JP3100376B1 - Vertical heating device - Google Patents

Abstract

A vertical heating device that has a short heat treatment cycle, is capable of short-time processing, is energy-saving, can perform high-quality processing, and has a long heater life. Is an inner tube 8 made of a chemically and thermally stable material having a cylindrical shape, which stands upright so as to surround a space in which a heated object to be heated is stored, and an inner tube 8 surrounding the inner tube 8. An outer tube 9 is provided upright and made of a chemically and thermally stable material for maintaining the inside in an airtight space, and heaters 12 and 13 for heating the inside of the outer tube 9 and the inner tube 8. Then, the vacuum space 3 is formed so as to surround the outer tube 9.
The heaters 12 and 13 surround the outer tube 9 inside.
Is provided.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a vertical heating apparatus for heating a vertically long single heating object or a plurality of vertically stacked composite heating objects from the periphery thereof. The present invention relates to a vertical heating apparatus for uniformly heating semiconductor wafers from the periphery in order to perform a thermal CVD process in a state.

[0002]

2. Description of the Related Art A key technology in a semiconductor manufacturing process is high-precision thermal control. With the demand for ever-increasing miniaturization, higher speed, and lower cost of large-scale integrated circuits (ultra-LSIs), thin films formed in the ultra-LSI manufacturing process are required to be thinner and have higher quality. It has become.

The following characteristic conditions are also required for a batch type thermal diffusion apparatus (vertical diffusion apparatus) which has been used as a main apparatus since the oldest among semiconductor manufacturing apparatuses. (E) The processing temperature is as high as 800-1100 ° C, (f) the in-plane temperature distribution is ± 3 ° C or less, (g) the processing temperature is so high that there is no heavy metal contamination, and (h) the temperature rise / fall rate is 100 ° C.
/ Min or more, (k) must be power-saving from the viewpoint of ecology,

[0004] In an early stage of the development of process technology, a diffusion apparatus for processing a large number (100 or more) of semiconductor wafers at a time has been developed from a horizontal type in which a large number of semiconductor wafers are vertically arranged on a boat. However, in order to increase the diameter of the semiconductor wafer and minimize the floor area occupied in the clean room, a vertical diffusion device is frequently used from the middle. In this vertical diffusion apparatus, semiconductor wafers are stacked on a rack-shaped boat at intervals of 5 to 6 mm, the wafer is heated from the periphery, a reaction gas is introduced therein, and the wafer is processed by means of thermal CVD.

This vertical diffusion device is also called an inner tube for forming a gas flow path in a reaction tube of a silicon carbide sintered body impregnated with quartz or metal silicon called an outer tube. A quartz or silicon carbide sintered pipe having a large number of small holes formed in its peripheral surface is arranged, and a boat is arranged in this inner tube. The reactive gas flows through the gap between the outer tube and the inner tube, and a dopant is diffused on the semiconductor wafer, or a thin film is formed by a thermo-chemical reaction.
The outside of the outer tube is generally at atmospheric pressure, and in order to obtain a predetermined temperature, an electric furnace in which a heating wire is wired inside a heat insulating material arranged so as to surround the outer tube is configured.

[0006]

This vertical diffusion device is vertically long and the heater is disposed in the atmosphere.
There are several disadvantages. For example, since air between the outer tube and the heating wire causes convection, partial temperature unevenness occurs. To compensate for this, a cylindrical furnace wall
It must be divided into ~ 5 blocks and each must be individually temperature controlled. However, when the temperature is raised to the processing temperature and when the thin film is formed to maintain the high temperature state for a long time,
Since the amount of power applied to each block is different, the temperature control becomes very complicated in order to always equalize the temperature between the wafers.

Further, since the heater for heating the outer tube from the periphery is placed in the atmosphere containing oxygen, a metal having high oxidation resistance is selected. The heater that withstands the highest temperatures at present is a heating wire manufactured by Kantal GmbH of Germany. This heating wire was composed of 22% of Cr, 5.5% of Al, and the balance of Fe.
Alloy heating wire with a maximum heating temperature of about 1300 ° C
It is. The power required for the entire furnace is 60-80 kW
Because of the large power, a heating wire made of Kanthal having a wire diameter of 4 to 5 mm is formed in a coil shape of 10 to 30 mm, which is embedded inside a fine ceramic heat insulating material, and a part thereof is exposed from the heat insulating material. Thus, a heater for one block is used.

However, in order to heat the outer tube to a temperature of 1000 ° C. or higher, it is necessary to heat the heating wire to about 1300 ° C., and the heater is easily broken at a high temperature. Further, since the heating wire is linear with respect to the cylindrical furnace wall, the temperature distribution within the cylindrical surface is unlikely to be uniform. Further, since the upper limit of the temperature of the heater is limited to 1300 ° C., the temperature rising rate of the outer tube is 5 to 10 ° C./min.
Is the limit. Therefore, it takes time to heat from room temperature to a temperature of 1000 ° C. or more, which is a processable temperature, and the time of one processing cycle becomes longer.

As a method of compensating for the shortage of the heating rate, the inner wall including the outer tube and the whole heated object are introduced while the temperature of the furnace wall is not returned to the normal temperature but kept at a temperature of 300 to 500 ° C. Or discharge method. However, in this case, when the semiconductor wafer is introduced, the semiconductor wafer disposed on the upper end side of the boat is exposed to a high temperature in the air, so that an oxide film is generated on the surface of the semiconductor wafer, and the reliability of the semiconductor device is reduced. Becomes
As a method for avoiding this, a method is known in which the space on the inner tube and the side of the heated object is evacuated, and then the entire outer tube is inserted into and out of the furnace. However, in this method, the evacuation system is complicated and the vacuum must be imperfect, so that the formation of an oxide film by the residual gas similarly becomes a problem.

Even when the semiconductor wafer is discharged, the semiconductor wafer disposed at the upper end of the boat is exposed to the high temperature for a long time in the residual gas even if the inside of the outer tube is kept at a vacuum. Unevenness is likely to occur on the surface of the semiconductor wafer on the side. Ideally, the temperature inside the outer tube is lowered to room temperature to introduce or discharge the semiconductor wafer. However, in this case, in the conventional vertical diffusion device, there is a disadvantage that it takes a very long time to lower the temperature to room temperature, and a long time is required to increase the temperature in the next processing cycle.

As described above, since the conventional vertical diffusion device has a long rise and fall time of the temperature in the outer tube, the semiconductor wafer that can be processed per day using the vertical diffusion device is:
The limit was 1-2 cycles. In addition, the time required for one cycle of processing is long, and a certain temperature must be maintained during the introduction and discharge of the semiconductor wafer. Therefore, it is necessary to always supply power to the heater, and the power consumption is large. There is a problem that.

The present invention has been made in view of the above-mentioned problems in the conventional vertical diffusion device, and has a good heating efficiency of the outer tube, so that the outer tube can be heated to a high temperature in a short time, and a temperature decreasing speed is high. The object of the present invention is to provide a vertical heating device that can shorten the processing time of one cycle, and at the same time, can introduce and discharge a workpiece at normal temperature, and can also prolong the life of the heater and reduce power consumption. And

[0013]

According to the present invention, in order to achieve the above object, a vacuum space 3 is formed so as to surround the outer tube 9 and the outer tube 9 is formed in the vacuum space 3. Heaters 12 and 13 for heating from
Was provided. The vacuum space 3 forms a vacuum heat insulating part,
Heating of the outer tube 9 by the heaters 12 and 13 disposed therein can be efficiently performed. further,
A gas inlet 18 is connected to the vacuum space 3 so that a gas can be introduced into the vacuum space 3. At the time of cooling, a gas is introduced from the outside around the outer tube 9 so that the outer tube 9 can be directly forcibly cooled. .

The vertical heating device according to the present invention comprises a cylindrical inner tube 8 made of a chemically and thermally stable material which stands upright so as to surround a space for accommodating a heated object to be heated. And an outer tube 9 made of a chemically and thermally stable material that stands upright so as to surround the inner tube 8 and keeps the inside in an airtight space, and heats the inside of the outer tube 9 and the inner tube 8. It has heaters 12 and 13. The vacuum space 3 is formed so as to surround the outer tube 9, and heaters 12 and 13 are provided in the vacuum space 3 so as to surround the outer tube 9.

In such a vertical heating device, the outer tube 9 is surrounded by the vacuum space 3 serving as a vacuum heat insulating layer, so that high heat insulating properties can be obtained. When the outer tube 9 is heated from the surroundings by the first and second heaters 12 and 13 arranged in the vacuum space 3, the outer tube 9 can be efficiently heated. Thereby, it is possible to increase the temperature rising rate in the outer tube 9.

Since the heaters 12 and 13 generate heat in the vacuum space 3 during heating, oxidation of the heaters 12 and 13 at a high temperature does not occur, and the life of the heaters 12 and 13 can be extended. Rather, any of the heaters 12, 1
3 can be selected, for example, a graphite heater can be used.

Further, a gas inlet 18 is provided in the vacuum space 3.
To stop the heat generation of the heaters 12 and 13 and cool the outer tube 9 when the vacuum space 3
, The outer tube 9 can be forcibly cooled directly from its surroundings. Thereby, the temperature decreasing rate in the outer tube 9 after the heat treatment can be increased, and the temperature in the outer tube 9 can be returned to room temperature in a short time.

[0018] The heater 12 comprises a first heater 1 disposed in I surround the outer tube 9 in a cylindrical shape
2 and a second heater 13 arranged to face the upper surface of the outer tube 9. The first heater 12 that cylindrically surrounds the outer tube 9 functions as a main heater that heats the outer tube 9.
The second heater 13 arranged to face the upper surface of the outer tube 9 changes the temperature distribution in the vertical direction inside the outer tube 9 or the inner tube 8 by adjusting the output or not to generate heat or not. Can be.

The first heater 12 surrounding the outer peripheral surface of the outer tube 9 has a plurality of long plate-shaped U-shaped heater members 31 arranged in a circumferential direction and sequentially arranged in a closed circle. They are connected in series to constitute a cylindrical heater 12. By doing so, the heater member 31 formed of the graphite heater molded body can be connected in a closed circle. And, this heater member 31
By providing the electrodes 36 at three positions apart from each other in the connection circuit for connecting the three-phase power supply, a triangular three-phase connection heater can be formed.
2 can be supplied with power. This first he
In particular, a graphite heater may be used as the heater 12.
Can be.

In a cylindrical surface heating heater such as the cylindrical first heater 12, uniform temperature uniformity with a temperature variation in the circumferential direction of ± 0.3 ° C. or less can be obtained. Then, in order to obtain the heater member 31 having high electric resistance due to surface heat generation, the heater member 31 must be extremely thin. In this regard, by arranging the heater member 31 in a cylindrical shape so as to be suspended from top to bottom, even a very thin heater member 31 can be easily arranged in a cylindrical shape.

In the structure of the first heater 12, the electric resistance can be partially adjusted by trimming a part of the heater members 31, 31. In other words, in the trimmed portions of the heater members 31, 31, the area of the cross section orthogonal to the flow of electricity is smaller than that of the untrimmed portion,
The resistance increases, and the calorific value increases.

In particular, when a graphite heater is used as the second heater 13 disposed so as to face the upper surface of the outer tube 9, if the graphite heater is used, it is alternately arranged in the circumferential direction from the inner circumference and the outer circumference of the donut disk-shaped heater member 51. The heater 1 which has slits 53 and 54 radially inserted in
It is better to set it to 3. By doing so, the heater member 51 which is a molded body of the graphite heater can be connected in a closed circle shape. And this heater member 5
By providing the electrodes 56 at three positions separated from each other, a triangle-shaped three-phase connection heater can be formed, and electric power can be supplied to the heater 13 from an inexpensive commercial three-phase power supply.

In such a structure of the heater 13, the electric resistance of the heater 13 can be adjusted by reducing its cross section from the inner circumference to the outer circumference.
That is, when the heater 13 is formed by alternately radiating the slits 53 and 54 in the circumferential direction from the inner circumference and the outer circumference of the disk-shaped heater member 51, the outer circumference side is compared with the inner circumference side of the heater member 51. The width between the slits 53 and 54 increases.
By reducing the thickness of the outer peripheral side from the inner peripheral side of the heater member 51 by that amount, the area of the cross section orthogonal to the current flow between the inner peripheral side and the outer peripheral side of the heater member 51 is adjusted substantially uniformly, Variations in the amount of heat generated can be eliminated.

[0024]

Embodiments of the present invention will now be described specifically and in detail with reference to the drawings.
FIG. 1 shows an entire vertical heating apparatus according to the present invention, in which a rack-shaped boat 27 is loaded with a heating object 28 which is a disc-shaped semiconductor wafer, and the heating object 28 is vertically spaced. This is an example in which a vertical heating device is applied to a vertical diffusion device that performs a thermal CVD process in a state where the devices are arranged and held.

The boat 27 is attached to an elevator 23 attached to the base plate 1 made of a disc-shaped heat-resistant member, and is moved up and down above the base plate 1. Base plate 1
A cylindrical inner tube 8 stands upright, and the inner tube 8 surrounds a heated object 28 mounted on the boat 27 from the periphery. This inner tube 8
It is formed of a chemically and thermally stable material such as a silicon carbide sintered body impregnated with quartz or metallic silicon. Numerous through holes are formed in the peripheral wall of the inner tube 8, and the upper end of the inner tube 8 is open.

The base plate 1 is air-tightly joined to a joint 2 made of a ring-shaped heat-resistant member at the outer peripheral portion of the upper surface.
The lower end of the lower peripheral wall 5 of the cylindrical vacuum vessel 4 is hermetically joined to the joint 2. That is, the lower end of the lower peripheral wall 5 of the vacuum vessel 4 is closed by the base plate 1 which is hermetically attached via the joint 2.

The vacuum vessel 4 has a lower peripheral wall 5 and an upper peripheral wall 6. The cylindrical lower peripheral wall 5 and the upper peripheral wall 6 are hermetically joined via a flange joint 7 to form a cylindrical peripheral wall as a whole. Is configured. Further, the vacuum container 4 has a disk-shaped lid 16, and the lid 16 is attached to the upper peripheral wall 6.
Close the upper end of the airtight. The vacuum vessel 4 is configured as an airtight pressure vessel by the lower peripheral wall 5 and the upper peripheral wall 6, the base plate 1 closing the lower end thereof, and the lid 16 closing the upper end.

A cooling pipe 20 is attached to the outer surface of the vacuum vessel 4, and the vacuum vessel 4 is cooled by water and other cooling liquid flowing through the cooling pipe 20. A vacuum valve 22 is provided on the lower peripheral wall 5 of the vacuum vessel 4.
The vacuum pump 21 is connected via the. Further, a gas inlet 18 is connected to the lid 16 of the vacuum vessel 4, and the gas inlet 18 is connected to a gas supply source (not shown) via a mass flow controller 19.

The inner surface of the vacuum vessel 4, specifically, the vacuum vessel 4
A heat insulating material 10 such as graphite is inserted inside the lower peripheral wall 5, the upper peripheral wall 6, and the lid 16. This insulation 1
0 can be replaced by a reflecting member that reflects infrared rays inside the vacuum vessel 4, or a reflecting surface may be formed on the inner surface of the heat insulating material 10.

A lower end of the lower peripheral wall 5 of the vacuum vessel 4 has a flange projecting inward, and between the flange and the flange projecting inward of the joint 2 projects outward from the lower end of the outer tube 9. The flange is hermetically clamped, whereby the outer tube 9 stands upright inside the vacuum vessel 4. Further, the base plate 1 and the joint 2 have a water channel (not shown), and are cooled by the flowing water.
The outer tube 9 is made of a chemically and thermally stable material such as a sintered silicon carbide body impregnated with quartz or metallic silicon, like the inner tube 8.

The outer tube 9 has a cylindrical shape with the upper end closed, and the lower end flange is airtightly sandwiched between the lower peripheral wall 5 of the vacuum vessel 4 and the joint 2. The inner tube 8 is airtightly surrounded around the inner tube 8 to form an airtight space inside.
The outside of the outer tube 9 forms an air-tight space 3 together with the vacuum container 4.
Is operated to remove gas molecules from the space 3, so that the vacuum space 3 can be formed between the outer tube 9 and the vacuum container 4. The vacuum space 3 surrounds the outer tube 9 around and around the upper surface.

Inside the heat insulating material 10 in the vacuum space 3,
Heaters 12 and 13 are arranged around the outer tube 9. A cylindrical first heater 12 is arranged around the outer tube 9.
Numeral 2 surrounds the outer tube 9 in a cylindrical shape. As will be described later, the three terminals 26 of the first heater 12 are taken out of the vacuum vessel 4 in an insulated state and connected to a power supply.

Also, on the upper end surface of the outer tube 9,
The disk-shaped second heater 13 is opposed. As will be described later, the three terminals 56 of the second heater 13 are taken out of the vacuum vessel 4 in an insulated state and connected to a power supply. The base plate 1 has a reaction gas inlet 24 for introducing a reaction gas into a space between the inner tube 8 and the outer tube 9 and a reaction gas outlet 25 for discharging a reaction gas from a space inside the inner tube 8. Are provided.

FIG. 2 shows an example of the cylindrical first heater 12 surrounding the outer tube 9. The first heater 12 includes a long plate-shaped heater member 31, a connection block 32 for connecting the upper end of the heater member 31, a fixing ring 33 for radially fixing the connection block 32, and a part thereof. And a rod-shaped terminal 36 attached to the connection block 32. In the illustrated example, the heater member 31
And 12 connection blocks 32 each, and a terminal 36
Are used. The numbers of the heater members 31 and the connection blocks 32 can be set arbitrarily according to the size of the diameter of the heater 12 as a whole.

The fixing ring 33 is made of Al ₂ O ₃ , BN, Si
₃ is N ₄ as such a ring-shaped comprising a heat-resistant insulating ceramic. Screws 3 made of graphite, ceramic, etc.
5, the twelve connection blocks 32 are radially fixed at equal angular intervals on the outer peripheral side of the fixing ring 33, and have screw holes for this.

The connection blocks 32 are made of graphite of the same material as a heater member 31 described later. As shown in FIG. 3, each connection block 32 has a pentagonal planar shape. Its width is slightly smaller than the width obtained by dividing the circle into twelve equal parts. The upper surface on the proximal end side of the connection block 32 is one step lower, and a screw hole 40 is provided therein.
Further, the two end surfaces intersect at an angle of 150 °, and a screw hole 39 is provided in the two end surfaces.

At least three of the connection blocks 32 include:
An electrode 3 is placed on the upper surface on the tip side, which is one step higher than the base end.
A screw hole 38 for fixing the lower end of 6 is provided. As shown in FIG. 2, at least three connection blocks 32 have electrodes 36 instead of the screw holes 38.
A through hole 46 having a larger diameter is provided.

As shown in FIG. 2 and FIG.
1 is a long graphite plate having a slit 42 in the center. That is, the heater member 31
It is a long plate-like graphite plate in which a slit 42 is formed from the upper end to the vicinity of the lower end, and is connected in a substantially U-shape. At its upper end, a through hole 41 for passing a screw is provided.

As shown in FIG. 2, the connection block 32
It is arranged at equal angular intervals on the outer peripheral side of the fixing ring 33, and in this state, the base end side where the upper surface of the connection block 32 is lowered by one step is fixed by a graphite screw 35 inserted through a screw hole of the fixing ring 33. The screw 35 is screwed into the screw hole 40 of the connection block 32 shown in FIG. In this state, the connection blocks 32 are radially arranged on the outer circumference of the fixing ring 33 with a space therebetween in the circumferential direction.

It should be noted that every third connection block 32 having a screw hole 38 for mounting the electrode 36 is arranged. Then, the screw 37 at the lower end of the electrode 36 is screwed into the screw hole 38 of the connection block 32 to fix the electrode 36. Further, every third connection block 32 having the through hole 46 is also arranged, and one connection block 32 is arranged between the connection block 32 having the screw hole 38 and the connection block 32 having the through hole 46. .

The upper end of the heater member 31 is fixed to the distal end surface of the connection block 32, and the adjacent heater members 31 are sequentially connected via the connection block 32. That is, the pair of upper ends on both sides of the slit 42 of the heater member 31 are brought into contact with the distal end surface of the adjacent connection block 32, and the heater member 31
A screw 34 is passed through a through hole 41 (see FIG. 3) at the upper end of the connection block 32, and this is screwed into a screw hole 39 (see FIG. 3) on the distal end surface of the connection block 32.
And tighten it. In this manner, the pair of upper ends of the twelve heater members 31 are fixed to the distal end surfaces of the adjacent connection blocks 32, respectively. The heater members 31 are arranged in a cylindrical shape, and the heater members 31 are connected to the connection block 32. Are connected in series in a closed loop.

The heater 12 assembled as described above
Is inserted between the vacuum container 4 and the outer tube 9 as shown in FIG. The electrode 36 is hermetically pulled out of the lid 26 of the vacuum vessel 4 to the outside of the vacuum vessel 4 via an insulating member, and is connected to a power supply. By providing the electrodes 36 on the three connection members 32 separated from each other, a power supply is connected via the three electrodes 36 provided on the heater member 31 connected in a closed loop. This makes it possible to configure a triangular three-phase connection heater, and to supply power to the heater from a three-phase power supply.

FIG. 4 shows an example of the heater member 31 used in the heater 12 as described above. FIG. 4 (a)
Is a heater member 31 described above with reference to FIGS. 1 and 2, and its cross-sectional shape is equal to the whole except for upper and lower ends.
Assuming that the heater member 31 in FIG. 4A is a standard one, FIGS. 4B to 4D show a trimming of the lower end of the heater member 31 to partially reduce the cross-sectional area.

In FIG. 4B, both sides of the lower end of the heater member 31 are trimmed to form notches 43, thereby partially reducing the cross-sectional area of the lower end of the heater member 31. In FIG. 4C, holes 44 are provided on both sides on the lower end side of the heater member 31, thereby partially reducing the cross-sectional area on the lower end side of the heater member 31. Further, in FIG. 4D, the lower end side of the heater member 31 is trimmed in the thickness direction to provide the deleted portion 45, thereby partially reducing the cross-sectional area of the lower end side of the heater member 31. In any case, since the cross-sectional area of the lower end of the heater member 31 is partially reduced, the current density per unit area is increased by that amount, the electric resistance is increased, and the amount of heat generated at the lower end of the heater member 31 is increased. Can be increased.

FIGS. 5 and 6 show the second heater 13 facing the upper surface of the outer tube 9. As shown in these figures, the second heater 13 includes a heater member 51 made of graphite.
Is a donut disk shape having a center hole 52 in the center. The heater member 51 has such a gradient that the portion around the center hole 52 is thick and becomes gradually thinner over the outer peripheral portion.

Slits 53 and 54 are formed radially alternately in the circumferential direction from the inner circumference and the outer circumference of the heater member 51, so that the heater member 51 is continuous to meander in the circumferential direction. . Thereby, the heater member 51 which is a graphite molded body can be connected in a closed circle shape. At three points 120 ° apart from each other on the outer peripheral portion of the heater member 51, a partially flat electrode mounting portion 55 is formed, and an electrode 56 made of rod-like graphite is erected there.

The electrode 56 is connected to the first heater 1 described above.
The second connection block 32 is passed through the through hole 46 of the second connection block 32 in a non-contact manner, and is further hermetically pulled out of the lid 26 of the vacuum vessel 4 to the outside of the vacuum vessel 4 via an insulating member, and is connected to a power supply. The electrode 56 is connected to the heater member 5 connected in a closed loop.
Since the three heaters are provided at equal intervals at three locations, a triangle-shaped three-phase connection heater can be configured, and power can be supplied to the heater from a three-phase power supply.

With such a shape of the heater member 51, the slit 53 on the outer peripheral side as compared with the inner peripheral side of the heater member 51,
The width between 54 increases. By reducing the thickness of the outer peripheral side from the inner peripheral side of the heater member 51 by that amount, the area of the cross section orthogonal to the current flow between the inner peripheral side and the outer peripheral side of the heater member 51 is adjusted substantially uniformly, Variations in the amount of heat generated can be eliminated.

In the vertical heating device having such a structure, the first and second heaters 12 and
When the outer tube 9 is heated from around the outer tube 9 and the heating object 28 is heat-treated, the outer tube 9 is surrounded by the vacuum space 3 serving as a vacuum heat insulating layer, so that a high heat insulating property is obtained. Thereby, the heating of the outer tube 9 by the first and second heaters 12 and 13 can be performed efficiently, the temperature rising rate in the outer tube 9 is increased, and the uniformity of the temperature of the heated object in the circumferential direction is obtained. And heating can be performed.

Since the heaters 12 and 13 are arranged in the vacuum space 3, the heaters 12 and 13 are less likely to be disconnected at an early stage due to oxidation at a high temperature. Rather, any of the heaters 12, 1
3 can be selected, and the heaters 12 and 13 made of graphite as described above can be used.

Further, the heat treatment of the heating object 28 is completed,
When the heat generation of the heaters 12 and 13 is stopped, the inside of the outer tube 9 can be forcibly cooled from the surroundings by introducing gas into the vacuum space 3 from the gas inlet 18. Thereby, the outer tube 9 after the heat treatment is formed.
The inside temperature of the outer tube 9 can be returned to normal temperature in a short time.

As the cooling gas is exhausted by the vacuum pump 21, a cooling gas that is always cold is introduced. When the temperature in the vacuum space 3 is high, an inert gas such as a nitrogen gas or an argon gas is used as a cooling gas. If air is used as the cooling gas when the temperature in the vacuum space 3 drops to some extent, the oxidation of the vacuum vessel 4 and the heater 1
No burning of 2, 13 occurs.

FIG. 7 shows the results of a heating test performed using a vertical heating apparatus tester as shown in FIG. The elapsed time (minutes) of the heating is plotted on the horizontal axis, and the 6th of 1, 7, 27, 47, 67, and 87 stages of 100 semiconductor wafers as the heating object 28
The average temperature T (° C.) of the sheet is shown on the vertical axis.

The vacuum vessel 3 is made of Al and has a height of 12
04 mm and a diameter of 500 mm. Outer tube 9
Is made of SiC, the height is 970 mm and the diameter is 302 m
m. The first heater 12 is composed of 12 long graphite plate heater members 31 each having a height of 1002 mm, a width of 85.2 mm, a slit width of 8 mm, and a thickness of 5 mm.
A 60 mm cylindrical array was used. The second heater 13 is made of graphite and has an outer diameter of 300 mm and an inner diameter of 60 m.
m, the thickness at the center was 23 mm, and the thickness at the periphery was 5 mm.

As the heating object 28, 100 boats of 8-inch silicon wafers with a vertical pitch of 6.35 mm were loaded into the boat 27 in the inner tube 8 made of SiC having a height of 860 mm and a diameter of 266 mm. 1 × 10 vacuum space 3
^{With the} pressure reduced to ⁻⁴ Pa, a three-phase alternating current of 380 to 390 A, a voltage of 75 V, and a power of 50 kW is applied only to the first heater 12, and the central portion and the upper silicon wafers of the boat 27 are each heated while heating. Were measured, and their average is shown in FIG.

As is apparent from FIG.
All of the 100 wafers reached 900 ° C. in a few minutes. FIG. 8 is a schematic comparison of a heating cycle of the vertical heating device according to the present invention and a conventional vertical heating device. The shaded portion indicates the heating power consumed in one heating cycle.

As shown in FIG. 8 (b), in the conventional vertical heating device, the outer tube is cooled to room temperature without cooling.
With the temperature kept at 00 to 500 ° C., the semiconductor wafer is charged into the outer tube, the inside is evacuated, and the entire apparatus is placed in a furnace. During this time, the heat retention power is required. At this time, the residual gas (main component water) in the outer tube
However, this causes an oxide film to be generated on the surface of the semiconductor wafer.

After the introduction of the semiconductor wafer, heating is started. However, since the rate of temperature rise is slow, it takes time to reach the processing temperature, and power consumed during that time is large. When the processing is completed and the inside of the outer tube is cooled, the outer surface of the heating furnace is water-cooled, but since the outer tube is not directly forcibly cooled, the temperature reduction rate inside is slow and the semiconductor wafer is discharged. It takes time to reach.

Further, when the semiconductor wafer is discharged, the discharge is performed while keeping the temperature at 300 to 500 ° C., as in the introduction, and therefore, a heat retaining power is required during the discharge. In addition, at this time, the reactive gas in the outer tube is stopped, the entire furnace is discharged while maintaining a vacuum, but the semiconductor wafer disposed on the upper end side of the boat is exposed to the residual gas at a high temperature for a long time, An oxide film is more likely to be generated on the surface of the semiconductor wafer after processing, and a difference in thickness between upper and lower wafers occurs due to a reaction with the residual gas.

As described above, it is ideal to lower the temperature in the outer tube to room temperature to introduce and discharge the semiconductor wafer. However, in the case of the conventional vertical heating apparatus, it takes a very long time to lower the temperature to room temperature. However, the temperature rise in the next processing cycle also has the disadvantage of requiring a long time. For this reason, the introduction and discharge of the semiconductor wafer in a warmed state are inevitable. In addition, the overall time required for one cycle of heat treatment is increased, and power consumption is large.

On the other hand, in the vertical heating device according to the present invention, as shown in FIG. 8A, the semiconductor wafer is introduced into the inner tube in a state where the outer tube 9 is cooled to room temperature without being kept warm. be able to. Therefore, no heat retention power is required during this time. At this time, the semiconductor wafer to be introduced is not exposed to air or residual gas at a high temperature, and an oxide film is not generated on the surface of the semiconductor wafer, and no imbalance occurs in the film thickness.

After the introduction of the semiconductor wafer, heating is started. In the heat-insulating action of the vacuum space 3 and the heater 12 made of graphite, the temperature at the time of heating of the graphite is 2000 ° C.
Even if the temperature exceeds (actually 1000 to 1300 ° C.), there is no risk of disconnection, and heat is generated almost on the surface. Therefore, the heating rate is high and the temperature rise speed is fast. The power required is small. When the process is completed and the inside of the outer tube is cooled, the outer surface of the vacuum vessel 4 is water-cooled, and a cooling gas is introduced into the vacuum space 3 to directly forcibly cool the outer tube. It can be returned to room temperature in a short time.

Further, even when the semiconductor wafer is discharged, the outer tube 9 is discharged without keeping the temperature in the same manner as when the semiconductor wafer is introduced, so that no heat-retaining power is required. Further, the processed semiconductor wafer is not exposed to a high temperature by air or residual gas, and it is not necessary to keep the outer tube in a vacuum when leaving the furnace. No oxide film or non-uniformity occurs on the surface of the processed semiconductor wafer.

FIG. 9 shows the result of measuring the temperature distribution on the central axis of the first heater 12 during heating in the above-described vertical heating apparatus tester. The loading pitch of 6.35mm,
The temperature measurement position is represented by the position of the semiconductor wafer (the number of stages of the boat). The first row is the top.

The lowermost position of the region to be located at the predetermined temperature (the lowermost position of the target soaking) is the uppermost 80th stage, and the heating temperature of the heaters 12 and 13 is adjusted at the uppermost position (upper surface temperature control position). And a substantially middle position (side temperature control position = 48 steps) of the lowermost position of the target soaking.

The white marks indicate the results of heating by supplying power to both the first and second heaters 12 and 13, and the black marks indicate the power supply to only the first heater 12 on the side surface (peripheral surface). This is the result of heat generation. In each case, a total of 3 kW / hour, 4.2
The measurement results are shown when power of kW, 5.4 kW, and 6.5 kW is supplied, 10 minutes or more have elapsed since the start of heating, and the temperature has reached a steady state.

FIG. 10 also shows that 7 kW of electric power is supplied only to the first heater
The temperature measurement result when 0 minute or more has passed and the temperature has reached a steady state is shown. This graph shows the temperature on the vertical axis as enlarged as compared to FIG. As shown in FIGS. 9 and 10, when looking at the temperature distribution up to 100 stages, when only the first heater 12 is heated, the temperature distribution on the vertical axis is y, and the wafer distribution on the horizontal axis is y. When the number of stages is 1 to 100, θ approximates a sine curve in the range of approximately 0 to 180 °. When both the first and second heaters 12 and 13 generate heat and the temperature is adjusted so that both heaters 12 and 13 reach 900 ° C., the temperature distribution on the vertical axis is represented by y and the horizontal axis is represented by y. When the number of wafer stages on the axis is 1 to 100, θ
Approximates a cosine curve in the range of about 0 to 180 °, and θ = 0 at the first stage.

As a result, the cylindrical first heater 12 and the disc-shaped second heater 13 are combined as described above,
By disposing the second heater 13 on the upper end side of the first heater 12 and turning on / off the supply of power to the second heater 13, the temperature distribution on the central axis of the first heater 12 can be reduced. , A sine curve and a cosine curve. Further, for example, by using a trimming means as shown in FIG.
The temperature distribution in the area where the heating object is heated can be made constant.

FIG. 11 shows a 5 mm
The end of the heater member 31 made of a thick graphite is 2 m.
m, and a cylindrical first heater 1 using a non-trimmed heater member 31 as shown in FIG.
2 is a graph comparing heating temperature distributions for Example No. 2 and No. 2;

The trimmed heater member 31 has a thickness of 5 mm from the top to a position corresponding to the 80th wafer, and the thickness of the heater member 31 corresponding to the 80th and subsequent wafers is 2 mm.
mm. In the case where the heater member 31 having a uniform thickness of 5 mm without trimming is used, the cosine curve θ = 0 is 5 mm, while the first wafer is
In the case of the heater member 31 trimmed to −2 mm, the cosine curve θ = 0 is a curve shifted to the 70th wafer. That is, uniform heating is achieved up to about the 70th sheet.

At this time, the trimmed heater member 31
However, even if the heater member 31 is not trimmed,
The power required to maintain 00 ° C. is 2 kW for the second heater 13 on the upper surface and 5 kW for the surrounding first heater 12, and the total is 7 kW. In other words, this means that the cosine curve is shifted because the electrical resistance of the trimmed portion increases and the calorific value of this portion increases. Therefore, by increasing the trimming ratio to 5: 2 or more, the position is shifted to the right and the cosine curve θ
The position of = 0 can be extended to 80 or more sheets.

Further, in the heating equilibrium state shown in FIG. 11, the temperature variation at the 12 temperature measurement points within the same wafer is ± 10% at all of the seventh to 67th stages of the wafer.
It has been settled at 0.3 ° C., indicating that the effects of the present invention are exhibited. This is an effect that the heating object is arranged on the central axis of the cylindrical surface heating element in which a plurality of plate-like graphite heater members 31 are arranged in a cylindrical shape.

[0073]

As described above, in the vertical heating device according to the present invention, by forming the vacuum space 3 having high heat insulation around the outer tube 9, the heater 12 arranged in the vacuum space 3, 13 is the outer tube 9
Can be efficiently heated. Thereby, it is possible to increase the temperature rising rate in the outer tube 9. In addition, since the heaters 12 and 13 during heating are in the vacuum space 3, oxidation of the heaters 12 and 13 does not occur, and the life of the heaters 12 and 13 can be extended. Moreover, arbitrary heaters 12 and 13 such as a graphite heater can be selected.

Further, a gas inlet 18 is provided in the vacuum space 3.
Is connected, gas can be introduced into the vacuum space 3 at the time of cooling, and the outer tube 9 can be forcibly cooled directly from the surroundings. Thereby, the temperature decreasing rate in the outer tube 9 after the heat treatment can be increased, and the temperature in the outer tube 9 can be returned to room temperature in a short time.
Therefore, the heated object is not exposed to air at a high temperature. For these reasons, according to the present invention, it is possible to obtain a vertical heating device that has a short heat treatment cycle, can be processed in a short time, is energy-saving, can perform high-quality processing, and has a long heater life. .

[Brief description of the drawings]

FIG. 1 is a schematic vertical sectional side view showing an example of a vertical heating device according to the present invention.

FIG. 2 is a perspective view showing an example of a cylindrical heater used in the vertical heating device.

FIG. 3 is an exploded perspective view showing some components of the cylindrical heater.

FIG. 4 is a perspective view showing each example of a plate-shaped heater member used in the cylindrical heater.

FIG. 5 is a plan view showing an example of a disk-shaped heater used in the vertical heating device.

FIG. 6 is a vertical sectional side view taken along line AA of FIG. 5;

FIG. 7 is a graph showing a relationship between a heating time and a heating temperature as a result of performing a heating test using an example of a vertical heating device according to the present invention.

FIG. 8 is a chart schematically comparing heating cycles of a vertical heating device according to the present invention and a conventional heating device.

FIG. 9 is a graph showing a relationship between a semiconductor wafer loading position and a temperature distribution as a result of performing a heating test using an example of a vertical heating apparatus according to the present invention.

FIG. 10 is a graph showing a relationship between a semiconductor wafer loading position and a temperature distribution as a result of performing a heating test using an example of a vertical heating apparatus according to the present invention.

FIG. 11 shows the results of a heating comparison test between a cylindrical heater using a trimmed heater member and a cylindrical heater using an untrimmed heater member in a vertical heating device according to the present invention. It is a graph which shows the relationship between a loading position and a temperature distribution.

[Explanation of symbols]

 Reference Signs List 3 vacuum space 8 inner tube 9 outer tube 12 first heater 13 second heater 18 gas inlet 31 heater member of first heater 36 electrode of first heater 51 heater member of second heater 53 heater member Slit 54 Slit of heater member 56 Electrode of second heater

Continuation of the front page (58) Field surveyed (Int.Cl. ⁷ , DB name) H01L 21/22 511 H01L 21/205 H01L 21/324

Claims (10)

(57) [Claims] 1. An inner tube (8) made of a chemically and thermally stable material having a cylindrical shape and standing upright so as to surround a space in which a heated object to be heated is housed, and the inner tube. (8) An outer tube (9) made of a chemically and thermally stable material that stands upright so as to surround the inside and keeps the inside in an airtight space, and the inside of the outer tube (9) and the inner tube (8). In a vertical heating device having heaters (12) and (13) for heating the outer tube, a vacuum space (3) is formed so as to surround the outer tube (9), and the outer space is formed in the vacuum space (3). The first tube (9) is arranged in a cylindrical shape around the tube (9) .
Heater (12) and the upper surface of the outer tube (9)
A vertical heating device comprising: a second heater (13) disposed to face the same. 2. The vertical heating device according to claim 1, further comprising a gas inlet (18) for introducing a gas from outside into the vacuum space (3). Wherein said heater (12), (13) a vertical heating apparatus according to claim 1 or 2, characterized in that it consists of graphite. 4. An outer peripheral surface of the outer tube (9)
The surrounding first heater (12) is connected to a long plate-shaped U-shape.
Multiple heater members (31) are arranged in the circumferential direction
Connected in series in a closed circle
The vertical type according to any one of claims 1 to 3,
Heating equipment. 5. The first heater (12) surrounding the outer peripheral surface of the outer tube (9) is three-phase connected by electrodes (36) provided at three positions separated from each other. The vertical heating device according to claim 4 . 6. A claim, characterized in that are parallelly arranged side by side in a circumferential direction in a state in which the heater member continuous with the long plate-like U-shaped (31) is suspended from the top 4
Or the vertical heating device according to 5. 7. The vertical heater according to claim 4 , wherein a part of the first heater member is trimmed to adjust a partial electric resistance. Mold heating device. 8. A second heater (13) arranged so as to face the upper surface of the outer tube (9) is radially alternately arranged in the circumferential direction from the inner circumference and the outer circumference of the disk-shaped heater member (51). The vertical heating device according to any one of claims 3 to 7 , wherein slits (53) and (54) are formed in the slit and are continuous in a ring shape. 9. A second heater (13) arranged to face the upper surface of the outer tube (9) is three-phase connected by electrodes (56) provided at three positions separated from each other. The vertical heating device according to claim 8, wherein: 10. The electric resistance of the second heater (13) arranged so as to face the upper surface of the outer tube (9) is reduced by reducing the cross section from the inner periphery to the outer periphery. 10. The method according to claim 8, wherein:
The vertical heating device according to 1.