TW429473B - Method for forming dielectric layer with capability to resist the diffusion of copper - Google Patents

Method for forming dielectric layer with capability to resist the diffusion of copper

Info

Publication number
TW429473B
TW429473B TW88122132A TW88122132A TW429473B TW 429473 B TW429473 B TW 429473B TW 88122132 A TW88122132 A TW 88122132A TW 88122132 A TW88122132 A TW 88122132A TW 429473 B TW429473 B TW 429473B
Authority
TW
Taiwan
Prior art keywords
dielectric layer
resist
diffusion
capability
copper
Prior art date
Application number
TW88122132A
Other languages
Chinese (zh)
Inventor
Ding-Jang Jang
Bo-Tsuen Liou
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW88122132A priority Critical patent/TW429473B/en
Application granted granted Critical
Publication of TW429473B publication Critical patent/TW429473B/en

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Abstract

A method for forming dielectric layer with a capability to resist the diffusion of copper comprises the steps of: first, providing a substrate and then performing a spin-on step to form a dielectric layer with a low dielectric constant on the substrate; then, sequentially performing a baking step and a curing step; and finally, performing a plasma processing step to the dielectric layer.
TW88122132A 1999-12-16 1999-12-16 Method for forming dielectric layer with capability to resist the diffusion of copper TW429473B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW88122132A TW429473B (en) 1999-12-16 1999-12-16 Method for forming dielectric layer with capability to resist the diffusion of copper

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW88122132A TW429473B (en) 1999-12-16 1999-12-16 Method for forming dielectric layer with capability to resist the diffusion of copper

Publications (1)

Publication Number Publication Date
TW429473B true TW429473B (en) 2001-04-11

Family

ID=21643400

Family Applications (1)

Application Number Title Priority Date Filing Date
TW88122132A TW429473B (en) 1999-12-16 1999-12-16 Method for forming dielectric layer with capability to resist the diffusion of copper

Country Status (1)

Country Link
TW (1) TW429473B (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727173B2 (en) 1998-09-03 2004-04-27 Micron Technology, Inc. Semiconductor processing methods of forming an utilizing antireflective material layers, and methods of forming transistor gate stacks
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6727173B2 (en) 1998-09-03 2004-04-27 Micron Technology, Inc. Semiconductor processing methods of forming an utilizing antireflective material layers, and methods of forming transistor gate stacks
US6828683B2 (en) 1998-12-23 2004-12-07 Micron Technology, Inc. Semiconductor devices, and semiconductor processing methods

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Legal Events

Date Code Title Description
GD4A Issue of patent certificate for granted invention patent
MM4A Annulment or lapse of patent due to non-payment of fees