JPH03116828A - Heat treatment device for semiconductor wafer - Google Patents

Abstract

PURPOSE:To make a short time clean heat treatment feasible without sucking any open air at all in case of wafer insertion by a method wherein resistance heaters are provided on the sidewall of a vertical cylindrical furnace while heating lamps are provided on the ceiling part. CONSTITUTION:Resistance heaters 2-1, 2-2 vertically divided into two sections are provided on the sidewall of a high temperature furnace 1 taking a vertical cylindrical shape. Besides, juxtaposed bar type heating lamps 6 and a ring type lamp 7 are provided on the ceiling part. The inside of the high temperature furnace 1 is heated by the resistance heaters 2-1, 2-2 e.g. at the high temperature of 1000 deg.C. An insertion jig 12 is shifted to the position beneath the high temperature furnace 1 while a wafer 8 is mounted on the jig 12 by a loading and unloading jig 15. The insertion jig 12 is shifted upward to contain the wafer 8 inside the high temperature furnace 1. Then, the wafer temperature is measured so that the heating level of the lamps 6, 7 may be controlled to let the wafer temperature rapidly approach to the heat treatment temperature. At this time, the resistance heaters 2-1, 2-2 are continuously heated while the inside of a reaction tube 4 is filled up with a processing gas at high temperature by buoyancy so that any open air may not enter into the reaction tube 4 at all.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a heat treatment apparatus for semiconductor wafers such as a diffusion apparatus and a vapor phase thin film forming apparatus (CVD apparatus), and particularly to a heat treatment apparatus for semiconductor wafers, such as a diffusion apparatus and a vapor phase thin film forming apparatus (CVD apparatus). The present invention relates to a device structure suitable for.

[Conventional technology]

As described in Japanese Patent Application Laid-Open No. 59-36927, in the conventional apparatus, concentric heating lamps are arranged on the ceiling of a cylindrical apparatus, and a wafer held horizontally is inserted from below into the apparatus, and each The wafer was heated while adjusting the lamp output.

Further, as described in Japanese Patent Application Laid-Open No. 194332/1983, heating lamps were provided above and below the wafer, and auxiliary heating lamps were further provided around the wafer to heat the wafer.

In addition, as described in Japanese Patent Application Laid-open No. 63-232422, resistance heating heaters are provided on the ceiling and side surfaces of the inner wall of a two-cylindrical high-temperature furnace, and a wafer is inserted from below into the high-temperature furnace to heat the wafer. was.

Further, as described in Japanese Patent Application Laid-Open No. 131430/1982, the temperature of a wafer being heated by a lamp was measured by an infrared sensor to control the amount of heat generated by the lamp.

[Problem to be solved by the invention]

Among the above-mentioned conventional techniques, the technology described in Japanese Patent Application Laid-open No. 59-36927 heats only the wafer and keeps the inner walls of the device and the processing gas at a low temperature, so when the wafer is inserted, the outside air containing dust accompanies the wafer. There was a problem in that the materials were brought inside the device. Furthermore, no consideration was given to uniformly heating a flat surface such as a wafer. In other words, since each filament is surrounded by a glass tube, it is not possible to line up the filaments at a distance that is less than the diameter of the glass tube, which causes non-uniform temperature distribution in glass tubes that do not generate heat. . As a result, there is a problem in that thermal stress defects occur in the wafer and variations in heat treatment occur.

Furthermore, the conventional technology described in JP-A-58-194332 is aimed at reducing the temperature distribution of the wafer, but if the optimum conditions for controlling the amount of heat generated by the auxiliary heating lamp are even slightly deviated, the temperature distribution on the wafer may be uneven. There was a problem in that thermal stress defects were generated at the wafer periphery.

In addition, the conventional technology described in JP-A No. 63-232422 uses only a resistance heater to heat the heater, and since the resistance heater is installed in the atmosphere, the wire diameter is relatively thick, so the heat capacity is large; It was not possible to control the amount rapidly over a very short period of time.

Even if continuous short-time heating treatment on the order of 1 second was performed using only a resistance heating heater, there was a problem in that the heater temperature would change with each number of treatments, and the heat treatment would vary from wafer to wafer.

Furthermore, the conventional technology described in JP-A No. 60-131430 does not take into consideration the fact that the emissivity of the wafer surface changes depending on the surface condition, and if the emissivity changes during heating, the temperature is indicated by an infrared sensor. There was a problem that the error in the values became large.

A first object of the present invention is to provide an apparatus structure that cleanly performs heat treatment for a short time without drawing in outside air when inserting a wafer.

The second object is to provide an apparatus structure that reduces the wafer temperature distribution during temperature rise and steady heating, and performs uniform heat treatment without generating thermal stress defects.

A third purpose is to provide a method for measuring wafer temperature with high accuracy regardless of the surface condition of the wafer.

[Means to solve the problem]

In order to achieve the above-mentioned first object, the heat treatment apparatus of the present invention is a vertical cylindrical apparatus with a resistance heater provided on the side wall and a heating lamp provided on the ceiling. Here, the resistance heating heater is a heater that uses an alloy material with a wire diameter of several 1 and generates Joule heat at atmospheric pressure.The heater temperature is 1500℃ or less to prevent the heater from burning out, but it has good thermal efficiency. A heater suitable for continuous heating. On the other hand, heating lamps are made by enclosing a tungsten wire filament with a wire diameter of several hundred micrometers in a glass tube, filling the glass tube with halogen gas as an inert gas, and passing an electric current through the filament for 30 minutes.
It is a heating source that generates heat in an incandescent state of about 00°C, and because the filament is thin, the amount of heat generated can be controlled at high speed. A resistance heating heater continuously generates heat to keep the inner walls of the apparatus and the processing gas at a high temperature at all times. The heating lamp controls the amount of heat generated in accordance with the wafer temperature to control the wafer temperature.

In order to achieve the second object, the heat treatment apparatus of the present invention is provided with an auxiliary heating lamp near the wafer periphery, and uses a condenser and a lens to give directionality to the heating light, so that the wafer periphery is heated. It is designed to locally heat a position slightly inside from the periphery without containing it.

In addition, the lamp tube structure is flat and circular.

The wafer is heated by having an annular shape, in which a filament is wired in a planar manner, and heating lamps having such a planar shape are arranged parallel to the wafer.

In order to achieve the third objective, we installed a light-emitting lamp with the same wavelength as the infrared sensor, and measured the intensity of the light from one light-emitting lamp reflected on the wafer surface using the infrared sensor, thereby calculating the wafer emissivity. The eighth step to be measured is to turn off the light emitting lamp, measure the radiation intensity from the wafer, and calculate the wafer temperature using the previously determined wafer emissivity.

[Effect]

To achieve the first purpose, a resistance heater installed on the side wall of a vertical cylindrical device continuously generates heat, and in order to keep the inner wall of the device and the processing gas at a high temperature, the bottom end of the device is open. The inside of the chamber is filled with high-temperature processing gas due to buoyancy.
When the wafer is inserted, the low-temperature outside air that accompanies the wafer is driven away by the high-temperature processing gas, and no outside air is brought into the apparatus. In addition, the heating lamp installed on the ceiling of the vertical cylindrical device quickly controls the amount of heat generated according to the temperature of the wafer, so it is possible to rapidly heat the wafer immediately after insertion to the heat treatment temperature. Furthermore, heating can be controlled so that the entire surface of the wafer has a uniform temperature, and short-time heat treatment on the order of seconds can be performed.

Directional heating light from an auxiliary lamp provided near the wafer edge to achieve the second purpose can locally heat the vicinity of the wafer edge without including the wafer edge. When raising the temperature of a low-temperature wafer to the heat treatment temperature, the temperature of the wafer periphery increases due to heating of both the wafer side surface and peripheral end surface.

Furthermore, the temperature of the central portion of the wafer is high because it faces the center of the heating source. Due to the effects of both, the temperature is lowest at a portion slightly inside from the wafer periphery.

Since the directional heating light locally heats the low-temperature portion, the wafer temperature distribution can be reduced.

Further, the planar heating lamp is capable of uniform heating in a plane, and the entire surface of the wafer disposed parallel to the lamp can be brought to a uniform temperature. In particular, the wafer temperature distribution during steady processing can be reduced.

A luminescent lamp and an infrared sensor to achieve the third objective make it possible to measure the radiation intensity from the wafer while measuring the emissivity of the wafer.

To convert the radiation intensity from the wafer to the wafer temperature,
It is necessary to provide the emissivity of the wafer, but since the emissivity of the wafer is measured online, even if the emissivity of the wafer changes during heating, the wafer temperature can be calculated with high accuracy. .

〔Example〕

An embodiment of the present invention will be described below with reference to FIGS. 1 and 2. FIG. 1 is a longitudinal sectional view of a diffusion device to which the present invention is applied, and FIG. 2 is a horizontal sectional view showing the arrangement of heating lamps. The high-temperature furnace 1 has a vertical cylindrical shape, and a resistance heater 2-1.2-2 (such as a Kanthal wire with a diameter of 2 to 10+ nn) divided into upper and lower halves is provided on the inner wall of the furnace. A soaking tube 3 (made of silicon carbide I) 1 a reaction tube 4 (made of quartz glass, etc.) is provided inside the heater 2-1.2-2, and a heat insulating material 5 is provided around it. . A rod-shaped heating lamp 6 and a ring-shaped lamp 7 are provided on the ceiling of the high-temperature furnace 1 in parallel.

A condenser 9 is provided so that the heating light from the ring-shaped lamp 7 is locally irradiated only near the peripheral edge of the wafer 8 . A reflector plate 10 is provided on the outside of the lamp 6.7, which is provided with channels 11 for cooling air. One wafer 8 is placed on the insertion jig 12 and placed in the high temperature furnace 1.
is inserted into the interior from below. The insertion jig 12 is the transport platform 1
3 and camp 14 when inserting the wafer.
is now closed. A loading/unloading jig 15 is provided for supplying and unloading wafers to the insertion jig 12. Below the high temperature furnace 1, there is a half mirror 16, an infrared sensor 17. A wafer temperature measurement system consisting of an infrared lamp 18 is provided. A process gas such as nitrogen, argon, oxygen, or water vapor flows inside the reaction tube 4 depending on the usage conditions of the diffusion device. A supply pipe 19 is attached to the side wall of the reaction tube 4 , and while gas introduced from the outside flows through the supply pipe 19 , it is preheated, reaches a high temperature, and is supplied to the upper part of the reaction tube 4 . In the lamp arrangement shown in FIG. 2, a large number of rod-shaped heating lamps 6 are arranged in parallel over the entire surface of the wafer 8, and the heat generating portion is only the portion facing the wafer 8 in the axial direction of the lamps. The ring-shaped lamp 7 is provided around the wafer 8 in an axially symmetrical manner. The power supply terminals 20 of both lamps are located away from high temperature areas and are sufficiently cooled.

As shown in Fig. 1, the heat generation control system includes a thermocouple 21 installed in the center of the heat generating part of the resistance heater 2-1. The amount of heat generated is PID controlled, and the power supplied from the power source 23 is adjusted. In addition, the indicated value of the infrared sensor 17 is the value indicated by the wafer thermometer 2.
At step 4, the amount of heat generated is subjected to PID control so as to approach the target temperature, and the power supplied from the power source 25 is adjusted. Setting target temperatures to the temperature controller 22 and wafer thermometer 24 is performed by signals from the raw controller 26.

The operation when performing sea urchin heat treatment using the diffusion device configured as described above will be described below. Resistance heating heater 2-1.
Due to the heat generation of 2-2, the inside of the high-temperature furnace 1 is heated to
Heater 2-, which is divided into two parts, is in a high temperature state of °C.
A uniform temperature field is formed in the upper part of the high temperature furnace 1 by controlling the calorific value of the lamps 1.2-2 and 6.7.

The insertion jig 12 is moved directly below the high temperature furnace 1, and the wafer is placed thereon by the load/unload jig 15. The insertion jig 12 moves upward (at a speed of 200 mm/sec, for example) and stores the wafer 8 inside the high temperature furnace 1 .

As will be explained later, the wafer temperature is measured by a wafer temperature measurement system, and the wafer temperature is determined to be the heat treatment temperature (for example, 100
The amount of heat generated by the heating lamp 6.7 is controlled so that the temperature quickly approaches 0°C. Further, as will be described in detail later, the amount of heat generated by the rod-shaped lamp 6 and the ring-shaped lamp 7 is controlled so that the wafer temperature is uniform during temperature rise and during steady state. A wafer inserted at room temperature reaches the heat treatment temperature in about 10 seconds, for example, and then the heat treatment temperature is maintained at a constant value.

After heat treatment for a predetermined time (for example, 10 seconds), the wafer is taken out directly below the high temperature furnace 1, and replaced with the next wafer by the loading/unloading jig 15, and the above operations continue.

The resistance heating heater 2-1.2-2 continuously generates heat, and the inside of the reaction tube 4 is filled with high-temperature processing gas due to buoyancy, so outside air enters the inside of the reaction tube 4. Never.

Regarding the in-plane temperature distribution of the wafer, the central portion of the wafer is close to the rod-shaped lamp 6 and therefore has a high temperature. This is because there are areas around the top wall of the device where there are no lamps or heaters.

The temperature near the periphery of the wafer is low. On the other hand, the outermost portion of the wafer becomes hot again due to the heating of the peripheral end surface. FIG. 3 shows the results of calculating the temperature distribution in the radial direction of the wafer by numerical simulation.

A in FIG. 3 is measured when only the rod-shaped lamp 6 is used.

FIG. 3B shows a case where the ring-shaped lamp 7 locally heats a portion slightly inside the wafer periphery, including the wafer periphery. In this case, it can be seen that the maximum and minimum temperature difference is reduced. this is.

Since the ring-shaped lamp 7 is provided with a condenser 9, the heating light has directionality, and it is possible to locally heat the wafer near the periphery without including the wafer periphery, which reduces the temperature difference. be. Temperature distribution can be further reduced by optimizing the local heating area.

A case in which the condenser 9 is eliminated and the entire wafer is heated from the ring lamp 7 is shown in C of Fig. 3. In this case, the amount of heating to the wafer peripheral edge surface also increases, and the temperature at the outermost wafer becomes extremely high. Next, wafer temperature measurement, where the temperature difference becomes large, will be explained. In order to measure the wafer temperature using the infrared sensor 17, it is necessary to provide the emissivity of the wafer surface. However, the wafer's emissivity changes with changes in oxide film thickness.

Changes in surface conditions during heat treatment cause measurement errors.

Since a wafer heated to 600° C. or higher is opaque, there is a relationship in which the sum of the reflectance and emissivity of the wafer is 1.0. The reflectance of the wafer is determined by lighting the infrared lamp 18 and measuring the intensity of the light reflected by the half mirror 16, reflected by the wafer 8, transmitted through the half mirror 1G, and reaching the infrared sensor 17. , and then the emissivity can be calculated.

Next, the infrared lamp 18 is turned off, the radiant energy from the wafer 8 is measured by the infrared sensor 17, and the wafer temperature can be determined by giving the previously determined emissivity.

By alternately performing emissivity measurement and temperature measurement, the wafer temperature can be determined with high accuracy even if the wafer surface condition is elementary.

The heat treatment method in the above embodiment is a resistance heating heater 2-1.2.
-2, the temperature inside the high-temperature furnace 1 is set to the heat treatment temperature (for example, 1000° C.), and after the wafer is inserted, the heating lamp 6 is made to generate heat so that the wafer temperature quickly approaches the heat treatment temperature. In this case, the advantage is that the throughput is large.

As another heat treatment method, the temperature inside the high temperature furnace 1 is set to a temperature slightly lower than the heat treatment temperature (for example, 800°C), and after the wafer temperature after insertion reaches the internal temperature of the high temperature furnace 1,
There is also a method of causing the heat lamp 6 to generate heat to bring it closer to the heat treatment temperature. In this case, this corresponds to preheating the wafer, and the in-plane temperature distribution of the wafer can be reduced when the temperature rises, so that it is possible to prevent the occurrence of thermal stress defects even without providing the ring-shaped lamp 7.

As another heat treatment method, by slowing down the speed at which the wafer 8 is inserted into the high-temperature furnace 1, the temperature of the wafer can be slowly raised, so the temperature distribution within the wafer surface when the temperature rises can be reduced, and the ring This has the effect of preventing the occurrence of thermal stress defects even without providing the shaped lamp 7.

A vertical cross-sectional view of a diffusion device according to another embodiment of the present invention is shown in FIG. 5. A cross-sectional view showing the horizontal arrangement of the heating lamps is shown in FIG. Rod-shaped heating lamps 6 are provided on the ceiling of the cylindrical high-temperature furnace 1 in two rows arranged orthogonally in parallel. The lower part of the high temperature furnace 1 is open. The optical axis of the wafer temperature measurement system is bent at right angles by a mirror 27. A ring plate (made of quartz glass, silicon, etc.) is placed on the outer periphery of the wafer 8.
28 are provided. A bottom view of the wafer 8 and the ring plate 28 is shown in FIG. Wafer 8 and ring plate 28
is supported by a claw 29 at the tip of the insertion jig 12.

The thickness of the ring plate 28 is greater than the thickness of the wafer.

According to this embodiment, there is a corresponding effect when the diameter of the wafer is apparently increased by the ring plate 28. Although local heating near the wafer periphery is not performed, this corresponds to heat treatment using the uniform temperature range at the center in the curve shown in FIG. 3C, so that uniform heat treatment can be performed. High temperature furnace 1
Since the lower part of the cap is open, the amount of heat dissipated is large and the power consumption is large compared to the first embodiment, but uniform heating is possible without causing temperature fluctuation inside the device due to opening and closing of the cap.

Furthermore, since the wafer temperature measurement system is provided at a location where it is not exposed to the radiant heat of the high temperature furnace 1, the temperature of the measuring instrument itself will not rise.

Further, if a heating heater or a cooling gas flow path is attached to the ring plate 28 and the temperature of the ring plate is controlled, the effect of making the wafer temperature uniform is large.

A longitudinal sectional view of a diffusion device according to another embodiment of the present invention is shown in FIG. A spherical lamp 30 is provided at the center of the ceiling of the cylindrical high temperature furnace 1. A filter 31 (made of quartz glass or the like) is provided between the lamp 30 and the wafer 8, and a convex lens 32 is formed in a ring shape, and the rest is a scattering surface.

According to this embodiment, only one spherical lamp 30 is used, and the light is scattered by the filter 31, so that the entire surface of the wafer can be heated uniformly and axially symmetrically. In addition, the convex lens 32 allows
The vicinity of the periphery of the wafer can be locally heated, and the wafer temperature can be made uniform.

A longitudinal sectional view of a diffusion device according to another embodiment of the present invention is shown in FIG. A horizontal sectional view showing the arrangement of the lamps is shown in FIG. Bar-shaped heating lamps 6 are provided in parallel below the horizontally supported wafer 8, and ring-shaped lamps 7 are provided above. A condenser 9 is provided so that the heating light from the ring-shaped lamp 7 is locally irradiated only near the peripheral edge of the wafer 8 . The wafer 8 is placed in a reaction tube 4 with an insertion port on the side.
(made of quartz glass, etc.) using an insertion jig 12, and the insertion opening is sealed with a cap 14.

A processing gas is supplied into the reaction tube 4 from a supply pipe 19 .

Half mirror 16, infrared sensor 17. Infrared lamp 18
A wafer temperature measurement system is provided.

This embodiment has the same effects as the first embodiment in terms of wafer uniform heat treatment and improved wafer temperature measurement accuracy.

Another embodiment of the wafer temperature measurement system of the present invention is shown in FIG. Two infrared sensors 17-1 and 17-2 of the same type and an infrared lamp 18 are used. The light from the infrared lamp 18 is reflected by the wafer 8 along the optical path indicated by the broken line, and is reflected by the infrared sensor 1.
By measuring the intensity that reaches 7-1, the reflectance of the wafer can be determined and the emissivity can be calculated. on the other hand,
The radiant energy from the wafer 8 follows the optical path indicated by the dashed line.

By measuring the intensity reaching the infrared sensor 17-2, the wafer temperature can be determined. Note that it is necessary to make the reflectance measurement position and the temperature measurement position the same. According to this embodiment, reflectance measurement and temperature measurement can be performed simultaneously.

A longitudinal cross-sectional view of a diffusion device according to another embodiment of the present invention is shown in FIG. Bar-shaped heating lamps 6 are provided in parallel above and below a wafer 8 that is supported horizontally. Half mirror 1 at the bottom of the device
6. Infrared sensor 17. Infrared lamp 18. mirror 33
．． A wafer temperature measurement system including a shutter 34 is provided.

Wafer temperature measurement is performed in three steps.

First, the shutter 34 is opened, the infrared lamp 18 is turned on, and the infrared sensor 17 measures the intensity. When this is expressed as El, this is the intensity of the light from the infrared lamp 18 that passes through the half mirror 16, is reflected by the mirror 33, is reflected by the half mirror 16, and reaches the infrared sensor 17. Next, close the shutter 34.

The infrared lamp 18 is turned on and the intensity is measured by the infrared sensor 17. When this is set as El, this is an infrared lamp 18
The light is reflected by half mirror 16.

This is the intensity of light that is reflected by the wafer 8, transmitted through the half mirror 16, and reaches the infrared sensor 17. Next, the shutter 34
, turn off the infrared lamp 18, and turn off the infrared sensor 1.
Measure the strength with 7. When this is E3, this is wafer 8
This is the intensity of the radiant energy transmitted through the half mirror 16 and reaching the infrared sensor 17. Using the above measurement values, when the wafer is opaque at 600° C. or higher, the emissivity ε of the wafer is calculated by the following formula.

Et Ex If the wafer temperature is T, the infrared sensor has the following characteristics. In other words, it becomes .

Here, 01 to C6 are constants that are calibrated and determined in advance. Therefore, even if the emissivity of the wafer changes during heating, it is possible to accurately determine the wafer temperature T using the above measured values. can. In this embodiment, the infrared lamp 1
Even if the intensity of 8 changes over time, the wafer temperature can be determined with high accuracy.

This embodiment is highly effective in improving the accuracy of wafer temperature measurement.

A vertical cross-sectional view of a diffuser according to another embodiment of the present invention is shown in FIG. 13, and a cross-sectional view showing the horizontal arrangement of lamps is shown in FIG.
As shown in the figure. Bar-shaped heating lamps 6 are arranged in parallel above the horizontally supported wafer 8.

A large number of small spherical heating lamps 35 are arranged below. Each of the spherical heating lamps 35 is provided with a condenser 9, so that the wafer 8 is locally irradiated.

In this embodiment, since the amount of heating can be locally controlled over the entire surface of the wafer using the spherical heating lamp 35, it is highly effective in making the wafer temperature uniform.

A longitudinal cross-sectional view of a diffusion device according to another embodiment of the present invention is shown in FIG. The cross-sectional view showing the horizontal arrangement of the lamp is shown in the 14th
As shown in the figure, rod-shaped heating lamps 6 are arranged in parallel above and below a wafer 8 that is supported horizontally.

The directions of the upper and lower heating lamps 6 are orthogonal. moreover,
Another rod-shaped heating lamp group 36 is provided at both ends of the heating lamp 6 in a direction perpendicular to the heating lamp 6 . A ring plate 28 is provided around the wafer 8. In addition to the wafer temperature measurement system using the infrared sensor 17, a plurality of thermocouples 37-1.37-2.3 are installed in the wafer insertion space.
7-3 is provided. Each thermocouple corresponds to the center and four peripheral parts of the wafer 8. The heating lamp 6 and the heating lamp 3 are heated so that the temperature of each thermocouple becomes uniform.
Adjust the amount of heat generated in step 6.

According to this embodiment, the thermocouple 37-1.37-2°37-
3 is used to adjust the heat generation amount of each of the many heating lamps 6.36 to make the temperature of the wafer insertion space uniform, and the infrared sensor 17 is used to measure the wafer center temperature to make the temperature uniform. I can do it.

Another embodiment of the present invention will be described with reference to FIGS. 16 to 18. FIG. 17 is a longitudinal sectional view of a diffusion device to which the present invention is applied. FIG. 16 is a cross-sectional view showing the lamp structure used above the device. FIG. 18 is a perspective view showing the lamp structure used below the device. As shown in FIG. 16, the heating lamp 38 has a filament 40 (such as a tungsten wire) spirally provided in a flat circular glass tube 39 (made of quartz glass, etc.), and a terminal portion 41 is connected to a molybdenum foil. The electrodes are sealed in glass. Gases such as argon, nitrogen, krypton, iodine, bromine, and chlorine are sealed inside the sealed glass tube 39.

Note that a support member (not shown) is provided as necessary to prevent the filament 40 from touching the glass tube 39.

As shown in FIG. 17, the above heating lamp 38 is provided above the wafer 8. Below the wafer 8, a first
As shown in FIG. 8, a flat annular heating lamp 42 is provided. A filament 44 is spirally provided in a flat annular glass tube 43. The above gas is sealed inside the glass tube 43. In FIG. 17, a reflection plate 10 (made of aluminum or the like) is provided outside the heating lamp 38, 42, and it includes a cooling air flow path 11.
is provided. A reactor 4 (made of quartz glass or the like) having an insertion opening on the side is provided inside the lamp 38, 42, into which a wafer 8 placed on an insertion jig 12 is inserted. The insertion port is sealed with a cap 14. A processing gas (nitrogen, oxygen, hydrogen, water vapor, etc.) is supplied to the inside of the reaction tube 4 from a supply pipe 19 . A radiation thermometer 45 using an infrared sensor is provided. A temperature controller 46 is provided which inputs the signal from the radiation thermometer 45 to control the amount of heat generated by the heating lamps 38 and 42.

The operation of heat-treating a wafer using the lamp heat-treating apparatus configured as described above will be described below.

An insertion jig 12 carrying a wafer outside the apparatus inserts the wafer 8 into one reaction tube 4 . Reaction tube 4 with cap 14
After sealing, the inside is evacuated using a vacuum pump (not shown), and then processing gas is introduced from the supply pipe 19. The heating lamp 38° 42 is turned on, and the wafer 8 is heated to the heat treatment temperature (for example, 1000°C).The wafer temperature is measured with the radiation thermometer 45, and the wafer temperature is quickly raised to the heat treatment temperature without exceeding the heat treatment temperature. The amount of heat generated by the heating lamps 38, 42 is controlled by the temperature controller 46 so that it approaches . so that the center and periphery of the wafer 8 are at the same temperature.
The amount of heat generated by the upper circular heat lamp 38 and the lower annular heat lamp 42 is controlled. After the heat treatment for a predetermined period of time, the heating lamps 38° 42 stop generating heat and the wafer cools down.
By moving the insertion jig 12, the wafer is replaced and the above operation is repeated.

In the present invention, the heating lamps 38, 42 are circular or annular, concentric with the wafer 8, and the temperature distribution generated on the wafer 8 is small. Furthermore, since the glass tubes 39.43 of the heating lamps 38.42 are flat and the filaments 40.44 are densely arranged in a plane, the wafer can be heated uniformly and the temperature distribution generated on the wafer can be reduced. small.

FIG. 19 shows a cross-sectional view of a heating lamp of a lamp heat treatment apparatus according to another embodiment of the present invention. FIG. 20 shows a cross-sectional view taken along the line ■-■ in FIG. 19. Plate-shaped filaments 47 and 48 are provided in a flat circular glass tube 39, and are divided into two zones: a central filament 47 and a peripheral filament 48. Each filament 1 to terminal part 4
Electric power from 1! 49. A support component 50 is provided as necessary so that the filament 47.degree. 48 is in the center plane of the glass tube 39.

By providing the heating lamps of this embodiment above and below the wafer 8, both sides of the wafer can be equally heated, and furthermore, the amount of heat generated in the central and peripheral parts of the wafer can be controlled. Note that when used in the heating lamp of this embodiment, it is necessary to align the position of the radiation thermometer 45 with the gap 51 between the filament 47.

A cross-sectional view of a heating lamp according to another embodiment of the present invention is shown in FIG.
As shown in the figure. A large number of coiled linear filaments 53 are arranged in parallel at narrow pitches in a flat rectangular glass tube 52, and are wired from a large number of terminal parts 41 to electrodes 54 that connect all the filaments. There is. According to this embodiment, since the linear filaments 53 are provided at narrow pitches, the amount of heating in the plane can be made almost constant. The reason why a large number of terminal portions 41 are wired to the electrodes 54 is because there is a limit to the permissible current value per terminal, and the current value is to be increased.

22 is a cross-sectional view of a heating lamp according to another embodiment of the present invention.
As shown in the figure. The filament 53 is a square thin plate.

A cross-sectional view of a heating lamp according to another embodiment of the present invention is shown in FIG.
As shown in the figure. A linear filament 53 is folded in a meandering manner on a plane.

A cross-sectional view of a heating lamp according to another embodiment of the present invention is shown in Fig. 24.
As shown in the figure. A plurality of groups of coiled linear filaments 53 are independently provided in a flat rectangular glass tube 52. According to this embodiment, the amount of heat generated by a plurality of filament groups can be controlled independently, and the heat generation can be controlled so that the wafer temperature becomes uniform.

In addition to the case where the plurality of filament groups are all parallel to each other, the effect of heat generation control is even greater when the filament groups are crossed in two stages.

A perspective view of a heating lamp according to another embodiment of the present invention is shown in FIG. A plate-shaped filament 53 is provided in a circular glass tube 52. A plate-shaped filament 53 is heated in parallel to the wafer 8.

The above explanation is a fan-shaped circular, annular, square glass tube 39.
, 43 and 52 are transparent flat plates, but they may also be flat plates with convex lenses or scattering plates like the filter 31 in FIG. 7.

〔Effect of the invention〕

According to the present invention, no outside air is mixed into the apparatus when inserting the wafer, and heat treatment can be performed for a short time on the order of seconds in a clean gas that does not contain external dust, resulting in a high product yield. In addition, the wafer temperature distribution during temperature rise and steady heating is small, and thermal stress defects do not occur.
Heat treatment can be performed uniformly. In addition, since the wafer temperature is measured without measuring emissivity in response to changes in the surface condition of the wafer during heating, the wafer temperature can be determined with high accuracy, and the wafer temperature can be adjusted to approach the target heat treatment temperature. Uniform heat treatment can be performed by controlling the amount of heat generated by the heat source.

[Brief explanation of drawings]

Fig. 1 is a longitudinal cross-sectional view of a diffusion device according to an embodiment of the present invention;
The figure is a cross-sectional view showing the arrangement of the lamps.
5 and 5 are a cross-sectional view and a longitudinal sectional view of a diffusion device of another embodiment, FIG. 6 is an external view of a ring plate, and FIG. 7 is a longitudinal sectional view and a longitudinal sectional view of a diffusion device of another embodiment. Figures 8 and 9 are cross-sectional views and vertical cross-sectional views of a diffusion device of another embodiment, Figure 10 is a diagram showing a wafer temperature measurement system of another embodiment, and Figure 11 is a diagram showing a diffusion device of another embodiment. A vertical cross-sectional view of the device, and FIGS. 12 and 13 are a cross-sectional view and a vertical cross-sectional view of a diffusion device of another embodiment. Figures 14 and 15 are a cross-sectional view and a vertical cross-sectional view of a diffuser according to another embodiment, and Figures 16-17 are a cross-sectional view of a lamp structure of a diffuser according to another embodiment and a longitudinal cross-section of the device. 18 is a perspective view showing another lamp structure, FIG. 19 is a cross-sectional view of the lamp structure of another embodiment, and FIG.
(2) Cross-sectional view, FIGS. 21 to 24 are cross-sectional views of a lamp structure of another embodiment, and FIG. 25 is a perspective view of a lamp structure of another embodiment. DESCRIPTION OF SYMBOLS 1... High-temperature furnace, 2... Resistance heating heater, 6... Rod-shaped lamp, 7... Ring-shaped lamp, 8... Wafer,
9...Concentrator, 16...Half mirror 17...Infrared sensor, mind-reflection only/night Itoku t? 1st θ Figure 1 Figure 33--Mirror 34--Yatta 2nd Figure Body 3 Figure 5- Force 0 and runf 0 Un/4 Figure 5 Figure 37- #L electric pair 1g Figure q Figure 9 I---T I

Claims (1)

[Scope of Claims] 1. A semiconductor wafer heat treatment apparatus that heats semiconductor wafers by inserting and removing them one by one into a heating space, which has an insertion/extraction port below the heating space, and a resistor provided in the heating space. A heat treatment apparatus for semiconductor wafers, characterized in that the semiconductor wafers are simultaneously heated by a heat generating heater and a heating lamp. 2. The semiconductor wafer is supported in a horizontal position, and the heating space is formed in a vertical cylindrical shape. A resistance heater is installed on the side wall of the heating space, and a heating lamp is installed on the ceiling of the heating space. 2. The semiconductor wafer heat treatment apparatus according to claim 1, wherein the semiconductor wafer heat treatment apparatus is provided in a part of the semiconductor wafer heat treatment apparatus. 3. In a semiconductor wafer heat treatment device that heats semiconductor wafers by inserting and removing them one by one into a heating space,
A semiconductor characterized in that it has a heat source consisting of a heat lamp and a resistance heater for heating the entire surface of the semiconductor wafer, and also has a heat source that locally heats a position slightly inside from the periphery of the semiconductor wafer. Wafer heat treatment equipment. 4. In a semiconductor wafer heat treatment apparatus in which semiconductor wafers are inserted one by one into a heating space and heat-treated, the heating space is composed of a heating lamp and a resistance heater, and the heating space is composed of a light emitting lamp and a radiant energy sensor. a wafer temperature measurement system, the radiant energy sensor measures the light emitted from the light emitting lamp and is reflected by the semiconductor wafer, and the radiant energy sensor measures radiant heat from the semiconductor wafer. A heat treatment apparatus for a semiconductor wafer, characterized in that the emissivity and temperature of the semiconductor wafer are simultaneously determined by calculation using the measured values of both. 5. A semiconductor wafer heat treatment apparatus that heats semiconductor wafers by inserting them one by one into a heating space formed by a group of heating lamps, which further includes a wafer temperature measurement system using a radiant energy sensor, and further includes a wafer temperature measurement system using a radiant energy sensor. has a thermocouple at each position corresponding to a plurality of regions in the plane of the semiconductor wafer, and controls the heat generation ratio of each lamp of the heating lamp group according to a ratio of indicated values of the plurality of thermocouples, and A heat processing apparatus for semiconductor wafers, characterized in that the amount of heat generated by all heating lamps is controlled according to the indicated value of a radiant energy sensor. 6. In a semiconductor wafer heat treatment apparatus that heats semiconductor wafers by inserting them one by one into a heating space formed by a group of heating lamps, a group of rod-shaped lamps in which the group of heating lamps is arranged along the surface of the semiconductor wafer. A semiconductor wafer heat treatment apparatus characterized in that another rod-shaped lamp is arranged perpendicularly to the group of rod-shaped lamps. 7. In a semiconductor wafer heat treatment apparatus in which semiconductor wafers are inserted one by one into a heating space and heat-treated, the heating space is a heat generating source with a large heat capacity and a small temporal temperature fluctuation;
1. A heat treatment apparatus for semiconductor wafers, characterized in that the semiconductor wafer is formed by a heat source having a small heat capacity and capable of rapidly changing temperature over time, and the semiconductor wafer is heated simultaneously with the heat source. 8. A semiconductor heat treatment apparatus in which semiconductor wafers are inserted one by one into a heating space formed by a heating lamp for heat treatment, wherein the heating lamp is composed of a filament and a sealed tube, and The sealed tube is formed to have a flat structure, and the filament is arranged in a plane within the sealed tube, and the planar direction of the flat sealed tube and the planar filament is aligned with the semiconductor. A heat treatment apparatus for semiconductor wafers, characterized in that the apparatus is installed parallel to the surface direction of the wafer. 9. The sealed tube is made of quartz glass, and the shape of the sealed tube is a flat circular shape, a flat annular shape, or a flat square shape, and the filament is a wire, or the wire is shaped into a small coil, or 9. The semiconductor wafer heat treatment apparatus according to claim 8, which is plate-shaped and has a spiral planar arrangement, a meander-like planar arrangement, or a planar arrangement with a large number of parallel lines. 10. The heating lamp is composed of a plurality of filaments sealed in one sealed tube and is divided into a plurality of groups, and the amount of heat generated can be adjusted independently for each filament group. 9. The semiconductor wafer heat treatment apparatus according to claim 8.