TW419795B - Semiconductor plastic package and method of producing printed wiring board - Google Patents

Abstract

A semiconductor plastic package having a structure in which a metal sheet having a size nearly equivalent to a printed wiring board is disposed nearly in the central portion in the thickness direction of the printed wiring board, at least one semiconductor chip is fixed on one surface of the printed wiring board with a thermally conductive adhesive, said metal sheet and a signal propagation conductive circuit on the front surface are insulated from each other with a thermosetting resin composition, the semiconductor chip is connected to the conductive circuit formed on the printed wiring board surface by wire bonding, at least the conductive circuit on said printed wiring board surface and a conductive circuit pad formed for connecting the conductive circuit to a conductive circuit formed on the opposite surface of the printed wiring board or to an outside of the package are connected with each other a conductive through hole insulated from the metal sheet with a resin composition, and at least the semiconductor chip, the wire and the bonding pad are encapsulated with a resin, the semiconductor plastic package having at least one via hole made in the reverse surface so as to be directly connected to the metal sheet, the via hole having an inner wall rendered thermally conductive, the printed wiring board being provided, on the semiconductor-chip-mounting side, with an elevated portion, a plurality of protrusions having the form of frustum of a pyramid or a cone each or a via hole having an inner wall rendered thermally conductive.

Description

419795 V. Description of the invention (1) TECHNICAL FIELD The present invention relates to a new semiconductor wafer mounting conductor plastic kick package, which has a structure on a printed wiring board for semiconductor plastic sealing, and for wiring. The board has a "metal sheet", and a method of manufacturing a wiring board. This printing is more specific, and it is used for the above semiconductor plastic package. The printed wiring board has a manufacturing method in which the printed wiring board is formed. 'The reverse side of this printed sheet is to the front or to more than one, the road, the hole: the entire wall connected to the metal or the channel hole, and the channel hole. The filling brush wiring board is suitable for power-consumption printed body plastic packaging on multiple ends, that is, microprocessing of crying places and semi-conducting semiconductors of the present invention. The semiconductor plastic packaging of the present invention uses solder balls: == Wiring board, and using the obtained unit as an electronic unit board. Technical Background About the semiconductor package "ε"-a plastic package with the following structure: a semiconductor wafer is fixed on the upper surface of a plastic printed wiring board. Wire bonding is used to bond to the conductive circuit formed on the printed wiring board, and a conductive pad for connecting to the mother board is formed on the reverse side of the printed wiring board by solder balls, so that the conductive circuit on the front and reverse sides communicates with the plating. Hole connection, and use of resin to encapsulate semiconductor wafers, such as plastic ball grid array (P-BGA) or plastic land grid array (P-LGA; plastic land grid array) ). In the above known structure, a plated through hole for heat diffusion is formed, and the plated through hole is connected from the upper surface to the lower surface of the semiconductor wafer to connect the metal surface to the lower surface, so as to connect ^ semiconductor 88114164, ptd page 7 > 419795 V. Description of the invention (2) ----- The heat generated by the body is diffused to the mother board printed wiring board. Water is absorbed through the above through-holes to the resin adhesive t containing silver powder for fixing the semiconductor. During the heating process of mounting the semiconductor component on the mother board or during the heating process of removing the semiconductor part from the mother board, an intermediate layer expansion occurs, which is called a popcorn phenomenon. When the popcorn phenomenon occurs, the package is no longer usable in many cases and it is necessary to greatly reduce the above phenomena. In addition, higher functionality and higher density in semiconductors means an increase in heat generation, and the formation of a through hole just below the semiconductor wafer is not sufficient for heat diffusion. Therefore, the present invention provides a semiconductor plastic package in which water absorption from the reverse side can be prevented, and its heat resistance after water absorption is significantly improved, which can greatly improve the popcorn phenomenon, has excellent thermal diffusion, is suitable for mass production, and can be improved. Economic performance, and a method for manufacturing a printed wiring board for the above plastic package. The invention further provides a semiconductor plastic package having excellent electrical insulation and mobile resistance after a pressure cooker test, and a method for manufacturing a printed wiring board. DISCLOSURE OF THE INVENTION According to the present invention, 'a semiconductor plastic package having the following structure is provided: a metal sheet having a size almost equal to that of a printed wiring board is provided near a central portion in the thickness direction of the printed wiring board' and at least one is made of a thermally conductive adhesive The semiconductor wafer is fixed to one side of the printed wiring board. The metal sheet and the signal transmission conductive circuit on the front side are insulated from each other by a thermosetting resin composition, and the semiconductor wafer is connected to the conductive formed on the surface of the printed wiring board by wire bonding. A circuit such that at least the surface of the printed wiring board

88114164.ptd Page 8 419795

The conductive circuit is connected to the conductive formed on the opposite side of the printed wiring board or to a conductive circuit pad and is formed for connection to a package through a conductive via having solder balls and a routing resin composition insulated from the metal sheet. And using a resin package to encapsulate at least the semiconductor wafer, the leads, and the bonding stage: 'This semiconductor plastic package has at least one channel hole made in the reverse side to directly connect to the metal sheet, and this channel hole has an inner wall that acts as a heat conductor. The printed wiring board is provided with a raised portion on the mounting surface of the semiconductor wafer, a plurality of protrusions each having a pyramid or a truncated cone shape, or a channel hole having an inner wall that is thermally conductive. In addition, according to the present invention, there is provided a semiconductor plastic package according to the above invention, in which a plurality of protrusions each having a truncated cone shape are in direct contact with a reverse side of a copper foil directly fixed to a semiconductor wafer. In addition, according to the present invention, there is provided a semiconductor plastic package according to the above invention, wherein at least one channel hole is formed directly below the semiconductor wafer on the semiconductor wafer mounting surface to be directly connected to the metal sheet. Further, according to the present invention, there is provided a semiconductor plastic package according to the above invention, wherein the metal sheet is formed of a copper alloy or pure copper having a copper content of at least 95% by weight. Furthermore, according to the present invention, there is provided a semiconductor plastic package according to the above invention, wherein the thermosetting resin composition contains a polyfunctional cyanate or a prepolymer of the cyanate. According to the present invention, there is also provided a method for manufacturing a printed wiring board having a metal sheet having a structure in which a metal sheet having a size almost equal to that of the printed wiring board is provided near a central portion in a thickness direction of the printed wiring board.

88114164.ptd Page 9 419795 The solid resin on the front side and the conductivity in the metal hole, the gold coating tree will be a metal and a pressure product, and the thermal manufacturing of the foil is used as a thermal diffusion metal filler for electrical connection, Any part of the semiconductor crystal of the present invention, the conductor wafer is divided. According to the present invention, the wafer is shaken by the semiconductor hole through the composition and the through hole on the opposite side, and the metal foil of each surface fat in the sheet to be formed is placed in any laminated shape, and the prepreg is used for solidification. The through hole of the through hole of the resin group is used to pass through the hole portion of the channel and then the anti-electroplating is applied to the front plate mounting portion on the front side and the electric circuit is connected. The surface forming the through hole is provided with at least one external resin in advance to prepare a mold and a resin sheet Fill the hole so that it is not connected to the through, through and reverse side, bonding agent, and then the shape of the impregnated embryo, such as on the layer, there is metal, coated with clearance hole metal sheet metal sheet hole gold metal pad part (5) Insulation of metal sheet by thermal circuit and insulation of fat composition. This method includes hole or slot hole sheet, coating and metal foil. The combination of raw materials is pressed and coated on the hot surface as a whole. Resin gold is used to sew holes, and then the reverse side is made for metal plating with gold to make the front side and the reverse side into an electric circuit, which will mine other than the pad part. In addition, according to the half-shaped high-rise part of the metal sheet, in addition, according to the semiconductor, the channel hole system sheet of the semiconductor and the conduction on the reverse side of the channel are formed by a thermosetting tree with a gap, and the resin does not exist. Layer or via hole or narrow contact, using a metal foil on the electroplated foil and ball table metal electricity to provide a method according to the above invention, the surface of the mounting surface has a pyramid or conical table to provide a method according to the above invention, the surface manufacturing Channel holes for heat diffusion are provided directly below the wafer to connect the metal to the metal plating and fill the metal.

88114164.ptd Page 10 ** I ii r y * 5 V. Description of the invention (5) Drawings Figure 1 Λ shows 7 steps for manufacturing a semiconductor plastic package in -fHk Example 1. Figure • The steps of manufacturing a semiconductor plastic package in Embodiment 1. FIG. 3 shows the steps for manufacturing a semiconductor plastic package in Comparative Example 1. FIG. Figure 4 shows the steps of manufacturing a semiconductor plastic package in comparison with the second embodiment. FIG. 51 shows steps of manufacturing a semiconductor plastic package in the third embodiment. Fig. 6 shows a printed wiring board in Example 4. The best way to practice the invention The symbols mentioned in the illustrations have the following meanings to illustrate the present invention, if necessary: a: error-free solder, b: metal sheet, ^: clearance hole, d: metal foil, e: resin Layer 'f: prepreg, g: through hole for conducting circuit conduction on the front and back, h: encapsulation resin, 丨: semiconductor wafer, j · silver paste, k: bond wire' 1: solder ball , Claw: anti-electroplating agent, η: prepreg in which a hole is made, 〇: through hole for heat diffusion, 'P: channel hole for heat diffusion, and q: corrosion inhibitor. In the plastic package of the present invention, a metal sheet with excellent thermal diffusion is set = close to the central portion of the printed wiring board. This metal sheet has raised metal protrusions, and a plurality of metal protrusions having a truncated cone shape or It is used as a thermally conductive inner wall and connected to a metal plate as a channel hole, and a plated through hole for conductive circuit conduction on the front and back surfaces is formed so that it has a diameter slightly smaller than the diameter of the clearance hole or the width of the slit hole. The diameter, and its appearance almost in the central portion filled with resin, thereby keeping the plated through-holes insulating properties from the metal sheet. Printed wiring in fixing a semiconductor wafer to a known metal sheet having through holes

4I9795

Method for the upper surface of the board The unavoidable phenomenon of popping the semiconductor wafer directly below the semiconductor wafer. The thermal diffusion system is a P-BGA package known as a thermal diffusion through hole produced in a semiconductor wafer, and the heat of heat is guided to the position, which cannot overcome the present invention, the use of an aqueous solution etching method, etc. At the position of the metal sheet, a raised protrusion or a plurality of protrusions each having a truncated cone shape is first formed at the position where the semiconductor wafer is to be mounted. When forming a channel hole connected to a metal sheet, it is not necessary to form raised protrusions or protrusions each having a truncated cone shape. In addition, at the same time or at a later stage, using a known etching, punching, drilling, or laser application method, a clearance having a size slightly larger than the size of the through-hole is formed in the position where the through-hole is to be formed. Holes or slit holes' so as to form through holes for front and back conduction. Depending on the need for improved adhesion and electrical insulation ', surface treatments, such as oxidation treatment, formation of metal pieces with raised protrusions or protrusions with a truncated cone shape and clearance holes or slit holes, using known methods Fine concave or convex parts or form a cladding layer. Form raised protrusions or multiple protrusions each having a truncated cone shape, apply a thermally conductive adhesive to it as necessary, and form a thermosetting resin composition on the entire surface of a metal sheet having clearance holes or slit holes. The insulating part of the object is such that raised protrusions or protrusions having the shape of a truncated cone are slightly exposed after forming the laminate. The insulating portion of the thermosetting resin composition is formed by using a prepreg prepared by impregnating a substrate with a semi-cured thermosetting resin composition and drying the composition, a resin sheet, or a resin-coated metal foil. The heat generated by the semiconductor wafer passes through high rises in the metal sheet

419795 V. Description of the invention (7) The object or the frustum-shaped metal sheet is diffused to form a hole, and then spread to the prepreg blank, the coating layer, and if necessary, the laminate is formed to form Laminates produced by single-sided metal veneer pressing or single-sided circuit formation of multiple layers are preferred, and the integrated metal sheet can have any grease composition. When the method is shaped, it will have slightly larger than the outermost front and back pressure forming, and the metal sheet with the front side of the foil is formed. When the metal foil is not used, the known addition is used to subtract the above. The method uses a drill, which is manufactured in sections as holes for small diameters. The state of the protrusions is printed on the mother board which is installed on the reverse side and connected with the metal sheet material ball, resin metal foil, resin metal foil. The resulting air is better, and the whole product and single-sided circuit are formed into a double-laminated product, which is placed under each heat and pressure to form a laminated body. Shaped sides, such as warp or exposed sides. In order to prevent the printed wiring board from having no metal surface exposed through holes, when the size of the printed wiring board's side 'and the resulting combination and reverse side are coated, it is used to form a metal-clad laminate. Circuits are formed for the front and back layers, and the radiation produced by the manufacturing method or the addition method, etc., in addition to the semiconductor front and back surfaces, part of the heat is conducted to the channel directly connected to the wiring board. Reverse side: Sheet or coated resin: Combined under heat and pressure. Laminated copper and laminate on the reverse side can be used to make the patina green, which is better in shape than covering the thermosetting tree in a vacuum. Laminates are formed. Metal foils are each placed to form layers of outer circuits under heat and pressure. Laminates are formed into printed wiring boards. Boards that use through-holes for conduction other than known fixed parts

419795 V. Description of the invention (8) The holes used as through holes for circuit conduction on the front and back sides are made near the center of the metal sheet gap holes or slit holes filled with resin so that they will not interact with Metal pieces are in contact. If necessary, perform a decontamination treatment, and then form a metal layer inside the through-hole through electroless plating or electrolytic plating to form a plated through-hole. In the full addition method X, a circuit and a pad for solder balls are formed at the same time. In the semi-additive method, the through-holes are recorded, and at the same time, the front and back sides are completely plated, and then a circuit is formed on the front and back sides using a known method. Drilling, plasma, etc., are used to make holes as passage holes to reach the metal sheet, and if necessary, the resin layer adhered to the surface of the metal sheet is removed by decontamination treatment, plasma treatment or low-pressure ultraviolet light treatment. The through holes are then plated, and in addition, the passage hole portions are plated. The channel holes are plated with copper to completely fill the channel holes, thereby 'improving the reliability of the conductivity of the channel hole portion' and increasing the heat conduction area compared to the channel hole wall of the electric mineral metal, so that excellent heat can be obtained. Diffusion-type plastic packaging is preferred. The plating can be performed by a generally known method. Channel holes can be filled with thermally conductive adhesive. After the circuits are formed on the front and back surfaces, a plating layer of noble metal is formed on at least the surface of the wire bonding pad to complete the printed wiring board. In this case, the part that does not require precious metal electricity will be covered in advance with the anti-electric mineralizer. Alternatively, after power mining, if necessary, a known thermal resin composition or light selection is formed on the surface except the semiconductor wafer mounting portion #, the bonding pad portion, and the solder ball bonding pad portion on the opposite side. Of thermosetting resin composition

Page 14 419795__ 5. Description of the invention (9) " 'layer. If necessary, apply a thermally conductive adhesive under the metal foil portion where the semiconductor wafer is to be mounted to the tops of raised protrusions or protrusions with a truncated cone shape, and bond the metal sheet to the metal cymbals during the forming of the laminate. The adhesion of the metal foil on the surface is improved, and the reliability of the printed wiring board produced is excellent. The semiconductor wafer is fixed to the above metal foil with a thermally conductive adhesive. In addition, a bonding pad that connects the semiconductor wafer and the circuit of the printed wiring board by a wire bonding method, and at least the semiconductor wafer and the bonding wire are packaged with a known packaging resin. And combine Taiwanese. A solder ball is connected to a solder ball-connected conductive pad on a surface opposite to the mounting surface of the semiconductor wafer to prepare a Buerer. This solder ball is located on a circuit board of a printed circuit board of a mother board, and via hot-melt solder Ball to connect the above package to the motherboard printed wiring board. Alternatively, P-LGA is prepared without attaching any solder balls to the package, and when the package is mounted on a mother board printed wiring board, the solder balls formed on the mother board printed wiring board are connected by melting the solder balls under heating. Connect a conductive pad and a conductive pad as a solder ball for LGA. Although there is no particular limitation on ancient times, the metal sheet used in the present invention has the same elastic modulus and high thermal conductivity, and preferably has a thickness of 30 to 500 microns. Specifically, preferred materials are flakes formed of pure copper, flakes formed of oxygen-free copper ', or alloys containing at least 95 weight percent copper and a sufficient amount of ^ Sn, p, _Cr, Zr, Zn, etc. The formed thin; ^. This can be a metal sheet prepared by plating the alloy with copper. Highly raised protrusions coated with thermally conductive adhesive or protrusions with a truncated cone shape

4ί9795 V. Description of the Invention (ίο) There is no particular limitation on the quality of the starting material, but it is preferably 50 to 150 microns. In addition, when forming a laminate, adjust an insulating layer such as a prepreg, a resin sheet, a resin-coated metal sheet, or a coated resin to have protrusions slightly smaller than protrusions or protrusions having a truncated cone shape. The thickness is preferably 5 to 15 microns smaller. After the laminate is formed, the insulating layer is connected to the metal foil on the surface. The size of the raised protrusion is not particularly limited, but it generally has a base portion with a diameter of 0.1 to 5 mm and an upper portion with a diameter of 0 to 1 mm. The thermally conductive adhesive may be selected from known adhesives. Specifically, it includes, paste, copper paste, solder paste, and lead-free solder containing tin, silver, and copper. The area where raised protrusions or protrusions having the shape of a truncated cone has an area equal to or smaller than that of a semiconductor wafer. size of. Generally, the above area has a square or rectangular frame with sides of 5 to 20 mm or less, below the portion where the semiconductor wafer is mounted. The heat used in the present invention is selected from known thermosetting resins. Lipids, polyfunctional cyanate resins, polyresin 'polyfunctional cis-butene difluorene arylene ether resins, and these resins are preferably moisture-resistant, anti-moving properties, and acid-absorbing resin compositions. Specific examples of resins of the solid resin composition that can generally be used include epoxy resin-functional cis-butene diimide-acetic acid cyanate resins, and unsaturated group-containing polymers used alone or in combination. From the perspective of heat resistance and electrical characteristics after water, the polyfunctional cyanide 2 is the preferred thermosetting resin content in the present invention. It refers to a compound having at least two alkoxy groups per molecule. Its special features include 1,3- or 1,4-dicyanooxybenzene, 1,3, 5-tricyanooxybenzene,

4 ^ 9795 V. Description of the invention αι)-1,3 —14-, 1'6-, 1,8-, 2, β-, or 2,7 -dicyanooxynaphthalene, 1, 3, 6- Tricyanonaphthalene, 4,4_dicyanooxybiphenyl, bis (4-dicyanooxyphenyl) methyl, 2,2 ~ bis (4-cyanooxybenzyl) propane, 2,2_bis (3,5-Dibromo_4 monocyanooxybenzyl) propane, bis (4-cyanooxyphenyl) ether, bis (4-cyanooxyphenyl) sulfide, bis (4-cyanooxybenzyl) fluorene Rat, ginseng (4-cyanooxyphenyl) phosphite, ginseng (4-cyanooxybenzyl) phosphate, and prepared by a reaction between a soluble phenol resin (novolak) and toothed cyanide Of cyanate. In addition, the polyfunctional cyanate ester compounds disclosed in Japanese Patent Publication Nos. 41M928, 42-1 8468, 44-479 1, 45-11Π2, 46_41Π2, and 47-26853 and JP A 51 63149 can be used. Further, a prepolymer having a molecular weight of 400 to 6,000, and a tertiary ring formed by dimerizing a cyanooxy group of any of these polyfunctional cyanate compounds may be used. The prepolymer is prepared by polymerizing the above polyfunctional cyanate monomer in the presence of a catalyst selected from the group consisting of acids such as mineral acids or Lewis acids and bases such as secondary amines, for example, sodium alkoxides, or salts such as sodium carbonate. Made by the body. The polymer prepolymer contains unreacted monomers and is in the form of a mixture of monomers and prepolymers, which is also applicable to the present invention. Generally, it is dissolved in an organic solvent in which it is soluble before use. The epoxy resin may generally be selected from known epoxy resins. Specific examples thereof include liquid or solid bisphenol A type epoxy resin, bisphenol F type epoxy resin, phenol soluble melt type epoxy resin, cresol soluble melt type epoxy resin, and alicyclic epoxy resin. , Polyepoxy compounds prepared by epoxidizing the double bonds of butadiene, pentadiene, vinylcyclohexene or dicyclopentyl ether, polyols, and via hydroxyl-containing polysiloxane resins and Produced by the reaction between epoxy propane

4/9795 V. Description of the invention (12) Polyglycidyl compound. These resins can be used alone or in combination. The polyfluorene resin may generally be selected from known polyfluorine resins. Specific examples thereof include the reaction product of a polyfunctional cis-butene difluorene imine and a polyamine, and a polyfluorene imine having a terminal bond group disclosed in JP-B-57-005406. The above thermosetting resins can be used alone, although it is preferable to use them in combination in view of the balance of characteristics. Various additives may be added to the thermosetting resin composition in the present invention, as long as the inherent properties of the composition are not impaired. The above additives include monomers having polymerizable double bonds such as unsaturated polyesters, prepolymers thereof; liquid elastic rubbers having low molecular weight or elastic rubbers having high molecular weight such as polybutadiene, epoxidized butadiene, cis Butadiene acidified butadiene, butadiene-acrylonitrile copolymer, polychloroprene, butadiene-styrene copolymer, polyisoprene, butyl rubber, fluorine rubber and natural rubber; polyethylene, poly Propylene, polybutene, poly-4-methylpinene, polystyrene, AS resin, ABS resin, MBS resin, styrene-isoprene rubber, polyethylene-propylene copolymer, 4-fluoroethylene-6 -Fluoroethylene copolymers; high molecular weight prepolymers or oligomers such as polycarbonates, polyphenylene ethers, polysteres, polyesters and polysulfide phenylenes; and polyurethanes. These additives are used as needed. In addition, 'known additives, such as inorganic or organic fillers, dyes, pigments, thickeners, lubricants, defoamers, dispersants, coating agents, photosensitizers, flame retardants, Whitening agent, polymerization inhibitor and thixotropic agent. If necessary, a curing agent or catalyst is added to the compound having a reactive group.

88114164.ptd Page 18 41 ^ 795

The thermosetting resin composition of the present invention undergoes curing by itself under heat. Of course

The catalyst amount of the thermosetting resin is from 0.05 to 10 parts by weight, preferably from 0'01 to 5 parts by weight. The reinforcing material for the prepreg is generally selected from known inorganic or organic woven or non-woven fabrics. Specific examples thereof include known glass-breaking fiber fabrics of E glass, s glass, and d glass, wholly aromatic polyamide fiber fabrics, liquid crystal poly 61 fiber fabrics, and polybenzoxazole fiber fabrics. It can be intertwined. Further, a material prepared by applying a thermosetting resin composition to both surfaces of a film such as a polyimide film, and heating the thermosetting resin composition to make it semi-cured may be used. As the outermost metal foil, it can be generally selected from known metal foils. It is preferable to use a copper foil or a nickel foil having a thickness of 3 to 18 m. The clearance holes or slits' are formed so as to have a diameter or width slightly larger than the diameter of the through-holes used for conduction on the front and back sides. Specifically, the walls of the through holes and the walls of the clearance holes or the slit holes are preferably insulated from each other by a thermosetting resin composition layer having a thickness of at least 50 µm. Although there are no special restrictions, the diameter of the through-holes used for the front and back conduction is 50 to 300 microns. Compared with the semi-cured laminate, which is a substrate, it becomes a semi-cured resin sheet. In the present invention, when used for a prepreg of a printed wiring board, the substrate is impregnated with the thermosetting resin composition, and the thermosetting resin composition is dried. In addition, it can also be used unused. In this case, the resin sheet

419795 V. Description of the invention (14) It is prepared from high fluidity, low fluidity or non-fluidity sheet. The non-flowing sheet is prepared so that the flowability of the resin is 100 micrometers or less and preferably 50 micrometers or less when the laminate is formed under heat and pressure. In this case ', basically, the sheet can be bonded to the metal sheet and the metal foil without generating any voids. The temperature for preparing prepreg embryos is generally between 1000 and 180. The time is 5 to 60 minutes, and it is appropriately selected depending on the degree of expected liquidity. The manufacturing method of the present invention will be described with reference to a manufacturing method of a semiconductor plastic package having a plurality of protrusions each having a truncated cone shape on a semiconductor wafer mounting surface and a channel hole on the opposite surface. The following description refers to FIG. (1) the entire surface of the metal sheet to constitute the inner layer is covered with a liquid corrosion inhibitor ', heated to remove the solvent, and then one side of the metal sheet is covered to prepare a portion of the semiconductor wafer to be worn In the form of a small piece of circular corrosion protection: two negative thin crickets. Irradiate with ultraviolet light, then use 1% sodium carbonate to dissolve in water, remove the m-shaped exposed part and remove the clearance on the reverse side: the hole part is formed on the surface by dissolving a metal sheet of a predetermined thickness ^ Two-shaped protrusions And clearance holes, and then the corrosion inhibitor is removed, and the entire surface of the sheet is chemically treated (Figure 1 (1)). (Figure 1 (2)). 11 solder a sticks to the tip of a frustum-shaped protrusion: a semi-cured resin-coated metal box made by applying a * thermosetting resin composition to a metal foil and thermosetting it: On Table®. On the rod, ... ^ slip / brother 'to form a resin layer' so as to have a truncated cone shape

88114164.ptd Page 20 4 ^ 79g V. Description of the invention (15) The top of the protrusion has a thickness slightly smaller than the thickness of the metal foil, and the prepreg, resin sheet, and coated tree are provided on the reverse side. After coating the resin layer, and if necessary, metal foil, single-sided gold = metal foil or products, single-sided circuits to form double-sided copper laminates, or single-sided laminated ink products are placed on the outside. (Figure 1 3)). Forming multiple layers (:): The resulting 2m) 〇 α is pressurized under heat, pressure, and vacuum (Figure C: 5) and then in a predetermined position, which does not touch the inner layer: a state to produce a through hole. (Figure 2. The chip connection (6) uses a mechanical drill and a laser to do the reverse, and the metal cloth is used to decontaminate the metal and then the electricity is generated: / = Ϊ 方 Ϊ 士: a circuit is formed on the surface. The semiconductor wafer is removed. The f part of the σ 0 pad part and the solder ball table pad part on the reverse side is covered with an anti-plating agent, and then the precious metal is formed: the semiconductor wafer is bonded to the semiconductor wafer dispersing part on the surface. After the metal circle W, the resin is used for encapsulation, and if necessary, a solder ball is combined (:. Exemplary examples = will be made clear with reference to the following examples and comparative examples: 'external' unless otherwise specified 'or' part 'represents "Weight 2 ° Example 1 900 parts of 2,2-bis (4 -4,4,4,2,4-cyanobenzyl) propane and 100 parts of bis (4-; pentadiene 88H4164.ptd page 21 419795 five 2. Description of the invention (16) Diamidophenyl) methane is melted at 150 ° C and reacted with stirring for 4 hours to produce a prepolymer. The prepolymer is dissolved in methyl ethyl hydrazone and diamine. In a mixed solvent of methylformamide. Add 40 to the resulting mixture. 0 parts of bisphenol A-type epoxy resin (trade name: Epikote 1001, Yuka-Shell Epoxy K. K · Supply) and 60 parts of cresol soluble and soluble epoxy resin (trade name: ESCN-220F 'Sumitomo Chemical Co., Ltd.) and dissolve and mix these materials. In addition, 0.4 part of zinc octoate was added as a catalyst, and dissolved and mixed therein. 500 parts of inorganic was added to the resulting mixture. Filler (commercial name: calcined talc, supplied by Nippon Talc KK), and these materials are uniformly stirred and mixed to prepare a resin liquid A. The above resin liquid is supplied to a 100 micron-thick glass textile fabric, and the resin Liquid drying with a gel time of 50 seconds (at 170 ° C), a resin flow length of 10 mm under conditions of 170, 20 kgf / cm2 and 5 minutes, and a length of 11 μm The semi-cured prepreg blank B of the insulation layer thickness. The resin solution A was supplied to the treated surface of the 12-micron-thick electrolytic copper foil and dried to obtain a gelation time of 65 seconds and a time of 11-4 micrometers. Insulated resin-coated copper box C 200 micron thick alloy sheets with Cu: 99.9%, Fe: 0_07% and P: 0.03% are provided as metal sheets. Liquid corrosion inhibitors are supplied to both sides to a thickness of 25 microns and dried 'and will be prepared into In the center of the 50 × 50 mm size package to be formed, a negative film having a circular form of a corrosion inhibitor having a diameter of 30 μm was covered on the front side with a 2 mm interval in a square area having a 13 mm side. A negative film prepared to remove the corrosion inhibitor in the clearance hole portion was covered on the reverse surface, and was irradiated with ultraviolet light.

88114164.ptd Page 22 ^^ 795 ^^ 795 5. After the description of the invention (17), the 1% sodium carbonate aqueous solution was used to dissolve and remove the unexposed part. The two surfaces were engraved with silver to form 2 5 protrusions each having a truncated cone shape, which had a height of 117 microns, a base diameter of 520 microns, and a tip diameter of 250 microns, and simultaneously produced a clearance having a diameter of 0.6 mm. Holes (Figure 1 (1)). Adhere the error-free solder (tin / silver / copper = 96/3. 5/0. 5%) to the top of the protrusion with the shape of a truncated cone (Fig. 丨 (2)), and apply the resin-coated copper foil c Place on the upper surface, place prepreg B on the lower surface 'and place a 12 micron thick electrolytic steel foil on it (g (3)). The resulting combination was laminated and formed in a vacuum of 23 kg at 20 kgf / cm² under a meter of mercury for 2 hours to integrate it (Figure 2_ |. Made in the center of the clearance hole portion, there is 0.2 5 mm; the crossbow passes so that it does not come into contact with the metal piece of the clearance hole portion (Figure. This one, the central square area of 13 mm x 13 mm ^ on the reverse side), is etched in copper foil Making holes with 0 0 k card straight and irradiating with carbon monoxide gas laser to make passage holes to reach the metal sheet as the inner layer. Decontamination treatment, copper plating using electroless plating method and electroplating method, A 17-micron-thick copper plating layer is formed in the hole. The anti-corrosive is adhered to the front and back surfaces, and a positive film is subsequently 'exposed' to the shadow and a circuit is formed on the front and back surfaces. Combining the table pad part and the ball table pad ", an anti-plating agent is formed on the outer part, and nickel and gold plating are performed to brush the wiring board with P. Using a silver paste, a semiconductor wafer having a square size of 3 mm x 3 mm Bonded and fixed to the copper foil having a truncated cone shape of the protrusions on the surface of the connector thereto, followed by wire bonding. Then using the silicon oxide-containing epoxy resin liquid packets packet portion of the semiconductor wafer A, the wire portion

I turn 88114164.ptd page 23 419795

5. Description of the invention (18) to prepare a semiconductor plastic package The above semiconductor plastic package Table 1 shows the evaluation results. Separate and combine the pad parts, and connect the mounting materials (Figure I%). The printed wiring board is connected to an epoxy mother board via a molten solder ball. Example 2. A printed wiring board was prepared without using a semiconductor plastic package in the same manner as in Example 1 and an error-free solder was prepared in the same manner as in Example 1 and mounted in the same manner as in Example 1. Table 1 shows the evaluation results. Comparative Example 1 μ:] i r Two sheets of prepreg b prepared in Example 1. Place 12 :: on each of the upper and lower surfaces (Figure 3⑴), and make the ^ C at 20 kgf / cm2 and less than 30 mm Hg qr 9, and laminate for 2 hours. Double-sided steel laminates (fig., Made with a drill in predetermined locations each having a diameter of 0.25 mm ^ i) and copper-plated on a decontamination treatment. Copper is plated on the top and bottom of the pressed product according to known methods A circuit is formed, and the surface is covered with electroplating, and then nickel plating and gold plating are performed (FIG. 3 (3)). In this case, a through hole for heat diffusion is formed in the semiconductor wafer mounting position. The semiconductor wafer is made of silver paste Bonded thereto, and after wire bonding, encapsulation was performed using an epoxy encapsulation compound in the same manner as in Example 1. Bonding solder balls (Fig. 3 (4)) ° Similarly, bonding to the motherboard was performed in the same manner. The evaluation results are shown in Table 1. Comparative Example 2 700 parts of epoxy resin (trade name: Epikote 5045), 300 parts of epoxy resin (trade name: ESCN22〇F), 35 parts of dicyandiamide and 1 part 2-ethyl

88114164.ptd Page 24-19796 V. Description of the invention (19) --- -4-methylimidazole is uniformly dissolved in a mixed solvent of methyl ethyl ketone and dimethylformamide and its use The resulting mixture was impregnated with a 100 micron-thick glass textile fabric and dried to obtain a non-flowable prepreg with a gel time of ΐθ seconds (at 170 ° t) and a known grip length of 98 micron. Embryo (prepreg embryo ρ) and a highly fluid prepreg (prepreg E) with a gel time of 150 seconds and a resin flow length of 18 mm. Two pieces of prepreg E were used. At 丨 9〇. (: Laminated in a vacuum of less than 30 mmHg for 2 hours at 20 kgf / cm² and produced by double-sided copper = laminated product (Figure 4 (1)). Implementation will be compared with Example} Preparation of printed wiring boards, drilling holes in semiconductor wafers, mounting parts using drill pit machines, & using sheets prepared by punching the above non-flowable prepreg blank f 'In a similar manner, a 200 micron thick steel sheet was bonded to the reverse side under heat and pressure to produce a printed wiring board with a heat sink applied (Fig. 4 (2)). The printed wiring board was twisted to some extent. Utilization Silver paste, the semiconductor wafer is directly bonded to the heat sink, wire bonding, and the semiconductor wafer is encapsulated with a liquid epoxy resin (Figure 4 (3)). The printed wiring board is bonded to the motherboard printed wiring board in a similar manner. Table 1 shows evaluation result.

88114164.ptd Page 25

Jade, description of invention (20) Table 1 Project Example Comparative Example 1 2 I 2 General state after water absorption _ status no failure no failure no failure no failure heat resistance υ 24 hours no failure no failure no failure no failure 48 hours no Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure Failure and failure. Partial peeling. Partial peeling. The general state after water absorption. Failure. Failure. Failure. Failure. Failure. Heat resistance. 2) 2 4 hours. Failure. Failure. Failure line rupture line rupture 96 hours without failure Fail line failure rupture line 120 hours lapse failure Fail line failure rupture line rupture 144 hours lapse failure Fail-168 hours lapse failure Fail failure--GTT rc) 237 237 234 160 General at the pressure cooker status 4xl014 5xl〇14 6x10 " 5xl〇14 absolute 200 hours after processing 6X1012 5xl〇, 2 5xl〇12 2x10® edge resistance 500 hours 6x10 " 3xl〇n 3x10 " < 10® (Ω) 700 hours 5xl0 '° 6xl 〇10 2xl010-1000 hours 2xJ0l ° lxlO10 lxlO10-general state of anti-mobility 6x1013 6xl〇U 4xl013 6xl〇i3 quality (Ω) 200 hours 5x10 " 4xl〇 " 4x10η 3xl〇9 5 00 hours 4xlOu 4x1〇11 4lt10 &; 10 * 700 hours lxlO11 2xl〇u! Xl〇n-1000 hours 9x1010 lxl0 '° 8xl〇10-thermal diffusivity rc) 35 36 56 48 Excellent on the surface--Copper foil adhesion GTT == Glass transition temperature iifii ~ 88114164tptd Page 26 419795 V. Description of the invention (21) < Measurement method> 1) Heat resistance after water absorption n: JEDEC standard test method A113-A 3rd stage: at 30 ° C at 60% After processing for a predetermined time under RH, and after 3 cycles of reflow at 22 0 ° c, the failure was evaluated by observing the cross section of the substrate and conducting an electrical test. 2) Heat resistance after water absorption 2): JEDEC standard test method A113-A 2nd stage: at 85. (: After processing at 60% RH for a predetermined time (maximum 168 hours), and after 3 cycles of 220 ° C heavy-flow welding, evaluate the failure of the substrate by observing the cross section of the substrate and conducting electrical inspection. 3) Glass transfer Temperature: Measured by DMA method. 4) Insulation resistance value after treatment with a pressure cooker: prepare a comb pattern between the terminals (line / space = 70/70 microns), place each prepreg used on it or form a resin layer, and cure the resin . The resulting laminate was treated at 121 t at two atmospheres for a predetermined time, then at 25 t at 60% RH for 2 hours, and after applying 500 volt DC for 60 seconds, the insulation resistance between the terminals was measured. value. 5) Anti-moving property: Measure the insulation resistance between terminals at 85 ° C, 85% RH and 50 VDC under the applied charge. 6) Thermal diffusivity The package is bonded to the motherboard printed wiring board with solder balls and used continuously for 1,000 hours to measure the package temperature. 7) Adhesion to metal foil as surface layer Observe the cross section of all protrusions with a truncated cone shape. Example 3

88114164.ptd Page 27 419795 V. Description of the invention (22)

A 100 micron-thick glass silk-sensitive 4 A-added final woven fabric was immersed in the resin liquid 'made in Example 1, and the liquid was dried to achieve a gelation time of 50 seconds (at 170 t: 1 millimeter and a force of 170 meters). Ft: p degrees for 5 minutes at 2 ° kgf / cm². A semi-cured pre-2.2 'with an insulation layer thickness of 40 micrometers was obtained, with a gel time of 7 seconds and a resin flow of 95 micrometers. Length and, prepreg H with an insulation layer thickness of 126 microns. Individually provided 100 micron thick alloy sheets with a content of Cu: 99.n, Fe: 0.007% and p: 0.03% ( Figure 5, b) is used as the inner metal sheet. The liquid anti-repellent (Figure 5, q) is applied to both surfaces to a thickness of 25 microns, and dried. The center of the surface area to form a 5 "50 mm size package is left with 13 Anti-remaining agent on the square area of the millimeter side and leaving anti-narration agent on the part other than the clearance hole. The two surfaces are etched to form a square with a side of 13 mm and a height of 120 microns on the front side Shaped raised protrusions and formed clearance holes with a diameter of 0.6 mm (Figure 5, c).处理 > Black copper oxide, put a sheet (Fig. 5, η) from the prepreg embryo with holes having a size slightly larger than the size of the metal raised protrusions on the front side Place a sheet (Figure 5, f) from the prepreg G on the reverse side, place 12 micron thick electrolytic copper foil (Figure 5, d) on top of each other, and make the resulting combination in 200 It was laminated and molded in a vacuum of 20 kgf / cm2 under 30 mmHg for 2 hours to fill and integrate the resin in the gap hole portion. In the through hole portion, a drill was used at each A center hole of 0.25 mm diameter is made in the center so that it is not in contact with the metal core. In addition, 625 holes each with a diameter of 20 microns are made from the reverse side using a carbon dioxide gas laser to reach the metal

88114164, ptd page 28 I 419795 5 'Explanation of the invention (23) pieces', and then subject to electric treatment and decontamination treatment. Copper ore is then carried out to achieve copper plating in the via portion. In addition, the via holes in the reverse side are filled by copper plating. Then, circuits are formed on the front and back surfaces, and the portions other than the semiconductor wafer mounting portion on the front surface, the bonding pad portion, and the ball table 塾 portion on the reverse surface are covered with an anti-plating agent, and nickel plating and gold plating are performed to generate printed wiring. board. A silver wafer (Fig. 5'i) having a square size of 13 x 13 mm was bonded and fixed to the rain-starting portion of the metal sheet with a silver paste. This portion was the semiconductor wafer mounting portion on the front side, and then wire bonding was performed. Then, the semiconductor chip is encapsulated with the epoxy resin-containing liquid resin (Fig. 5'h) containing the crushed chip, and the lead part and the bonding pad part are combined, and the material ball pad is used to produce a semiconductor package. A semiconductor plastic package is bonded to an epoxy mother board printed wiring board via a molten solder ball. Table 2 shows the evaluation results. ^ Example 4: 100 micron thick glass textile fabric was impregnated with the resin solution A prepared in Example 丨, and the resin solution was dried to achieve a gelation time of 50 seconds (under i7 () (5c)), And 10 mm in length 701 at 20 kgf / cm² for 5 minutes of resin flow length. A semi-cured prepreg I with an insulation layer thickness of 120 microns was prepared. Individually provided with Cu: 99.9%, Fe: 〇7% & ρ: 〇03% content of 100 micro thick alloy sheet as the inner layer metal sheet (囷 6, c). Liquid ::: coated on both surfaces to a thickness of 25 microns, and Dry. Remove the anti-money agent from the part where the clearance hole is to be made and divide it into a size of 50 x 50 mm.

88114164, ptd page 29 '^ 19786 V. Invention Director) " Removal of parts outside the square area with 13 millimeters in the center of the surface area of the package' and similarly remove the holes in the clearance on the reverse side Remainder in part. Both surfaces were etched to form clearance holes having a diameter of 0.65 micrometers. The entire surface of the metal sheet is treated to form black copper oxide, and the sheet from the prepreg I is placed on each of the two surfaces, and a 12 micron-thick electrolytic copper foil is placed on each of it 'and The obtained combination was laminated and molded in a vacuum of 200 t under 20 kgf / cm 2 under 30 mm Hg for 2 hours to fill the gaps in the voids and integrate them. In the through-hole portion ', a 0.25 mm diameter through-hole was made at each center by using a drill so that it did not contact the metal core. In addition, a carbon dioxide gas laser was used to make channel holes with diameters of 20 μm each from the front and back (Fig. 6'P) 'to reach the metal core and perform decontamination treatment. Copper plating is then performed to achieve copper plating in the through hole portion. In addition, the via holes in the front and back sides are filled with a deposited copper plating material. Then, a circuit is formed on the front and back sides. 'The parts other than the semiconductor wafer mounting part on the front side, the bonding pad part, and the ball table pad part on the reverse side are covered with a plating resist (Figure 6, m)', and nickel plating and Gold plating to produce a printed wiring board β Use a silver paste to bond and fix a semiconductor wafer with a square size of 13 X 13 mm (Fig. 6'i) to the channel hole portion, which is the semiconductor wafer mounting portion on the front side, and then wire bonding (Figure 6, k). Then, an epoxy encapsulating compound (Fig. 6, h) containing oxidized fossils is used to encapsulate the semiconductor wafer portion, the conductor portion, and the bonding pad portion, and the solder ball is bonded to the backside ball table 塾 'to produce a semiconductor package. The semiconductor plastic package is bonded to the epoxy mother board printed wiring board via a molten solder ball. Table 2 shows the evaluation

88114164.ptd Page 30 V. Description of Invention (25) Estimated results. Table 2 Project Example 3 4 General status after water absorption without failure without failure heat resistance A) 2 4 hours without failure without failure 4 8 hours without failure without failure 72 hours without failure 9 failure without failure 1 2 0 Hours without failure 1 4 4 hours without failure 1 6 8 hours without failure 1 6 8 hours without failure General condition after absorbing water without failure without failure heat resistance B) 24 hours without failure 4 without failure 4 8 hours without failure 72 hours without failure No failure 96 hours without failure 1 2 0 hours without failure 1 4 4 hours without failure 1 6 8 hours without failure GTT (t) 234 234 thermal diffusivity (° C) 35 32 with b GTT = glass transition temperature

88114164.ptd Page 31 419795

Claims (1)

6. Scope of patent application 6. The scope of patent application and the direction of the bulk crystal signal of the printed direction are connected to the conductive material to seal the hole. The inner part is used as 2. Each side has 3. Thermally conductive foil—a kind of semiconductor plastic brush wiring board Almost near the central piece is fixed to the printed transmission conductive circuit wire combined with the semi-conductive circuit, so that the pad formed on the printed circuit table is shaped to be insulated from the metal sheet at least the semiconductor crystal semiconductor plastic seal to be directly connected to the wall. A plurality of copper foils each having a conical frustum shape copper foil with thermal conductivity, such as a patent application, are bonded to each glue with the following structure: wherein, a metal sheet of the same size is provided on a printed wiring board. In terms of thickness, one surface of at least one semiconducting wiring board, the metal sheet and the front surface are insulated from each other by a thermosetting resin composition using a thermally conductive adhesive, and the body chip is connected to the surface of the printed wiring board. The conductive circuit on the surface of the printed wiring board is connected to the conductive circuit on the opposite side of the wiring board or 10% for connecting to the outside of a package with solder balls and conductive vias made of resin, and using resin sheets, wires, and bonding pads, equipped with at least one channel hole made on the reverse side = sheet This channel hole has at least one channel hole with thermal conductivity provided with a metal protrusion in the form of a raised metal 2 or a truncated cone on the mounting surface of the semiconductor wafer. Item of semiconductor plastic package, in which a plurality of conductor chips are directly connected to its perfect circle item II semiconductor plastic package, in which a plurality of protrusions with a truncated cone-shaped shape are combined to gold. The conductor wafer mounting surface of item 1 is packaged in a semiconductor J glue package, of which at least one trip is provided directly below the half Ba Fill the channel holes of the plating material. 5'As in the semiconductor plastic package of the first scope of the patent application, wherein at least one channel hole is formed in the reverse side and filled with a plating material. 6 · If the semiconductor plastic package of item 1 of the patent application scope, the metal sheet is formed of a copper alloy or pure copper with a copper content of at least 95% by weight. 7. The semiconductor plastic package according to item 1 of the patent application scope, wherein the thermosetting resin composition comprises a polyfunctional cyanate ester or a prepolymer of the cyanate ester. 8 ♦ A method for manufacturing a printed wiring board having a metal sheet, having the following structure: wherein a metal sheet having a size almost equal to that of the printed wiring board is provided near the central portion in the thickness direction of the printed wiring board, and the metal sheet is made of thermosetting The resin composition is insulated from the conductive circuits on the front and back surfaces, and the conductive circuits on the front and back surfaces are connected to each other by conductive vias insulated by the thermosetting resin composition. The method includes in the metal sheet, Provide clearance holes or slit holes at the positions where the through holes are to be formed. 'Provide at least one of a prepreg, a resin sheet, a coating and a resin-coated metal foil on each surface of the metal sheet, if no metal V is present. If so, a metal box is placed on any external resin layer, and the resulting combination is laminated under heat and pressure to prepare a copper-faced overall laminate with a metal sheet 'and use a prepreg, a resin sheet Material, thermosetting resin composition of resin-coated or metal-coated metal foil to fill gaps or slit holes, and then make perforations for through holes Eyebrow sheet is not in contact with gold, with a diffusion passage holes in the back of the heat production of the connection to the metal sheet, a metal to metal fill key channel hole portion 'of the metal electrode via a through hole ore 88114164.ptd Page 34 6. The scope of the patent application makes the front side and the back side electrically connected, and then a circuit is formed on the front and back metal, and any part except the semiconductor wafer mounting part, the bonding pad part and the ball A pad part is coated with an anti-plating agent. , And then perform the second gold plating. The raised portion of the semiconducting conical frustum of the metal sheet 9. According to the method in the eighth aspect of the patent application, the surface of the mounting surface of the body chip has a pyramid shape. 1 0 · If item 8 of the scope of patent application is applied, the conductors on the mounting surface are directly underneath the conductor wafer for connection to metal plating and metal filling. Method 'wherein a semiconductor hole is provided with a channel hole, the channel hole is provided in a semi-metal sheet, and the channel hole is provided through 88114! 64.ptd Page 35