TW423135B - Chip bonding pad structure and its package structure - Google Patents
Chip bonding pad structure and its package structure Download PDFInfo
- Publication number
- TW423135B TW423135B TW088112376A TW88112376A TW423135B TW 423135 B TW423135 B TW 423135B TW 088112376 A TW088112376 A TW 088112376A TW 88112376 A TW88112376 A TW 88112376A TW 423135 B TW423135 B TW 423135B
- Authority
- TW
- Taiwan
- Prior art keywords
- wafer
- pads
- identification
- pad
- patent application
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/544—Marks applied to semiconductor devices or parts, e.g. registration marks, alignment structures, wafer maps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/5442—Marks applied to semiconductor devices or parts comprising non digital, non alphanumeric information, e.g. symbols
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54426—Marks applied to semiconductor devices or parts for alignment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2223/00—Details relating to semiconductor or other solid state devices covered by the group H01L23/00
- H01L2223/544—Marks applied to semiconductor devices or parts
- H01L2223/54473—Marks applied to semiconductor devices or parts for use after dicing
- H01L2223/5448—Located on chip prior to dicing and remaining on chip after dicing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/0212—Auxiliary members for bonding areas, e.g. spacers
- H01L2224/02122—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body
- H01L2224/02163—Auxiliary members for bonding areas, e.g. spacers being formed on the semiconductor or solid-state body on the bonding area
- H01L2224/02165—Reinforcing structures
- H01L2224/02166—Collar structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/0555—Shape
- H01L2224/05552—Shape in top view
- H01L2224/05554—Shape in top view being square
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/0601—Structure
- H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/0612—Layout
- H01L2224/06179—Corner adaptations, i.e. disposition of the bonding areas at the corners of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
- H01L2224/45124—Aluminium (Al) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48257—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a die pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49171—Fan-out arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49177—Combinations of different arrangements
- H01L2224/49179—Corner adaptations, i.e. disposition of the wire connectors at the corners of the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
- H01L2224/8512—Aligning
- H01L2224/85121—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors
- H01L2224/85122—Active alignment, i.e. by apparatus steering, e.g. optical alignment using marks or sensors by detecting inherent features of, or outside, the semiconductor or solid-state body
- H01L2224/85125—Bonding areas on the body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/00014—Technical content checked by a classifier the subject-matter covered by the group, the symbol of which is combined with the symbol of this group, being disclosed without further technical details
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/386—Wire effects
- H01L2924/3862—Sweep
Landscapes
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Wire Bonding (AREA)
Description
A7 ,^ J 1 3 5 5005twf.d〇c/〇°8 B7 __--- 五、發明説明(f ) 本發明是有關於一種晶片之焊墊結構,且特別是有關 於一種具有辨識焊墊之晶片焊墊結構。 縮小積體電路元件產品之體積,一直是電子製造業上 長久以來的目標之一。產品體積的縮小意味著生產成本的 降低,也表示訊號之傳輸路徑的縮短’同時帶來產品性能 提高的優點。然而’欲達到上述目標’必須致力於材料改 良,或相關設備精密度需提高等課題。 影響稹體電路元件體積的關鍵因素之一,則在於構裝 技術的改善。現今以導線架(leadframe)爲晶片承載器 (carrier)之構裝方式,仍是相當普及和廣泛應用的技術; 而打導線(wire bonding)亦是常用及低成本的構裝技術。由 於半導體晶片的積集度逐漸提高,已堂堂邁入0.1 8微米量 產的時代,同時伴隨著每一晶片所需輸入/輸出接點數逐 漸增加,具有數百支接腳的構裝已是常見之產品,四排腳 扁平構裝件(Quad Flat Package, QFP)即是常見之例。然而, 以一般晶片結構來說,焊墊(bonding pad)皆配置於晶片之 四周,當半導體晶片遺集度提高,造成焊墊之間距(pitch ) 縮短,將引發構裝技術上許多困擾。例如:在打導線的製 程中,由於焊墊排列緊密,造成焊墊圖案辨識(pattern recognition)困難,打導線前之晶片對位(chip alignment)錯 襲,而造成製程錯誤,產品報廢。另外’年封厣(encapsulating) 製程中,因模流速度與模壓的影響,會產生導線傾倒(wire sweep)之現象,尤其是在構裝的四個角落,因爲通常不配 置焊墊,模流阻力較小,所以模流速度會增快,此增快之 3 本紙張尺度適用中國ΐ家操率(CNS ) A4规格(210X297公~~ j--------W 裝— (請先聞讀背面之注意事項再填寫本頁) 訂 經濟部智慧財產局貝工消費合作社印製 經濟部智慧財產局員工消费合作社印製 423135 五、發明説明(>) 模流衝擊附近焊墊之導線,將造成導線傾倒而產生短路, 使產品報廢。此種現象在焊墊間距縮小時,因導線間之距 離更小,而更容易發生短路,因而影響產品良率。 在美國專利第5684332號(Chen et al.)中所揭露者,爲 .消除角落導線傾倒現象的方法之一。主要是將對應於灌模 澆注口(molding gate)二側之角落中,鄰近之焊墊重複打 線,也就是同一焊墊與同一導腳,打上二條導線,以避免 角落的導線傾倒現象。此方法中對於晶片角落仍採空置方 式,雖然利用重複打線可以強化導線,但對於角落之模流 速度之減緩效果仍十分有限,仍會發生導線傾倒的現象, 況且在焊墊間距縮小時,仍會面對辨識不易及對位困難等 問題。 因此本發明的目的之一就是在提供一種晶片辨識焊 墊,配置於晶片之四個角落,有助於焊墊圖案辨識,以利 打導線製程之進行。 本發明的目的之二在於提供一種晶片辨識焊墊,作爲 一種防呆裝置,便於防呆檢測。 本發明的目的之三在於提供一種晶片辨識焊墊,配置 於晶片之四個角落,並與鄰近之導腳或連接桿以導線連 接’防止模流造成角落導線傾倒現象,提高產品良率。 爲達成本發明之上述和其他目的,提出一種晶片之焊 墊結構’在晶片的主動表面上已形成多個元件,多個電極 焊墊配置於晶片主動表面的四個邊上,且分別與元件電性 連接。而多個辨識焊墊則配置於晶片之主動表面的四個角 4 本紙張尺度適用中國國家揉牟(> A4規格(210X2?7公釐) (請先閱讀背面之注意事項再填寫本頁) -裝. 訂 423135 A7 B7 5005twf.d〇c/〇〇g 五、發明説明()) 落’且辨識焊墊不與元件連接,其中辨識焊墊與電極焊墊 之外型不同。 (請先閲讀背面之注意事項再填寫本頁) 而應用本發明之晶片焊墊結構的構裝,在辨識焊墊的 部分會以至少一條之導線連接辨識焊墊及其鄰近之導腳或 .連接桿。至於辨識焊墊的形狀可以大於電極焊墊,或是採 用不同形狀,比如L型或三角形等。由於辨識焊墊之外型 不同於電極焊墊,可提高打導線前之焊墊圖案辨識的能 力’提高製程良率。並且辨識焊墊可以助於晶片打導線前 之對準,並利於防呆檢測。由於構裝中辨識焊墊會與角落 之導腳或連接桿連接,而能獲致穩定的模流,因此可以減 少對附近焊墊之導線因模流衝擊造成之導線傾倒現象’提 商產品良率。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂,下文特舉一較佳實施例,並配合所附圖式,作詳 細說明如下: 圖式之簡單說明: 第1圖繪示依照本發明一較佳實施例的一種晶片的焊 墊結構。 經濟部智慧財產局WK工消費合作社印製 第2圖繪示相對於第1圖之剖面示意圖。 第3圖繪示應用本發明之晶片於構裝中之結構。 圖式之標示說明: 10:晶片 12 :主動表面 5 ( CNS ) ( 210X2974^*1 ~ A7 B7 5005twf.doc/008 五、發明説明(γ) 14 ;電極焊墊 16、16a、16b、16c、16d :辨識焊墊 18 :半導體基底 20 :元件 22a、22b、22c :介電層 24a、24b ' 24c :介層窗 26a、26b :線路層 28 :保護層 30 :導線架 32 =晶片座 34 :連接桿 36 :導腳 36a :內導腳部分 36b :外導腳部分 38 :導線 40 :封裝材料 42 :澆注口 實施例
請同時參照第1圖及第2圖,其中第1圖繪示依照本 發明一較佳實施例的一種晶片的焊墊結構:第2圖則繪示 相對於第1圖之剖面示意圖。晶片W係建構於—半導體 基底18上,比如爲矽基底》在其主動表面12(activesurface) 形成有多個元件20,比如是金氧半電晶體(MOS 6 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) (請先閲讀背面之注意事項苒填寫本頁)
T 經濟部智慧財產局8工消費合作社印製 423135
5005twf.doc/00S A7 B7 五、發明説明(s) transistor)、電阻、電容、電感等。兀件20上覆蓋有多層 介電層、22b、22c,及線路層26a、26b,透過介電層 22a、22b、22c 中的介層窗 24a、24b、24c(via),與線路層 26a、26b中的線路,連接元件20之電極(electrode),以形 成複雜之內連線網路(interconnection network)。元件20之 電極透過內連線網路,連接至焊墊14(bonding pad),以作 爲對外之訊號接點。在此定義有連接元件電極之焊墊14 爲電極焊墊。然而本發明中之辨識焊墊16亦配置於主動 表面12上’然而辨識焊墊16不與任何元件之電極連接, 呈浮置狀態(floating)。電極焊墊μ與辨識焊墊16上覆蓋 有一保護層28(passivation layer),僅暴露出電極焊墊14 與辨識焊墊16欲打導線的部分,以保護下方之元件^保 護層28之材質通常爲氧化矽 '氮化矽、聚亞醯胺 (polyimide),或其組合。 如第1圖所示’本發明係將電極焊墊14配置於晶片10 的四邊;而辨識焊墊16a、16b、16c、16d則配置於晶片10 之四個角落。在設計上’辨識焊墊l6a、16b、i6c、i6d 採用不同於電極焊墊I4之外型,選用易於辨識之幾何圖 形。比如辨識焊墊16a、16c採用L型;辨識焊墊16b則 採用三角形;而辨識焊墊l6d則採用類似電極焊墊14之 形狀,但尺寸較大之型態,以利焊墊圖案辨識。習知採用 之反光型焊墊圖案辨識系統,由於辨識焊墊16a'16b、16c、 16d外型不同於一般電極焊墊14,因此辨識容易,可提高 辨識力。至於習知定位系統(aUgnment system)係利用電極 7 本紙張尺度適用中國囷家椟率(CNS ) A4規格(210χ297公;^ ) f請先聞讀背面之注#^項再填寫本頁j ,裴· -11 經濟部智慈財產局員工消費合作社印製 ^^3135 S005twf.d〇 c/008 A7 B7 經濟部智慧財產局員工消費合作社印製 五、發明説明(匕) 焊S作爲定位基準,本發明中可由具有不同圖案之辨識焊 塾取代,可增加定位之精確度及速度。此外,本發明係將 不同圖案之辨識焊墊配置於晶片角落,可以作爲防呆設 計’可輕易地辨別晶片應擺置之方向,不會誤置晶片。因 &避免因反向作業造成之製程中斷,或產品報廢。 請參照第3圖,其繪示應用本發明之晶片於構裝中之 結構。以一般QFP構裝爲例,用於QFP構裝之承載器爲 導線架30,其至少包括一晶片座32,用以擺置晶片;晶 片座32係以多個連接桿34(SUpp〇rtbar)固定於導線架30。 圍繞於晶片座32周緣爲導腳36(lead),其包括內導腳部分 36a(inner lead portion)及外導腳部分 36b(outer lead P<mi〇n)。導線架30之基材通常爲銅,而其上可能有多層 之鍍層。構裝時,本發明中具有辨識焊墊16a、16b、16c ' 之晶片ι〇係以其背面(未繪示)貼附於晶片座32,可以 利用導電或絕緣接合材料(adhesive)。此時由於晶片10具 有辨識焊墊,可以精確地擺置與定位。 接著,進行打導線製程,以導線38連接電極焊墊14 與對應之導腳36的內導腳部分36a,導線38之材質比如 爲金或鋁。至於辨識焊墊l6a、16b、16c、16d的部分, 可以直接以一條導線38連接辨識焊墊16d與其鄰近之連 接桿34 ;或是以多條導線38連接辨識焊墊16a、16c與其 鄰近之連接桿34。或是如辨識焊墊10b,亦可以用導線38 連接至鄰近之空腳(no connecting pin)。在電性上,辨識焊 墊可以選擇性地接地或採浮置狀態。需強調的是,上述辨 本紙張尺度逋用中國國家標準(CNS ) A4規格(210X297公釐) I. ί i 裝 !| 訂 I f.^ (請先閱讀t·面之>i-意事項再填寫本1) A7 B7 423135 5005twf,doc/008 五、發明説明(7) 識焊墊的形狀或其打導線的方式,可以做其他變化或任意 組合,比如改變其他形狀等。 然後進行灌膠製程(molding or encapsulating),將完成 打導線之晶片10及導線架3〇,置入—模具(未繪示)中, 將一封裝材料40灌入模具。此時,封裝材料40將包覆晶 片1〇、晶片座32、連接桿34、導線38及導腳36之內導 腳部分30a,以保護晶片10及晶片10與導腳36連接的部 分。封裝材料40之材質比如是環氧樹脂(ep0Xy),或樹脂 (resin)等。當封裝材料4〇自模具之澆注口灌入時(如箭號 42所示),由於四個角落配置有辨識焊墊i6a、i6b、i6c、 l6d,並以導線38與鄰近之連接桿34或導腳36連接,因 此可以減緩模流在角落之流速,而能有穩定的膠料流動, 避免導線傾倒(wire sweep)的現象。本發明中辨識焊墊係 與習知電極焊墊於同一製程中形成,不會增加製程。而後 續構裝製程亦沿用習知打導線或灌膠製程與設備,無須投 資其他製造成本,卻能提高產品良率,而維持原有之可靠 度。 綜上所述,本發明至少具有下列優點: 1. 本發明之辨識焊墊,配置於晶片之四個角落,有助 於焊墊圖案辨識,以利打導線製程之進行以及提高該製程 的精度與速度。 2. 本發明的辨識焊墊’可作爲一種防呆裝置,便於防 呆檢測以及晶片定位。 3. 具有本發明辨識焊墊之晶片應用於構裝時,配置於 9 --------^丨裝------訂------ (請先閱讀背面之注項再填寫本頁) 經濟部智慧財產局8工消费合作社印製 本紙張尺度適用中國國家標牟(CNS ) A4規格(210X297公釐) 4 2 313 5 Μ 5005twf.doc/008 五、發明説明(2 ) 晶片四個角落的辨識焊墊,與鄰近之導腳或連接桿以導線 連接,可以防止模流速度過高造成角落導線傾倒現象,提 高產品良率。 雖然本發明已以一較佳實施例揭露如上,然其並非用 .以限定本發明,任何熟習此技藝者,在不脫離本發明之精 神和範圍內,當可作些許之更動與潤飾,因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 (請先聞讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本紙張尺度遑用中國國家標準(CNS ) A4規格(210X297公釐)
Claims (1)
- 經濟部智慧財產局貝工消費合作社印製 1. 一種晶片之焊墊結構,應用於一晶片中,該晶片至 少具有一主動表面,且該主動表面至少具有複數個元件形 成於其中,而該晶片約略呈一矩形,該晶片之焊墊結構包 括: 複數個電極焊墊,配置於該晶片之該主動表面的四個 邊上,且該些電極焊墊分別與該些元件電性連接;以及 複數個辨識焊墊,配置於該晶片之該主動表面的四個 角落,且該些辨識焊墊不與該些元件連接, 其中該些辨識焊墊與該些電極焊墊之外型不同。 2. 如申請專利範圍第1項所述晶片之焊墊結構,其中 該些辨識焊墊較大於於該些電極焊墊。 3. 如申請專利範圍第1項所述晶片之焊墊結構,其中 該些辨識焊墊與該些電極焊墊具有不同之形狀。 4. 如申請專利範圍第3項所述晶片之焊墊結構,其中 些電極焊墊約略呈一矩形,且該些辨識焊墊約略呈一 L 型< 5. 如申請專利範圍第3項所述晶片之焊墊結構,其中 些電極焊墊約略呈一矩形,且該些辨識焊墊約略呈一三角 形。 6. —種晶片構裝結構,包括: 一晶片,略呈一矩形,該晶片具有一主動表面及一背 面,且該主動表面至少具有複數個元件形成於其中;該晶 片包括: 複數個電極焊墊,配置於該晶片之該主動表面的四邊 _..... __Μ_______ 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐) (請先閱讀背面之注意事項再填寫本頁) ^-----— II 訂·! 線·.ί I!——:------------ L 23 1 3 5 5005twfl.doc/002 A8 B8 C8 D8 六 經濟部智慧財產局員工消費合作社印製 申請專利範圍 上’且該些電極焊墊分別與該些元件電性連接;以及 複數個辨識焊墊,配置於該晶片之該主動表面的四個 角落,且該些辨識焊墊不與該些元件連接, 其中該些辨識焊墊與該些電極焊墊之外型不同; 一晶片座’約略呈一矩形,該晶片座具有複數個連接 桿與之連接’其中該晶片以該背面與該晶片座貼合; 複數個導腳,配置於該晶片之周緣,每一該些導跏具 有一內導腳部分及一外導腳部分; 複數條導線,用以連接該些電極焊墊及該些辨識焊墊、 與該些導腳之該些內導腳部分及該些連接桿;以及 一封裝材料,包覆該晶片、該晶片座、該些連接桿、 該些導線及該些導腳之內導腳部分。 7. 如申請專利範圍第6項所述之晶片構裝結構,其中 該些辨識焊墊之一鄰近該些連接桿之一,且以該些導線之 一連接該辨識焊墊與該連接桿。 8. 如申請專利範圍第6項所述之晶片構裝結構,其中 該些辨識焊墊之一鄰近該些導腳之一,且以該些導線之一 連接該辨識焊墊與該導腳之該內導腳部分。. 9. 如申請專利範圍第6項所述之晶片構裝結構,其中 每一該些辨識焊墊至少有二條以上之該些導線與之連接。 10. 如申請專利範圍第9項所述之晶片構裝結構,其中 該些辨識焊墊之一鄰近該些連接桿之一,且至少二條以上 之該些導線連接該辨識焊墊與該連接桿。 11. 如申請專利範圍第9項所述之晶片構裝結構,其中 12 (請先閱讀背面之注意事項再填寫本頁) ,-------訂. 線 — --------:---.------------ k紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐:) A8B8C8D8 423135 5005twfl.doc/002 六、申請專利範圍 該些辨識焊墊之一鄰近該些導腳之一,且至少二條以上之 該些導線連接該辨識焊墊與該導腳之該內導腳部分。 12. 如申請專利範圍第6項所述之晶片構裝結構,其中 該些辨識焊墊較大於於該些電極焊墊。 13. 如申請專利範圍第6項所述之晶片構裝結構’其中 該些電極焊墊約略呈一矩形,且該些辨識焊墊約略呈一 L 型。 14. 如申請專利範圍第6項所述之晶片構裝結構,其中 該些電極焊墊約略呈一矩形,且該些辨識焊墊約略呈一三 角形。 (請先閱讀背面之注意事項再填寫本頁) --------訂i •線丨( 經濟部智慧財產局負工消費合作社印製 本紙張尺度適用中國國家標準(CNS)A4規格(210 X 297公釐)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW088112376A TW423135B (en) | 1999-07-21 | 1999-07-21 | Chip bonding pad structure and its package structure |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW088112376A TW423135B (en) | 1999-07-21 | 1999-07-21 | Chip bonding pad structure and its package structure |
Publications (1)
Publication Number | Publication Date |
---|---|
TW423135B true TW423135B (en) | 2001-02-21 |
Family
ID=21641594
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW088112376A TW423135B (en) | 1999-07-21 | 1999-07-21 | Chip bonding pad structure and its package structure |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW423135B (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8994156B2 (en) | 2011-07-06 | 2015-03-31 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages with solder joint enhancement elements |
EP2849224A3 (en) * | 2013-09-03 | 2015-07-22 | Renesas Electronics Corporation | Semiconductor device |
-
1999
- 1999-07-21 TW TW088112376A patent/TW423135B/zh not_active IP Right Cessation
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8994156B2 (en) | 2011-07-06 | 2015-03-31 | Advanced Semiconductor Engineering, Inc. | Semiconductor device packages with solder joint enhancement elements |
TWI483318B (zh) * | 2011-07-06 | 2015-05-01 | Advanced Semiconductor Eng | 電子裝置及其製造方法 |
EP2849224A3 (en) * | 2013-09-03 | 2015-07-22 | Renesas Electronics Corporation | Semiconductor device |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7339258B2 (en) | Dual row leadframe and fabrication method | |
TW488042B (en) | Quad flat non-leaded package and its leadframe | |
TW447059B (en) | Multi-chip module integrated circuit package | |
TW517318B (en) | Semiconductor device | |
KR20050020500A (ko) | 적층 가능한 리드 프레임을 갖는 얇은 반도체 패키지 및그 제조방법 | |
US4959706A (en) | Integrated circuit having an improved bond pad | |
TW395038B (en) | Lead frame | |
TW423135B (en) | Chip bonding pad structure and its package structure | |
TW507502B (en) | Semiconductor module | |
US5468991A (en) | Lead frame having dummy leads | |
TWI651827B (zh) | 無基板封裝結構 | |
TW469610B (en) | Package structure having testing pads on chip | |
KR20010037246A (ko) | 리드프레임 및 이를 이용한 반도체패키지 | |
KR20010068513A (ko) | 윈도우가 구비된 회로기판을 포함하는 적층 칩 패키지 | |
TW393743B (en) | A lead frame | |
KR100235108B1 (ko) | 반도체 패키지 | |
CN210778553U (zh) | 一种新型陶瓷材质的半导体封装 | |
JPH0653266A (ja) | 半導体装置 | |
KR19990041909A (ko) | 반도체 칩 | |
TW452958B (en) | Structure for connecting turbulence plate to the inner lead | |
JP2913858B2 (ja) | 混成集積回路 | |
JPH0750380A (ja) | 半導体装置 | |
TW201715677A (zh) | 不著檢出測試方法及其所用之基板與壓板 | |
KR20080051197A (ko) | 반도체 패키지 | |
JP3528366B2 (ja) | 集積回路装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GD4A | Issue of patent certificate for granted invention patent | ||
MM4A | Annulment or lapse of patent due to non-payment of fees |