Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics CorpfiledCriticalUnited Microelectronics Corp
Priority to TW087101604ApriorityCriticalpatent/TW352470B/en
Application grantedgrantedCritical
Publication of TW352470BpublicationCriticalpatent/TW352470B/en
A method and process for forming a dielectric layer on a semiconductor layer comprising the following steps: first to provide a semiconductor substrate; to form a first semiconductor layer on the substrate; to implant ion on the first semiconductor layer; to render a protective layer on the first semiconductor layer; to proceed the first heat treatment in an effort to disperse the ion in the first semiconductor layer; to remove the protective layer; and to create a dielectric layer on the top of the first semiconductor layer.
TW087101604A1998-02-061998-02-06Method and process for promoting dielectric layer quality
TW352470B
(en)