TW429435B - Method for improving dielectric seeping power by ion implantation - Google Patents
Method for improving dielectric seeping power by ion implantationInfo
- Publication number
- TW429435B TW429435B TW88106271A TW88106271A TW429435B TW 429435 B TW429435 B TW 429435B TW 88106271 A TW88106271 A TW 88106271A TW 88106271 A TW88106271 A TW 88106271A TW 429435 B TW429435 B TW 429435B
- Authority
- TW
- Taiwan
- Prior art keywords
- dielectric layer
- ion implantation
- seeping
- dielectric
- power
- Prior art date
Links
Landscapes
- Formation Of Insulating Films (AREA)
Abstract
The present invention relates to a method for improving the seeping power of a dielectric by an ion implantation. When a plurality of semiconductor structures are formed on a semiconductor substrate and a plurality of gaps are located in the plurality of semiconductor structures, the method comprises: forming a first dielectric layer on a semiconductor substrate; using an ion implantation procedure to dope ions such as B3<SP>+</SP>, F<SP>-</SP> and BF2 into the first dielectric layer, particularly into the first dielectric layer on the sidewall of the plurality of semiconductor structures; using a rapid heating process to treat the first dielectric layer to form B2O3 and SiOF in the first dielectric layer; and forming a second dielectric layer on the first dielectric layer. Since the SiOF can improve the step coverage of the second dielectric layer, and B2O3 can improve the heat flowing properties of the second dielectric layer, not only these gaps will be fully covered by the dielectric layers, but also no voids will exist in the second dielectric layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW88106271A TW429435B (en) | 1999-04-20 | 1999-04-20 | Method for improving dielectric seeping power by ion implantation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW88106271A TW429435B (en) | 1999-04-20 | 1999-04-20 | Method for improving dielectric seeping power by ion implantation |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW429435B true TW429435B (en) | 2001-04-11 |
Family
ID=21640364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW88106271A TW429435B (en) | 1999-04-20 | 1999-04-20 | Method for improving dielectric seeping power by ion implantation |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW429435B (en) |
-
1999
- 1999-04-20 TW TW88106271A patent/TW429435B/en not_active IP Right Cessation
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |