TW430870B - Method for generating water for semiconductor production - Google Patents

Method for generating water for semiconductor production

Info

Publication number
TW430870B
TW430870B TW087109410A TW87109410A TW430870B TW 430870 B TW430870 B TW 430870B TW 087109410 A TW087109410 A TW 087109410A TW 87109410 A TW87109410 A TW 87109410A TW 430870 B TW430870 B TW 430870B
Authority
TW
Taiwan
Prior art keywords
hydrogen
water
oxygen
reactor
generation
Prior art date
Application number
TW087109410A
Other languages
English (en)
Inventor
Tadahiro Ohmi
Yukio Minami
Koji Kawada
Nobukazu Ikeda
Akihiro Morimoto
Original Assignee
Tadahiro Ohmi
Fujikin Kk
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tadahiro Ohmi, Fujikin Kk, Hitachi Ltd filed Critical Tadahiro Ohmi
Application granted granted Critical
Publication of TW430870B publication Critical patent/TW430870B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B5/00—Water
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B33/00—Silicon; Compounds thereof
    • C01B33/113—Silicon oxides; Hydrates thereof

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Formation Of Insulating Films (AREA)
  • Catalysts (AREA)
TW087109410A 1997-06-17 1998-06-12 Method for generating water for semiconductor production TW430870B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP15957197A JP3808975B2 (ja) 1997-06-17 1997-06-17 半導体製造用水分の発生方法

Publications (1)

Publication Number Publication Date
TW430870B true TW430870B (en) 2001-04-21

Family

ID=15696634

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087109410A TW430870B (en) 1997-06-17 1998-06-12 Method for generating water for semiconductor production

Country Status (9)

Country Link
US (1) US6093662A (zh)
EP (1) EP0922667B1 (zh)
JP (1) JP3808975B2 (zh)
KR (1) KR100327877B1 (zh)
CA (1) CA2263510C (zh)
DE (1) DE69825848T2 (zh)
IL (1) IL128491A (zh)
TW (1) TW430870B (zh)
WO (1) WO1998057884A1 (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113908776A (zh) * 2021-11-12 2022-01-11 西北核技术研究所 一种高浓度氢气高效转化为水的方法及装置

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW462093B (en) * 1997-03-05 2001-11-01 Hitachi Ltd Method for manufacturing semiconductor integrated circuit device having a thin insulative film
JPH10340909A (ja) 1997-06-06 1998-12-22 Hitachi Ltd 半導体集積回路装置の製造方法
JP3563950B2 (ja) * 1998-01-06 2004-09-08 株式会社ルネサステクノロジ 水素含有排ガス処理装置
EP1096351A4 (en) * 1999-04-16 2004-12-15 Fujikin Kk FLUID SUPPLY DEVICE OF THE PARALLEL BYPASS TYPE, AND METHOD AND DEVICE FOR CONTROLLING THE FLOW OF A VARIABLE FLUID TYPE PRESSURE SYSTEM USED IN SAID DEVICE
CN1279582C (zh) * 1999-08-06 2006-10-11 株式会社富士金 水分发生用反应炉
US6514879B2 (en) * 1999-12-17 2003-02-04 Intel Corporation Method and apparatus for dry/catalytic-wet steam oxidation of silicon
CN1202987C (zh) * 2000-06-05 2005-05-25 株式会社富士金 水分发生用反应炉
WO2002061179A1 (en) * 2001-01-19 2002-08-08 Tokyo Electron Limited Method and apparatus for gas injection system with minimum particulate contamination
JP2002274812A (ja) * 2001-03-23 2002-09-25 Fujikin Inc 水分発生用反応炉
DE10119741B4 (de) 2001-04-23 2012-01-19 Mattson Thermal Products Gmbh Verfahren und Vorrichtung zum Behandeln von Halbleitersubstraten
US20030124049A1 (en) * 2001-08-13 2003-07-03 Sowmya Krishnan Catalytic reactor apparatus and method for generating high purity water vapor
US20090028781A1 (en) * 2002-08-13 2009-01-29 Sowmya Krishnan Catalytic reactor method for generating high purity water vapor
US20040265215A1 (en) * 2003-06-26 2004-12-30 Decarli Don Method and system for generating water vapor
US9454158B2 (en) 2013-03-15 2016-09-27 Bhushan Somani Real time diagnostics for flow controller systems and methods
US10983537B2 (en) 2017-02-27 2021-04-20 Flow Devices And Systems Inc. Systems and methods for flow sensor back pressure adjustment for mass flow controller
CN113110635B (zh) * 2021-03-26 2023-08-18 北京北方华创微电子装备有限公司 半导体设备及外点火装置的温度控制系统、方法及控制器

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5684302A (en) * 1979-12-08 1981-07-09 Tanaka Kikinzoku Kogyo Kk Oxygen-hydrogen recombining apparatus
JPH02137703A (ja) * 1988-11-16 1990-05-28 Hitachi Ltd 酸素水素再結合器
JP3122125B2 (ja) * 1989-05-07 2001-01-09 忠弘 大見 酸化膜の形成方法
JP3379070B2 (ja) * 1992-10-05 2003-02-17 忠弘 大見 クロム酸化物層を表面に有する酸化不動態膜の形成方法
JP3331636B2 (ja) * 1992-10-05 2002-10-07 忠弘 大見 水分発生方法
JP3207943B2 (ja) * 1992-11-17 2001-09-10 忠弘 大見 低温酸化膜形成装置および低温酸化膜形成方法
JP3312837B2 (ja) * 1995-11-30 2002-08-12 アルプス電気株式会社 イオン水製造装置及び製造方法並びに電解イオン水製造システム及び製造方法
IL125366A (en) * 1996-01-29 2001-12-23 Fujikin Kk A method of generating moisture, a reactor for generating moisture, a method for cooling a reactor temperature to generate moisture and a method for creating a platinum-coated stripping layer.
JPH107403A (ja) * 1996-06-20 1998-01-13 Tadahiro Omi 水分発生方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113908776A (zh) * 2021-11-12 2022-01-11 西北核技术研究所 一种高浓度氢气高效转化为水的方法及装置
CN113908776B (zh) * 2021-11-12 2023-10-20 西北核技术研究所 一种高浓度氢气高效转化为水的方法及装置

Also Published As

Publication number Publication date
EP0922667A1 (en) 1999-06-16
CA2263510A1 (en) 1998-12-23
EP0922667A4 (en) 2003-05-28
IL128491A0 (en) 2000-01-31
EP0922667B1 (en) 2004-08-25
JPH1111902A (ja) 1999-01-19
DE69825848T2 (de) 2005-09-01
IL128491A (en) 2001-09-13
WO1998057884A1 (fr) 1998-12-23
JP3808975B2 (ja) 2006-08-16
CA2263510C (en) 2002-06-25
KR100327877B1 (ko) 2002-03-09
KR20000068114A (ko) 2000-11-25
DE69825848D1 (de) 2004-09-30
US6093662A (en) 2000-07-25

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Legal Events

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GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees