A7 ___B7___ 五、發明說明（） 5-1發明領域： 本發明係有關於一種應用於半導體熱處理製程中用以 調整晶圓表面溫度分佈的方法’特別是有關於一種與用於 快速加熱製程中，於離線狀態下量測晶圓表面之溫度相依 特徵值（Temperature-Dependant Character)，以調整於 快速加熱製程中晶圓表面溫度分佈狀態的方法。 5-2發明背景： 熱處理製程（Thermal Treatmen)係為積體電路製程中 項應用極為廣泛的的單元製程’諸如閉極回火、源/ :及極 區域中雜質的趨入、氧化層的成長、金屬矽化物的形成反 應，與硼磷矽玻璃（BPSG)的熱流與再熱流裎序，都需要應 用到相關的熱處理設備以及其製程方法。而為了適應各種 不同製程的需求，熱處理設備的種類也衍生出十分繁多的 面貌。由於積體電路的設計日趨複雜，元件間的積集度也 曰漸的升高，也因此使得製造積體電路的製造種序變得十 分繁瑣。在此趨勢下，一些於半導體後段製程中出現的熱 處理程序，常會影響到先前步驟中所形成各部結構的特 性。舉例而言’當積體電路中MOS電晶體内的源/汲極摻雜 區域形成之後，任何後續的熱處理製程都將會使得其中的 雜質繼續往半導體基材内部擴散而影響其導電性。因此對 現今的熱處理製程而言，如何精密控制其製程環境，如， 本紙張尺度適用令國國家標準（CNS)A4規格（210 X 297公釐） — — — — — — ^~^ I I I . . ·--. (請先閱讀背面之注意事項再填寫本頁) 訂- 經濟部智慧財產局員工消費合作社印製 421832 A7 B7 五、發明說明（） ------------}--裝— - V (請先閱讀背面之注意事項再填寫本頁) 加熱時間、加熱溫度、加熱溫度分佈的平均性等，將成為 半導體製程中關鍵性的因素之一。 為了有效進行晶圓的熱處理製程，又不會影響元件摻 閘區域的摻質，分佈’快速加熱製程（Rapid Thermal Pro cessing)即成為目前業界常用的熱處理製程。不同於傳 統熱處理s又備利用熱傳導（c 0 n d u c t i ο π )或熱對流 (Convection)的方式一次對多片晶圓同時加熱，快速加熱 製程係利用熱輻射（Rad i a t i on)效應一次處理單片晶圓*透 過多個加熱燈管同時產生的大量輻射熱能，將可以在數秒 内將晶圓升高到所；需要的溫度之上。一般而言，雖然快速 加熱製程一次僅能處理一片晶圓，然而由於其驚人的加熱 速度，其總產能將不會較傳統的熱處理製程來的差。此外’ 由於快速加熱製程進行的時間十分短暫，因此其中元件摻 雜區域的擴散現象將可減少到非常輕微的程度β 經濟部智慧財產局員工消費合作社印製 由於怏速加熱製程的進行時間十分短暫，因此如何有 效控制晶圓表面於加熱過程中受熱的均勻性，將會是提高 此一製程精確程度的一個重要課題。舉例而言，當晶圓表 面溫度受熱不均時’將會產生部份區域應力集中的情形。 若當此應力集中的情形嚴重惡化時，將會造成晶圓原子結 晶面的滑動，甚至會造成半導體元件的扭曲。 為了有效的控制快速加熱製程中溫度分佈的情形，傳 統上會在晶圓的快速加熱設備中安裝多個偵測熱輻射能強 度的探針（Probe)，以量測晶圓特定位置上的溫度分佈情 形，並透過這些特定位置上的探針調整加熱燈管的輸出功 本纸張尺度適用中國國家標準（CNS)A4規格（210 X 297公楚） 421832 A7 B7 五、發明說明（ 率。然而此一安置 一些問題 例而言， 輻射強度 溫度未必 由於加熱 之熱量分 量測角度 的因素β 綜上 勻而產生 設備中量 使得其量 由於快速 將有所不 能夠真實 燈管之間 佈與晶圓 等，都是 所述，為 的種種製 測晶圓表 出此一調整晶圓表 以期克服習知技藝 於系統内部的溫度量測系統，亦存在有 測溫度的精確性無法進一步的提昇。舉 加熱設備之反應室中，不同位置上的熱 同’因此在特定位置上之探針所測得的 反應晶圓表面溫度分佈的情形。此外， 熱輻射區域相互重疊的問題、晶圓週邊 主體不連續的現象，以及探針的位置以 探針無法準確的獲得晶圓表面受熱情形 了克服晶圓於快速加熱製程中受熱不均 程問題，並同時改善傳統上於快速加熱 面溫度分佈的.不精確性，本發明因而提 面於熱處理製程下之受熱分佈的方法， 中的種種缺憾。 5-3發明目的及概述： 本發明之目的為在提供一種於熱處理製程中調整晶圓 表面受熱溫度分佈之方法。 I i—1—I (，-裝·！一—I 訂·11————r' (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 本發明揭露了一種於半導體熱處理製裎中調整晶圓表 面溫度分佈之方法。首先將晶圓置於熱處理系統中進行熱 處理。接著將晶圓自熱處理系統中取出，並於晶圓表面以 環形取樣的方式量測出該晶圓表面之溫度相依特徵值，如 k紙張尺度適用中國國家榡準（CNS)A4規格（210 X 297公釐） 42^832 A7 五、發明說明（ 電阻值、厚度等。再將由所|丨 重項j #的溫度相依特徵值配合 數值計算方法’以求得熱處理备站 、爽理系統中不同位置上之探針的 溫度相依特徵值。將這些探舯沾、w Λ& —保針的溫度相依特徵值減去目標 值後，再除以相對應於該溫戶鈿斤枯视仕& a 咖·度相依特徵值的靈敏度，以得 到各個探針位置上的溫度修正灰 又U止参數β最後再利用這些溫度 修正參數調整熱處理系統加熱時的溫度分佈情形。 5-4圖式簡單說明： 第1圖 第2圖 第3圖 第4圖 第5圈 為一個快速加熱設備之剖面示意圖。 為本發明中利用一維方式量測晶圓表面電阻 值之示意圖。 為本發明中利用環形方式量測晶圓表面電阻 值之示意圖。 為本發明尹利用内插法計算不同探針位置處 之晶圓表面電阻值的示意圖。 為本發明中利用晶圓表面電阻值以修正晶圓 於快速加熱設備中表面受熱的溫度分佈情 形》 -----^------{3— 裝— (請先閱讀背面之注意事項再填寫本頁) -SJ· 經濟部智慧財產局員工消費合作社印製 5-5發明詳細說明 本發明提出了一種利用量測晶圓表面不同位置上之溫 度相依特徵值（Temperature Dependant Character)，如晶 本紙張尺度適用中國國家標準（CNS>A4規格（210x297公釐) ^2 183 2 A7 B7 五、發明說明（ I H ·1 n I H ^1 % \ t . - - Q (請先閱讀背面之注意事項再填寫本頁) 圓表面電阻值、厚度等，的方式以獲得晶圓於快逮加熱設 備令其表面受熱的溫度分佈情形。再利用此晶圓表面’的2 度分佈，計算出快速加熱設備中的加熱溫度修正參數，進 而更精確控制加熱時晶圓表面溫度分佈的均勻度。為了說 明本發明之精神，以下將首先介紹目前業界常用的快速加 熱設備的各部份組成結構，之後再以具體的實施例說明本 發明實際應用的方式。 首先請參閱第1圖，顯示了一個快速加熱設備的結構 剖面示意圈。如圖中所示，快速加熱設備10Q的頂端係由 多個加熱器102所組成。而加熱器102所發出的熱輻射能 將會穿過石英窗104而進入反應室1〇5中。此外，反應室 105的兩侧則分別與製程氣體入口 ι〇6與製程氣·體出口 相連，以輸入各個半導體製程中所需的製程氣體，以及洩 放反應後的製程廢氣。一般而言，加熱器1〇2係為高功率 的齒素燈管’並可透過電壓的控制而調整輻射出的熱能。 由於此輻射熱能通過石英窗104時，會造成其溫度的上 升。囱此，石英窗104的周圍通常還會設計一些冷卻機構， 以保持其溫度落於適當的範圍之内。 經濟部智慧財產局員工消費合作社印製 晶圓110透過固定環Π2的挾持以安置於反應室1〇5 之中。由於固定環112係與晶圓週邊的區域相接觸， 並且由於固定環112與晶圓11〇的纟且成材質不盡相同，因 此將造成晶圓110週邊區域熱能傳遞不連續的現象，而如 此將進一步使得晶圓表面加熱時的溫度難以控制。為了克 服此一現象’通常固定環112將可以使用與晶圓1.1 〇相同 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） 421832 A7A7 ___B7___ 5. Description of the invention (5-1) Field of the invention: The present invention relates to a method for adjusting the surface temperature distribution of a wafer used in a semiconductor heat treatment process, and particularly to a method and a method for rapid heating. A method for measuring the temperature-dependent characteristic value of a wafer surface in an offline state to adjust a temperature distribution state of the wafer surface in a rapid heating process. 5-2 Background of the Invention: The thermal treatment process is a unit process that is widely used in integrated circuit processes, such as closed-end tempering, the influx of impurities in the source / polar regions, and the growth of oxide layers. The formation reaction of metal silicide and the heat flow and reheat flow sequence of borophosphosilicate glass (BPSG) need to be applied to the related heat treatment equipment and its process method. In order to meet the needs of various processes, the types of heat treatment equipment have also derived a very large number of features. As the design of integrated circuits becomes more complex, the degree of integration between components has also gradually increased, which has also made the manufacturing order of manufacturing integrated circuits extremely cumbersome. In this trend, some thermal processing procedures that occur in the back-end semiconductor process often affect the characteristics of the structures formed in the previous steps. For example, after the source / drain doped region in the MOS transistor in the integrated circuit is formed, any subsequent heat treatment process will cause the impurities therein to continue to diffuse into the semiconductor substrate and affect its conductivity. Therefore, for today's heat treatment process, how to precisely control the process environment, for example, this paper size applies the national standard (CNS) A4 specification (210 X 297 mm) — — — — — — ^ ~ ^ III.. ·-. (Please read the notes on the back before filling out this page) Order-Printed by the Intellectual Property Bureau Staff Consumer Cooperative of the Ministry of Economy 421832 A7 B7 V. Description of Invention () ------------ }-Packing—-V (Please read the precautions on the back before filling out this page) Heating time, heating temperature, and the uniformity of heating temperature distribution will become one of the key factors in the semiconductor manufacturing process. In order to effectively perform the heat treatment process of the wafer without affecting the doping of the device doped region, the distribution 'Rapid Thermal Process has become a commonly used heat treatment process in the industry. Different from traditional heat treatment, it also uses thermal conduction (c 0 nducti ο π) or thermal convection (Convection) to heat multiple wafers at the same time. The rapid heating process uses thermal radiation (Rad iati on) effect to process a single wafer at a time. Wafers * A large amount of radiant heat generated simultaneously through multiple heating lamps will raise the wafers to the required temperature in a matter of seconds. In general, although the rapid heating process can only process one wafer at a time, due to its amazing heating speed, its total capacity will not be worse than that of the traditional heat treatment process. In addition, because the rapid heating process takes a very short time, the diffusion phenomenon of the element doped region will be reduced to a very slight level. Β Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs, because the rapid heating process is very short Therefore, how to effectively control the uniformity of the heating of the wafer surface during the heating process will be an important issue to improve the accuracy of this process. For example, when the wafer surface temperature is unevenly heated ', stress will be concentrated in some areas. If this situation of stress concentration worsens severely, it will cause the sliding of the atomic crystal plane of the wafer and even cause distortion of the semiconductor element. In order to effectively control the temperature distribution in the rapid heating process, traditionally, a plurality of probes (probes) for detecting the intensity of thermal radiation energy are installed in the rapid heating equipment of the wafer to measure the temperature at a specific position of the wafer. Distribution conditions, and adjust the output function of the heating lamp through the probes at these specific positions. The paper size of the paper is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297). 421832 A7 B7 V. Description of the invention For this example of some problems, the radiation intensity and temperature may not necessarily be due to the angle of the heat component of the heating. Β In summary, the amount of equipment in the device will be uniform, so that the amount will not be able to be distributed between the real lamp and the crystal due to the rapidity. The circles and the like are all described. For the purpose of making wafer tables for this purpose, this wafer table is adjusted to overcome the temperature measurement system in the system that is known in the art. There is also a problem that the accuracy of the temperature measurement cannot be further improved. For example, in the reaction chamber of a heating device, the heat at different positions is the same as the temperature distribution of the reaction wafer surface measured by the probe at a specific position. In addition, the problem of overlapping heat radiation regions, the discontinuity of the main body around the wafer, and the position of the probe can not accurately obtain the heating condition of the wafer surface with the probe, which overcomes the problem of uneven heating of the wafer in the rapid heating process. At the same time, the traditional method of improving the temperature distribution of the fast heating surface is not accurate. Therefore, the present invention has various disadvantages in the method of heating distribution under the heat treatment process. 5-3 Purpose and Summary of the Invention: Purpose of the invention In order to provide a method for adjusting the heating temperature distribution on the surface of the wafer during the heat treatment process. I i—1—I (, -installation !! — I order · 11 ———— r '(Please read the precautions on the back first) (Fill in this page again.) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economics. The present invention discloses a method for adjusting the surface temperature distribution of a wafer in a semiconductor heat treatment system. First, the wafer is placed in a heat treatment system for heat treatment. The circle is taken out from the heat treatment system, and the temperature-dependent characteristic value of the wafer surface is measured by a circular sampling method on the wafer surface, such as k paper size. Use the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 42 ^ 832 A7 V. Description of the invention (resistance value, thickness, etc. Then the temperature-dependent characteristic value of the heavy item j # is combined with the numerical calculation method 'To find the temperature-dependent characteristic values of the probes at different positions in the heat treatment preparation station and the cooling system. Subtract the target values from the probe-dependent temperature-dependent characteristic values of these probes, and then divide by Corresponds to the sensitivity of the temperature-dependent characteristic value of the temperature and temperature, to obtain the temperature correction gray and U parameters at each probe position, and finally use these temperature correction parameters to adjust the heating system heating The temperature distribution situation at the time. 5-4 Schematic description: The first circle, the second circle, the third circle, the fourth circle, and the fifth circle are schematic sectional views of a rapid heating device. It is a schematic diagram of measuring the surface resistance value of a wafer by a one-dimensional method in the present invention. It is a schematic diagram of measuring the surface resistance value of a wafer by a ring method in the present invention. This is a schematic diagram of Yin's calculation of the wafer surface resistance values at different probe positions using interpolation. The present invention uses the surface resistance value of the wafer to correct the temperature distribution of the surface heating of the wafer in the rapid heating equipment "----- ^ ------ {3— 装 — (Please read the note on the back first Please fill in this page again) -SJ · 5-5 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economics Detailed description of the invention The present invention proposes a method for measuring temperature dependent characteristic values at different locations on the surface of a wafer. For example, the size of the crystal paper is applicable to the Chinese national standard (CNS > A4 specification (210x297 mm) ^ 2 183 2 A7 B7 V. Description of the invention (IH · 1 n IH ^ 1% \ t.--Q (Please read the back Please fill in this page again) to obtain the surface resistance value, thickness, etc. of the wafer in order to obtain the temperature distribution of the wafer heated by the heating equipment. Then use the 2 degree distribution of the wafer surface to calculate the fast The heating temperature correction parameters in the heating equipment, so as to more accurately control the uniformity of the temperature distribution of the wafer surface during heating. In order to explain the spirit of the present invention, the following first introduces each of the rapid heating equipment commonly used in the industry. The component composition structure will be described later with specific examples. First, please refer to FIG. 1, which shows a schematic cross-section of the structure of a rapid heating device. As shown in the figure, the top of the rapid heating device 10Q It consists of multiple heaters 102. The thermal radiation emitted by the heater 102 will pass through the quartz window 104 and enter the reaction chamber 105. In addition, the two sides of the reaction chamber 105 are respectively connected with the process gas inlet. ι〇6 is connected to the process gas and body outlets to input the process gas required in each semiconductor process and the exhaust gas after the reaction is released. Generally speaking, the heater 102 is a high-power toothed tube. 'The radiated thermal energy can be adjusted through voltage control. Because this radiant thermal energy passes through the quartz window 104, it will cause its temperature to rise. For this reason, there are usually some cooling mechanisms designed around the quartz window 104 to keep it. The temperature falls within the appropriate range. The printed wafer 110 printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs is held in the reaction chamber 105 by the holding of the fixed ring Π2. The fixed ring 112 is in contact with the area around the wafer, and the material of the fixed ring 112 and the wafer 110 is not the same. Therefore, the thermal energy transfer in the area around the wafer 110 will be discontinuous. It further makes it difficult to control the temperature when the wafer surface is heated. In order to overcome this phenomenon, usually the fixed ring 112 will be able to use the same as the wafer 1.1 〇 This paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) 421832 A7
五、發明說明（） 經濟部智慧財產局員工消費合作社印製 或是相近的材t ’如矽、或碳化，夕等。如此將可使得晶圓 11〇之週邊區域的溫度，與晶圓表面的其他區域不至產生 太大的差異。 固定環112則連接並安置於可轉動的石英座114之 上，而石英座114則固定於上軸承滑軌124處，而上軸承 滑軌124則與下軸承滑軌126以及其令的滾珠128構成一 組滾珠軸承。其中上軸承滑軌124係由磁性物質所構成， 並與一組致動器（Actuator)以磁力作用的方式相耦合。當 致動器的磁場發生變化時，上軸承滑軌124將透過石英座 114以及固定環112等機構帶動晶圓旋轉.，使得晶圓 可以利用旋轉的方式均勻的承受加熱器1〇2所發出的熱 能。一般而言，為了防止加熱器1〇2所發出的熱能會自晶 圓的週邊散失’石英座114的外部會覆蓋一層不透明物 質，如矽等材質，以防止熱量自晶圓週邊輻射而出。至於 上軸承滑執1 24、滾珠1 28、下軸承潸轨I 2 6的材質，則可 以是一般常用之耐高溫、耐磨耗的金屬或非金屬材料。 上軸承滑軌124、滚珠128、下軸承滑軌126則由基座 118予以支撐，以構成整個快速加熱設備100的主要結構。 值得一提的是，基座118的頂部通常會包含一層反射層 11 6，並與晶圓11 0間格一個中空區域1 2 0。此一設計將可 使得由加熱器102所產生的熱能，可進一步的自晶圓110 底部的反射層Π6反射至中空區域120中，以供加熱晶圓 110使用而增加此一快速加熱設備1〇〇的能量使用效率。 至於反射層116的材質，通常係選自鋁材並於其表面鍍上 本紙張尺度適用中國國家標準（CNS)A4規格（210x297公釐） (請先閱讀背面之注意事項再填寫本頁) .裝 訂· !c. 42l832 A7 B7 五、 經濟部智慧財產局員工消費合作社印製 發明說明（ ~層反射效果良好的物質。 而為了控制晶圓I 1 〇於快速加熱設備中的受熱情形’ 許多個用以量測溫度用的探針（pr〇be )丨2 2，將會自基座1 1 8 的外部伸入中空區域120中靠近晶圓u〇的怔置·上。一般 而言，探針122的設計係為折射率.·高的導管，並透過這些 導管將晶圓特定位置上的輻射熱能取樣至反應室105的外 部，再透過特殊的儀器以獲得該處的溫度。因此’透過多 個不同位置的探針122,將可概略的獲得快速加熱設備1〇〇 中的溫度分佈情形，並以各處探針122的溫度高低作為此 一系統調整反應室105中之加熱溫度分佈的參數。而於此 處所描述的快速加熱設備可由台灣應用材料公司所銷售的 RTP Mod I ’ 與 RTP Mod II 取得。 如前文所述，由於在快速加熱設備中無法對晶圓表面 溫度作精確的控制，因此本發明提出了一種透過離線量測 晶圓表面溫度相依特徵值的方法，如晶圓表面的電阻值、 厚度等，以克服此一情形。 請參閲第2圖，顯示了依據本發明之精神下所提出的 第一個實施例。首先將一片檢測用的晶圓2 〇 〇置於快速加 熱設備中進行熱處理。之後，將晶圓自快速加熱設備中取 出’並透過另一台儀器量測晶圊表面的電阻值。一般而士 當晶圓表面於熱製程中所承受溫度越高時，其相對應^電 阻值會相對的降低’而其溫度與電阻值之間的變化量通常 會有一定的比例。因此透過量測晶圓表面曾, 叫氣阻值的方法， 將可以得到晶圊表面於進行快速加熱製程0洋& τ約實際溫度分 泰紙張反度適用中國國家標準（CNS>A4規格（210 X 297公釐） ---:丨！--1 ..3)-裝-I ! I 訂· ! ---I -^'yl * 一 , (請先閱讀背面之注意事項再填寫本頁) 421832V. Description of the invention () Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs or similar materials such as silicon, or carbonized, and so on. In this way, the temperature of the peripheral area of the wafer 11 will not be much different from that of other areas on the wafer surface. The fixing ring 112 is connected and arranged on the rotatable quartz seat 114, and the quartz seat 114 is fixed on the upper bearing slide 124, and the upper bearing slide 124 is connected to the lower bearing slide 126 and its ordered ball 128. Forms a set of ball bearings. The upper bearing slide 124 is composed of a magnetic substance, and is coupled with a group of actuators in a magnetic force manner. When the magnetic field of the actuator changes, the upper bearing slide 124 will drive the wafer to rotate through the mechanism such as the quartz seat 114 and the fixed ring 112, so that the wafer can evenly withstand the emission from the heater 102 by rotating. Thermal energy. In general, in order to prevent the thermal energy emitted by the heater 102 from being dissipated from the periphery of the wafer, the outside of the quartz holder 114 is covered with a layer of opaque material, such as silicon, to prevent heat from radiating from the periphery of the wafer. As for the material of the upper bearing slide 1 24, the ball 1 28, and the lower bearing ball rail I 2 6, it can be a commonly used metal or non-metal material with high temperature resistance and wear resistance. The upper bearing slide 124, the ball 128, and the lower bearing slide 126 are supported by the base 118 to constitute the main structure of the entire rapid heating apparatus 100. It is worth mentioning that the top of the pedestal 118 usually includes a reflective layer 116, and a hollow area 1220 is spaced from the wafer 110. This design will enable the thermal energy generated by the heater 102 to be further reflected from the reflective layer Π6 at the bottom of the wafer 110 into the hollow area 120 for use in heating the wafer 110 and to increase this rapid heating device1. 〇 Energy use efficiency. As for the material of the reflective layer 116, it is usually selected from aluminum and plated on the surface. The paper size is applicable to Chinese National Standard (CNS) A4 (210x297 mm) (please read the precautions on the back before filling this page). Binding ·! C. 42l832 A7 B7 V. The invention of the Intellectual Property Bureau staff consumer cooperative of the Ministry of Economic Affairs printed a description of the invention (~ layers with good reflection effect. And in order to control the heating situation of wafer I 1 〇 in rapid heating equipment 'many A probe (pr0be) for measuring the temperature 22 will extend from the outside of the pedestal 1 1 8 into the hollow area 120 near the wafer u0. Generally, the probe The design of the needle 122 is a high refractive index tube, and through these tubes, the radiant heat energy at a specific location on the wafer is sampled to the outside of the reaction chamber 105, and then a special instrument is used to obtain the temperature there. A plurality of probes 122 at different positions can roughly obtain the temperature distribution in the rapid heating equipment 100, and use the temperature of the probes 122 in various places as the system to adjust the heating temperature distribution in the reaction chamber 105. Parameters. The rapid heating equipment described here can be obtained from RTP Mod I 'and RTP Mod II sold by Taiwan Applied Materials. As mentioned earlier, since the wafer surface temperature cannot be accurately controlled in the rapid heating equipment, this The invention proposes a method for measuring the temperature-dependent characteristic values of the wafer surface by offline measurement, such as the resistance value and thickness of the wafer surface, in order to overcome this situation. Please refer to FIG. 2, which shows the method according to the spirit of the present invention. The first embodiment proposed. First, a wafer 200 for inspection is placed in a rapid heating device for heat treatment. After that, the wafer is taken out of the rapid heating device and the crystal is measured by another instrument.圊 Surface resistance. Generally, when the wafer surface is subjected to a higher temperature during the thermal process, the corresponding resistance value will be relatively reduced ', and the change between its temperature and resistance value will usually be a certain amount. Therefore, by measuring the surface of the wafer, a method called air resistance value can be used to obtain the surface of the crystal wafer in the rapid heating process. Paper inversion applies Chinese national standard (CNS > A4 specification (210 X 297 mm) ---: 丨!-1 ..3) -pack-I! I order · --- I-^ 'yl * First, (Please read the precautions on the back before filling this page) 421832
發明說明（ 佈情形* 以第2圖為例，將晶圓2 0 0沿著A_A，轴線上取 位置的點’以並量測這些點的電阻值， 定 册了以獲得一個雷 阻值對應晶圓徑向距離的關係圖形。 电 Q田於日a圓表面 阻值將與晶圓表面的受熱狀態存在著—玄紐说 ^ ^ 疋關係，因此杂满 得了電阻值對晶圓徑向距離之關係之樓 田跟 便將可以此為基里 而得到晶圓200表面於快速加熱製程中的亩誉π由 巧具皿度分佈情 形’並進而藉由了解晶圓200表面的溫度分佈，以調整快 速加熱設備的加熱溫度分佈輪廓。 ' 雖然此一方法將可以獲得更精確晶圓表面溫度分佈情 形’然而此一量測電阻的取樣方法亦存在著一些優點與弱 點<以量測晶圓表面電阻的實施例而言，由於半導體基材 本身係為電的不良導體，而為了量測電阻值，必須於晶圓 表面植入一定量的挣質（Dopant)以增加其導電性。然而， 摻質植入的滚度通常不會是一個完全平整的面，當以量測 電阻的取樣點落於B-B·轴線上時，所得到電阻值相對於晶 圓半徑的關係將可能形成起伏較大的輪廓。因此可以明 瞭，若是以線性方式量測晶圓表面電阻值，將具有簡單以 及時間花費較少的優點，但將會產生取樣代表性不足的問 題。 請參閲第3圖，顯示了另一種量測晶圓表面電阻值的 取樣方式。如圖中所示，自晶圓300之中心向外分成三圈 以量測其表面電阻值。在此實施例中，係以等距離的方式 將晶圓300表面分成數個不同半徑的取樣區。圖中每一個 本紙張尺度適用t國國家標準（CNS)A4規格（2〗0 X 297公釐） (請先間讀背面之注意事項再填寫本頁) 裝！ —訂 -----I--产"· 經濟部智慧財產局員工消費合作社印製 421832 A7 B7 五、發明說明（ 標號即代表一個取樣的量測位置，而其中總共量測了 49個 點的電阻值。之後，將位於相同半徑之上的取樣點予以平 均，將可或得一個二維的電阻值對晶圆表面距離的關係分 佈圖。而其計方法則如下列公式所表示：Description of the invention (distribution situation * Take the second figure as an example, take the wafer 200 along A_A, take the points on the axis' to measure the resistance values of these points, and book to obtain a lightning resistance value corresponding The graph of the relationship between the radial distance of the wafer. The surface resistance of the electric Q field in Japan and Japan will have a relationship with the heating state of the wafer surface-Xuan Niu said ^ ^ 疋, so the resistance value is too full to the radial distance of the wafer The relationship between Lou Tian and Chen will be able to use this as a basis to obtain the surface area of the wafer 200 in the rapid heating process. The distribution of the surface temperature is determined by the skill level, and then by understanding the temperature distribution of the surface of the wafer 200, Adjust the heating temperature distribution profile of the rapid heating equipment. 'Although this method will obtain a more accurate wafer surface temperature distribution', this sampling method for measuring resistance also has some advantages and disadvantages < to measure wafers In the embodiment of the surface resistance, since the semiconductor substrate itself is a poor conductor of electricity, in order to measure the resistance value, a certain amount of dopant must be implanted on the surface of the wafer to increase its conductivity. However, Adulterants The entered roll is usually not a completely flat surface. When the sampling point of the measured resistance falls on the BB · axis, the relationship between the obtained resistance value and the wafer radius may form a large undulating contour. Therefore, it is clear that if the wafer surface resistance value is measured in a linear manner, it will have the advantages of simplicity and less time, but it will cause the problem of insufficient sampling representative. Please refer to Figure 3, which shows another quantity Sampling method for measuring the surface resistance value of the wafer. As shown in the figure, it is divided into three circles outward from the center of the wafer 300 to measure the surface resistance value. In this embodiment, the wafers are equally spaced. The 300 surface is divided into several sampling areas with different radii. Each paper size in the picture is applicable to the national standard (CNS) A4 specification (2) 0 X 297 mm. (Please read the precautions on the back before filling this page ) Install! —Order ----- I—Products " · Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs 421832 A7 B7 V. Description of the invention (the number represents a sampling measurement location, and the total measurement 49 points of electricity After the value of the sampling point located above the average to be the same radius, will be available, or a two-dimensional relationship between the resistance value of the surface of the wafer from the distribution of the method of FIG its count as indicated by the following equation:
C1 = P1 25 C^^^PktU C2 = J]^/8 2 C4 = ^PIc/24 經濟部智慧財產局員工消費合作社印製 此處必須予以說明的的是，由於本發明的精神在於利 用溫度相依特徵值以求得晶圓表面於快速加熱製程中的溫 度分佈狀態，因此對於晶圓量測的標的將不僅限於電阻 值，諸如晶圓厚度等溫度相依特徵值亦可以用來推算晶圓 表面的溫度分佈。此外關於線性取樣或是環形取樣將可以 視實際運用的需要而加以選擇’然而由於環形取樣具有較 佳的代表性，將能夠較真實的反應晶圓表面的溫度分佈° 至於環性取樣的圈數、各圈之問的距離’以及每圈中取樣 點的數目，將可視實際應用的需要而予以變化。 請參閱第4圖’當欲調整快速加熱設備中的溫度分佈 時，必須先獲得不同位置上探針的電阻值。而由於晶圓表 面的取樣區域不必然與探針的位置相同，因此必須透過一 些數值計算的方法獲得各個探針位置上的電阻值*在此實 施例中，此快速加熱設備具有6個位於不同位置上的探 針。如圃中所示，一個直徑為200mm的晶圓自其中心起算，C1 = P1 25 C ^^^ PktU C2 = J] ^ / 8 2 C4 = ^ PIc / 24 Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economy What must be explained here is that because the spirit of the present invention lies in the use of temperature Dependent characteristic values to obtain the temperature distribution of the wafer surface in the rapid heating process. Therefore, the target for wafer measurement will not be limited to resistance values. Temperature-dependent characteristic values such as wafer thickness can also be used to calculate the wafer surface. Temperature distribution. In addition, linear sampling or circular sampling can be selected according to the needs of practical applications. However, because circular sampling has better representativeness, it will be able to reflect the temperature distribution of the wafer surface more realistically. The distance between each circle 'and the number of sampling points in each circle will vary depending on the needs of the actual application. Please refer to FIG. 4 ’When adjusting the temperature distribution in the rapid heating equipment, the resistance values of the probes at different positions must be obtained first. And because the sampling area on the wafer surface is not necessarily the same as the position of the probe, the resistance value at each probe position must be obtained by some numerical calculation methods. * In this embodiment, this rapid heating device has 6 Position probe. As shown in the garden, a wafer with a diameter of 200mm counts from its center,
----- ----;0'裝！ —訂----I--^'.v (請先閱讀背面之注意事項再填寫本頁) 421832 A7 b7 五、發明說明（ 各探針pb P2、滋P6的分別位於距圓心25· 4、41. 4、兹95· 處。而上述之電阻值取樣位置C1、C2、C3、C4則位於距晶 圓圓心〇、30、60、90 mm的位置上。.至於由取樣電阻值計 算探針位置上的電阻值則可以透過簡單的内插公式獲得舉 例而言： 扪=C2 + (^^)X(C3-C2) 〇ς —q〇 i?6=C4+(^^)x(C4'C3) 經濟部智慧財產局員工消費合作社印製----- ----; 0 'loaded! —Order ---- I-^ '. V (Please read the notes on the back before filling out this page) 421832 A7 b7 V. Description of the invention (each probe pb P2, Zi P6 are located 25 · 4 from the center of the circle , 41.4, 95 ·, and the above-mentioned resistance value sampling positions C1, C2, C3, C4 are located at a position of 0, 30, 60, 90 mm from the wafer circle center. The resistance value at the needle position can be obtained through a simple interpolation formula. For example: 扪 = C2 + (^^) X (C3-C2) 〇ς —q〇i? 6 = C4 + (^^) x (C4 'C3) Printed by the Consumer Cooperative of the Intellectual Property Bureau of the Ministry of Economic Affairs
'**!1-QJI 裝—-----訂 -------- ί請先閱讀背面之注意事項再填寫本頁J 表示探針P3處的電阻值，而R6則表示探針P6 其中 處的電阻值 當各個探針位置上的電阻值都過獲得之後，將可進一 步的計算利用各個探針的溫度調整參數，以調整快速加熱 設備中的溫度分佈。計算時將利用靈敏度（Sensitivity) 與電阻值之間的關係，求得快速加熱設備各個探針的溫度 調整參數。舉例而言，一片具有硼離子植入的晶圓其靈敏 度S為-2.4(〇hm/sqrt)/C。此即意咮著，當晶圓表面溫度 上升1。(：時，其電阻值將降低2.4 〇hm/s(irt。在一個實際 的例子中，當第一片晶圓自快迷加熱設備中取出之後，置 於電阻量測儀器中量測電阻得到了下列數據： R3 探針的起始溫度參數=-8.4、-9.2 6· 1、-11.2 -7. η 火紙掁尺度適用中國國家標準（CNS)A4相核 X叫7厶移 - * I ! > Η 421832 A7 B7 五、發明說明（） 晶圓表面的起始電阻值與均勻度 283. 4/ 1.05¾ (其目標值為2 7 5 ) 經 濟 部 智 慧 財 產 局 員 工 消 費 合 h 社 印 製 其中探針的起始調整溫度參數係為一組輸入快速加熱設備 的參數，以控制其中加熱溫度的分佈狀態。欲計算快速加 熱設備的溫度修正參數時，首先將透過上述方法獲得之各 探針的電阻值，減去每個探針的目標電阻值，再除以靈敏 度，將可以獲得每個探針的溫度調整參數，進而修正快速 加熱設備中加熱溫度分佈情形。而實際經調整之後，將可 得到下列數據： 探針的起始溫度參數=-4.4、-5.0、-3,8、-3.4、- 2. 8 ' -7. 9 晶圓表面的起始電阻值與均勻度=273. 85/0. 594% (其目標值為275) 故，透過本發明所提出之方法，將可有效的改善晶圓表面 溫度分佈的均勻性。 最後請參閲第5圖，將本發明所提出之方法以流程圖 予以表示。如圖中所示，首先晶圓置於怏速加熱設備中進 行熱處理’如步驟502所示。接著將晶圓自快速加熱設備 中取出，以環形的方式並量測其表面的溫度相依特徵值（即 為阻值、厚度等），如步驟504。再將各環形取樣區域中的 特徵值予以平均，如步驟506所示。再利用取樣區域的特 本紙張尺度適用中國國家標準(CNS)A4規格（210 X 297公g 12 I—裝--------訂--------- (請先開讀背面之注意事項再填寫本頁) A7 421832 五、發明說明（ 徵值平均數’計算各個位置上之探針的特徵值，如步驟 508。接著求出探針之特徵值與目標值之間的距離，並將該 距離值除以相對應料徵值的$敏度，以獲得各個探針的 溫度修正參數，如㈣51Q所*。再㈣所求得的溫度修 正參數，冑整快速加熱設備的加熱溫度分佈狀態，如步驟 51 4。之後再判斷此晶圓表面的特徵值分佈是否落於可接受 的範圍之内，若是，則結束此校正調整流程’如步驟5丨6 ; ^否，則重回步驟5 0 2繼續調整快速加熱設備之加熱溫度 分佈流程，直到結果落於可接受之範圍内為止。 本發明以一較佳實施例說明如上，僅用於藉以幫助了 解本發明之實施，非用以限定本發明之精神，而熟悉此領 域技藝者於領悟本發明之精神後，在不脫離本發明之精神 範圍内’當可做些許更動潤飾及等同之變化替換，其專利 保護範圍當視後附之專利申請範圍及其等同領域而定《 ο -裝--- u ^V (請先閲讀背面之注意事項再填寫本頁) ·'**! 1-QJI Assembly —----- Order -------- ί Please read the precautions on the back before filling out this page. J indicates the resistance value at probe P3, and R6 indicates the resistance. After the resistance values at the positions of the probes P6 have been obtained, the temperature adjustment parameters of the probes can be further calculated to adjust the temperature distribution in the rapid heating device. During the calculation, the relationship between the sensitivity (Sensitivity) and the resistance value is used to obtain the temperature adjustment parameters of each probe of the rapid heating device. For example, a wafer with boron ion implantation has a sensitivity S of -2.4 (〇hm / sqrt) / C. This means that when the wafer surface temperature rises by one. (:, Its resistance value will be reduced by 2.4 0hm / s (irt. In a practical example, after the first wafer is taken out of the fan heating equipment, the resistance is measured by placing it in a resistance measuring instrument) The following data were obtained: The initial temperature parameters of the R3 probe = -8.4, -9.2 6 · 1, -11.2 -7. Η The standard of the fire paper is applicable to the Chinese National Standard (CNS) A4 phase core X called 7 厶 shift-* I ! > Η 421832 A7 B7 V. Explanation of the invention () Initial resistance value and uniformity of the wafer surface 283.4 / 1.05¾ (its target value is 2 7 5) Employees of the Intellectual Property Bureau of the Ministry of Economy The initial adjustment temperature parameter of the probe is a set of parameters for inputting rapid heating equipment to control the distribution state of the heating temperature. To calculate the temperature correction parameters of the rapid heating equipment, firstly, each probe obtained through the above method will be used. The resistance value of the needle, minus the target resistance value of each probe, and then divided by the sensitivity, the temperature adjustment parameters of each probe can be obtained, and then the heating temperature distribution in the rapid heating equipment is corrected. After the actual adjustment, Will be available under Column data: Initial temperature parameter of the probe = -4.4, -5.0, -3, 8, -3.4,-2. 8 '-7. 9 Initial resistance value and uniformity of the wafer surface = 273. 85 / 0. 594% (its target value is 275) Therefore, through the method proposed by the present invention, the uniformity of the surface temperature distribution of the wafer can be effectively improved. Please refer to FIG. 5 for the method proposed by the present invention. It is represented by a flow chart. As shown in the figure, the wafer is first placed in a rapid heating equipment for heat treatment 'as shown in step 502. Then the wafer is taken out from the rapid heating equipment, and the wafer is measured in a circular manner. Surface temperature-dependent characteristic values (ie resistance, thickness, etc.), as in step 504. The characteristic values in each ring-shaped sampling area are averaged, as shown in step 506. The special paper size of the sampling area is applicable to China National Standard (CNS) A4 Specification (210 X 297 g 12 I—Packing -------- Order --------- (Please read the precautions on the back before filling this page) A7 421832 V. Description of the invention (average of eigenvalues' calculates the characteristic value of the probe at each position, as in step 508. Then find the characteristics of the probe The distance between the value and the target value, and divides the distance value by the $ sensitivity of the corresponding material sign value to obtain the temperature correction parameters of each probe, as shown in ㈣51Q *. Then, obtain the temperature correction parameters obtained. , Adjust the heating temperature distribution status of the rapid heating equipment, as in step 51 4. Then determine whether the characteristic value distribution of the surface of the wafer falls within an acceptable range, and if so, end this calibration adjustment process, such as step 5丨 6; ^ No, return to step 5 2 and continue to adjust the heating temperature distribution process of the rapid heating equipment until the result falls within an acceptable range. The present invention is described above with a preferred embodiment, and is only used to help understand the implementation of the present invention, and is not intended to limit the spirit of the present invention. Those skilled in this field will not depart from the present invention after understanding the spirit of the present invention Within the scope of the spirit, 'it can be modified and replaced with equivalent changes. The scope of its patent protection depends on the scope of the attached patent application and its equivalent.' Ο-装 --- u ^ V (Please read the back first (Please fill in this page for the precautions)
C 經濟部智慧財產局員工消費合作社印製 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐）C Printed by the Consumer Cooperatives of the Intellectual Property Bureau of the Ministry of Economic Affairs This paper is sized to the Chinese National Standard (CNS) A4 (210 X 297 mm)