TW583149B - Quartz article having sand blast-treated surface and method for cleaning the same - Google Patents

Abstract

A quartz article having a sand blast-treated surface, which is produced by providing a sandblasted surface and cleaning the surface is known. In order to decrease generation of particles of such a quartz article according to the present invention it is suggested that the number of particles per 1 CF (cubic feet) generated from said surface is specified as such that number of particles of 0.2 or more and less than 0.3 mum in size is 30 or less, number of particles of 0.3 or more and less than 0.5 mum in size is 60 or less, number of particles of 0.5 or more and less than 1.0 mum in size is 60 or less, and number of particles of 1.0 mum or more in size is 10 or less. The method for cleaning quartz article according to the present invention can provide a cleaning method to eliminate impurities effectively and to decrease generation of particles, because the method combines steps of brush cleaning in an HF aqueous solution and with a nitric acid aqueous solution, brush cleaning in an organic solvent, and ultrasonic cleaning in pure water under the condition overflowing the pure water.

Description

583149 5. Description of the invention (1) --------- The technical scope of the present invention / The present invention relates to a quartz object used in a silicon wafer processing process, and a method for cleaning the quartz glass object. According to previous technology, silicon wafers are processed on silicon wafers through processes such as CVD, etching, and ashing. Quartz objects are used to polish or support this process. In the case of v, because the high temperature used in these processes is 100 ° C or higher, the difference in thermal expansion constant between Shiyang glass and silicon wafers causes stress on the contact portion of the quartz glass surface of the wafer spot. , May cause contact marks at the wafer contact ^. 77 In addition, when the substance produced in the silicon wafer processing process is deposited on the surface of the quartz broken object to form a film layer, when the glass object is cooled after the processing process, it can be because of the thermal expansion constant between the deposited film and the glass. Isolation makes glass objects crack or break. Ling

In addition, after the g 忒 glass object is cooled down as described above, if the substance has weak adhesion to the 螭 surface, the substance will fall off the surface, but if the glass surface has a small roughness and the adhesion becomes strong, the film layer will stop. The lower stage of the silicon S acoustic process will fall off the surface, causing particles to be generated, even if the unglazed object is cracked or broken. I In order to avoid the formation of contact marks and reduce the contact area with the wafer, the mouth surface treatment is provided on the surface of the quartz object to make the surface of the quartz object rough, and the surface is sandblasted uniformly.

In addition, the formation of the sandblasted surface can also make the silicon wafer processed after the silicon wafer is processed. The present invention solves this problem, but the opposite will also grab the particles of the oxidized stone. When the domain expands, it can move and fall to a size that is as small as 0.3 # m. How to avoid it It may lead to half. Therefore, one of the tests is to improve the way to avoid problems. The quartz surface of the first surface of the present invention is made, and from the eyes, set to ruler 30 or less, ruler 60 or more. Less, the ruler is deposited on the glass after sandblasting. When the sandblasting particles are self-crystallized in the glass-breaking object, the crystal grain size of the model is smaller or smaller. It is necessary to prevent the amount of this conductor wafer from being generated. The stress of the glass surface is poor. Scatter the materials facing the different glass surfaces to avoid the surface of the blasted surface from scraping off when the surface comes into contact with the wafer after cooling off, or the surface parts produced during the blasting of the object. Sand blasting causes particles in the surface area to float from the surface during the wafer processing process, causing model defects. The range is from 0.2 / zm to 5, even the particle ruler. This point may cause serious problems, especially for #m or smaller line models. In this case, small particles become a serious issue, whether the reduction of manufacturing yields. In view of these disadvantages of the conventional art, the object of the present invention is a sandblasted surface of a quartz object, and its cleaning method. 〃 ί ϋ Γ 月 一个 物 #, the object is provided with a sandblasted surface 2 by borrowing—the surface after sandblasting and cleaning the table =. Ϊ́ with t and less than °. "M number of particles is inch ί. Less than °. The number of particles of 5_ is 0.5 or more inches and the number of particles less than 1 () is 583149 5. The description of the invention (3) is less, and the number of particles on the size of 1.0 // Π1 or Π is 10 or less. In this regard, although "CF" stands for, cubic feet ,, but it is not limited to. N CF ": Of course, it can be replaced by any substantially equivalent volume unit. The number of particles in the working gas can be obtained, for example, by taking 0 · 1 CF air, using a laser beam reflector to calculate the number of particles of various particle sizes. For water Λ 1 0, use the clean air filtered by the ΕΕΡΑ filter to blow two quartz objects # in an environment of ft: 0 0 0 or lower. At this time, measure with a particle counter. Particles produced by quartz objects. In the first feature of U Ming, the generation of particles can be reduced to a considerable degree compared with traditional techniques, ▲ / 糸 石 夬 objects. / The second feature of the present invention is to invent a cleaning method for a kind of cleaning method: ¾ and female A, Shi Λ Sheng second central object method, the middle · π has a sandblasted surface quartz object method, the 'central object Based on cleanliness of 〇〇〇〇〇 or more, ^ The brush cleaning step includes: 3 to 10% HF Zhongyue Group II, clean; and after the in-service cleaning step, super-brush in a pure water towel * wave cleaning step dry. Said wave mmu and supersonic stone special; two is-a kind of "cleaning under a lower environment, the method and method ^ contains, the object system ^ 'cleanliness ritual or brush cleaning and cleaning; brushing, and cattle 2 rounds " _L Ultrasonic cleaning in pure water after washing in pure water and organic solvents;

583149 V. Description of the invention (4) and drying after the ultrasonic cleaning step i The above HF solution is scrubbed and cleaned, the quartz watch is washed and cleaned to remove quartz particles 77 ίτ, U is brushed with the above nitric acid solution. Impurities in the sand blast of the salt are ionized and removed. The solvent contained in the above organic solvent is washed and cleaned. Putian L is used to remove lipophilic organic impurities and visible water = organic solvents of 嗣 and ethanol for individual processes. , Solvent mixture of = respectively, or hydrophilic organic solvent cleaning process. θ Machine Luo agent cleaning process and — in the above-mentioned pure water ultrasonic cleaning, it is better to clean, and then replenish with high-purity pure water. …, Water, ultra-pure water. In addition, the second feature of the present invention can also be compared to the method of treating quartz objects on the surface with private sand. Beans are # species. You only have a spray degree of i, 0.00 or lower. Cleaning under the environment / The method is a clean and moist process. The process sequence includes: the first process: the process is: advance. Brushing and cleaning in clear solution, the second process: "run in pure water; brushing and cleaning in $ 3 to 10% nitric acid solution ... process: ;; in the fifth process: ultrasonic cleaning in ultrapure water; sixth, there is- Process: Ultrasonic cleaning in ultra-pure water: Erjie; and drying after the eighth system Han / month cold and wet process. Brush and clean in "m HF solution in the first process,

The blasted part is cleaned with a brush to remove the quartz particles, as previously described. This I 583149 V. Description of the invention (5) The specific concentration range is better, because the surface of the object makes the cleaning process difficult. ， Laihui will etch quartz g—In the process: scrub in 3 to 10% nitric acid solution ^ Miscellaneous ^ is also contained in the mouth of a metal salt ^ stone = outside as before. Μ Ionization removal, in the sixth process, the main solvent, organic solvent, and organic solvent are used to remove the lipophilic organic impurities and moon-water in the organic solvent, such as acrylic steel and ethanol. quality. As in the previous two, they can be used in separate processes. Solvent cleaning process for hydrophilic and hydrophilic impurities. As for hydrophilicity, ′ f is not used in the second and fourth processes of lipophilic organics. The cleaning process is performed with Λ organic solvent. Medium cleaning and cleaning, and in the fifth and seventh door processes ‧ clean in ultrapure water, each process is better to supply • super pure water supplemented with super pure water. %, 7 or ultra-pure water, and then with high purity. In addition, the present invention is also a method, before the cleaning step; the surface roughness can be made by sandblasting a protruding sleeve with uneven surface f 'which has bristles. The length should not exceed brushes for cleaning steps. According to this technical method, the impurity cleaning process is fully cleaned to the recessed area by having bristles as early as possible, because the brushes that protrude from the next interval are not allowed. A protruding parameter exceeding the surface unevenness is a flat screw super sub type or is; line j In addition, the tip of the brush bristles may be in addition to the above, the super pure water is used to replace the needle tip type. Periods of scrubbing cleaning, but Li = two kings preferably include 5 minutes or longer, while super-theta wave cleaning is 15 minutes in length under overflow conditions

Page 10 583149 V. Description of the invention (6) Minutes or longer. The above-mentioned first, second, and best brush cleaning time is 3 minutes or longer and in the six processes, each cleaning process has two organic solvents and ethanol as the organic solvent, which are used in turn for cleaning in m and are also applicable to the present invention. the way. Invention%: A technique, organic impurities can be effectively removed. Preferred Specific Examples of the Invention The present invention will be described in detail below. Iron a place ^ λ month > Consider the specific details shown in the drawings = Xian Ying w knows that the ruler arrangement method described in the preferred specific example is only for the purpose of understanding, and丨 The scope of the present invention is only limited to this specific example, unless otherwise specified. The drawings are briefly described. FIG. 1 is a schematic diagram of a specific example of a quartz object used. Figure 2 shows a schematic diagram of the process of cleaning the first half of a quartz object. Figure 3 shows a schematic diagram of the process of cleaning the second half of the quartz object. Figure 1 shows a CVD reactor. A quartz reaction tube 3 is placed at the same level to form a transparent columnar tube. The wafer 2 is placed on an internal plate through a wafer placement table 1 made of quartz glass. 5 0 ^ circle. The placement table i is used in a CVD reactor, and since the high temperature is usually used at i ^ ooo c or higher, the difference between the expansion constant of the silicon glass wafer placement table and the silicon wafer 'will be in the crystal BJ2 and Quartz glass breaks the stress, which may be caused by the contact part of the wafer. The contact marks are cut in the shape of the NC lathe. "Moxibustion, provide: ,, and sandblasting in the contact area of the Japanese Yen 2 installation. Sandblasting system not shown in Figure 1M

583149 V. Description of the invention (7) _ One one * * Process. 1 _ Although the sand blasting particles are preferably powder particles, the hardness is greater than that of quartz glass and does not cause pollution, but there are no particles containing impurities, and they can be completely free of organic impurities, even in the case of powder particles. Therefore, since the incorporation of impurities cannot be avoided, the cleaning process after the blasting process becomes indispensable. Sandblasting is generally performed by grinding or sandblasting. When S i 02 particles are used for sandblasting, the finely pulverized S i 02 particles remain in the uneven area. Therefore, the fine powder must be scraped off with a brush. In addition, since impurities other than pure Si 02 powder can also be mixed together during sandblasting, it is necessary to dissolve the impurities with nitric acid and use a brush to remove them from the uneven surface of the glass, as This will be described below. Next, a cleaning method will be described with reference to FIGS. 2 and 3. First, the roughness of the blasting area 1 a of the wafer setting table 1 is measured with a roughness measuring instrument. The pattern of the unevenness is measured with a roughness measuring instrument to obtain the interval between one protrusion and the next protrusion, and a brush having a bristle length not exceeding the interval is prepared. In addition, the shape of the bristles of the brush can be a flat-blade screwdriver type or a blade type instead of a needle tip type. After the sandblasting, the wafer setting table 1 is sucked up by a vacuum cleaner and placed in a clean room with a cleanness of 1, 000 or less before the first process. 〇 In the first process, the container 9 is filled with a 5% hydrofluoric acid (HF) aqueous solution 15 and the wafer setting table 1 is immersed in the aqueous solution 15 and the brush 8 is used to clean it for 3 minutes. After this process, the original

P.12 58314 ^ V. Description of the invention (8) The small quartz particles are slowly removed, and they are attached to, Γ, and are removed, and stopped in the recess. The particles are also subjected to organic impurities on the 1Γ particles in the second process. Also removed. Figure 6 Wetting with pure water 10 was performed. Overflow is indicated by the code 1 1 in the third process length. In this way, the impurities in the aqueous acid solution 12 are scrubbed and cleaned for 3 minutes, and the impurities are thin, and impurities other than Shiyang are contained in sandblasting, such as metal salts. Show. Into the wet with pure water 10. In the fifth process of the table with the code number 1 1, the ultrasonic wave produced in 13 is produced under the condition of 13 ultra-pure water 13 overflow U, and the soap is placed on the wafer in ultra-pure water. Order 15 minutes to remove impurities. Attached to the original, the procedure ^ The ultrasonic device is represented by code 14. Go to the 26th process of scrubbing and cleaning in an organic solvent (see. W. In the sixth process of the organic solvent, use the Shiba M β + process for 3 minutes ^ brushing and cleaning of the organic solvent ( The sixth alcohol "is an organic solvent to remove hydrophilic organic impurities. *) It is performed for 3 minutes. In the seventh process, it is cleaned and washed with ultrapure water and 3 for 5 minutes. Under conditions, ultra pure In the eighth process of water 13, under the ultra-pure water 1 3, jealousy, 由 ,,, and the master under the ultra-pure water for 15 minutes with a length of "Miscellaneous: 4 'in the overflow 11 conditions round the table 1 surface. The Ultrasonic Pei is code-named "It's originally attached to the crystal at the end, in the drying process, it's grade is clean."

Page 13 583149 V. Description of the invention (9) 1. Dry inside. An example is based on the following experiments: an experimental example based on the aforementioned cleaning process; a comparative example 1, which is after sandblasting and subsequent vacuum suction, and has a cleanliness of 1, 0, 0, 0 or more In a low-clean room environment, it was made by immersing in a 4.5% HF aqueous solution for 3 minutes and then wet with pure water; and a comparative example 2, which was made by sandblasting and vacuum cleaner, and then In a clean room environment with a cleanliness of 1, 0, 0 or lower, the ultrasonic cleaning is performed in a ultrasonic cleaning tank for 15 minutes, immersed in a 4.5% HF aqueous solution for 10 minutes, and then wet with pure water. Got. Thereafter, the number of particles of various particle size groups attached to the sample was calculated, and the results are shown in Table 1. The measurement of the number of particles is based on the clean air passing through the MPA filter being blown toward the quartz particles in a clean environment of 1, 000 or less, and the particle counter is used to calculate the number of particles generated by the quartz object at this time. After each measurement has been taken, take 0 · 1 CF (cubic feet) of clean air, calculate the number of particles in it, use the reflection of the laser beam at each particle size, and then multiply the number by 10 to get the number. result.

Page 14 583149 V. Description of the invention (10) Table 1 Particle size Um) Comparative example 1 Comparative example 2 Experimental example 0.2 or more less than 0.3 35,787 385 22 0.3 or more less than 0.5 103,771 1,206 54 0.5 or more less than 1.0 94,508 1,227 57 10 or above 75,068 868 10 Sum 309,134 3,686 143 Unit: number / CF-Table 1 shows that Comparative Examples 1 and 2 need to be immersed in a 4.5% HF aqueous solution for a length of 10 minutes or more. However, due to such long-term immersion, the surface of the quartz after sandblasting will be etched to change the roughness, and the original roughness cannot be obtained. On the contrary, 'in the experimental example, the total number of particles can be reduced to 1/25, and the number of particles smaller than 0 · 3 # m size group can be reduced to 丨 / 丨 8, or even wash "comparison of Example 2.…, system = = Example ... Describe the lipophilic organic solvent and the hydrophilic organic solvent cleaning system for the lipophilic and hydrophilic impurities :: Yi Ding ... The process makes the addition, although it is more than 1 'bar mouth 0 objects, but It is not the same as that described in the single σ 2 1 for the quartz of the wafer placement table as the support for the sand-blasted quartz object. Conversely, it can also be used for positioning, or as an indoor /, T to hold the wafer end Place it in an environment where wafers are provided for processing: 'It contains wafers placed on it,

$ 15Page 583149 V. Description of the invention (11) „Inventive effect / As mentioned above, according to the present invention, the quartz object can significantly reduce particle generation compared to the quartz object cleaned by traditional techniques. In addition, clean the quartz according to the present invention. The object method can provide a cleaning method for effectively removing impurities and reducing particle generation, because the method is combined with scrubbing and cleaning with HF aqueous solution and nitric acid aqueous solution, scrubbing and cleaning with organic solvents, and ultrasonic cleaning in pure water under pure water conditions step.

Claims (1)

583149 Case No. 89118717 Revision 6, patent application scope | Month 1 · A quartz object with a sandblasted surface is prepared by providing a sandblasted surface and cleaning the surface, wherein the surface is at 1 CF ( Cubic feet) The number of particles produced is specifically 0.2 or more and less than 0.3 / zm, the number of particles is 30 or less, the size is 0.3 or more and the number of particles less than 0.5 / zm is 60 or less, the size is 0.5 or more and less than 1.0 / zm The number of particles is 60 or less, and the size is 1.0. // // The number of particles is 10 or less. 2. —A method for cleaning quartz objects with a sandblasted surface, wherein the quartz objects are cleaned in an environment with a cleanliness of 1,000 or lower, the method includes the steps of: Appropriate combination: • Brushing and cleaning in 3 to 10% HF solution; • Brushing and cleaning in 3 to 10% nitric acid solution; and • Brushing and cleaning in organic solvents; • Ultrasonic cleaning in pure water after brushing and cleaning steps ; And • drying after the ultrasonic cleaning step. 3. —A method for cleaning quartz objects with a sandblasted surface, wherein the quartz objects are cleaned in an environment with a cleanliness of 1,000 or lower, the method includes the steps of: • rotating in HF solution and nitric acid solution Brush cleaning in the middle; • Brush cleaning in pure water and organic solvents alternately; φ • Ultrasonic cleaning in pure water after the brush cleaning step; and • Drying after the ultrasonic cleaning step. 4. A method for cleaning a quartz object having a sandblasted surface, wherein the O: \ 66 \ 66245-930219.ptc Page 18 583149 Case No. 89118717 Month > 〇 said Amendment VI. Patent application scope Quartz objects are cleaned in a clean environment of 1, 0 0 0 or lower, the method includes The steps are: • Perform a cleaning and wetting process including the following: the first process is brushed and cleaned in 3 to 10% HF solution; the second process is wetted with pure water, and the second process is cleaned and brushed in 3 to 10% nitric acid solution The fourth process is moistened with pure water. The fifth process is ultrasonic cleaning in ultrapure water. The sixth process is brush cleaning in organic solvents. The seventh process is brush cleaning in ultrapure water. The eighth process is performed in ultrapure water. Sonic cleaning; and • Dry after cleaning and moistening process. 5. If the method for cleaning a quartz object with a sandblasted surface according to any one of the claims 2, 3, and 4 further comprises the steps of: measuring the surface roughness after the sandblasting before the cleaning step; preparation A brush having a length of bristles that does not exceed the interval between one protrusion and the next protrusion on the uneven area of the surface after sandblasting; the cleaning step is performed by using the prepared brush. 6. The method for cleaning quartz objects with a sandblasted surface as described in item 4 of the scope of patent application, wherein the cleaning step in ultrapure water includes brush cleaning for a length of 5 minutes or longer, and 15 minutes under overflow conditions Or longer ultrasonic cleaning. 7. The method for cleaning quartz objects with a sandblasted surface as described in item 4 of the scope of the patent application, wherein the brush cleaning time in each of the first, third, and sixth processes is 3 minutes or longer. O: \ 66 \ 66245-930219.ptc Page 19 583149 Amendment No. 89118717 VI. Patent Application Range 8. The method for cleaning quartz objects with sandblasted surface as described in item 4 of the patent application range, in the sixth process The cleaning process of brushing in an organic solvent includes cleaning in turns using acetone and ethanol as organic solvents. O: \ 66 \ 66245-930219.ptc Page 20