經濟部中央標準局員工消費合作社印繁 A7 B7 五'發明説明（丨） 本發明是有關於積體電路元件的製程，且特別是有關 於一種積體電路其金屬間接觸窗的製造方法。 接觸窗是作爲積體電路元件中，不同層之間的導電層 (金屬層）相互連通之用。其製造方式是先在一第一層導 電區上形成一金屬間介電層（Inter-Metal Dielectric ， IMD )，然後再選擇性蝕刻此金屬間介電層，以形成一露 出第一層導電區的接觸窗（Contact Via )，後續則將金屬 材料塡入此接觸窗內，形成一導電插塞（Plug )。接著， 再形成一第二層導電區，而藉由接觸窗內的導電插塞來連 接此兩層導電區。 通常，金屬間介電層係由化學氣相沈積（CVD )法所 形成的一第一絕緣層、一旋轉塗佈法所形成的旋覆式玻璃 層（Spin On Glass，SOG )以及一同樣以CVD形成的第 二絕緣層三者所構成。然而，在經後續製程的接觸窗蝕刻 (Etching )後，會產生兩個製程上須改進的問題（Process Issue )。第一，因SOG層在結構上較以CVD沈積的絕緣 層鬆散，所以經蝕刻後的SOG層往往會內凹陷，容易造成 後續黏著層（Glue Layer )，例如鈦（Ti )，塡入時形成 斷線（Disconnection );第二，SOG層在經氧氣電獎（02 / Plasma )法處理後，其SOG層極容易因水氣（Moisture ) 的產生，而引發出氣現象（Out Gassing )，造成將金屬塡 入接觸窗時，例如爲鋁，產生金屬中毒（Poison )的情況 發生。所謂的金屬中毒就是塡入的金屬結構不佳，形成糜 爛狀，而導致金屬電阻過高，將造成元件的性能產生嚴重 3 梦 i I#- (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家橾準（CNS ) A4現格（2I0X297公釐） 0,2 Α7 Β7 經濟部中央標嗥局員工消費合作社印裝 克、發明説明u ) 影響。爲改善此些缺點’已有許多解決的方案產生，例如 美國英代爾（Intel )公司提出的部份回蝕刻（PartialEtch Back，PEB )法’或聯華公司所提出的離子植入法。針對 離子植入法而言，茲舉以下所列的例子來作說明。 請參照第la〜lc圖，其繪示一種習知利用離子植入 法，其積體電路接觸窗的製程剖面圖。 首先’請參照la圖，在一已形成元件的半導體基底10 上，例如一矽基底，形成一導線12。接著，利用CVD形 成一第絕緣層14 ’例如二氧化矽層，由於導線12具一定 的高度，造成第一絕緣層I4產生不平坦的表面。然後，形 成一旋覆式玻璃層16，利用SOG層16在經一熱流後，其 所具備的流動能力，以達到平坦化的目的。 接著，請參照第lb圖，對上述的SOG層16植入一離 子，例如植入一 M ( Ar)、隣（P)、硼（Bn)或砷（As) 等離子之一。由於植入的離子可與被打斷鍵結的矽原子形 成鍵結，所以可使SOG層16的結構改變，避免上述問題 的發生。 接著，請參照第lc圖，同樣以CVD法形成一第二絕 緣層18，例如爲二氧化矽層。再利用微影程序塗佈一光阻 層，並定義出欲形成接觸窗的位置，然後利用非等向蝕刻 法依序蝕刻第二絕緣層18、旋覆式玻璃層16與第一絕緣 層Η中，未被光阻層覆蓋的部份，以形成一接觸窗20。 之後，利用氧氣電漿法剝除上述的光阻層。 最後，請參照第Id圖，在接觸窗20內塡入一金屬層 4 (請先閱讀背面之注意事項再填寫本頁) .裝. 、11 線 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐) 經濟部中央標準局員工消費合作社印製 415034 Λ7 14131^1 doc/002 Β7 五、發明説明（多） 材料22 ，以形成一導電插塞，例如利用物理氣相沈積 (PVD )法塡入一鈦、鋁或鎢之一的金屬。 雖然，以上述離子植入法所形成的金屬層接觸窗，可 改善傳統接觸窗形成時的問題，解決金屬中毒的現象，但 是植入的離子卻會破壞旋覆式玻璃層原有的鍵結結構，造 成S0G層的介電常數（Dielectric Constant )降低，因而 喪失了 S0G層低導電係數的特性。 因此，本發明的主要目的，在提供一種積體電路接觸 窗的製造方法，其可改善旋覆式玻璃層的出氣及接觸窗斷 線現象，又可保持旋覆式玻璃層低導電率的特性。 又，本發明之次要目的，可使製程窗口（ Process Window )的尺寸變大，增加製程窗口對準時的誤差的減 少。 有鑑於此，提供一種接觸窗的製造方法，包括下列步 驟： 提供一已形成元件的半導體基底，並在半導體基底上 形成一導線； 在導線上形成一金屬間介電層，包括依序形成一第一 絕緣層、一作爲平坦化的旋覆式玻璃層與一第二絕緣層； 在金屬間介電層上定義出一接觸窗圖案；並進行一離 子植入製程，使植入的離子佈植於旋覆式玻璃層中； 蝕刻金屬間介電層，包括依序蝕刻第二絕緣層、旋覆 式玻璃層與第一絕緣層，以形成一露出該導線的接觸窗。 爲讓本發明之上述和其他目的、特徵、和優點能更明 ---------裝.-----訂------線— (請先閎讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（2IOX 297公釐） 經濟部中央榡隼局員工消費合作杜印笨 415034 ! 4 I 3twt' Joc/002 _B7_ 五、發明説明（+ ) 顯易懂，下文特舉一較佳實施例，並配合所附圖式，作詳 細說明如下。 圖示之簡單說明： 第u〜id圖繪示習知一種利用離子植入法，所形成 積體電路接觸窗的製程剖面圖：以及 第2a〜2d圖繪示根據本發明之較佳實施例，一種接 觸窗的製程剖面圖。 實施例 請參照第2a〜2d圖，其繪示根據本發明之一較佳實 施例的製程流程示意圖。 首先，如第2a圖所示，在一已形成元件的半導體基底 30上，例如爲一矽基底，形成一導線32，例如由鋁（A1) 所形成的金屬層。之後，形成一第一絕緣層34，例如以化 學氣相沈積法所形成的氧化層，因爲導線32有一定的高 度*將造成所沈積的氧化層34表面產生不平坦的問題。接 著，形成一作爲平坦化的旋覆式玻璃層36，例如是利用旋 轉塗佈法所形成的氧化層，其材質例如是Allied Signal MSQ系列，使旋覆式玻璃層36塗佈後，再經過一熱處理 的步驟，利用旋覆式玻璃層36在固化前所具備的流動能 力，將沈積氧化層34後的不平坦處予以平坦化。其次，形 成一第二絕緣層38，例如同樣以化學氣相沈積法所形成的 氧化層。而上述之第一絕緣層34、旋覆式玻璃層36及第 二絕緣層38，即爲無回蝕製程（Non-Etch-Back，NEB ) 法所形成之三明治式（Sandwich Type )的一金屬間介電 6 ---------_------ΐτ------m— - (請先聞讀背面之注意事項再填寫本頁) 本紙浪尺度適用中國國家標準（CNS ) A4現格（210X297公釐） 415034 經濟部中央標準局員工消費合作杜印製 五、發明説明（爻） 層40結構。 接著，請參照第2b圖，利用微影（Photolithography ) 程序塗佈一光阻層42，並定義出欲形成接觸窗的位置44， 然後對金屬間介電層40進行離子植入，例如植入一砷、 鱗、棚或等離子之一 植入離子時，以旋轉（Rotate ) 及傾斜（Ti[t )的方式將離子植入，利用金屬間介電層40 表面與離子植入源所形成的傾斜角度0，及金屬間介電層 4〇旋轉的作用，使植入的離子在接觸窗位置44，可深植 旋覆式玻璃層36中，且植入的離子散佈面46形成錐狀， 亦即植入離子在旋覆式玻璃層36的寬度較接觸窗位置44 來得寬：而其他有光阻層42塗覆的金屬間介電層40部份 則有光阻層42擋住離子的佈植，未能將離子植入至旋覆式 玻璃層36中。此外，由於植入旋覆式玻璃層36的離子散 佈面較接觸窗位置44大，因此後續的蝕刻製程中，其製程 窗口尺寸變大，使製程窗口對準時的誤差減少。 接著，請參照第2c圖，利用非等向鈾刻法蝕刻金屬間 介電層40中，包括依序蝕刻第二絕緣層38、旋覆式玻璃 層36與第一絕緣層34，未被光阻層覆蓋的部份，以形成 一露出導線32的接觸窗48。由於旋覆式玻璃層36在欲形 成接觸窗48的部份，其結構已遭植入的離子所改變，因此 蝕刻時不會因旋覆式玻璃層36的蝕刻速率與第一及第二 絕緣層34、38不同，造成在旋覆式玻璃層36的位置產生 凹陷的現象^因此，再利用氧氣電漿法去除光阻層40時， 便不會有出氣現象的產生。 7 I r 1 n —,,ΓΓ I * 私衣 1 1 訂 ~~1 I. n ^線散 I (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家橾率（CNS ) A4現格（2]0x297公釐） A7 B7 415034 1 ^ I 3twr doc/00 2 五、發明説明（b ) 最後，請參照第2d圖，在接觸窗48內塡入一金屬層 材料50，以形成一導電插塞，例如利用物理氣相沈積法塡 入-~欽、銘或鎢等的金屬。 雖然本發明已以一較佳實施例揭露如上，然其並非用 以限定本發明，任何熟習此技藝者，在不脫離本發明之精 神和範圍內，當可作些許之更動與潤飾，因此本發明之保 護範圍當視後附之申請專利範圍所界定者爲準。 .1 I I ; I I 裝· I I ϋ ij- n ^ (讀先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 8 本紙張尺度適用中國國家榡準（CNS ) A4規格（21〇>< 297公嫠）Printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 Five 'Invention Description (丨) The present invention relates to the manufacturing process of integrated circuit components, and more particularly to a method for manufacturing a metal contact window of an integrated circuit. Contact windows are used as integrated circuit components where conductive layers (metal layers) between different layers communicate with each other. The manufacturing method is to first form an inter-metal dielectric layer (Inter-Metal Dielectric, IMD) on a first-layer conductive region, and then selectively etch the inter-metal dielectric layer to form an exposed first-layer conductive region The contact window (Contact Via), and subsequently metal material is inserted into the contact window to form a conductive plug (Plug). Next, a second layer of conductive regions is formed, and the two layers of conductive regions are connected by conductive plugs in the contact window. Generally, the intermetal dielectric layer is a first insulating layer formed by a chemical vapor deposition (CVD) method, a spin-on-glass (SOG) layer formed by a spin coating method, and The second insulating layer formed by CVD is composed of three. However, after the contact window etching (Etching) of the subsequent processes, two problems (Process Issue) which need to be improved in the process will be generated. First, because the SOG layer is looser in structure than the insulating layer deposited by CVD, the etched SOG layer tends to sag inward, which is likely to cause subsequent glue layers, such as titanium (Ti), to form during penetration. Disconnection; Secondly, after the SOG layer is processed by the oxygen electricity award (02 / Plasma) method, its SOG layer is very likely to cause out gassing due to the generation of moisture, which will cause out gassing. When metal enters the contact window, such as aluminum, metal poisoning (Poison) occurs. The so-called metal poisoning is that the metal structure that penetrates is not good and forms an erosion shape, which causes the metal resistance to be too high, which will cause the performance of the component to be severe. 3 Dream i #-(Please read the precautions on the back before filling this page) This paper size applies to China National Standards (CNS) A4 (2I0X297 mm) 0,2 Α7 Β7 The impact of the printing of inventions by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economy. A number of solutions have been developed to improve these shortcomings, such as the Partial Etch Back (PEB) method proposed by the United States Intel Corporation or the ion implantation method proposed by Lianhua Company. For the ion implantation method, the following examples are given to illustrate. Please refer to FIGS. 1a to 1c, which show a cross-sectional view of a conventional integrated circuit contact window using ion implantation. First, please refer to FIG. 1a, and form a conductive line 12 on a semiconductor substrate 10 on which an element has been formed, such as a silicon substrate. Next, a first insulating layer 14 ', such as a silicon dioxide layer, is formed by CVD. Since the conductive wire 12 has a certain height, the first insulating layer I4 has an uneven surface. Then, a spin-on glass layer 16 is formed, and the SOG layer 16 is provided with a flow capacity after a heat flow to achieve the purpose of planarization. Next, referring to FIG. 1b, an ion is implanted into the above-mentioned SOG layer 16, for example, one of M (Ar), ortho (P), boron (Bn), or arsenic (As) plasma is implanted. Since the implanted ions can form bonds with the silicon atoms that have been broken, the structure of the SOG layer 16 can be changed to avoid the above problems. Next, referring to FIG. 1c, a second insulating layer 18, such as a silicon dioxide layer, is also formed by the CVD method. Then, a photoresist layer is applied by using a lithography program, and a position where a contact window is to be formed is defined. Then, the second insulating layer 18, the spin-on glass layer 16 and the first insulating layer are sequentially etched by an anisotropic etching method. In the embodiment, the portion not covered by the photoresist layer forms a contact window 20. After that, the above-mentioned photoresist layer is stripped by an oxygen plasma method. Finally, please refer to the Id diagram, insert a metal layer 4 into the contact window 20 (please read the precautions on the back before filling this page). The size of the 11-line paper is applicable to the Chinese National Standard (CNS) A4 specification (210X297 mm) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 415034 Λ7 14131 ^ 1 doc / 002 B7 V. Description of the invention (multi) Material 22 to form a conductive plug, for example, using physical vapor deposition (PVD) The method incorporates a metal of one of titanium, aluminum, or tungsten. Although the metal layer contact window formed by the above-mentioned ion implantation method can improve the problems of traditional contact window formation and solve the phenomenon of metal poisoning, the implanted ions can destroy the original bonding of the spin-on glass layer. Due to the structure, the dielectric constant of the SOG layer is reduced, and the low conductivity of the SOG layer is lost. Therefore, the main object of the present invention is to provide a method for manufacturing an integrated circuit contact window, which can improve the out-gassing of the spin-on glass layer and the disconnection of the contact window, while maintaining the low conductivity of the spin-on glass layer. . In addition, a secondary object of the present invention is to increase the size of the process window and increase the reduction of errors during the process window alignment. In view of this, a method for manufacturing a contact window is provided, including the following steps: providing a semiconductor substrate on which a component has been formed, and forming a conductive line on the semiconductor substrate; forming an intermetal dielectric layer on the conductive line, including sequentially forming a A first insulation layer, a planarized spin-on glass layer, and a second insulation layer; a contact window pattern is defined on the intermetal dielectric layer; and an ion implantation process is performed to make the implanted ion cloth Implanted in the spin-on glass layer; etching the intermetal dielectric layer includes sequentially etching the second insulation layer, the spin-on glass layer and the first insulation layer to form a contact window exposing the wire. In order to make the above and other objects, features, and advantages of the present invention clearer ------------ install .----- order ------ line-- (Please read the note on the back first Please fill in this page again for this matter) This paper size is applicable to the Chinese National Standard (CNS) A4 specification (2IOX 297 mm). The consumer cooperation of the Central Government Bureau of the Ministry of Economy Du Yinben 415034! 4 I 3twt 'Joc / 002 _B7_ V. Description of the invention (+) It is easy to understand. A preferred embodiment is exemplified below, and it will be described in detail with the accompanying drawings. Brief description of the figures: Figures u ~ id show cross-sectional views of a conventional integrated circuit contact window formed using ion implantation: and Figures 2a ~ 2d show preferred embodiments according to the present invention. , A cross-sectional view of the manufacturing process of a contact window. Embodiments Please refer to Figs. 2a to 2d, which are schematic diagrams illustrating a process flow according to a preferred embodiment of the present invention. First, as shown in FIG. 2a, a conductive substrate 32, such as a metal layer formed of aluminum (A1), is formed on a semiconductor substrate 30 on which an element has been formed, for example, a silicon substrate. After that, a first insulating layer 34 is formed, such as an oxide layer formed by a chemical vapor deposition method, because the wire 32 has a certain height * will cause unevenness on the surface of the deposited oxide layer 34. Next, a planarized spin-on glass layer 36 is formed, for example, an oxide layer formed by a spin coating method, and the material is, for example, an Allied Signal MSQ series. The spin-on glass layer 36 is coated and then passed through. A heat treatment step uses the flow ability of the spin-on glass layer 36 before curing to flatten the unevenness after the oxide layer 34 is deposited. Next, a second insulating layer 38 is formed, such as an oxide layer also formed by a chemical vapor deposition method. The first insulating layer 34, the spin-on glass layer 36, and the second insulating layer 38 are a sandwich type (Sandwich Type) metal formed by a non-etchback process (Non-Etch-Back, NEB) method. Dielectric 6 ---------_------ ΐτ ------ m—-(Please read the precautions on the reverse side before filling out this page) This paper is suitable for China Standard (CNS) A4 is now available (210X297 mm) 415034 The consumer cooperation of the Central Bureau of Standards of the Ministry of Economic Affairs has been printed. 5. Description of Invention (发明) Layer 40 structure. Next, referring to FIG. 2B, a photoresist layer 42 is applied using a photolithography program, and a position 44 where a contact window is to be formed is defined. Then, the intermetal dielectric layer 40 is ion implanted, for example, implanted. When ions are implanted in one of arsenic, scales, sheds, or plasma, the ions are implanted in a Rotate and Ti [t] manner. The surface formed by the intermetallic dielectric layer 40 and the ion implantation source The inclination angle 0 and the rotation of the intermetallic dielectric layer 40 allow the implanted ions to be in the contact window position 44 to be deeply implanted in the spin-on glass layer 36, and the implanted ion spreading surface 46 is formed into a cone shape. That is, the width of the implanted ions in the spin-on glass layer 36 is wider than the contact window position 44: while other intermetal dielectric layers 40 coated with the photoresist layer 42 have a photoresist layer 42 to block the ions. Implanted, and failed to implant ions into the spin-on glass layer 36. In addition, since the ion scattering surface of the implanted spin-on glass layer 36 is larger than the contact window position 44, the size of the process window in the subsequent etching process becomes larger, and the error in the alignment of the process window is reduced. Next, referring to FIG. 2c, the non-isotropic uranium etching method is used to etch the intermetal dielectric layer 40, including sequentially etching the second insulating layer 38, the spin-on glass layer 36, and the first insulating layer 34. The portion covered by the resist layer forms a contact window 48 that exposes the wires 32. Because the structure of the spin-on glass layer 36 is changed by the implanted ions at the portion where the contact window 48 is to be formed, the etching rate of the spin-on glass layer 36 and the first and second insulations will not be changed during the etching. The layers 34 and 38 are different, which causes a depression at the position of the spin-on glass layer 36. Therefore, when the photoresist layer 40 is removed by an oxygen plasma method, no outgassing will occur. 7 I r 1 n — ,, ΓΓ I * Private clothing 1 1 Order ~~ 1 I. n ^ 线 散 I (Please read the precautions on the back before filling this page) The paper size is applicable to the Chinese national rate (CNS) A4 is now (2) 0x297 mm. A7 B7 415034 1 ^ I 3twr doc / 00 2 V. Description of the invention (b) Finally, referring to Figure 2d, insert a metal layer material 50 into the contact window 48 to A conductive plug is formed, for example, a metal such as Chin, Ming, or tungsten is inserted by physical vapor deposition. Although the present invention has been disclosed as above with a preferred embodiment, it is not intended to limit the present invention. Any person skilled in the art can make some modifications and retouching without departing from the spirit and scope of the present invention. The scope of protection of the invention shall be determined by the scope of the attached patent application. .1 II; II equipment · II ϋ ij- n ^ (Read the precautions on the back before filling this page) Printed by the Employees' Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 8 This paper size applies to China National Standards (CNS) A4 (21〇 > < 297 gongs)