’在砂晶圓上用 C V D (Chemical Vgpor Deposition )法等形成多晶矽膜，或將摻雜劑進行熱擴散時，會在治 具表面堆積多晶矽或摻雜劑，該多晶矽或摻雑劑在半導體 元件熱處理時會引起剝離污染半導體元件。前述多晶矽或 摻雜劑當治具表面平滑時剝離較困難，故如日本特開平1 一 1 7 0 0 1 9號公報所示粗面化內表面的爐心管等，粗 面化表面之治具被提案。前述粗面化，習知採用噴塗結晶 質二氧化矽粉等之無機粒子可機械硏磨之噴砂處理法，不 過由於利用噴砂處理法的凹凸之形成，即使其凹凸淺也會 機械破壞表面，在凹凸面之下形成具有微裂痕之層’在其 中成爲混入污染矽晶圓的物質，或者造成破壞開始裂化降 低製品強度之缺點。因此以噴砂處理法形成凹凸之後’以 氟化氫的水溶液之氫氟酸，即所謂氫氟酸做蝕刻處理’進 行微裂痕的去除爲。但是，前述蝕刻處理時深處產生之微 裂痕被除去，治具表面積變大，使尺寸精度失常’大幅影 響多晶矽膜之蒸鍍量，或者氣體反應時的氣體及其反應生 本纸張尺度通用中國國家標準（CNS)A4規格（210 X 297公釐）-4- ------------ 裝--------訂---------'^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 4 3 873 1 A7 -.....___B7_ 五、發明說明f ) 成物附著在凹凸部，擾亂反應管內的氣流，即使氣體的供 給量設爲一定時亦很難保持反應於穩定爲其問題。因此考 慮在不引起前述問題狀況下去除微裂痕的氫氟酸處理法， 不過該處理會在微裂痕內殘存雜質，成爲半導體污染源， 無法滿足使用在更進一步高純度化要求的半導體製造用之 、.r、 c=j 旧兴。 因上述微裂痕的發生是起因於機械處理石英玻璃治具 ，故基於考慮以非機械處理的化學處理而在治具表面形成 凹凸即可解決上述問題，本發明者等重新專心硏究的結果 發現，將石英玻璃治具表面以化學處理使平均表面粗度R 爲0 · 1至2. //m，最大粗度R,nax爲1至l〇vm粗面 化時，並無微裂痕的發生，即使以5%氫氟酸溶液洗淨， 平均表面粗度的變化量爲0 · 1 # m /時間以下，最大粗 度R m a X的變化量爲1 M m/時間以下，表面積增加率爲 1 0 0%以下時，除表面積變化量少之外，微細的凹凸會 均勻分佈，且氣體反應會均勻進行，針對一定氣體的供給 量可進行一定的反應，可穩定進行乾式蝕刻處理等。另外 發現，因機械強度降低少，治具的壁厚可構成較薄，製造 成本低之優點，而完成本發明。 本發明目的爲提供一種不會發生微裂痕，在表面均勻 分佈微細凹凸之半導體熱處理裝置用石英坡璃治具。 又，本發明目的爲提供一種可安定進行氣體反應，且 製造成本低之半導體熱理裝置用石英玻璃治具。 又，本發明目的爲提供一種上述半導體熱理裝置用石 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-5 - -----------裝-----I--訂 -- ----I —轉 (請先間讀背面之注恚事項再填寫本頁) ^3873 1 A7 ---------B7__ 五、發明說明$ ) 英玻璃治具之製造方法。 <請先閱讀背面之注意事項再填寫本頁> 達成上述目的之本發明，係關於由石英玻璃製成之半 導體熱處理裝置用石英玻璃治具，其表面形成之薄膜施予 蝕刻處理’平均表面粗度11；1爲〇 · 1至2//111，最大粗度 R »=> X爲1至1 0 # m之粗面化，且無微細裂紋之半導體 熱處理裝置用石央壞璃治具及其製造方法= 上述半導體熱處理裝置用石英玻璃治具，係爲譬如在 矽晶圓表面使用以氣體反應形成氧化膜或多結晶矽膜之 c VD裝置或熱擴散裝置之治具，其表面具有平均表面粗 度1^爲〇 · 1至2ym，最大粗度Rmax爲1至l〇/im 的凹凸，不產生微裂痕的半導體熱處理裝置用石英玻璃治 具。因此種不會發生微裂痕的情形，即使以5%氫氟酸溶 液洗淨石英玻璃治具，當其平均表面粗度變化量爲0 . 1 # m /時間以下，最大粗度R m x爲1 # m /時間以下， 以5 %氫氟酸溶液洗淨1 0小時時的表面積增加率爲 經濟部智慧財產局貝工消費合作社印製 1 0 0 %以下時，即使因利用氫氟酸的洗淨化處理表面積 增加量還是很少。前述表面積增加率爲1 0 0%乃爲表面 積爲兩倍之意。即使將該石英玻璃治具使用在譬如採用 S i H4氣體等之CVD過程，氣體反應不會因玻璃表面狀 態而被優亂，引起配合供給原料氣體的反應，可以很容易 將反應調整成一定。又，即使在矽晶圓近傍使用也不會因 表面積變化影響矽晶圓表面的反應生成物之蒸鍍量。 針對上述石英玻璃治具，平均表面粗度&3未滿0·1 # m，在表面爲平滑狀態’用於使用氣體的過程的情形下 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-6 - A7 4387 3 t ___B7___ 五、發明說明C ) ，氣體或/及其反應生成物很難附著在治具表面，最初必 需在石英坡璃表面附著氣體或/及其反應生成物，過程煩 雜成本高。一方面，平均表面粗度尺^超過2 時，會異 常附著氣體或其反應生成物，譬如在反應爐內產生擾亂的 氣體反應，矽晶圓上的反應生成物的蒸鍍量的調整困難。 甚至就最大粗度R m a X末滿1 # m，必需事先附著氣體或 /及其反應生成物，最大粗度R m x超過1 0 # m時矽晶 圓上的反應生成物的蒸鍍量的調整困難。 上述案例，係就在矽晶圓上形成多晶矽膜之過程做說 明，不過本發明石英玻璃治具不限於前述案例•除C V D 過程外，譬如也能有效使用在連形成氮化膜之過程、形成 氧化膜之過程。 接著，表示本發明半導體熱處理裝置用石英坡璃治具 之製造方法。 (i )利用薄膜蝕刻處理之製造方法 本製造方法，係在石英玻璃表面形成1 0 0 以下 ，理想爲0 . 1至1 0 A m的薄膜之後，做蝕刻處理在石 英玻璃治具表面形成微細凹凸之方法。前述凹凸係選擇薄 膜厚度和蝕刻處理液濃度，即可很容易製造平均表面粗度 1^;|爲0 . 1至2νπΊ’最大粗度Rmax爲1至lOjt/m的 石英玻璃治具。作爲形成前述薄膜之物質並不特別限定在 可在石英玻璃表面形成1 0 0 μΐϋ以下的薄膜之物質的無 機物質或者有機物質，最好爲有機物質。所謂有機物質， 本紙張尺度適用中國國家標準（CNS)A4規格（210^ 297公釐） (請先閱讀背面之注意事項再填寫本頁) 裝--------訂---------姨 經濟部智慧財產局貝工消費合作社印製 -7 - 438731 A7 B7 五、發明說明P ) (請先閱讀背面之注意事項再填寫本頁) 最好使用在分子中至少具有一種氧、氮、磷、矽、氟或者 金屬之各原子之有機化合物或者其混合物，具體而言，列 舉Z醇類、酚類、醛類、甲酮類、羧酸類、胺類、有機矽 化合物、有機鹵化合物、有機金屬化合物或者該些的誘導 體以及該些的混合物等。尤其是最好使用矽、甘油、脂肪 酸及其誘導體（肥皂）、氟樹脂、含氯氟烴、氟膠等。將 前述物質使用旋轉器、棒材塗漆器、塗膜器、幕式淋塗機 等之塗佈手段，在石英玻璃表面上塗佈膜厚1 0 0 以 經濟部智慧財產局員工消費合作社印製 下 > 乾燥之後在含有H F溶液或者氟的環境等做蝕刻處理 。以此處理在石英玻瑀表面形成球狀或者橢圓球狀的凹凸 。薄膜膜厚超過1 〇 〇 ^11^時 > 在含有HF溶液或者氟的 環境等做蝕刻處理薄膜，並不會剝離，殘留在未蝕刻薄膜 形成的部分，除了治具表面的平均表面粗度Ra爲0 . 1至 2 ym，而最大粗度Rmax不能爲1至1 〇 /zm外，還會 發生蝕刻斑點。薄膜未滿0 . l//m在含有HF溶液或者 氟的環境等做蝕刻處理薄膜會在短時間剝離，不會在石英 玻璃表面產生凹凸。最佳的薄膜厚度爲0 . 1至10 //m 。而蝕刻條件，譬如5%HF溶液進行30分鐘，26% H F溶液進行1 〇分鐘的處理最佳，薄膜厚的情形需要較 長的蝕刻處理時間。含有前述氟的環境，係舉例爲S F 6、 N F 3 等。 以下說明本發明之實施例，但並不依此限制本發明者 〇 再者，以下之實施例及比較例之平均粗度R a及最大粗 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） -8 - A7 438731 ___B7 _ 五、發明說明P ) 度Rmax係爲用Surf_c om3 Ο Ο B (東京精密製）所 測定的結果畫在剖面曲線，以其中心線爲基準所求的値。 而表面積的變化量係以比表面積測定器（氣體吸附法）所 求之値3 實施例1 將矽油以刷毛塗佈在石英玻璃管表面之後以高速旋轉 ，吹散剩下的矽油且形成膜厚5 的矽油膜。將該石英 玻璃管以2 5%溶液進行6 0分鐘的蝕刻處理，在表面得 到具有凹凸的石英玻璃管。前述管的平均表面粗度Rag 0 . 5 ，最大粗度RMAx爲2 »將同一個管以顯 微鏡觀察無法確認微裂痕的存在。將前述石英玻璃管以5 % H F溶液進行1 〇小時蝕刻處理的平均表面粗度R a爲 0，，最大粗度Rmax爲4#m，表面積變化率約 爲1 0%。使用此石英玻璃管在矽晶圓上以S i Ha爲原料 ，以6 0 0 °C的C V D過程將多晶矽膜蒸鍍1 〇 v m，將 矽膜以氫氟化鈉酸和硝酸的混合液蝕刻，不過表面積會大 幅變化。於是，更以S i Η 4爲原料的C V D過程將多晶矽 膜形成在矽晶圓上時，未發現對蒸鍍速度產生變化。再者 ，前述多晶矽膜的蒸鍍膜厚係以橢圓對稱法測定。 實施例2 在肥皂水的流入槽，沈沒石英玻璃管，旋轉之後拿起 乾燥。在石英玻璃管表面形成1 // m的薄膜。將前述石英 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-9， ------------^------- -訂----I I--*辞 .. ·. (請先Μ讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 A7 4 3 873 t ___—_B7____ 五、發明說明f ) 玻璃管以5 % H F溶液進行1 2 0分鐘的蝕刻時，在表面 約形成400000個/mm2直徑0.5至3.wm的球狀 或者橢圓狀的凹凸。在該石英玻璃管表面以S i 爲原料 ，在6 0 0 °C的C VD過程將多晶政膜形成2 0 //m的厚 度。針對該石英玻璃管從室溫至6 0 0 °C進行三十次的加 熱、冷卻處理之後*依目測觀察時’無法確認多晶政膜剝 離或者產生微裂痕。 · 比較例1 . 在石英玻璃管表面噴塗粒徑2 5 Ο 生碳粒子，將 石英玻璃管表面形成凹凸。所得到的石英玻璃管的平均表 面粗度1^爲2 /im，最大粗度RMAx爲1 0 yin。依顯微 鏡觀察可確認具有多數個微裂痕。將前述石英玻璃管以5 % H F溶液進行1 0小時蝕刻處理時，確認石英玻璃管的 表面變化爲大的凹凸’表面積變化率約爲3 0 0%。而且 平均粗度爲5 ，最大粗度Rmax增大爲5 0 。 使用前述石英玻璃管’在砂晶圓上以S i H4爲原料，在 6 ◦ 0°C的C VD過程將多晶矽膜蒸鍍1 〇 之後，以 氫氟化鈉酸和硝酸的混合液進行蝕刻，表面積會大幅變化 。甚至以S i Η 4爲原料，在6 0 0 t的C V D過程將多晶 矽膜形成在矽晶圓上時，多晶矽膜的蒸鍍速度慢，且在石 英玻璃管表面會異常附著多晶矽膜。 比較例2 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）-1 〇 - ------------ 裝------ I 訂--— — — — — — —^ (請先閱讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 經濟部智慧財產局員工消費合作社印製 438731 A7 _____B7 ___五、發明說明θ ) 將甘油以噴霧器塗佈在石英玻璃管表面，形成膜厚 5 0 0 4 m的甘油膜=> '將前述石英玻璃管以5 % H F溶液進行1 2 0鐘分蝕 刻處理時，在石英玻璃表面，僅形成白濁的斑點，並不會 形成凹凸。又，在前述石英坡璃管表面以S i Η4爲原料 在6 0 0 °C的C V D過程將多晶矽膜形成_2 μ m的厚度’ 從室溫至6 0 0 °C施行三十次的加熱、冷卻循環處理時’ 會在多晶矽膜產生微裂痕，甚至在多晶矽膜的一部分具有 剝離。 . 比較例3 在石英玻璃管表面以S i H4爲原料，在6 0 0 °C的 C VD過程將多晶矽膜形成2 0 的厚度，將多晶矽膜 從室溫至6 0 0 t施行三十次的加熱、冷卻循環處理時， 在多晶矽膜產生微裂痕，且在多晶矽膜的一部分具有剝離 (請先閲讀背面之注意事項再填寫本頁) 裝 - - ----訂 i !·^ 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公釐） -11-Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 438731 A7 ____ B7 V. Description of the Invention (1) The present invention relates to a quartz glass jig for semiconductor heat treatment equipment and its manufacturing method. Quartz glass reaction tubes, quartz glass wafer boats, quartz glass virtual wafers, and other quartz glass jigs and manufacturing methods for semiconductor heat treatment equipment such as thermal diffusion devices and quartz glass; high purity, melting In the case of high temperature and excellent chemical properties, it is used as a heat treatment jig used in the process of heat-treating semiconductor elements such as silicon wafers. When the aforementioned quartz glass jigs are used to form a polycrystalline silicon film on a sand wafer by a CVD (Chemical Vgpor Deposition) method or the like, or when a dopant is thermally diffused, polycrystalline silicon or a dopant is deposited on the surface of the jig. The erbium-doped agent may cause peeling and contaminate the semiconductor element during the heat treatment of the semiconductor element. The aforementioned polycrystalline silicon or dopant is difficult to peel off when the surface of the jig is smooth. Therefore, as shown in Japanese Unexamined Patent Publication No. 1-17 0 0 19, the inner surface of the furnace core tube having a roughened inner surface, etc. The tool was proposed. The aforementioned roughening is known as a sandblasting method in which inorganic particles such as crystalline silica powder can be mechanically polished. However, due to the formation of unevenness by the sandblasting method, even the shallow unevenness will mechanically damage the surface. A layer with micro-cracks is formed below the uneven surface, and becomes a substance that contaminates a contaminated silicon wafer, or causes the defect that cracks begin to occur and reduce the strength of the product. Therefore, after the unevenness is formed by the sandblasting method, the micro-cracks are removed by using hydrofluoric acid, which is an aqueous solution of hydrogen fluoride, as the so-called hydrofluoric acid as an etching treatment. However, the micro-cracks generated in the depth during the aforementioned etching process are removed, the surface area of the jig becomes larger, and the dimensional accuracy is abnormal. This greatly affects the amount of vapor deposition of the polycrystalline silicon film, or the gas used in the gas reaction and the reaction paper are of a common paper size. China National Standard (CNS) A4 Specification (210 X 297 mm) ---- -------------------------------- ^ (Please read the notes on the back before filling out this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 4 3 873 1 A7 -.....___ B7_ V. Description of the Invention f) The products are attached to the uneven parts and disturb The problem is that it is difficult to keep the reaction stable when the gas flow in the reaction tube is constant even when the amount of gas supplied is constant. Therefore, a hydrofluoric acid treatment method that removes micro-cracks without causing the aforementioned problems is considered. However, this treatment will leave impurities in the micro-cracks and become a source of semiconductor pollution. It cannot meet the requirements for semiconductor manufacturing for further high purity. .r, c = j is old. Since the occurrence of the above-mentioned microcracks is caused by mechanically treating quartz glass jigs, the above-mentioned problems can be solved based on the consideration of non-mechanical chemical treatment to form irregularities on the surface of the jig. The inventors and other researchers have found out that they have intensively studied When the surface of the quartz glass jig is chemically treated, the average surface roughness R is from 0 · 1 to 2. // m, and the maximum roughness R, nax is from 1 to 10 vm. When roughened, no micro-cracks occur. Even if washed with a 5% hydrofluoric acid solution, the average surface roughness change is 0 · 1 # m / time or less, the maximum roughness R ma X is 1 M m / time or less, and the surface area increase rate is Below 100%, in addition to the small amount of change in surface area, fine unevenness will be uniformly distributed, and the gas reaction will proceed uniformly. A certain reaction can be performed for a certain amount of gas supply, and dry etching can be performed stably. In addition, it was found that the wall thickness of the jig can be made thinner due to less reduction in mechanical strength, and the advantages of low manufacturing cost have led to the completion of the present invention. The object of the present invention is to provide a quartz glass fixture for a semiconductor heat treatment device in which microcracks do not occur and fine unevenness is evenly distributed on the surface. Another object of the present invention is to provide a quartz glass jig for a semiconductor thermal device capable of stably performing a gas reaction and having a low manufacturing cost. In addition, the object of the present invention is to provide the above-mentioned stone paper for semiconductor thermal treatment devices, which is sized for the Chinese National Standard (CNS) A4 (210 X 297 mm)-5 --- I--order----- I-turn (please read the notes on the back before filling out this page) ^ 3873 1 A7 --------- B7__ 5. Description of the invention $ ) Manufacturing method of English glass fixture. < Please read the precautions on the back before filling in this page > The present invention which achieves the above-mentioned object relates to a quartz glass jig for a semiconductor heat treatment device made of quartz glass, and a thin film formed on the surface thereof is subjected to an etching treatment. Surface roughness 11; 1 is 0.1 to 2 // 111, maximum roughness R »= > X is 1 to 10 # m roughened, and there is no micro cracks in the semiconductor heat treatment device Jig and its manufacturing method = The above-mentioned quartz glass jig for semiconductor heat treatment device is, for example, a c VD device or a thermal diffusion device using a gas reaction to form an oxide film or a polycrystalline silicon film on the surface of a silicon wafer. The surface has irregularities with an average surface roughness of 1 to 0.1 to 2 ym and a maximum roughness of Rmax of 1 to 10 / im, and a quartz glass jig for a semiconductor heat treatment device that does not generate microcracks. Therefore, micro cracks do not occur. Even if the quartz glass fixture is washed with a 5% hydrofluoric acid solution, when the average surface roughness change is 0.1 # m / time or less, the maximum roughness R mx is 1 # m / time or less, the surface area increase rate when washing with a 5% hydrofluoric acid solution for 10 hours is printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Shellfish Consumer Cooperative, and printed below 100%, even when washing with hydrofluoric acid. The increase in purification treatment surface area is still small. The aforementioned surface area increase rate of 100% means that the surface area is doubled. Even if this quartz glass jig is used in a CVD process using, for example, SiH4 gas, the gas reaction will not be disturbed by the surface state of the glass, which will cause a reaction in which the raw material gas is supplied, and the reaction can be easily adjusted to a constant level. In addition, even when used near a silicon wafer, the amount of vapor deposition of reaction products on the surface of the silicon wafer is not affected by the change in surface area. For the above-mentioned quartz glass fixtures, the average surface roughness & 3 is less than 0 · 1 # m, in the case that the surface is smooth and used for the process of using gas, this paper size applies the Chinese National Standard (CNS) A4 specification ( 210 X 297 mm) -6-A7 4387 3 t ___B7___ V. Description of the invention C), it is difficult for gas or / and its reaction products to adhere to the surface of the jig. At first, it is necessary to attach gas or / and its The reaction product is complicated and costly. On the other hand, when the average surface roughness rule exceeds 2, the gas or its reaction products are abnormally attached. For example, a disturbed gas reaction occurs in a reaction furnace, and it is difficult to adjust the amount of vapor deposition of the reaction products on a silicon wafer. Even if the maximum thickness R ma X is less than 1 # m, it is necessary to attach a gas or / and its reaction product in advance. When the maximum thickness R mx exceeds 1 0 # m, the evaporation amount of the reaction product on the silicon wafer is Difficult to adjust. The above case is a description of the process of forming a polycrystalline silicon film on a silicon wafer, but the quartz glass fixture of the present invention is not limited to the foregoing case. • In addition to the CVD process, it can also be effectively used in the process of forming a nitride film, forming Process of oxide film. Next, a method for manufacturing a quartz glass fixture for a semiconductor heat treatment apparatus of the present invention will be described. (i) Manufacturing method using thin film etching treatment The manufacturing method is to form a thin film of 100 or less, ideally 0.1 to 10 A m, on the surface of quartz glass, and then perform an etching process to form a fine surface on the surface of the quartz glass fixture. Bump method. The aforementioned unevenness system can be easily manufactured by selecting a thin film thickness and an etching treatment liquid concentration to produce a quartz glass jig having an average surface roughness of 1 ^; | which is 0.1 to 2νπΊ 'and a maximum roughness Rmax of 1 to 10jt / m. The material for forming the thin film is not particularly limited to an inorganic material or an organic material that can form a thin film of 100 μΐϋ or less on the surface of quartz glass, and an organic material is preferable. The so-called organic substances, the size of this paper applies the Chinese National Standard (CNS) A4 specification (210 ^ 297 mm) (Please read the precautions on the back before filling this page) ----- Printed by Shelley Consumer Cooperative, Intellectual Property Bureau, Ministry of Economic Affairs-7-438731 A7 B7 V. Description of Invention P) (Please read the precautions on the back before filling this page) It is best to use in the molecule with at least An organic compound of oxygen, nitrogen, phosphorus, silicon, fluorine, or metal atoms or a mixture thereof, specifically, Z alcohols, phenols, aldehydes, ketones, carboxylic acids, amines, and organic silicon compounds , Organic halogen compounds, organometallic compounds, or inducers of these and mixtures thereof. In particular, it is best to use silicon, glycerol, fatty acids and their inducers (soap), fluororesins, chlorofluorocarbons, fluorine rubber, and the like. The aforementioned substances are coated on the surface of quartz glass using a coating method such as a spinner, a bar painter, a film coater, a curtain coater, etc., and printed on the surface of the quartz glass. Next> After drying, perform an etching treatment in an environment containing an HF solution or fluorine. With this treatment, spherical or ellipsoidal irregularities are formed on the surface of the quartz glass goblet. When the film thickness exceeds 1 00 ^ 11 ^ > The etching film is not detached when it is etched in an environment containing HF solution or fluorine, etc., and remains in the portion where the unetched film is formed, except for the average surface roughness of the jig surface Ra is 0.1 to 2 ym, and the maximum roughness Rmax cannot be 1 to 10 / zm, and etching spots may occur. If the film is less than 0.1 / m, the film will be peeled off in a short time if it is etched in an environment containing HF solution or fluorine, and it will not cause unevenness on the surface of quartz glass. The optimal film thickness is 0.1 to 10 // m. Etching conditions, such as 5% HF solution for 30 minutes, and 26% H F solution for 10 minutes are the best. The thicker film requires longer etching time. Examples of the environment containing the aforementioned fluorine include S F 6 and N F 3. The following describes examples of the present invention, but does not limit the inventors accordingly. Furthermore, the average thickness R a and the maximum rough paper size of the following examples and comparative examples are applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) -8-A7 438731 ___B7 _ V. Description of the invention P) The degree Rmax is determined by using Surf_c om3 〇 〇 B (made by Tokyo Precision). Draw it on the section curve, and use its center line as the reference.値. The amount of change in surface area is determined by a specific surface area measuring device (gas adsorption method). Example 1 Silicone oil is coated on the surface of a quartz glass tube with bristles and rotated at high speed to blow off the remaining silicone oil and form a film thickness. 5 silicone oil film. This quartz glass tube was etched with a 25% solution for 60 minutes to obtain a quartz glass tube having unevenness on the surface. The average surface roughness of the aforementioned tube was Rag 0.5, and the maximum roughness RMAx was 2 »The existence of micro-cracks could not be confirmed by observing the same tube with a microscope. The quartz glass tube was etched with a 5% H F solution for 10 hours, and the average surface roughness R a was 0, the maximum roughness Rmax was 4 # m, and the surface area change rate was about 10%. Using this quartz glass tube on a silicon wafer with Si Ha as a raw material, a polycrystalline silicon film was vapor-deposited by 10 vm in a CVD process at 600 ° C, and the silicon film was etched with a mixed solution of sodium hydrofluoric acid and nitric acid. , But the surface area can vary significantly. Therefore, when the polycrystalline silicon film was formed on the silicon wafer in the C V D process using Si Η 4 as a raw material, no change in the deposition rate was found. The vapor-deposited film thickness of the polycrystalline silicon film was measured by an elliptical symmetry method. Example 2 A quartz glass tube was sunk in a soapy water inflow tank, picked up and dried after being rotated. A 1 // m thin film is formed on the surface of the quartz glass tube. Apply the aforementioned quartz paper size to Chinese National Standard (CNS) A4 (210 X 297 mm) -9, ------------ ^ ------- -Order --- -I I-* Remarks ..... (Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs A7 4 3 873 t ___ —_B7 ____ 5. Description of the invention f) Glass When the tube was etched with a 5% HF solution for 120 minutes, about 400,000 pieces / mm2 of spherical or oval unevenness with a diameter of 0.5 to 3.wm were formed on the surface. On the surface of the quartz glass tube, Si was used as a raw material, and a polycrystalline film was formed to a thickness of 20m in a CVD process at 600 ° C. After the quartz glass tube was heated and cooled 30 times from room temperature to 600 ° C, it was impossible to confirm the peeling of the polycrystalline film or the occurrence of micro-cracks after visual inspection. · Comparative Example 1. The surface of the quartz glass tube was sprayed with carbon particles having a particle size of 2 5 0 to form unevenness on the surface of the quartz glass tube. The average surface roughness 1 ^ of the obtained quartz glass tube was 2 / im, and the maximum roughness RMAx was 10 yin. Microscopic observation confirmed that there were many microcracks. When the quartz glass tube was etched with a 5% H F solution for 10 hours, it was confirmed that the surface change of the quartz glass tube was large unevenness' and the surface area change rate was about 300%. In addition, the average thickness is 5 and the maximum thickness Rmax is increased to 50. Using the aforementioned quartz glass tube 'on a sand wafer with Si H4 as a raw material, the polycrystalline silicon film was vapor-deposited at 10 ° C in a C VD process, and then etched with a mixed solution of sodium hydrofluoric acid and nitric acid. The surface area will change significantly. Even using Si Η 4 as a raw material, when a polycrystalline silicon film is formed on a silicon wafer in a CVD process of 600 t, the polycrystalline silicon film has a slow evaporation rate, and the polycrystalline silicon film is abnormally adhered on the surface of the quartz glass tube. Comparative Example 2 This paper size is in accordance with the Chinese National Standard (CNS) A4 specification (210 X 297 mm)-1 〇--------------------------------- I order — — — — — — ^ (Please read the notes on the back before filling out this page) Printed by the Intellectual Property Bureau of the Ministry of Economic Affairs, Printed by the Consumer Cooperative of the Ministry of Economic Affairs Printed by the Employees ’Cooperative of the Intellectual Property Bureau of the Ministry of Economics, printed by 438731 A7 _____B7 ___ V. Description of the Invention ) Glycerin was sprayed on the surface of the quartz glass tube with a sprayer to form a glycerin film with a thickness of 5 0 4 m = > On the glass surface, only white turbid spots are formed, and no unevenness is formed. In addition, a polycrystalline silicon film was formed to a thickness of _2 μm by a CVD process at 600 ° C using Si Η4 as a raw material on the surface of the aforementioned quartz sloped glass tube. The heating was performed 30 times from room temperature to 600 ° C. During the cooling cycle treatment, microcracks may be generated in the polycrystalline silicon film, and even a part of the polycrystalline silicon film may be peeled off. Comparative Example 3 Using Si H4 as a raw material on the surface of a quartz glass tube, a polycrystalline silicon film was formed to a thickness of 20 in a C VD process at 600 ° C, and the polycrystalline silicon film was subjected to 30 times from room temperature to 600 t. During the heating and cooling cycle treatment, micro-cracks are generated in the polycrystalline silicon film, and a part of the polycrystalline silicon film is peeled off (please read the precautions on the back before filling this page) Standards apply the national standard (CNS) A4 specification (210 X 297 mm) -11-