TW434852B - A plastic package having an air cavity and manufacturing method thereof - Google Patents
A plastic package having an air cavity and manufacturing method thereof Download PDFInfo
- Publication number
- TW434852B TW434852B TW088119120A TW88119120A TW434852B TW 434852 B TW434852 B TW 434852B TW 088119120 A TW088119120 A TW 088119120A TW 88119120 A TW88119120 A TW 88119120A TW 434852 B TW434852 B TW 434852B
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- Prior art keywords
- lead frame
- wire
- pad body
- lead
- pad
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01005—Boron [B]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01006—Carbon [C]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01023—Vanadium [V]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3025—Electromagnetic shielding
Landscapes
- Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)
Abstract
Description
434862 ...-·_ ·-- 五、發明說明(1) 發明背厅、 1.發明領域 本發明 裝,以及用 特別縮小及 一般, 片,該半導 部衝擊,磁 内部環境, 具有空氣腔 材料與半導 有空氣腔的 具有空氣腔 側,而與陶 將會破壞之 封裝依序個 注意,此為 陶瓷封裝相 造。 之發明領 於製造該 降低雜訊 半導體封 體封裝的 場等。而 使得其可 的封裝中 體晶片...„的 封裝可相 的共用封 瓷或塑膠 處。使用 別執行, 降低這些 當昂責, 域係有關 塑膠封裝 。也可以 裝覆蓋應 功能為保 且,半導 在最佳的 ’在封裝 活.化表面 當良好地 裝中,數 材料無關 附著劑或 而且需要 封裝之生 而難於使 於一具有 的方法。 改進輻射 用線結合 護半導體 體封裝保 環境下執 内部形成 、泣右任..柯 保護半導 層附著介 ,此介面 焊接焊密 特殊的技 產量的主 用半導體 空氣腔的塑 本發明的優 熱及生產量 連接到導線 晶片 護一 行其 空氣 直接 體晶 面曝 為在 封空 術, 要原 組裝 的電路 半導體 基本功 腔,使 接觸。 片的功 露至封 不良下 氣腔將 且小心 因。尤 元件或 膠封 點為可 〇 架的晶 避免外 晶片的 能。在 得封裝 該種具 能。在 裝外 ,氣緊 對於各 地加以 其是, 設備製 2.相關技術說明 圖17中顯示一具有額外蓋子之使用鑄模方法製造的具 有Γ ΐ氣腔的傳、紙封$的例+。一空氣腔503形成於當載 入、,體曰日片1 ~ 5 0〇,且一塑膠板1 _ 5 0 1面對線結合導434862 ...- · _ ·-V. Description of the invention (1) Invention back room, 1. Field of the invention The present invention is equipped with a special reduction and general, sheet, the semiconductor impact, magnetic internal environment, with air The cavity material and the semiconducting air cavity side have the air cavity side, and the packaging that will be destroyed by the ceramics will pay attention to this in order. This is made of ceramic packaging. The invention is in the field of manufacturing the noise reduction semiconductor package. The package that makes it possible to package the body chip can be shared with the sealing ceramic or plastic. Use other implementations to reduce these responsibilities. The system is related to plastic packaging. It can also be installed to protect the function. The semiconductor is best in the package. The surface should be installed in a good way. The number of materials has nothing to do with the adhesive or the need for packaging. It is difficult to use a method. Improve the radiation and wire bonding to protect the semiconductor package. Under the environment, the internal formation, the right one. Ke protects the semiconducting layer adhesion medium. This interface is welded and welded. The main semiconductor air cavity of the special technology is produced. The excellent heat and throughput of the present invention are connected to the wire chip guard. The direct air crystal surface of the air is exposed to the air-closing technique, which requires the basic circuit cavity of the assembled semiconductor to be contacted. The work of the film to the air cavity under the seal will be careful and cautious. In particular, the component or glue sealing point can be 0 frames. The crystal can avoid the energy of the external chip. It is necessary to encapsulate this kind of energy. In the package, the air tightness is suitable for each place, the device is made 2. Related technical description Figure 17 shows an example of a pass and paper seal with a Γ ΐ air cavity manufactured by a casting method with an additional lid. An air cavity 503 is formed when the load is on, and the sun-dial 1 ~ 500, and A plastic board 1 _ 5 0 1
434852 . I五、發明說明(2) !線架的後方 I 架的上側之 子 1 - 5 0 2 * 的半導體封 !導線架的塑 j但是,在該 | |膠,如果使 ; 化,而且改 腔之氣緊密 氧樹脂鑄模 丨低溫下進行 :此此不在乾 產品的哥命 i缺點為將使 :可以為從封 !上。在類型 :露出墊體的 j 丨波遮蔽功能 由不同 I 子,該方法 ! 體。此技術 導體晶片的 瓷基體製造 此陶瓷封裝 ,及在塑膠蓋子1〜50 2安全使地附著到導線 後,附著在導線架兩侧的塑膠板! _ 5 〇丨及蓋 【化,且應用超音波進行附著作業。在此類似 裝中,在應用環氡樹脂 膠蓋子外部’應用額外 形成一空氣腔的技術中 用在高溫度(通常約280 變其形狀。因此’此材 封的機構,且需要依賴 化合物。使用超音波炫 ’使得在空氣腔内的空 燥狀態,此與尚溫下的 具有相當不良的影響。 得其結構縮小,該導線 敦‘側邊中心的喷嘴延伸 的封裝中,熱傳導功能 封裝。而且,其不為一 的結構,考量該封裝具 的方法製造傳統具有塑 令使用高頻半導體元件 兩於製造一空氣腔封裝 動作表面接觸,以保護 的塑膠封裝中,半導體 的一例子顯示在圖1 8中 鑄模化合物,而密対到 的蓋子進行鑄模作業。 使用的塑膠為熱塑形塑 )時,塑膠開始融 料無法成為可維持空氣 蓋住塑膠蓋子外側之環 _化.撤著的密封短序係..在 氣具有許多的,溼氣,因 密封不同,而且此對於 此類型之半導體封裝之 需要捲繞成使得該導線 導線,而安裝在一板 下降’而不可能製造曝 可在封裝内側執行電磁 有一金屬蓋子。 膠封裝之塑膠封装的例 ,尤其是砷化鎵半導 ,其中封裝材料不與半 f性能。在此一般由陶 晶月結合内部的空氣。 2 43485 I ^-------〜——.. j 务明說明(3) ---------------------—........— '電路形態2 - 2a印在—, 屬粉束的導電墨,形;;水晶板2 一 2中 上焊接一導線2 - 1氣腔2 一1 墊體印在陶瓷板2 _ 金屬板2 一 4 1 。然後,在組敦—生的電路圖樣上 〜〜吼砂洛.月 -3於基體2、^ .導體的程序中’在線結合半導 4後’經由覆蓋 -1 ’其中應用包含金 °在焊接墊體2 - 5 在印刷時,該焊接 ’之後完成該基體2 曰曰片2~3於基體- 〇的金屬板2 ,〜社田復盍一 於邊陶曼封裝吸收溼素 r沾.吝斗泰从 1 子2 — 7,保護該半導=呵金屬板 或者是半馨體崩潰,體/曰片。由 a衣汉怃搜】 題。但是’陶瓷封袈丄“封裝有可能產生電路腐敍上的 材料,而且由於在^ 1㊣昂責,考量該封裝使用高品質 很難在應用飾鋼附著j程序中的困難度及特殊性。另外 線。而且在個別的片緩2 - 6後,規則地排列該導 此,陶变.封复,的生 中產生最後的.封裝基體2 一 1 〇。 塑膠封裝需要的程戽f氣的.塑暴·封...I的.1產,其中對於 導線架而進行該以集塊方式經由連接多個導IS =,而且也附著在各片$如果,多個墊體沒有準確地.排 線結合於墊體的封=線架上,則在半導體晶片結合 此將減少生產量。王序中’將影響到封裝的程序,且 最近,使用具於 作為減少成本J空氣腔的塑膠封裝以取 封裝令,:體2。圖19中顯示-塑膠封裝 ,結〗合於金屬板2體;“2。為導線2 的型式,此導 相者夫3與在其間的絕緣屉?邊緣,在此將結合的半導體晶 田,且厚度足以李5 ^ 、1 0重疊。最好金屬板2 -; —-……—、 田射熱量,且需要—導線2 ~ i 6以 4 3 4 8 5 2 五、發明說明(4) —-.....—— ----—--------------. 寬廣的區域’因此可顯示一低雜訊元件。為* ί腔厚产2 :將T附著劑2 - 12作用在-絕緣層的兩側ί434852. I. V. Description of the invention (2)! The rear side of the wire frame I is the semiconductor seal of the upper side of the frame 1-5 0 2 *! The plastic of the lead frame, however, if the | Cavity gas tight oxygen resin mold 丨 low temperature: This is not the brother of the dry product. The disadvantage is that it can be: can be from the seal! In the type: j 丨 wave shielding function of the exposed body is made of different I, this method! This technology is made of a ceramic substrate of a conductor wafer. This ceramic package is attached to the plastic plates on both sides of the lead frame after the plastic cover 1 ~ 50 2 is safely attached to the wire! _ 5 〇 丨 and cover [transformation, and the use of ultrasonic waves for the supplementary work. In this similar device, the application of the technique of forming an air cavity outside the cover of the epoxy resin cover is used at a high temperature (usually about 280 to change its shape. Therefore, the mechanism of this material is sealed, and it depends on the compound. Use Ultrasonic dazzling makes the air cavity in a dry state, which has a very bad effect compared with the high temperature. Due to its structure shrinking, the lead wire has a nozzle extending in the center of the side center, and a heat conduction function package. And Considering the non-uniform structure, considering the method of manufacturing the package, the traditional method of manufacturing a plastic package using high-frequency semiconductor components and manufacturing an air-cavity package in contact with the surface to protect the plastic package is shown in Figure 1. 8 mold compound, and the tightly closed cover is used for molding operation. When the plastic used is thermoplastic shape, the plastic begins to melt and cannot become a ring that can maintain air to cover the outer side of the plastic cover. Sequence system: There is a lot of moisture in the gas, due to different sealing, and the need for this type of semiconductor package is wound so that Wires Wires, while mounted on a board, are lowered 'without the possibility of manufacturing exposure. Electromagnetics can be performed on the inside of the package with a metal lid. Examples of plastic packaging of plastic packages, especially gallium arsenide semiconductors, in which the packaging material does not match the semi-f performance. In this case, Tao Jingyue combined the internal air. 2 43485 I ^ ------- ~ —— .. j business instructions (3) -----------------------..... ... — 'Circuit form 2-2a printed on —, is a conductive ink of powder bunch, shape ;; crystal plate 2-2 welded a wire 2-1 air cavity 2-1 cushion body printed on ceramic plate 2 _ Metal plates 2 to 4 1. Then, on the group circuit diagram of the raw circuit ~~ sarsalok. Month-3 on the substrate 2, ^. Conductor in the program 'online bonding semiconductor 4' via the cover -1 'where the application contains gold ° soldering Pad 2-5 In printing, the welding is completed after the base 2 is said to be sheet 2 ~ 3 on the metal plate 2 of the base-0, ~ Sheda Fuyi one in the edge of Taoman package absorbs moisture r stain. 吝Dou Tai protects the semiconductor from 1 to 2-7. The metal plate or half of the body collapses, and the body / sheet is broken. Search by a Yi Han 怃]. However, the 'ceramic seal' package may produce circuit corrosion materials, and due to the high responsibility, considering the difficulty and specificity of the package using high quality, it is difficult to apply in the application of decorative steel. In addition, after the individual pieces are slowed 2-6, the guides are arranged regularly, and the ceramics are sealed and sealed to produce the final package base 2-10. The process of plastic packaging is required. .Plastic storm sealing ... I.1 production, in which the lead frame is connected in a block manner via a plurality of conductors IS =, and also attached to each piece if the multiple pads are not accurately. The wiring is combined with the sealing of the pad body = the wire frame, and the combination of the semiconductor wafer will reduce the production volume. Wang Xuzhong 'will affect the packaging process, and recently, a plastic package with a J air cavity to reduce costs is used to obtain Encapsulation order :: Body 2. Shown in Figure 19-plastic package, knotted to the metal plate 2 body; "2. Is the type of wire 2, the phase leader 3 and the insulation drawer in between? Edge, the semiconductor crystal field to be bonded here, and is thick enough to overlap 5 ^ and 10. The best metal plate 2-; —- …… —, field radiation heat, and need-wire 2 ~ i 6 to 4 3 4 8 5 2 V. Description of the invention (4) —-.....——- -----------------. A wide area 'so a low-noise component can be displayed. For * ί Cavity Thick Production 2: Apply T Adhesive 2-12 on both sides of the insulation layer ί
某一厚度為止。此類型的塑膠封骏 吸收溼 J 當低,而且生產量也低。為了克服這些缺點,相 π,在塑膠封裝中使用一基體2 _ 30,其中由 I二環氧榭脂铸.標化合物2 - 25。但是’,、使用上二= 基30的封裝卻使用在縮小封裝之MMIC( 的大量生產中f其需要封裝體的大小小么早J積 且置測4於或大於〇.lmm,使得在材料本身沒有任何 的排列方式’且在準確配置各分開的材料上相當困難不 :加以耦合也相當困難。而1,應用小面積的 承觉...固吸收渥氣的電阻測.鲜狀.態’此需要半導體封带属 有.著性的特殊體型式之環氡樹脂作為附著劑二 例子中,可改進防潮問題,但是在使用時存在某些=的 由環氧樹脂鑄模化合物以作為額外的蓋子時了报難制 &此材料成為一具有有限尺寸的封裝。 、衣 圖21中顯示比傳統技術上之塑膠封裝還要改 :二 中’由應用在導線架上環氧樹脂鑄模化合 j模入一例子(可形成空氣腔),將—絕緣板2〜3丨社人 導線架。此技術可偏移上述習知技術中 0 問題,而且改進其他技術上的而且, 趑f /Jj的 著侧數由2減為!,而改進防潮問題十由將附者劑之附 此方式無法完全改進在使用附著劑2 是, 題。使"殊液…的環氧樹脂,』問 ,、再有非常強的附 五 '發明說明(5) 一—— ..................— . j生’以防止硬化環氧樹脂鑄模化合物及一金屬 31。但是,為了防止當使用附著劑時,附著劑從 2 - 3 6散開,該附著劑使用高黏滯性,而且附著 必需準確地控制。因此,需要由於自動精確排放 ! 2體2 - 40變得較小時,报難達到足夠的排 果附著劑的排放量散佈2 - 36内側的全屈姑9 著劑與接地結合件2 _ 35於線結合程=2導 -=上相接觸,此結合件具有金屬板2 _ Μ,而 地其他的元件比較下,職需要 結二自度。而且,也可以 者浏的排放量少,而且如果附 = 的話’則可維持防渔能力。在密=7放5^寬 含一導線部位),且應用-蓋子覆蓋4 3 ’2 _大 後,需要接受1度循環測試/盍3的塑瑪 狀,的_倍。成為通過乾總量測軍用 等於或大於12: I況之/理’附著劑的帶心 由於附著劑使用Θ 且於在製造封骏墊體的3 在完全封裝處理之後, 合=所產生的破壞多 漏洩測試缺陷多 ,屬板的附著部位, 品必需測試總茂漏:, 點產品的危險,而 發明概述 板2 -一空氣腔 劑的數量 器。當封 放量。如 31,該附 體晶片2 非導線2 更多的接 疋在晶片 。如果附 度相當窄 小(不包 t封裝 標準883D 溫度循環 需維持隨 Ϊ序中, 於1 0 %, 發現乾總 !·有可靠 且所有成 五、發明說明(6) 本發明的目的係克服及解決上述說明之習知技術的缺 ,點,及達到下列目的。 首先,本發明提供一種空氣腔塑式的塑膠封裝’及用 於製造該塑膠封裝的方法,其中有可能在低融點,低功....率 抵—措’低.雜-訊及高.熱輻射下製造該塑膠封裝,而且其中由 塑膠鑄模方法及縮小化而程序無導線的形成,因此形成— 空氣腔。其次’本發明提供一種空氣腔型式的塑膠封裝, 及製造該塑膠封裝的方法,其中可由於處理程序簡化,而 製造成本減少,且可大大地改進生產過程。最後,本發明 提供一種空氣腔型式的塑膠封裝,及用於製造該塑膠封裝 的方法’其t可大大改進防潮及氣緊度。 圖式之簡單說明 圖^為依據本發明第—較佳實施例之應用在半導體封 裝上的第一及苐一導線架的三維視圖。 圖2a到圖2h為處理歩驟的矣+ 土 -明筮一 t杜在# η认化 表不法,其中顯示依據本發 明弟一較佳@施例的製造方法。 圖3 三維視圖顯示依攄太表 窠一遙蝻加卜氺# μ 依據本發明第—較佳實施例之在 第V線木上形成的—空氣腔的基體及—側 。 圖4為一重要部位的戴面視圖,其中:·曰 結合及線結合時在第二導線架上負載、?二執二片 -金屬蓋子蓋住圖3a之第一導線架。 導線&而且 圖5之三維視圖顯示當埶杆曰 一第一導飧加P八鬥认日日片結合及線結合時’從 第—線架上分開的單元,而且,在圖g^ s 蓋子。 在圖3a中附著一金屬Up to a certain thickness. This type of plastic sealer has low absorption of wet J and low production. In order to overcome these shortcomings, phase π, a substrate 2_30 is used in the plastic package, in which the standard compound 2-25 is cast from I di epoxy resin. However, the use of the upper two = base 30 package is used in the MMIC of the reduced package (the mass production of the package is small, what is the size of the package and the measurement is 4 or greater than 0.1mm, so that in the material There is no permutation method itself, and it is quite difficult to accurately configure the separate materials. It is also very difficult to couple it. And 1, the application of a small area of perception ... resistance measurement of solid absorption of fresh gas. Fresh state. 'This requires a special type of semiconductor sealing tape to be used as an adhesive. In the second example, it can improve the problem of moisture resistance, but there are some = molding compounds made of epoxy resin as additional when used. The cover is difficult to make & this material becomes a package with a limited size. Figure 21 shows that the package is more modified than the traditional plastic package: the second middle is made of epoxy resin molded on the lead frame. Molding into an example (which can form an air cavity), the insulation board 2 ~ 3 丨 the company's lead frame. This technology can offset the 0 problem in the conventional technology described above, and improve other technical and, , f / Jj's Number of landings reduced from 2 to The problem of improving the moisture resistance problem is that the method of attaching the attaching agent cannot completely improve the use of the attaching agent 2. The problem is to make the "epoxy resin of special liquid ..." "Anyway, there is a very strong additional five ' Description of the Invention (5) A — ........ —. J 'to prevent hardening of the epoxy mold compound and a metal 31. However, in order to prevent When attaching the adhesive, the adhesive spreads out from 2-3, 6. The adhesive uses high viscosity, and the adhesion must be accurately controlled. Therefore, it needs to be automatically and precisely discharged! When the 2 body 2-40 becomes smaller, it is difficult. To achieve a sufficient discharge of the fruit discharge adhesive spread 2-36 inside the total Quku 9 agent and the ground connection 2 _ 35 in line bonding process = 2 guide-= upper contact, this combination has a metal plate 2 _ Μ, compared with other components of the ground, the job requires two degrees of self-reliance. Moreover, you can also reduce the amount of emissions, and if attached = ', you can maintain the anti-fishing ability. In the dense = 7 put 5 ^ wide One lead part), and the application-cover covers 4 3 '2 _ big, need to undergo 1 degree cycle test / 盍 3 plastic shape, _ timesBecome a military equivalent to or greater than 12: 1 by the dry mass measurement. The core of the adhesive is due to the use of Θ for the adhesive and 3 in the manufacture of the seal pad. The multi-leakage test has many defects and belongs to the attachment part of the board. The product must be tested for total leakage :, point the danger of the product, and the invention outlines the board 2-an air cavity meter. When closed. If 31, the attached chip 2 and non-conductor 2 are more connected to the chip. If the degree of attachment is quite narrow (not including the standard package 883D temperature cycle needs to be maintained in the sequence, at 10%, it is found to be dry! • Reliable and all-inclusive. 5. Description of the invention (6) The purpose of the present invention is to overcome And to solve the shortcomings and points of the conventional technology described above, and achieve the following objectives: First, the present invention provides an air cavity plastic type plastic package 'and a method for manufacturing the plastic package, which may be at a low melting point, Low power .... Rate resistance-measures' low. Noise-signal and high. The plastic package is manufactured under thermal radiation, and in which the plastic mold method and downsizing are performed without the formation of wires, so an air cavity is formed. Next 'The present invention provides an air cavity type plastic package and a method for manufacturing the same, wherein the manufacturing process can be reduced due to simplified processing procedures, and the production process can be greatly improved. Finally, the present invention provides an air cavity type Plastic package, and method for manufacturing the plastic package, its t can greatly improve moisture resistance and air tightness. The simple illustration of the figure is the first preferred implementation according to the present invention. Three-dimensional views of the first and first lead frames applied to a semiconductor package. Figures 2a to 2h show the processing steps of 矣 + 土-明 筮 一 t 杜杜 # η in the table, which shows according to the present invention The method of making a better one @ 施 例. Figure 3 The three-dimensional view shows the air cavity formed by the V-line wood according to the first preferred embodiment of the present invention. Figure 4 is a wearing surface view of an important part, in which: ·········································································· • ·········································· The wire & and the three-dimensional view of FIG. 5 shows the unit separated from the first wire rack when the pole is connected to the first guide plus P eight buckets and the Japanese film and the wire are combined, and, in FIG. ^ s lid. Attaching a metal in Figure 3a
434852 五、發明說明⑺ ...................._ +—+… 一^—------------ 圖6之示意圖颟+六、由,,% & μ 單元,及在第_導蝻1連,·〇後的“模情況下圖5中所示的 早兀及隹弟一導線架的虛切割線。 圖7之部位截面圖顯千产阁β夕+ 裝。 圓顯不伙圖6之切割所示的單元塑膠封 封裝圖示由罐裝-液態的環氧樹脂,而形成-圖9之三維視圖係依據本發明 用在封裝基體的導線架。 敉佳貫施例^ 圖10a之示意圖顱+ —够_ ±J_,丄〜 上製作的第一鑄模。弟一較佳實施例之第一導線架 圖l〇b為圖l〇a之底部視圖。 圖1 I之二維視圖_圓1 Π j· —導線。 間·貝不攸圖10a切割之第一導線架的第 圖1 2的三維視圖,gs -〆固,、 -^ ,4 ^ -ΤΓ , ^ ,·項不虽圖11的第一導線架附著到第 一導線木下4除之第—導線架的侧邊執。 圖1 3之二維視圖顯示圖1 2之側邊壁。 圖1 4之三維視圖翻榇 在第二導線架的封裂之::據本發明之第二較佳實施例, 封裝圖1 5的三維視圖顯示第二較佳實施例之基體所作用之 圖16為圖15的截面視圖。 圖1 7之截面視圖,Ss -庙& ^ 製,此塑朦封裝應另42:!上使用^空氣腔塑膠封 額外的盍子視圖鑄模。 圖18到圖21之截面視圖顯示依據上使用的空氣腔半導 b 434 五、發明說明(8) 體傳統封裝 圖號說明 1 - - 100 第 導 線 架 1 - - 101 空 氣 腔 1 - -102 支 撐 桿 1 - -115 桿 體 1 - -116 側 邊 軌 1 - -110 第 一 墊 體 1 - -120 第 一 導 線 架 1 - ^ 130 側 邊 壁 1 - -131 穿 越 洞 Ό 1 - -1.32 基 礎 側 邊 1 - -140 半 導 體 晶 片 1 - -150 金 屬 蓋 子 1 - -16 0 第 — 單 元 1 - -200 第 二 導 線 架 1 - -400 環 氧 樹 脂 1 - -500 塑 合 膜 2 - -130 第 — 鑄 模 體 2 -210 第 二 塾 體 2 - -220 第 -— 導 線 2 - ,300 空 氣 腔 較佳實施例之詳細說明434852 V. Description of the invention .................. + + + ... One ^ ------------- Schematic diagram of Figure 6颟 + 六, ,,% & μ unit, and the virtual cutting line of the early lead and the lead lead frame shown in Fig. 5 in the case of the "mode" after the 1st lead -1, "0". Figure The cross-sectional view of part 7 shows the production hall β evening + equipment. The circle shows the unit plastic seal package shown in the cut of FIG. 6 is formed from canned-liquid epoxy resin, and formed into a three-dimensional view system of FIG. 9 The lead frame used in the package substrate according to the present invention. 敉 佳 贯 实施 例 ^ Figure 10a Schematic diagram of the skull +-enough _ ± J_, 丄 ~ The first mold made on the preferred embodiment of the first lead frame l0b is a bottom view of FIG. 10a. FIG. 1 is a two-dimensional view of circle _circle 1 Π j · —conductor. gs-〆 固 ,,-^, 4 ^ -ΤΓ, ^, · items are not the first lead frame of Fig. 11 is attached to the first lead under the wood 4 except for the side of the lead frame. Figure 1 3bis The dimensional view shows the side wall of Fig. 12. The 3D view of Fig. 14 is flipped over the second lead frame. Sealing: According to the second preferred embodiment of the present invention, the three-dimensional view of FIG. 15 showing the role of the substrate of the second preferred embodiment is shown in FIG. 16 as a sectional view of FIG. 15. FIG. 17 is a sectional view , Ss-miao & ^ system, this plastic package should be another 42 :! using ^ air cavity plastic seal additional rafter view mold. The cross-sectional views of Figure 18 to Figure 21 show the air cavity semiconducting b 434 V. Description of the invention (8) Body traditional package drawing number description 1--100 Lead frame 1--101 Air cavity 1--102 Support rod 1--115 Rod body 1--116 Side rail 1--110 First pad body 1--120 First lead frame 1-^ 130 Side wall 1--131 Through hole 1--1.32 Base side 1--140 Semiconductor wafer 1--150 Metal cover 1--16 0 Section — Unit 1--200 Second Lead Frame 1--400 Epoxy Resin 1--500 Plastic Laminated Film 2--130 Section-Mould Body 2 -210 Section 2--220 Section--Wire 2- Detailed description of the preferred embodiment of the 300 air cavity
第12頁 具 有 — 墊 體 其 中 5 與 所 形 成 9 第 ~ 墊 體 電 膠 的 基 級 型 式 之 體 縳 楔 型 祠 D > 金 屬 蓋 架 且 附 連 接 第 縳楔型十端之區域,一側 口,3到第-導線架之上側的區域 金屬蓋:電膠’此導電膠充填在產生 ’且附荽1此金屬蓋子經該導電膠而 434852 i五、發明說明(9) ^......................———------------------------ 有本發明之空氣腔的塑 其中與塾Γ結合-半導片 所形成,形成J:二G:第-導線係由 第~塾_ ί Ϊ 各導線,其位 電膠的義ί向,—基體鑄模型式, 級型式之筻,其方式為鑄模—段從第 單元包二,及苐二導線,作為鑄指 及〜環氣二各與第一導線架分開的第-邊,在::脂,此環氧樹脂鑄模在第二 〜種墊體及第—單元的第-等 據本發明於製造塑膠封裝的方法,驾 導線架,Α <氣腔,其特徵為包含下歹, 的方式置二令面對ί個第—墊體的各筹 步級型式之f 一較兩之位置,在從各第 而形成〜办f一導線的—端的區域中肩 到第〜塾二氣腔的底部及—側邊壁面。 綠,經由將1的ί墊體,該半導體晶片 腔,* X ’金屬蓋子附著刭你丨^一·—— 徵為包含多個第 一第一導線架, 依序配置的方式 置比似階級形@ 體鑄模形成一導 體的各邊緣到步 壁,其中在從基 中形成多個穿越 各穿越洞口内, 連接該第一導線 架’此導線架電 第一單元,此第 體及第一導線, 線架的上側及側 互相連接。 曝封裝具有—依 驟:形成一第— 導線以似階梯形 墊體的邊緣處到 一環氣樹脂鑄模 合一半導體晶片 結合該第—導 第二導 墊體 434852 五、發明説明α〇) —〜 '—^ 一一. 而分開第一單元與第一導線架,使 、 各側邊壁向外突伸出來,將分開之第——導線的 第一導線電性連接第二導線架,其令=早元的第 二導線及第二墊體依序配置其位置 > 皆第導 鑄模環氧樹脂,其中各第一單元相第一導綠 上方及第二導線架的第二導線曝露 ,使得第 樹脂及第二導線架成為包含各第一側’且切 述的接地步驟中,在從側邊壁的上部:=多個單 所形成的區域中,於鑄模時,形成—抽側邊壁 膠充填該充填該穿越洞口,使得支撐^ , 墊體之支撐桿電性連接該金屬蓋子導線 步驟中’連接到第一導後 ,在遠 货守跟以任相當短的距雛允 第一導線,使得在環氧掛脂鑄模後,切 的切割端曝露到環氧樹脂的該侧。 ’ ^ 特^ ^具有依據本發明的空氣腔的塑膠封裳的 ^倣為包含結合一半導體晶另的第一墊體,第一 面^第一墊體之第—導線架的前邊緣部位定 —巧體還要高的位置,其間形成似階梯之型式, 導線,此第一導線線結合位在前邊表面上的半 —,一第二導線架,此導線架具有一第二墊體及 塾體的第一導線,且其中墊體及第二導線係位 表面上,一第一鑄模體,此鑄模體應用熱定型 $,使得第一導線的前邊表面曝露在該第一墊體 ~導線的步級區域中’及一側邊壁,此側邊壁 一部份從 一墊體與 線架的第 架的上方 二墊體的 割該環氧 元。在上 的下部位 且將導電 架的第一 突伸出來 ’相當該 第二導線 基體,其 導線架, 位在比第 此具有第 導體晶 面對各第 在相一平 材料鑄 的邊緣到 與第一鑄 434852 五、發明說明(π) 模體經由鑄模將熱定材料埋入該第一鑄模體之邊緣及下 I側,及該第一導線,而形成一空氣腔,使得第二導線的後 I端向外突伸出來。形成第二墊體,使其比第一墊體寬,以 ! !佔據該第一導線的前端部位。Page 12 has — cushion body 5 of which is formed with 9th ~ base body of the basic type of body glue wedge-shaped temple D > metal cover with attached to the tenth end of the wedge-shaped area, one side mouth , 3 to the upper side of the lead frame metal cover: electric glue 'this conductive glue is filled in the production' and attached 荽 1 this metal cover is passed through the conductive glue and 434852 i five, description of the invention (9) ^ .... ........————------------------------ With the air of the invention The cavity plastic is combined with 塾 Γ-formed by a semiconducting sheet to form J: two G: the-lead system consists of the ~~ _ ί Ϊ wires, the meaning of the electrical glue at its position,-the matrix casting model, grade Type 筻, its way is to mold-segment from the second unit package, and the second wire, as the casting fingers and ~ the second side of the ring air separate from the first lead frame, in :: grease, this epoxy resin According to the present invention, the method of manufacturing a plastic package, a lead frame, A < air cavity, which is characterized by including a chin, is placed in two orders. ί 第 — 垫 The first Each of f raised in steps of a pattern representing the positions of the two, is formed in the do ~ f a wire from each of the first - the end region of the shoulder and the bottom of the second gas chamber Sook ~ - side wall surface. Green, by attaching 1 of the pad body, the semiconductor wafer cavity, * X 'metal cover attached to you ^ ^ · · —— --- It is composed of a plurality of first and first lead frames, which are arranged in a sequential manner. The shape of the body is formed from each edge of the conductor to the step wall, in which a plurality of crossing holes are formed from the base, and the first lead frame is connected to the first lead frame, the first body, the first body, and the first lead. The upper side and the side of the wire frame are connected to each other. The exposed package has the following steps: forming a first conducting wire and combining a semiconductor wafer with a ring-shaped resin mold at the edge of the step-like cushion body to combine the first conducting lead body 434852 5. Invention description α〇) — ~ '— ^ One by one. Separate the first unit from the first lead frame so that the side walls protrude outward, and electrically connect the first lead of the separated first-conductor to the second lead frame. = Early Yuan's second wire and second pad are arranged in order.> Both are the first casting mold epoxy resin, where each first unit phase is above the first green and the second wire of the second lead frame is exposed, so that In the grounding step including the first side and the first resin and the second lead frame, in the region formed from the upper part of the side wall: = a plurality of sheets, the side wall is formed when the mold is drawn. The filler fills the through hole, so that the support ^, the support rod of the cushion body is electrically connected to the metal cover wire in the step of 'connecting to the first guide, and allowing the first wire to be relatively short in the far cargo guard. , So that after the epoxy hanging grease mold, cut End side is exposed to the epoxy resin. ^ 特 ^ ^ The plastic seal with the air cavity according to the present invention is simulated to include a first pad body combined with a semiconductor crystal, the first surface ^ the first pad body-the front edge of the lead frame is determined —The position is still higher, and a step-like pattern is formed in between. The lead, the first lead is combined with the half located on the front surface—, a second lead frame, the lead frame has a second cushion body and 塾The first lead of the body, and on the surface of the cushion body and the second lead system, a first mold body is applied, and the mold body is heat-set, so that the front surface of the first conductor is exposed on the first pad body ~ the conductor. In the step area and one side wall, the side wall partly cuts the epoxy element from a cushion body and two cushion bodies above the first frame of the wire frame. In the upper and lower parts, the first protrusion of the conductive frame protrudes, which corresponds to the second wire base. The lead frame is located at the edge of a flat material casted from the first conductor crystal surface to the first. A casting 434852 V. Description of the invention (π) The mold body embeds the heat-setting material into the edge and the lower side of the first mold body and the first wire through the mold to form an air cavity, so that the rear of the second wire The I end protrudes outward. Form the second pad body so that it is wider than the first pad body so as to occupy the front end portion of the first wire.
I 丨 一種用於製造具有依據本發明之空氣腔之塑膠封裝的I 丨 A method for manufacturing a plastic package having an air cavity according to the present invention
I I基體的方法,其特徵為包含下列步驟:形成一似階梯型式 的第一導線架,其中第一導線的前端以步級方式,而使其 高於該第一墊體,該墊體在兩側邊緣具有侧邊執,且由支 撐桿所支撐,而且其中結合一半導體晶片,應用熱定型材 料形成該第一鑄模體,使得第一導線的上前端從第一墊體 ;的邊緣向步級型式的第一導線突伸出來,切割該第二導 線,使得該第一導線從第一鑄模體向外曝露出某一段長 度,將切割第一導線的第一導線架附著到配置有第二墊體 及第一導線的第二導線架上,從附著該第二導線的該第一 導線架上去除側邊執,且應用熱定型材料鑄模,而形成一 侧邊壁,使得從第一鑄模體上突伸出來的第一導線被埋入 其内,且第二導線突伸出來某一段長度。在形成第一鑄模 體的步驟中,更進一步包含步驟為:形成一在第二導線架 及第一導線架之支撐桿下方之間維持一段距離的間隔。 |第一較佳實施例說明 jThe method of the II substrate is characterized by including the following steps: forming a stepped first lead frame, wherein the front end of the first lead is stepped so as to be higher than the first pad body, and the pad body The side edge has a side handle and is supported by a support rod, and a semiconductor wafer is incorporated therein, and the first mold body is formed by applying a heat setting material, so that the upper front end of the first wire is stepped from the edge of the first pad body; The first conductive wire of the type protrudes, and the second conductive wire is cut, so that the first conductive wire is exposed to a certain length from the first mold body, and the first lead frame that cuts the first conductive wire is attached to the second pad. On the second lead frame of the body and the first lead, the side edge is removed from the first lead frame to which the second lead is attached, and a heat setting material is used to form a side wall so that the side wall is formed from the first mold. The first wire protruding from above is buried therein, and the second wire protruding from a certain length. In the step of forming the first mold body, the method further includes the step of: forming a space for maintaining a distance between the second lead frame and the support rod of the first lead frame. | Description of the First Preferred Embodiment j
I I 在作用到本發明之第一導線架1 - 100中,存在一第 ;一墊體1 - 110,其中結合一半導體晶片,依序配置包含I I In the first lead frame 1-100 of the present invention, there is a first; a pad body 1-110, in which a semiconductor wafer is combined, and the sequential arrangement includes
第15頁 434852 :五'發明說明(12) :有第一導線1 - 1 20的多個單元,該導線係由與半導體晶 |片的線結合連接一外部终端,此配置係由側邊執1 - 116 及一段桿體1 - 115所達成,各第一導線架1 - 120直接連 丨接側邊轨1 - 116及圖1所示的段桿體1 - 11 5。如圖3a中 i所示者’第一墊體1 - 110連接支撐桿1 - 102。Page 15 434852: Five 'invention description (12): There are a plurality of units with a first wire 1-1 20, the wire is connected to an external terminal by combining with a semiconductor chip | wire, this configuration is performed by the side 1-116 and a section of the rod body 1-115, each first lead frame 1-120 is directly connected to the side rails 1-116 and the section of the rod body 1-11 5 shown in FIG. 1. As shown by i in Fig. 3a ', the first cushion body 1-110 is connected to the support rods 1-102.
I 1 形成一第二導線架1 - 200 ’此導線架大於第一墊體1I 1 forms a second lead frame 1-200 ′ This lead frame is larger than the first pad body 1
-Π〇 ’使得第二墊體重疊第一導線1 - 120的一端,且將 :第二墊體1 - 201及第二導線1 - 202配置在同一平面上。 首先’形成各個面對第一墊體的第一導線1 - 120,使其 在似階梯型式的位置高於第一導線架1 _ 1 〇 〇中的多個第 一墊體1 - 110,在該第一導線架中,依序配置多個結合 半導體晶片的第一墊體1 - 110,如圖1及2a中所示者。 然後’如圖2b ’ 3a及3b所示,應用環氧樹身經由缚模 一段從各個第一墊體1 - 1 1 0的邊緣到階梯型式之第—導 線1 - 1 2 0之各端的區域,而形成一空氣腔的基礎侧邊i :1 3 2及側壁1 - 1 3 0。視需要將第一導線1 - 1 2 0及第—導 線架1 - 110的第一墊體1 - 110的上方鑛上Ag,且在此狀 :態下,形成階梯型式的導線,且加以鑄模。在鑄模—為電 鍍部位之反側的下側時’在壓縮該鑄模的上及下板的情況 下,鎮模該下側,以防止下侧為樹脂晃動所污染。 : 半導體晶片1 - 140與各第一墊體1 - 相結合,且 i各半導體晶片1 ~ 140及各第一導線1 - 120與線1 ~ Mg 相結合,如圖2c中所示者。-Π〇 'so that the second pad body overlaps one end of the first lead wires 1-120 and the second pad body 1-201 and the second lead wires 1-202 are arranged on the same plane. First, 'form each first lead 1-120 facing the first pad body so that it is higher than a plurality of first pads 1-110 in the first lead frame 1 _ 100 in a step-like position, in In the first lead frame, a plurality of first pads 1-110 combined with a semiconductor wafer are sequentially arranged, as shown in FIGS. 1 and 2a. Then, as shown in FIG. 2b, 3a and 3b, the epoxy tree body is used to bind the area from the edge of each first pad 1-1 1 0 to the end of the stepped first wire-1 2 0 0 through the binding mold, A base side i: 1 2 2 and a side wall 1-1 3 0 forming an air cavity are formed. If necessary, the first lead 1-1 2 0 and the first lead frame 1-110 of the first lead frame 1-110 are pitted with Ag, and in this state: in a state, a step type lead is formed and molded. . When the mold is the lower side of the opposite side of the electroplated part 'When the upper and lower plates of the mold are compressed, the lower side of the mold is pressed to prevent the lower side from being contaminated by resin shaking. : The semiconductor wafer 1-140 is combined with each of the first pads 1-, and each semiconductor wafer 1-140 and each of the first wires 1-120 are combined with the wires 1 ~ Mg, as shown in FIG. 2c.
經由將金屬蓋子1 - 1 5 0附著在側邊壁1 - 1 3 〇的上By attaching the metal cover 1-1 50 to the side wall 1-1 3 〇
434852 五、發明說明(13) I端,且將金屬蓋子]-150及第一導線架】—Π〇及支撐桿 丨1 1 - 102接地,則形成一空氣腔1 — 101。在支撐桿上形成 | 一缺口 1 - 1 20a,以使得其可與該側邊軌1 _ 11 6或—段 |桿體1 - 1 1 5相分開,如圖2d中所示者。 | 在該接地步驟中,如圖3 a所示’在形成基礎侧邊1 _ 132及側邊壁1 - 130的程序中,在該側邊壁1 ~ 130的上 端到下端的區域内,形成一 f.愚野口丨-131 ’將該穿越 洞口 1 - 131充填導電膠1 - 135 ’且電性連接金屬蓋子i — 「 j - 150及第一導線架1 - 110的支撐桿1 - 120。將金屬蓋 i子1 ~ 1 5 0置於在某一溫度下的加熱環境中,在侧邊辟1 | 130的上方壓縮該金屬蓋子,且該金屬蓋子與充填入穿 !丨洞口1 — 的導電膠1 _ ^35相互連接。最好該導電勝工 i - 135使用具有強附著強的材料,以操作防止由於將在下 |列步驟中執行之加熱及加壓程序中金屬蓋子ii 5 〇掉落 下來。而且,在側邊壁1 - 130的上端及金屬蓋子i I之間維持一段未完全密封的間隙,以防止鑄模化合物流到 i空氣腔的内側,且防止在空氣腔内侧的加埶空氣用士 , | 切割一導線1使得第一導線1 - 120的一部份;^側·- I邊壁1 - 130向外突伸出來,如圖26中所示者 > 且如圖5所 示,將各個第一單元1 - ;! 60與第一導線架i i i 〇相分 } 開。 經由與第二導線架1〜200相當而包含第—墊 一 110的第一單元1 _ 160及與該第一導線架j „ 11〇相分開 的第一墊體]-120電性連接,其中該第二導線i _ 2〇2及434852 V. Description of the invention (13) I terminal, and the metal cover] -150 and the first lead frame] —Π〇 and the support rod 丨 1 1-102 are grounded to form an air cavity 1—101. A notch 1-1 20a is formed on the support rod so that it can be separated from the side rail 1 _ 11 6 or-section | rod 1-1 1 5 as shown in Figure 2d. In this grounding step, as shown in FIG. 3a, 'In the process of forming the foundation side 1_132 and the side wall 1-130, in the area from the upper end to the lower end of the side wall 1 ~ 130, form F. Yuyekou 丨 -131 'Fill the through-holes 1-131 with conductive glue 1-135' and electrically connect the metal cover i-"j-150 and the support rods 1-120 of the first lead frame 1-110. Place the metal cover 1 ~ 1 50 in a heating environment at a certain temperature, compress the metal cover above the side edge 1 | 130, and the metal cover and the filler are inserted through! 口 口 1 — 的Conductive glue 1 _ ^ 35 is connected to each other. It is best to use a material with strong adhesion for the conductive winner i-135 to prevent the metal cover ii 5 〇 due to the heating and pressurizing procedures performed in the following steps Also, maintain an incompletely sealed gap between the upper ends of the side walls 1-130 and the metal cover i I to prevent the molding compound from flowing to the inside of the air cavity of i, and to prevent a build-up on the inside of the air cavity. Air taxi, | Cut a wire 1 so that part of the first wire 1-120; ^ side ·-I side wall 1-130 protrudes outward, as shown in FIG. 26 > and as shown in FIG. 5, each first unit 1-;! 60 is separated from the first lead frame iii 〇. The two lead frames 1 to 200 are equivalent and include the first unit 1_160 of the first pad 110 and the first pad body separated from the first lead frame j „11 o] -120 electrically connected, wherein the second Lead i _ 2〇2 and
第17頁 434852 〜 — · ·— — _ __ 五、發明說明(14) —" ·———................ —— 面對第一導線架1 „ 11〇的第二墊體1 _ 2〇1以圖1及2{所 不的矩陣圖樣依序配置。該第一導線1 - 1 2 〇之對應處比 第二導線1 - 2〇2高,且連接如圖2f及7中所示者。在此一 =上,在第二塾體1 — 2〇1中央部分及第二導線1 ~ 202末 ,邊印上導電附著劑或焊料,且與在第二墊體及導線上的 第二墊體1 - n〇及第一導線】_ 12〇重疊’且經由加熱而 附著這些組件。 士在連接第一單元1 „ 16〇的第二導線架} _ 2〇〇之上方 每模一包形成封裝塑膠體的環氧樹脂1 - 400,但是,鑄 1玉個第曰二導線架1 _ 2 0 0,而不分開各第一單元丄_ 用蔣賴t第^遙線架的邊線及下製ί外唪露出來.、。當使 機,且使!、法時,在金屬鑄模内製造足量的空氣排氣 :一單元,仲久广的®力相當低,以防止空氣腔的底部及第 :為注入金屬铸二、在使用移轉鑄模方法的鑄模時, :所示者。將該第二:二樹脂的壓力所破壞,士口圖及6中 |接特性的材料。—線架1 — 20 0的下側鍍上具有良好焊 除了移轉鑄模方法 :罐声.法。在此方式中 ' 沾丄f形成外部體時,也可以使用 :1 _ 1 00被壓縮,且附著·’。5夕個半導體晶片的第一導線架 I剝除劑,且在安裝與第二在2/膜1 ~ 50 0中,其中使用— |塑膠閘後,將液體型式架1 ~ 200的邊界相符合的 I 6 0 0的高度,然後再加以长礼樹脂填入,至達到閘1 切割環氧樹脂i 更化,如圖8中所示者。 4〇〇及笛_Page 17 434852 ~ — · · — — _ __ V. Description of the invention (14) — " · ————...... —— Facing the first lead frame 1 „11〇 The second pad body 1 _ 2〇1 is arranged in the order of the matrix patterns in FIGS. 1 and 2 {. The corresponding position of the first lead 1-1 2 〇 is greater than the second lead 1-2 2 High, and the connection is as shown in Figure 2f and 7. On this one = on the center of the second carcass 1-201 and the end of the second wire 1 ~ 202, printed with conductive adhesive or solder, And overlap with the second pad body 1-n〇 and the first lead wire on the second pad body and the lead wire] _ 12〇 and attach these components by heating. The second part connected to the first unit 1 „16〇 Lead frame} _ 200 above each mold to form a package of epoxy resin 1-400 to encapsulate the plastic body, but cast 1 jade second lead frame 1 _ 2 0 0 without separating the first unit 丄_ Use Jiang Lai ’s ^ Remote Wire Frame's sideline and subordinate ί to reveal. When the machine is used, and when the method is used, a sufficient amount of air exhaust is made in the metal mold: one unit, Zhong Jiuguang's ® force is quite low to prevent the bottom of the air cavity and the first: for the injection of metal When using a mold of the transfer mold method, the following is shown. The pressure of the second: two resins is destroyed, and the material in the mouth pattern and 6 | —The lower side of the wire frame 1—200 has good welding. In addition to the transfer mold method: pot sound method. In this way, '丄 f can also be used to form an external body. It can be compressed and attached using 1 -1 00'. The first lead frame I stripping agent of the semiconductor wafer is installed and the second is in the 2 / film 1 ~ 50 0, where the plastic gate is used, and the boundary of the liquid type frame 1 ~ 200 is matched. The height of I 6 0 0 is then filled with Changli resin until the gate 1 is cut and the epoxy resin i is changed, as shown in FIG. 8. 4〇〇 和 笛 _
第18頁 —〜… 夂第-導線架1 - 20 0成為包含 4348S2 i五、發明說明(15) 各個第一墊體1 - 100的封裝單元。但是,第二導線架1 -2 0 0的第二導線1 - 202及支撐桿與環氧樹脂1 - 400 —起 I切割,使得這些組件曝露在相同的切割端上,如圖6及7中 :所示者。在第一導線架1 - 100及第二導線架1 - 200上並 丨沒有配置一閘桿,其可防止在鑄模時,由連接第一導線1 丨1 2 0及第二導線1 - 2 0 2之間時,兩外部導線之間環氧樹 月旨的内流。 在本發明的製造方法中,在抵住第一導線架的鑄模之 金屬鑄模上形成一突出部位(圖中沒有顯示),而非在第一 導線架的閘桿上形成此部位,使得在鑄模時,可防止導線 :之間環氧樹脂的内流。 丨第二較佳實施例說明 ’ 此將於下文中加以說明可應用經由之基體的塑膠封 丨裝,請參考附圖13,14及15。該具有本發明之基體的塑膠 i封裝包含一第一墊體2 - 110,其中結合1 - 半導體晶片2 -50,一第一導線架2 - 100,此導線架2 - 100的前邊緣 :面對第一墊體2 -110,且以階梯型式定位在比第一導線2 i - 120還要高的位置上,該第一導線線結合(2 - 60)到位 在第一邊緣2 - 120a之表面上的半導體晶月2 - 50上,一 |具有第二導線2 - 120上的第二導線架2 - 200,該第一墊 體2 - 110附著在該第二墊體上,以及一第二導線2 -2 2 0,其中第一導線2 - 1 2 0的後端附著到第二導線的前Page 18 — ~… 夂 The first-lead frame 1-20 0 becomes a package unit containing 4348S2 i. 5. Description of the invention (15) Each first pad body 1-100. However, the second wire 1-202 and the supporting rod of the second wire frame 1-200 are cut with the epoxy resin 1-400, so that these components are exposed on the same cutting end, as shown in Figs. 6 and 7 : Shown. The first lead frame 1-100 and the second lead frame 1-200 are not provided with a brake lever, which can prevent the first lead 1 丨 1 2 0 and the second lead 1-2 0 from being connected during the molding. When it is between 2, the internal flow of the epoxy resin between the two outer wires. In the manufacturing method of the present invention, a protruding portion (not shown) is formed on the metal mold of the mold against the first lead frame, instead of forming this portion on the brake lever of the first lead frame, so that the mold is formed on the mold. In this case, the inflow of epoxy resin between the wires: can be prevented.丨 Description of the second preferred embodiment ′ This will be described in the following. The plastic package that can be used for the substrate is described. Please refer to FIGS. 13, 14 and 15. The plastic i package with the substrate of the present invention includes a first pad body 2-110, in which a 1-semiconductor wafer 2-50 is combined, a first lead frame 2-100, and a front edge of the lead frame 2-100: surface The first pad body 2 -110 is positioned in a stepped manner at a position higher than the first lead 2 i-120, and the first lead wire combination (2-60) is positioned in the first edge 2-120a On the surface of the semiconductor wafer 2-50, a | has a second lead frame 2-200 on the second wire 2-120, the first pad body 2-110 is attached to the second pad body, and a first Two wires 2-2 2 0, wherein the rear end of the first wire 2-1 2 0 is attached to the front of the second wire
第19頁 434852 ..· ,__—*—一一· ·_ 五、發明說明(16) ..................... '〜〜〜〜 端,且第二導線的後端向外延伸一段比第一導線2〜 還要長的距離’且其中在相同的平面表面上,配置 20 體2 - 120及第二導線2 - 220,一第一鑄模體2 ~ 13〇—勢 應用熱定型材料鑄模此鑄模體’使得第一導線的前邊, 面2 - l〇2a曝露在從第一墊體2 - 110的邊緣到導綠2、‘〜表 1 20之階梯部位的區域上,一側邊壁2 _ 4〇〇,此側麻 第一鑄模體2 - 130 —起形成一空氣腔2 __ 3〇〇,其.與 方式為將熱定型材料鑄模,以將第一鑄模體2 _ 13 〃成之 側及邊緣及第一導線2 _ 12〇埋入’而使得第二導線、下 2 2 0的後方向外突伸出來,且在側邊壁2 _ 4〇〇 〜 一蓋子2 - 500。 工^壓縮 由抵住各導線架的支撐桿2 — 1〇1及2 _ 1〇1支 墊體2 - 11 0及第二導線架2 _ 21 〇,但是,與該側^ ^ 接,的一部份較窄,且較薄,使得甚至只要應用相當小目 力® ’該支樓桿即可從側邊轨2 _ 1 〇2及2 _ 1 3〇處掉落的 在禱模時不形成用於鎖住導線之間之鑄模化合物内淹^ 桿二形成比第一墊體2 _ i〗〇大的第二墊體2 _ 2丨〇,, 5亥第一墊體佔據第一導線2 - 1 2 0的前端部位。該第 線2 - 120係用於線結合之用,且該第二導線2 — 22〇作 如同一外部終端。結合該半導體晶片於該第一導線2〜 120-中,而且第二墊體2 _ 21〇在向外曝露時’其作用可〜 熱射板。作用如一外部終端的第二導線2 - 2 2 0從封裝 體之下端的邊緣延伸,該封裝形成導線的底部,且此型 允許其本身由本體數位,不會因此第二導線與本體之間= 2 五、發明說明(17) ' --------------——-------------------------------..- … 移動或掉落而產咮,力古„ 可擗加Μ裝π產生Z又有間隙。该封裝的第二導線2 — 220 敕2足e卩沾皆大小,該封裝係在安裝於板上時,可為可調 2良斑值寬度所接受。而且,有可能製造出一縮小的封 S定位二辟f的空氣腔.比赛J ’其面積可減少’其中該後 裝本體的下方時,此封裝安裝在板上。可將 且在α右ΐ二之封裝的導線2 _ 22 0之某些空間放大,而 -220 όή ^ .w , 40 0 —奴,而且可在不彎曲第二導線2 〇 的效庳、,\下達到在空氣腔的壁面上去除直接物理衝擊 隙。" 不會在傳統技術之導線介面處,產生一小的間 氣@之Γ文中加以說明依據本發明,用於製造具有空 乱腔之塑勝封裝基體的方法。 線2以1:梯Λ式形成第一導線架2〜100,其中將第-導 第一塾體 步級化,而使其高於結合半導體晶片的 弟墊體2 - 110,如圖13中所示者。 -導L用熱定型材料形成第一禱模體2 - 13〇,使得從第 導線2 Ό 上前方^ 12吒曝露到步級型式的第〆 、' 2 0 ’如圖1 4 a中所示者。 - m體2'130的步驟中,如圖⑽所示,形成 用ΐ 20 0時,該隔板用於維持—段距離。在應 是在該嬉握由:: 且不使用該閘桿 、中女農一島體,以防止鑄模封裝體的侧邊壁被Page 19, 434852 ...., __— * — one one · · _ V. Description of the invention (16) ................. '~~~~ End, and the rear end of the second wire extends a distance longer than the first wire 2 ~, and 20 bodies 2-120 and the second wire 2-220 are arranged on the same plane surface, a first A casting mold body 2 ~ 130. The mold body is made of a heat-setting material. This casting mold body is such that the front side of the first wire and the surface 2-10a are exposed from the edge of the first pad body 2-110 to the green guide 2, and Table 1 In the area of the stepped portion of 20, one side wall 2_400, and this side hemp first mold body 2-130 together forms an air cavity 2__300, and its method is to heat set Material mold to embed the side and edge of the first mold body 2 _ 13 and the first wire 2 _ 120 into the 'so that the rear of the second wire and the lower 2 2 0 protrude outward and on the side Side wall 2 _ 400 ~ One cover 2-500. The work is compressed by the supporting rods 2—101 and 2_1 against the lead frames 2—101 and the second lead frame 2—21, but it is connected to the side ^^. The part is narrow and thin, so that even with relatively small eyesight ® 'the tower pole can fall from the side rails 2 _ 1 〇 2 and 2 _ 1 3 30 does not form during the prayer mode The mold compound used to lock the wires is filled with the compound ^ The two rods form a second pad 2 _ 2 which is larger than the first pad 2 _ i, and the first pad 2 occupies the first wire 2 -1 2 0 at the front end. The second wire 2-120 is used for wire bonding, and the second wire 2-22 is used as the same external terminal. Combining the semiconductor wafer in the first wire 2 ~ 120-, and when the second pad body 2_210 is exposed to the outside, its function can be ~ heat radiation plate. The second wire 2-2 2 0 acting as an external terminal extends from the edge of the lower end of the package. The package forms the bottom of the wire, and this type allows itself to be digitized by the body. 2 V. Description of the invention (17) '--------------——------------------------- ------..-… move or drop to produce maggots. Ligu „can be installed with π to produce Z and have gaps. The second wire of this package 2 — 220 敕 2 feet e. When the package is mounted on a board, it can be accepted by the adjustable 2 good spot width. Moreover, it is possible to create a reduced air cavity of the seal S and position f. The competition J 'its area can be reduced' Wherein, the package is mounted on the board when the rear-loading body is below. It is possible to enlarge some space of the wire 2 _ 22 0 in the α-right second package, and -220 όή ^ .w, 40 0 — slave In addition, the direct physical impact gap can be removed on the wall of the air cavity without the effect of bending the second wire 2 0. " Will not generate a small gap at the wire interface of the traditional technology @ The basis for explanation The invention is a method for manufacturing a plastic package substrate with a hollow cavity. The wire 2 is formed into a first lead frame 2 to 100 in a 1: ladder type, wherein the first lead body is stepped to make it Higher than the bonding pad body 2-110 of the semiconductor wafer, as shown in Fig. 13.-The guide L forms the first prayer mold body 2-13 with a heat-setting material, so that the first lead 2 Ό is up front ^ 12 吒Exposed to the second step of the step pattern, '2 0' is shown in Figure 14a.-In the step of m body 2'130, as shown in Figure ,, when the use of ΐ200 is formed, the partition is used for In order to maintain a certain distance. In this should be played: by the use of the brake lever, the middle-aged woman and the island body to prevent the side walls of the mold package from being covered
第21頁 434852 五、發明說明(18) 破壞或產生裂缝。 切割一第一導線2 - 1 2 0,如圖1 5配置,該第一導線2 -120從第一鑄模體2 - 130向外曝露出來。由支撐桿2 -101,將第一墊體2 - 110及第一鑄模體2 - 130支撐在第 二導線架2 - 100中。 將形成第一鑄模體2 - 130的第一導線架2 - 100附著 到第二導線架2 - 2 0 0中,其中使用焊接油或導電附著 劑,配置面對第一墊體2 - 1 1 0及第一導線2 - 1 2 0的第二 墊體2 - 210及第二導線2 - 2 20,且如圖13及圖1 6中所示Page 21 434852 V. Description of the invention (18) Damage or crack. A first wire 2-1 2 0 is cut. As shown in Fig. 15, the first wire 2-120 is exposed from the first mold body 2-130. The first pad bodies 2-110 and the first mold bodies 2-130 are supported by the support rods 2-101 in the second lead frame 2-100. Attach the first lead frame 2-100 forming the first mold body 2-130 to the second lead frame 2-2 0 0, in which a soldering oil or a conductive adhesive is used to arrange to face the first pad body 2-1 1 0 and the first wire 2-1 2 0 of the second pad body 2-210 and the second wire 2-2 20, as shown in FIG. 13 and FIG. 16
第22頁 434852 五、發明說明(19) ——' ——— 一—... ——一一- 且當第二導線架2 ^ 200的整個下側曝露出時, 侧邊壁2 - 4 00。 』缉模涵 該半導體晶片2 _ 5 0結合到第一墊體2 _ u 〇及 體晶片2 - 50上,且第一導線2 _ 12〇在如圖15所示 述狀態下線結合到第一導線2 - 1 2 〇甲。 經由在側邊壁2 - 400的上方,壓縮一蓋子2 _ 5〇〇, 則可保護該空氣腔2 _ 3 00,且去除第二導線架2 _ 的 側邊轨’且各別切割操作2導線2 _ 22〇 ,。 ,附者蓋子2 - 500的步驟中,在蓋子2 _ 5〇〇上形成 排氣口 2 5 0 1,且在應用附著密封件將蓋子2 _ 二在側5= — 4〇°的上方後,如圖16中所示者,將排 ^ 口—填入熱定型材料。在此例子中,2 _ 5〇〇的排 氣口2 - 501可防止由於蓋子2 — 5〇〇等的附著位置之 所導致的缺陷。當用於附葚葚 移動 使得在空氣腔2 — 3用::二蓋力子^ ϊ 1 附著該蓋子則可能產生-項缺陷。在封裝 ^ Ί二凡全加熱時,執行排氣口的密封程序。 ' σ兒明的製造方法中,當在鑄植筐一德媒辦? 130之第一鑄模裎戽细門rs儿 苐一鑄模體2 - ..,舌序期間’硬化之裱氧樹脂鑄模化合物的 面模側邊壁2 ~ 400的例子中,兩鑄模化合 鍵处:丨且有可t於鑄模化合物本身的不同特徵而產生化學 .二一 ^此兩個介面將會剝離。為了克服此一問題, 浐德r:ΐ:實際結合的結構。尤其是,A 了使得環氧樹 曰鑄楔化σ物的介面不會曝露在最後組裝之封裝的外部,Page 22 434852 V. Description of the invention (19) —— '——— One —... — — One — and when the entire underside of the second lead frame 2 ^ 200 is exposed, the side walls 2-4 00. The semiconductor wafer 2 _ 50 is bonded to the first pad 2 _ u 〇 and the body wafer 2-50, and the first wire 2 _ 12 〇 is bonded to the first wire in the state shown in FIG. 15 Lead 2-1 2 0 A. By compressing a cover 2 _ 500 above the side walls 2-400, the air cavity 2 _ 3 00 can be protected, and the side rails of the second lead frame 2 _ can be removed and the respective cutting operations 2 Lead 2 _ 22〇 ,. In the step of attaching the cover 2-500, an exhaust port 2 5 0 1 is formed on the cover 2 _ 500, and after applying the attachment seal, the cover 2 _ 2 is above the side 5 = — 4 ° As shown in Figure 16, fill the drain port—fill in the heat setting material. In this example, the exhaust ports 2-501 of 2-500 can prevent defects due to the attachment positions of the lids 2-500 and the like. When used for attachment movement, it is used in the air cavity 2-3 to use :: two cover force ^ ϊ 1 Attaching the cover may cause-item defect. When the package is fully heated, the sealing process of the exhaust port is performed. 'σ Erming's manufacturing method, when a German media office in the casting basket? The first mold of 130, the thin door rs, the first mold body 2 -..., in the example of the side surface of the surface mold 2 ~ 400 of the hardened epoxy resin molding compound during the tongue sequence, the two molds are bonded at the joint:丨 There are different characteristics of the mold compound itself to produce chemistry. Two one ^ These two interfaces will be peeled off. To overcome this problem, 浐 r: 浐: the structure of actual combination. In particular, A prevents the interface of the epoxy tree from casting wedge σ from being exposed to the outside of the final assembled package.
第23頁 4343 五、發明說明(20) ...........................................…_ 侧邊壁^ - 400的鑄模完全蓋住先禱模之第 1 30的夕4,且應用蓋子2 _ 5〇〇加以覆蓋兩德 合物的介面位在當密封該封裝時 =兩輅模化 與重複鑄模該铸模的導線架之方法不同。此 線架2 - 100及如第一導線架2 _ 1〇〇的側邊=第—導 後,當安裝在導線架2導線架2 _ 2〇〇時,噹 飞70件之 =地本發明中。其中該第二導線架用於: 才旲中且為第一鵠模的一項障礙,而且對於黎鑄 中不需要的元件可加以去除’然後應用第二導線架^結構 20 0的侧邊壁,可製造用於第二鑄模的陣列。、木~ 者#封轉氣惠年,可以了解本發明的主要苗 、制.镱獻時晃肩的發生,如在鑄模後, 1社人控 ?時’需要晶片結合及線結合時導線= 氧樹脂鑄模化合物之樹脂的分散。在裱 =發生將產生許多的缺陷。—當發生=;理= 的技術以去除這些晃動。㈣該晃動以防、 = 疋位置壓縮同一位置上導線架兩側中最有效 的方式為形成鑄模的結構點。此為在導 控制晃動的方式,#中在由鑄模程序中, - 130時,該導線架屬於空氣腔2 _ 3〇(^但是,报難 住第—鑄模體2 _130之環氧樹脂鑄模化合物 為導線加所一 4 Γ的結構中的第一鑄模般,從兩側壓縮不 的某些部位。由使用在第-鎊模時硬化之 袁氧樹月曰鑄模化合物的表面中不同的特性而達到封鎖住晃Page 23 4343 V. Description of the invention (20) ......... ....… _ The side wall ^-400 of the mold completely covers the 4th of the 30th day of the first prayer mold, and the cover 2 _ 500 is used to cover the interface of the two German compounds when the package is sealed Hour = Two-chamber molding is different from the method of repeatedly molding the lead frame of the mold. This wire frame 2-100 and the side of the first lead frame 2 _ 100 are equal to the first lead. When mounted on the lead frame 2 and the lead frame 2 _ 200, when flying 70 pieces = the present invention. in. Wherein, the second lead frame is used for: an obstacle in the first mold, and the unnecessary components in Li Zhu can be removed, and then the side wall of the second lead frame structure 200 is applied. , An array for a second mold can be manufactured. 、 木 ~ 者 # 封 转 气 惠 年, you can understand the main seedlings and systems of the present invention. Shoulder shaking occurs during donation, such as after the mold is controlled by a company, when the chip bonding and wire bonding are required = Dispersion of oxyresin mold compound resin. Many defects will occur during mounting. — When this happens, the technique is used to remove these sloshing. ㈣This shaking to prevent, = 疋 position compression The most effective way to compress the same position on both sides of the lead frame is to form the structural point of the mold. This is the way to control the sloshing in the guide. In # 130 in the mold program, the lead frame belongs to the air cavity 2 _ 30 (^, but it is difficult to report the first-mold body 2 _130 epoxy mold compound) The first mold in the structure of 4 Γ is added to the wire, and some parts are not compressed from both sides. It is based on the different characteristics of the surface of the mold compound that is hardened when used in the first pound mold. Reach blockade
第24頁 4348S2 限於上述說 可在本發明 明的範圍。 發明具有下 之第二墊體 煞、應。第二 線架之間接 導電膠充入 導線架,可 一導線架係 另一蓋子進 程序十,應 導線不會滑 包含具有切 安裝區域。 側邊壁的第 所以大大地 效應。 明的第一及第 的精神及觀點 列各項 向外突 ,可以 地結構 側邊壁 去除該 在應用 行半導 用第二 出封裝 割端的 最後, 一每模 改進生 五、發明說明(21) 動的效應。 本發明並不受 例’熟習本技術者 更改而不偏離本發 上述說明的本 明具有第二導線架 大大地改進熱輻射 , ^ ···:-· -···-. ·. ,,,>: 金屬蓋子及第二導 電路的性能,考量 三.,經由鑄模第一 封程序,其中該第 成空氣腔後,應用 四’在各別封裝的 塑膠體,然後第二 f導線的封裝,其 可減少電路基板的 第—轉模程序,及 輕序可加以簡化, 了進行防溼能力的 二較佳實施 之内進行多項 優點。 伸出來 遮蔽磁 達成的 的穿越 傳統上 側邊壁 體結合 導線架 體,且 四邊。 當經由 程序, 產過時 第~, 的結構 波,而 話,貝 洞α之 使用的 及金屬 及線結 切割該 形成個 因此, 第一鑄 該基體 而且, 當本發 時,可 I ’當 可改進 故。第 依序密 蓋子形 合。第 鑄模的 別之沒 縮小化 模體的 的製造 也達到Page 24 4348S2 is limited to the foregoing and may be within the scope of the present invention. The invention has the following second pad body Sha, should. The second wire frame is connected between the conductive glue and the lead frame. One lead frame can be attached to the other cover. Procedure 10, the wire should not slip, including the cutting installation area. The effect of the side wall is greatly affected. The spirit and perspective of the first and the first columns of the Ming project are outwardly protruding, and the side walls of the ground structure can be removed. The end of the second output package used in the semiconducting line of the semiconductor package can be improved. ) Dynamic effect. The present invention is not changed by the example of a person skilled in the art without deviating from the above description of the present invention. The present invention has a second lead frame to greatly improve heat radiation, ^ ···:-·-···-. ,,,,,, , > Performance of the metal cover and the second conducting circuit, considering the third, through the first sealing process of the mold, wherein after the first air cavity, apply four 'in the plastic body of each package, and then the second f lead The package, which can reduce the first transfer mold process of the circuit substrate, and the light sequence can be simplified, and has multiple advantages within the two preferred implementations of the moisture-proof capability. Extending to cover the magnetic field, the side wall is traditionally combined with the lead frame, and it has four sides. When the program produces an outdated structural wave, the use of shell holes α and metal and wire knot cutting should form one. Therefore, the first casting of the substrate and, when this hair is made, I can Improve it. Sequentially dense lids are shaped. No. of the mold is reduced, and the manufacturing of the phantom is also achieved.
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Publication number | Priority date | Publication date | Assignee | Title |
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TWI408781B (en) * | 2011-01-25 | 2013-09-11 | Omnivision Tech Inc | Apparatus for forming protective tape on chip scale package and method of the same |
CN113793843A (en) * | 2021-09-30 | 2021-12-14 | 重庆平创半导体研究院有限责任公司 | Anti-irradiation packaging structure and method |
-
1999
- 1999-11-03 TW TW088119120A patent/TW434852B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI408781B (en) * | 2011-01-25 | 2013-09-11 | Omnivision Tech Inc | Apparatus for forming protective tape on chip scale package and method of the same |
CN113793843A (en) * | 2021-09-30 | 2021-12-14 | 重庆平创半导体研究院有限责任公司 | Anti-irradiation packaging structure and method |
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