TW432477B - Method for forming micro pattern of semiconductor device - Google Patents
Method for forming micro pattern of semiconductor device Download PDFInfo
- Publication number
- TW432477B TW432477B TW088120704A TW88120704A TW432477B TW 432477 B TW432477 B TW 432477B TW 088120704 A TW088120704 A TW 088120704A TW 88120704 A TW88120704 A TW 88120704A TW 432477 B TW432477 B TW 432477B
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- micro
- test pattern
- exposure
- micropattern
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/027—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
- G03F1/44—Testing or measuring features, e.g. grid patterns, focus monitors, sawtooth scales or notched scales
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-1998-0062023A KR100400294B1 (ko) | 1998-12-30 | 1998-12-30 | 노광마스크 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW432477B true TW432477B (en) | 2001-05-01 |
Family
ID=19568719
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW088120704A TW432477B (en) | 1998-12-30 | 1999-11-26 | Method for forming micro pattern of semiconductor device |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP2000195787A (ja) |
KR (1) | KR100400294B1 (ja) |
TW (1) | TW432477B (ja) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE60306438T2 (de) * | 2002-03-25 | 2007-01-04 | Asml Masktools B.V. | Verfahren und Vorrichtung zur Zerlegung von Halbleiter-Bauelementmustern in Phasen- und Chromregionen für chromfreie Phasenlithographie |
JP4190227B2 (ja) * | 2002-07-31 | 2008-12-03 | 富士通マイクロエレクトロニクス株式会社 | フォトマスク、その設計方法及びそれを用いた半導体装置の製造方法 |
KR100697172B1 (ko) * | 2002-07-31 | 2007-03-21 | 후지쯔 가부시끼가이샤 | 포토마스크 |
US7097945B2 (en) * | 2003-04-18 | 2006-08-29 | Macronix International Co., Ltd. | Method of reducing critical dimension bias of dense pattern and isolation pattern |
KR101714078B1 (ko) | 2011-10-20 | 2017-03-23 | 현대자동차주식회사 | 오토레버장치 |
CN108732861A (zh) * | 2018-04-26 | 2018-11-02 | 上海华力集成电路制造有限公司 | 一种集成电路研发用掩膜板 |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR19980026846A (ko) * | 1996-10-11 | 1998-07-15 | 김광호 | 더미패턴을 갖는 마스크 |
-
1998
- 1998-12-30 KR KR10-1998-0062023A patent/KR100400294B1/ko not_active IP Right Cessation
-
1999
- 1999-11-26 TW TW088120704A patent/TW432477B/zh not_active IP Right Cessation
- 1999-11-30 JP JP33988899A patent/JP2000195787A/ja not_active Withdrawn
Also Published As
Publication number | Publication date |
---|---|
KR100400294B1 (ko) | 2003-12-24 |
KR20000045465A (ko) | 2000-07-15 |
JP2000195787A (ja) | 2000-07-14 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |