JPH11106225A - Quartz glass having depressions and projections on surface and its production - Google Patents
Quartz glass having depressions and projections on surface and its productionInfo
- Publication number
- JPH11106225A JPH11106225A JP28275797A JP28275797A JPH11106225A JP H11106225 A JPH11106225 A JP H11106225A JP 28275797 A JP28275797 A JP 28275797A JP 28275797 A JP28275797 A JP 28275797A JP H11106225 A JPH11106225 A JP H11106225A
- Authority
- JP
- Japan
- Prior art keywords
- quartz glass
- spherical
- irregularities
- projections
- thin film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/001—General methods for coating; Devices therefor
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C2218/00—Methods for coating glass
- C03C2218/30—Aspects of methods for coating glass not covered above
- C03C2218/32—After-treatment
- C03C2218/328—Partly or completely removing a coating
- C03C2218/33—Partly or completely removing a coating by etching
Landscapes
- Chemical & Material Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Geochemistry & Mineralogy (AREA)
- Materials Engineering (AREA)
- Organic Chemistry (AREA)
- Glass Melting And Manufacturing (AREA)
- Surface Treatment Of Glass (AREA)
Abstract
Description
【０００１】[0001]
【産業上の利用分野】本発明は、表面に凹凸を有する石
英ガラスおよびその製造方法、さらに詳しくは表面に微
細な凹凸を有する半導体工業用石英ガラスおよびその製
造方法に関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to quartz glass having irregularities on the surface and a method for producing the same, and more particularly to quartz glass for semiconductor industry having fine irregularities on the surface and a method for producing the same.
【０００２】[0002]
【従来の技術】従来、半導体素子の製造には高純度で、
比較的耐熱性が高く、しかも耐薬品性の高い石英ガラス
製治具が広く使われている。そして前記治具の表面には
意識的に凹凸を設けることが多く、例えば実公昭６１−
８８２３３号公報には内面が凹凸面にされたＬＰＣＶＤ
用炉心管が、また、特開平１−１７００１９号公報には
ウエハー載置溝の表面がサンドブラストで凸部が形成さ
れたウエハー載置用ボートがそれぞれ記載されている。
こうした石英ガラス表面の凹凸は、いわゆるフロスト処
理で形成するのが一般的であるが、フロスト処理は結晶
質二酸化珪素粉を吹き付け、石英ガラス表面を削り取る
処理であるところから、凹凸の形成とともにマイクロク
ラックが発生し、石英ガラスの赤外線散乱反射率を変化
させるばかりでなく、その後のＨＦ溶液によるエッチン
グ処理で、マイクロクラックが選択的にエッチングされ
て粗面化され、そこにエッチング処理液が付着したり、
或はパーティクルが発生し、半導体製品を汚染する等の
問題があった。また、フロスト処理で得た石英ガラス
は、その凹凸が大きく半導体素子製造におけるＣＶＤ工
程で形成する二酸化珪素膜などの酸化膜との密着性が悪
く剥離し易いなどの欠点もあった。2. Description of the Related Art Conventionally, high purity semiconductor devices have been manufactured.
Quartz glass jigs having relatively high heat resistance and high chemical resistance are widely used. In many cases, irregularities are intentionally provided on the surface of the jig.
No. 88233 discloses LPCVD with an uneven inner surface.
Japanese Patent Laid-Open Publication No. 1-170019 discloses a wafer mounting boat in which the surface of a wafer mounting groove is sandblasted to form a convex portion.
Such irregularities on the quartz glass surface are generally formed by a so-called frost treatment.However, since the frost treatment is a process of spraying crystalline silicon dioxide powder and shaving the quartz glass surface, the formation of the irregularities and the formation of micro cracks Not only changes the infrared scattering reflectance of the quartz glass, but also causes the microcracks to be selectively etched and roughened by the subsequent etching treatment with the HF solution, and the etching treatment liquid adheres to the cracks. ,
Alternatively, there is a problem that particles are generated and contaminate semiconductor products. In addition, the quartz glass obtained by the frost treatment has a defect that the unevenness is large and the adhesion to an oxide film such as a silicon dioxide film formed in a CVD step in the production of a semiconductor element is poor and the glass is easily peeled off.
【０００３】[0003]
【発明が解決しようとする課題】こうした現状に鑑み、
本発明者等は鋭意研究を重ねた結果、石英ガラス表面に
１０μｍ以下の球状または楕円球状の凹凸を有し、マイ
クロクラックの発生がない石英ガラスを用いて作成した
半導体処理用部材は、半導体製品を不純物元素やパーテ
ィクルで汚染することのなく、しかも半導体製造のＣＶ
Ｄ工程で形成する酸化膜との密着性に優れ熱サイクルに
おいても剥離しにくいことを見出した。そして前記表面
に凹凸を有する石英ガラスはその表面に１００μｍ以下
の薄膜を形成し、それをＨＦ溶液またはフッ素を含有す
る雰囲気などでエッチング処理することで容易に製造で
きることをも見出し、本発明を完成したものである。す
なわちIn view of the current situation,
The present inventors have conducted intensive studies and found that a semiconductor processing member made of quartz glass having spherical or elliptical spherical irregularities of 10 μm or less on the quartz glass surface and having no microcracks is a semiconductor product. Is not contaminated with impurity elements and particles, and the CV of semiconductor manufacturing
It has been found that the adhesiveness to the oxide film formed in the step D is excellent and it is difficult to peel off even in a heat cycle. The present inventors have also found that quartz glass having irregularities on the surface can be easily manufactured by forming a thin film of 100 μm or less on the surface and etching it in an HF solution or an atmosphere containing fluorine. It was done. Ie
【０００４】本発明は、表面に球状または楕円球状の凹
凸を有し、マイクロクラックのない石英ガラスを提供す
ることを目的とする。An object of the present invention is to provide a quartz glass having a spherical or elliptical spherical unevenness on its surface and free from microcracks.
【０００５】また、本発明は、ＣＶＤ工程で形成される
酸化膜との密着性に優れ、パーティクルや不純物元素に
よる半導体製品の汚染がなく、かつ洗浄が容易な半導体
処理用石英ガラス部材を提供することを目的とする。Another object of the present invention is to provide a quartz glass member for semiconductor processing which has excellent adhesion to an oxide film formed in a CVD process, is free from contamination of semiconductor products by particles or impurity elements, and is easy to clean. The purpose is to:
【０００６】さらに、本発明は、上記石英ガラスの製造
方法を提供することを目的とする。Another object of the present invention is to provide a method for producing the above quartz glass.
【０００７】[0007]
【課題を解決するための手段】上記目的を達成する本発
明は、表面に凹凸を有する石英ガラスであって、前記凹
凸が直径１０μｍ以下の球状または楕円球状である表面
に凹凸を有する石英ガラスおよびその製造方法に係る。According to the present invention, there is provided a quartz glass having irregularities on its surface, wherein the irregularities are spherical or elliptical spherical having a diameter of 10 μm or less. Related to the manufacturing method.
【０００８】本発明の石英ガラスは、例えば炉芯管、ウ
ェーハ載置用ボート等、半導体工業で使用される治具に
代表される部材の素材として有用で、その表面の一部又
は全部に直径１０μｍ以下の球状または楕円球状の凹凸
を有し、マイクロクラックのない石英ガラスである。よ
り好ましくは前記凹凸が１００００ケ／ｍｍ2以上存在
する石英ガラスがよい。このように直径１０μｍ以下の
球状または楕円球状の凹凸が１００００ケ／ｍｍ2以上
存在することで、二酸化珪素膜など熱膨張係数の異なる
酸化膜もＣＶＤ工程で密着性よく石英ガラス表面に形成
されても、熱サイクルの加熱、冷却によっても剥離する
ことが少ない。また、マイクロクラックの発生がないと
ころから、マイクロクラックに基づく赤外線散乱反射率
の変化が起ることがない上に、マイクロクラックに付着
した不純物元素や該マイクロクラックに起因するパーテ
ィクルによる汚染がなく、しかも洗浄が容易である。前
記石英ガラスの表面の凹凸が球状または楕円球状である
ところから、長時間のエッチング処理でも凹凸が殆ど変
化せず、仮令エッチング処理で球状同志の境界部分が鋭
くとがっても、全体として表面状態が殆ど変ることがな
い。前記直径１０μｍ以下の球状または楕円球状の凹凸
とは、石英ガラス表面のすべての凹凸の内、５０％以上
が直径１０μｍ以下の球状または楕円球状であることを
いう。前記凹凸の直径が１０μｍを超える凹凸は石英ガ
ラス表面に形成する薄膜の分子サイズを大きくする必要
があり、使用できる薄膜が限定される上に、表面粗さが
粗くなり、二酸化珪素などの酸化膜の密着性に劣り熱サ
イクルで酸化膜の剥離が起る。また、直径が１０μｍを
超える球状または楕円球状の凹凸を１００００ケ／ｍｍ
2以上形成することは困難である。The quartz glass of the present invention is useful as a material for members represented by jigs used in the semiconductor industry, for example, furnace core tubes, wafer mounting boats, etc. It is a quartz glass having spherical or elliptical spherical irregularities of 10 μm or less and no micro cracks. More preferably, quartz glass having the irregularities of 10,000 or more / mm 2 is preferable. The presence in this way irregularities in the following spherical or oval-spherical diameter 10μm 10000 Ke / mm 2 or more, are formed on the adhesion good quartz glass surface with different oxide film also CVD process thermal expansion coefficient such as silicon dioxide film Also, peeling is hardly caused by heating and cooling in a heat cycle. In addition, since there is no occurrence of microcracks, there is no change in infrared scattering reflectance based on microcracks, and there is no contamination by impurity elements attached to microcracks or particles caused by the microcracks, Moreover, cleaning is easy. Since the irregularities on the surface of the quartz glass are spherical or elliptical spherical, the irregularities hardly change even in a long-time etching process, and even when the boundary portion between the spherical members sharply sharpens in the temporary etching process, the overall surface state is changed. Almost unchanged. The spherical or elliptical irregularities having a diameter of 10 μm or less mean that 50% or more of all irregularities on the quartz glass surface are spherical or elliptical spherical having a diameter of 10 μm or less. When the diameter of the irregularities exceeds 10 μm, it is necessary to increase the molecular size of the thin film formed on the surface of quartz glass, and the usable thin films are limited, and the surface roughness becomes coarse, and an oxide film such as silicon dioxide is formed. The oxide film is peeled off by thermal cycling due to poor adhesion. In addition, spherical or elliptical spherical irregularities having a diameter of more than 10 μm
It is difficult to form two or more.
【０００９】上記本発明の石英ガラスは、石英ガラス表
面に１００μｍ以下の薄膜を形成したのちＨＦ溶液また
はフッ素を含有する雰囲気などでエッチング処理するこ
とで製造できる。前記エッチング処理としては、フッ酸
溶液によるエッチング処理やプラズマエッチング処理な
どが挙げられる。また、薄膜を形成する物質としては石
英ガラス表面に１００μｍ以下の薄膜を形成できる物質
であれば無機物質でもまた有機物質でもよく特に制限さ
れないが、好ましくは有機物質からなる薄膜がよい。有
機物質としては分子中に酸素、窒素、リン、珪素、フッ
素または金属の各原子を少なくとも１つ有する有機化合
物またはその混合物が好ましく使用でき、具体的には、
アルコール類、フェノール類、アルデヒド類、ケトン
類、カルボン酸類、アミン類、有機珪素化合物、有機ハ
ロゲン化合物、有機金属化合物またはそれらの誘導体お
よびそれらの混合物などが挙げられる。特にシリコー
ン、グリセリン、脂肪酸およびその誘導体、フッ素樹
脂、クロロフルオロカーボン、フッ素ゴムなどが好適に
使用される。The quartz glass of the present invention can be manufactured by forming a thin film having a thickness of 100 μm or less on the surface of the quartz glass and then performing etching in an HF solution or an atmosphere containing fluorine. Examples of the etching treatment include an etching treatment with a hydrofluoric acid solution and a plasma etching treatment. The substance forming the thin film may be an inorganic substance or an organic substance as long as it can form a thin film having a thickness of 100 μm or less on the surface of quartz glass, and is not particularly limited, but a thin film made of an organic substance is preferable. As the organic substance, an organic compound having at least one atom of oxygen, nitrogen, phosphorus, silicon, fluorine or metal in a molecule or a mixture thereof can be preferably used. Specifically,
Examples include alcohols, phenols, aldehydes, ketones, carboxylic acids, amines, organosilicon compounds, organic halogen compounds, organometallic compounds or derivatives thereof, and mixtures thereof. In particular, silicone, glycerin, fatty acids and their derivatives, fluororesins, chlorofluorocarbons, fluororubbers and the like are preferably used.
【００１０】本発明の石英ガラスの製造方法の一例を以
下に示す。すなわち、石英ガラス表面に薄膜を形成する
物質をスピンナー、バーコーター、アップリケーター、
カーテンフローなどの塗布手段を用いて膜厚１００μｍ
以下、好ましくは０．１〜１０μｍに塗布し、乾燥した
のちＨＦ溶液またはフッ素を含有する雰囲気などでエッ
チング処理することからなる製造方法である。前記製造
方法で薄膜の膜厚が１００μｍを超えるとＨＦ溶液また
はフッ素を含有する雰囲気などでエッチング処理で薄膜
が剥離せず、薄膜の形成された部分がエッチングされず
に残り、球状または楕円球状の凹凸を形成できない上
に、エッチングムラも発生して好ましくない。また、薄
膜が０．１μｍ未満ではＨＦ溶液またはフッ素を含有す
る雰囲気などでエッチング処理で薄膜が短時間に剥離
し、石英ガラス表面に凹凸が生じない。好適なエッチン
グ条件としては、例えば５％ＨＦ溶液で３０分、２６％
ＨＦ溶液で１０分程度の処理がよいが、薄膜が厚い場合
にはエッチング処理時間を長くする必要がある。また、
フッ素を含有する雰囲気としてはＳＦ6、ＮＦ3などが挙
げられる。An example of the method for producing quartz glass of the present invention will be described below. That is, spinner, bar coater, applicator,
Using a coating method such as curtain flow, a film thickness of 100 μm
The following is a manufacturing method comprising applying a coating having a thickness of preferably 0.1 to 10 μm, drying and then etching in an HF solution or an atmosphere containing fluorine. When the thickness of the thin film exceeds 100 μm in the above manufacturing method, the thin film does not peel off by etching treatment in an atmosphere containing HF solution or fluorine, the portion where the thin film is formed remains without being etched, and a spherical or oval spherical shape Unevenness cannot be formed, and etching unevenness occurs. When the thickness of the thin film is less than 0.1 μm, the thin film is peeled off in a short time by etching in an HF solution or an atmosphere containing fluorine, and no irregularities are formed on the quartz glass surface. Suitable etching conditions include, for example, a 5% HF solution for 30 minutes, 26%
The treatment with the HF solution for about 10 minutes is good, but when the thin film is thick, it is necessary to lengthen the etching treatment time. Also,
Examples of the atmosphere containing fluorine include SF 6 and NF 3 .
【００１１】上記ＨＦ溶液またはフッ素を含有する雰囲
気などでエッチング処理で石英ガラス表面に球状または
楕円球状の凹凸が形成されるのは、薄膜が形成されてい
る部分のエッチングが抑制されるが、薄膜が薄い場合に
は薄膜の分子形状に沿ってＨＦ溶液またはフッ素を含有
する雰囲気が浸透しガラス表面を部分的にエッチングす
ることに起因するものと考えられる。したがって、薄膜
が厚い場合にはＨＦ溶液またはフッ素を含有する雰囲気
が石英ガラス表面まで浸透することができないので球状
または楕円球状の凹凸の形成が困難となる。The formation of spherical or elliptical irregularities on the surface of quartz glass by etching in the above-mentioned HF solution or an atmosphere containing fluorine is because the etching of the portion where the thin film is formed is suppressed. When the thickness is small, it is considered that the HF solution or the atmosphere containing fluorine permeates along the molecular shape of the thin film and partially etches the glass surface. Therefore, when the thin film is thick, the HF solution or the atmosphere containing fluorine cannot penetrate to the quartz glass surface, and it is difficult to form spherical or elliptical spherical irregularities.
【００１２】[0012]
【発明の実施の形態】次に本発明の実施例について述べ
るがこれによって本発明はなんら限定されるものではな
い。DESCRIPTION OF THE PREFERRED EMBODIMENTS Next, embodiments of the present invention will be described, but the present invention is not limited thereto.
【００１３】[0013]
実施例１ 石鹸水のはいった槽に、石英ガラスチューブを沈め、回
転したのち引上げて乾燥した。石英ガラス表面には１μ
ｍの薄膜が形成されていた。前記石英ガラスチューブを
５％ＨＦ溶液で１２０分のエッチングしたところ、表面
に図１にみるように直径０．５〜３μｍの球状もしくは
楕円球状の凹凸が約４０００００ケ／ｍｍ2形成されて
いた。この石英ガラスチューブ表面にＳｉＨ4を原料と
して、６００℃のＣＶＤ工程でＰｏｌｙＳｉ膜を２０μ
ｍの厚さに形成した。この石英ガラスチューブについて
室温から６００℃までの加熱・冷却サイクル処理を３０
回行ったのち、目視による観察をしたところ、Ｐｏｌｙ
Ｓｉ膜に剥離やマイクロクラックの発生が確認できなか
った。Example 1 A quartz glass tube was immersed in a tank filled with soapy water, rotated, pulled up and dried. 1μ on quartz glass surface
m was formed. The was a quartz glass tube of 120 minutes 5% HF solution etching, spherical or irregularities of an ellipse spherical diameter 0.5~3μm As seen in Figure 1 on the surface had been about 400,000 Ke / mm 2 formed. Using a SiH 4 material as a raw material, a PolySi film having a thickness of 20 μ
m. This quartz glass tube was subjected to 30 heating / cooling cycles from room temperature to 600 ° C.
After performing the measurements twice, visual observation revealed that
No peeling or microcracks were found on the Si film.
【００１４】実施例２ 石英ガラスチューブにシリコーンオイルを刷毛で塗布し
たのち高速で回転して、余分のシリコーンオイルを吹き
飛ばし膜厚６μｍのシリコーンオイル膜を形成した。前
記石英ガラスチューブを２５％ＨＦ溶液で６０分のエッ
チング処理したところ、その表面には図２にみるような
直径１〜８μｍの球状もしくは楕円球状の凹凸が約８０
０００ケ／ｍｍ2形成されていた。この石英ガラス表面
にＳｉＨ4を原料として、６００℃のＣＶＤ工程でＰｏ
ｌｙＳｉ膜を２０μｍの厚さに形成し、それに室温から
６００℃までの加熱・冷却サイクル処理を３０回施し
た。処理後の石英ガラスチューブについて目視による観
察を行ったが、ＰｏｌｙＳｉ膜の剥離やマイクロクラッ
クの発生が確認できなかった。Example 2 A silicone oil was applied to a quartz glass tube with a brush and then rotated at high speed to blow off excess silicone oil to form a silicone oil film having a thickness of 6 μm. When the quartz glass tube was etched with a 25% HF solution for 60 minutes, spherical or elliptical spherical irregularities having a diameter of 1 to 8 μm as shown in FIG.
000 pieces / mm 2 were formed. The surface of this quartz glass is made of Po using SiH 4 as a raw material in a CVD process at 600 ° C.
A lySi film was formed to a thickness of 20 μm, and a heating / cooling cycle treatment from room temperature to 600 ° C. was performed 30 times. Visual observation was performed on the quartz glass tube after the treatment, but no peeling of the PolySi film or generation of microcracks could be confirmed.
【００１５】比較例１ グリセリンを石英ガラスチューブ表面に噴霧器で塗布し
て膜厚５００μｍのグリセリン膜を形成した。前記石英
ガラスチューブを５％ＨＦ溶液で１２０分のエッチング
処理をしたところ、石英ガラス表面には、まだらな白濁
が形成されただけで、凹凸の形成がなかった。また、前
記石英ガラスチューブ表面にＳｉＨ4を原料として、６
００℃のＣＶＤ工程でＰｏｌｙＳｉ膜を２０μｍの厚さ
に形成し、室温から６００℃までの加熱・冷却サイクル
処理を３０回施したところ、ＰｏｌｙＳｉ膜にはマイク
ロクラックが発生し、さらにＰｏｌｙＳｉ膜の一部に剥
離があった。Comparative Example 1 Glycerin was applied to the surface of a quartz glass tube with a sprayer to form a glycerin film having a thickness of 500 μm. When the quartz glass tube was subjected to an etching treatment with a 5% HF solution for 120 minutes, only a mottled white turbidity was formed on the quartz glass surface, and no irregularities were formed. Furthermore, the SiH 4 as a raw material in the quartz glass tube surface, 6
A PolySi film having a thickness of 20 μm was formed in a CVD process at 00 ° C., and a heating / cooling cycle treatment from room temperature to 600 ° C. was performed 30 times. As a result, microcracks were generated in the PolySi film, There was peeling in the part.
【００１６】比較例２ 石英ガラスチューブ表面にＳｉＨ4を原料として、６０
０℃のＣＶＤ工程でＰｏｌｙＳｉ膜を２０μｍ厚さに形
成し、それを室温から６００℃までの加熱・冷却サイク
ル処理を３０回施したところ、ＰｏｌｙＳｉ膜にマイク
ロクラックが発生し、ＰｏｌｙＳｉ膜の一部に剥離があ
った。Comparative Example 2 SiH 4 was used as a raw material on a quartz glass
A PolySi film having a thickness of 20 μm was formed by a CVD process at 0 ° C. and subjected to a heating / cooling cycle process from room temperature to 600 ° C. 30 times. As a result, micro cracks occurred in the PolySi film, and a part of the PolySi film was formed. Peeled off.
【００１７】[0017]
【発明の効果】本発明の石英ガラスは、表面に微細な球
状または楕円球状の凹凸が均一に形成され、マイクロク
ラックのない石英ガラスである。この石英ガラスで作成
した半導体処理用部材は例えば半導体製品製造における
ＣＶＤ工程で形成した二酸化珪素などの酸化膜の密着性
がよく、しかも不純物元素やパーティクルによる半導体
製品の汚染を起すことがなく、しかも洗浄が容易であ
る。前記石英ガラスは石英ガラス表面に薄膜を形成し、
それをＨＦ溶液またはフッ素を含有する雰囲気などでエ
ッチング処理することで容易に製造できる。The quartz glass of the present invention is a quartz glass in which fine spherical or elliptical spherical irregularities are uniformly formed on the surface and free from microcracks. For example, a semiconductor processing member made of quartz glass has good adhesion of an oxide film such as silicon dioxide formed in a CVD process in the manufacture of semiconductor products, and does not cause contamination of semiconductor products by impurity elements or particles. Easy to clean. The quartz glass forms a thin film on the quartz glass surface,
It can be easily manufactured by etching it in an HF solution or an atmosphere containing fluorine.
図１、２は、本発明の石英ガラス表面の走査電子顕微鏡
２次電子像写真である。1 and 2 are photographs of a secondary electron image of the surface of the quartz glass of the present invention taken with a scanning electron microscope.
Claims (6)
前記凹凸が直径１０μｍ以下の球状または楕円球状であ
ることを特徴とする表面に凹凸を有する石英ガラス。1. Quartz glass having irregularities on its surface,
A quartz glass having irregularities on its surface, wherein the irregularities are spherical or elliptical spherical with a diameter of 10 μm or less.
００００ケ／ｍｍ2有することを特徴とする請求項１記
載の表面に凹凸を有する石英ガラス。2. The method according to claim 1, wherein at least one spherical or elliptical spherical unevenness is formed.
The quartz glass having irregularities on its surface according to claim 1, wherein the quartz glass has 0000 / mm 2 .
しないことを特徴とする請求項１又は２記載の表面に凹
凸を有する石英ガラス。3. The quartz glass having irregularities on its surface according to claim 1, wherein no microcracks are present on the quartz glass surface.
形成したのち、エッチング処理することを特徴とする表
面に凹凸を有する石英ガラスの製造方法。4. A method for producing quartz glass having irregularities on its surface, comprising forming a thin film having a thickness of 100 μm or less on the surface of quartz glass and etching the film.
特徴とする請求項４記載の表面に凹凸を有する石英ガラ
スの製造方法。5. The method according to claim 4, wherein the thin film is a thin film made of an organic substance.
ッ素、窒素または金属の各原子の少なくとも１つを有す
る有機化合物またはそれらの混合物であることを特徴と
する請求項５記載の表面に凹凸を有する石英ガラスの製
造方法。6. The surface according to claim 5, wherein the organic substance is an organic compound having at least one of each atom of oxygen, phosphorus, silicon, fluorine, nitrogen or metal in a molecule or a mixture thereof. For producing quartz glass having irregularities on the surface.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28275797A JP3929138B2 (en) | 1997-09-30 | 1997-09-30 | Quartz glass having irregularities on the surface and method for producing the same |
| TW086118251A TW438731B (en) | 1997-09-30 | 1997-12-04 | Quartz glass jig for semiconductor heat treatment apparatus and a method of producing thereof |
| KR1019970071442A KR100304338B1 (en) | 1997-09-30 | 1997-12-20 | Quartz glass jig for heat-treating semiconductor, and process for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28275797A JP3929138B2 (en) | 1997-09-30 | 1997-09-30 | Quartz glass having irregularities on the surface and method for producing the same |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11106225A true JPH11106225A (en) | 1999-04-20 |
| JP3929138B2 JP3929138B2 (en) | 2007-06-13 |
Family
ID=17656675
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28275797A Expired - Lifetime JP3929138B2 (en) | 1997-09-30 | 1997-09-30 | Quartz glass having irregularities on the surface and method for producing the same |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3929138B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP1187170A2 (en) * | 2000-08-29 | 2002-03-13 | Heraeus Quarzglas GmbH & Co. KG | Plasma resistant quartz glass jig |
| WO2002011166A3 (en) * | 2000-07-31 | 2002-07-04 | Heraeus Quarzglas | Quartz glass jig for processing apparatus using plasma |
| US7081290B2 (en) | 2002-04-04 | 2006-07-25 | Tosoh Corporation | Quartz glass thermal sprayed parts and method for producing the same |
| US7338699B2 (en) * | 2002-10-31 | 2008-03-04 | Tosoh Corporation | Island projection-modified part, method for producing the same, and apparatus comprising the same |
| JP2010087525A (en) * | 2000-03-21 | 2010-04-15 | Sharp Corp | Surface processing method |
-
1997
- 1997-09-30 JP JP28275797A patent/JP3929138B2/en not_active Expired - Lifetime
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010087525A (en) * | 2000-03-21 | 2010-04-15 | Sharp Corp | Surface processing method |
| WO2002011166A3 (en) * | 2000-07-31 | 2002-07-04 | Heraeus Quarzglas | Quartz glass jig for processing apparatus using plasma |
| US6869898B2 (en) | 2000-07-31 | 2005-03-22 | Heraeus Quarzglas Gmbh & Co. Kg | Quartz glass jig for processing apparatus using plasma |
| EP1187170A2 (en) * | 2000-08-29 | 2002-03-13 | Heraeus Quarzglas GmbH & Co. KG | Plasma resistant quartz glass jig |
| EP1187170A3 (en) * | 2000-08-29 | 2002-06-12 | Heraeus Quarzglas GmbH & Co. KG | Plasma resistant quartz glass jig |
| US6680455B2 (en) | 2000-08-29 | 2004-01-20 | Heraeus Quarzglas Gmbh & Co. Kg | Plasma resistant quartz glass jig |
| SG116424A1 (en) * | 2000-08-29 | 2005-11-28 | Shinetsu Quartz Prod | Plasma resistant quartz glass jig. |
| US7081290B2 (en) | 2002-04-04 | 2006-07-25 | Tosoh Corporation | Quartz glass thermal sprayed parts and method for producing the same |
| US7338699B2 (en) * | 2002-10-31 | 2008-03-04 | Tosoh Corporation | Island projection-modified part, method for producing the same, and apparatus comprising the same |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3929138B2 (en) | 2007-06-13 |
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