TW435883U - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
TW435883U
TW435883U TW088205693U TW88205693U TW435883U TW 435883 U TW435883 U TW 435883U TW 088205693 U TW088205693 U TW 088205693U TW 88205693 U TW88205693 U TW 88205693U TW 435883 U TW435883 U TW 435883U
Authority
TW
Taiwan
Prior art keywords
semiconductor laser
laser device
semiconductor
laser
Prior art date
Application number
TW088205693U
Other languages
English (en)
Inventor
Shinji Sato
Akaru Usui
Kyouko Fukumura
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of TW435883U publication Critical patent/TW435883U/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/024—Arrangements for thermal management
    • H01S5/02407—Active cooling, e.g. the laser temperature is controlled by a thermo-electric cooler or water cooling
    • H01S5/02423—Liquid cooling, e.g. a liquid cools a mount of the laser
TW088205693U 1998-01-30 1998-02-04 Semiconductor laser device TW435883U (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP1998/000402 WO1999039412A1 (fr) 1998-01-30 1998-01-30 Dispositif a laser a semi-conducteur

Publications (1)

Publication Number Publication Date
TW435883U true TW435883U (en) 2001-05-16

Family

ID=14207528

Family Applications (1)

Application Number Title Priority Date Filing Date
TW088205693U TW435883U (en) 1998-01-30 1998-02-04 Semiconductor laser device

Country Status (4)

Country Link
EP (1) EP0973237A4 (zh)
CA (1) CA2285390A1 (zh)
TW (1) TW435883U (zh)
WO (1) WO1999039412A1 (zh)

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10018421A1 (de) * 2000-04-13 2001-10-25 Haas Laser Gmbh & Co Kg Diodenlasereinrichtung
US6791181B2 (en) 2000-11-29 2004-09-14 Mitsubishi Chemical Corporation Semiconductor light emitting device
JP2002280659A (ja) * 2001-03-16 2002-09-27 Furukawa Electric Co Ltd:The レーザダイオードモジュールからなる光源
JP3878869B2 (ja) 2002-03-06 2007-02-07 浜松ホトニクス株式会社 半導体発光装置
JP2006184538A (ja) * 2004-12-27 2006-07-13 Fuji Photo Film Co Ltd 冷却装置、露光描画装置、及び冷媒供給方法
DE502008002625D1 (de) * 2008-09-01 2011-03-31 Iie Ges Fuer Innovative Industrieelektronik Mbh Laserdioden-Anordnung
US8804781B2 (en) 2012-10-29 2014-08-12 Coherent, Inc. Macro channel water-cooled heat-sink for diode-laser bars
US8804782B2 (en) 2012-10-29 2014-08-12 Coherent, Inc. Macro-channel water-cooled heat-sink for diode-laser bars
JP5764152B2 (ja) * 2013-02-13 2015-08-12 株式会社フジクラ 半導体レーザ装置
CN105281198A (zh) * 2014-05-30 2016-01-27 中国科学院理化技术研究所 一种半导体激光器的热管理装置
WO2016009622A1 (ja) 2014-07-14 2016-01-21 パナソニックＩｐマネジメント株式会社 半導体レーザ装置
CN107221834A (zh) * 2017-05-16 2017-09-29 西安炬光科技股份有限公司 半导体激光器的封装结构及封装方法
CN110809841B (zh) * 2017-07-07 2021-04-16 松下知识产权经营株式会社 半导体激光装置
JPWO2019021802A1 (ja) * 2017-07-26 2020-05-28 パナソニック株式会社 半導体レーザ素子及び半導体レーザ装置
DE102018210139B4 (de) * 2018-06-21 2021-02-18 Trumpf Photonics, Inc. Diodenlaseranordnung und DWM-Modul mit einer solchen Diodenlaseranordnung

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6484779A (en) * 1987-09-28 1989-03-30 Nec Corp Semiconductor laser and manufacture thereof
JPH02281781A (ja) * 1989-04-24 1990-11-19 Matsushita Electric Ind Co Ltd 半導体レーザアレイ装置
JPH02281783A (ja) * 1989-04-24 1990-11-19 Matsushita Electric Ind Co Ltd 半導体レーザアレイ装置
US5105430A (en) * 1991-04-09 1992-04-14 The United States Of America As Represented By The United States Department Of Energy Thin planar package for cooling an array of edge-emitting laser diodes
JPH04314375A (ja) * 1991-04-12 1992-11-05 Sony Corp 半導体レーザ装置
DE4315580A1 (de) * 1993-05-11 1994-11-17 Fraunhofer Ges Forschung Anordnung aus Laserdioden und einem Kühlsystem sowie Verfahren zu deren Herstellung
JPH08116138A (ja) * 1994-10-17 1996-05-07 Mitsubishi Heavy Ind Ltd 半導体レーザ素子の冷却装置
DE19536463C2 (de) * 1995-09-29 2002-02-07 Infineon Technologies Ag Verfahren zum Herstellen einer Mehrzahl von Laserdiodenbauelementen
JPH09181376A (ja) * 1995-12-26 1997-07-11 Mitsubishi Heavy Ind Ltd 固体レーザ励起用半導体レーザ及びその製造方法
JPH09223845A (ja) * 1996-02-15 1997-08-26 Nec Corp 光モジュール用液体冷却装置

Also Published As

Publication number Publication date
EP0973237A1 (en) 2000-01-19
CA2285390A1 (en) 1999-08-05
EP0973237A4 (en) 2001-04-25
WO1999039412A1 (fr) 1999-08-05

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Legal Events

Date Code Title Description
GD4K Issue of patent certificate for granted utility model filed before june 30, 2004