TW408377B - Method for manufacturing semiconductor devices - Google Patents
Method for manufacturing semiconductor devices Download PDFInfo
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- TW408377B TW408377B TW088104796A TW88104796A TW408377B TW 408377 B TW408377 B TW 408377B TW 088104796 A TW088104796 A TW 088104796A TW 88104796 A TW88104796 A TW 88104796A TW 408377 B TW408377 B TW 408377B
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- gate electrode
- dielectric layer
- substrate
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- manufacturing
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Links
- 238000000034 method Methods 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000004065 semiconductor Substances 0.000 title claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 24
- 125000006850 spacer group Chemical group 0.000 claims abstract description 22
- 229910044991 metal oxide Inorganic materials 0.000 claims abstract description 10
- 150000004706 metal oxides Chemical class 0.000 claims abstract description 10
- 239000000463 material Substances 0.000 claims description 18
- 230000002079 cooperative effect Effects 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- 238000000059 patterning Methods 0.000 claims description 2
- KZNMRPQBBZBTSW-UHFFFAOYSA-N [Au]=O Chemical compound [Au]=O KZNMRPQBBZBTSW-UHFFFAOYSA-N 0.000 claims 4
- 239000013078 crystal Substances 0.000 claims 2
- 238000005530 etching Methods 0.000 claims 2
- 238000009434 installation Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 4
- 238000000151 deposition Methods 0.000 abstract description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000002955 isolation Methods 0.000 description 2
- 230000003071 parasitic effect Effects 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000012856 packing Methods 0.000 description 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000004575 stone Substances 0.000 description 1
- 238000001039 wet etching Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4983—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material
- H01L29/4991—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET with a lateral structure, e.g. a Polysilicon gate with a lateral doping variation or with a lateral composition variation or characterised by the sidewalls being composed of conductive, resistive or dielectric material comprising an air gap
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/6656—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using multiple spacer layers, e.g. multiple sidewall spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Description
4484twt',doc/000 A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明(/ ) 本發明是有關於一種金氧半電晶體的製造方法,且特 別是有關於一種降低閘極到汲極的電容之金氧半電晶體 的製造方法。 習知當金氧半電晶體完成後,會於其上方覆蓋一層氧 化物做電性隔離,而氧化物的介電常數約在3.8〜4.0之間 左右。然而隨著元件尺寸的縮小,以及對資料傳輸速度要 求要愈來愈快的情況下,若僅以氧化物做爲閘極電極和源 極/汲極區之間的電性隔離,會產生嚴重之聞極電極到汲 極(Gate-to-dram)之寄生電容的問題,進而影響元件 的效能。 因此,本發明提供一種金氧半電晶體的製造方法,包 括:提供一基底,其上已形成閘極電極,且閘極電極兩側 的基底中已形成第一摻雜區;於閘極電極兩旁的基底上形 成具有第一厚度的第一介電層,並使其上表面低於閘極電 極的上表面;接著於閘極電極側壁形成第一間隙壁;並以 此第一間隙壁和閘極電極爲罩幕,剝除部份第一介電層至 剩餘一第二厚度;於閘極電極側壁之第一間隙壁外’形成 第二間隙壁;以第二間隙壁和閘極電極爲罩幕’將第一介 電層圖案化至暴露出基底;以第二間隙壁和聞極電極爲罩 幕,以於基底中形成第二摻雜區’第二摻雜區和第一摻雜 區構成源極/汲極區;剝除第一介電層;以及於閑極電極 上沈積第二介電層,以大約於該第一和第二間隙壁下方形 成一孔洞。 依照本發明的一較佳實施例,第一介電層的材質不同 3 本紙張尺度逋用中國國家揉準(CNS ) A4規格(210X297公釐) ----.--r----裝------^------^ (請先閲讀背面之注意事項再填寫本頁) 408^7*7 經濟部中央標準局員工消費合作杜印製 4484twt'.doc/006 A 7 B7 五'發明説明()) 於第一和第二間隙壁的材質,第一介電層的材質包括氮化 矽,第一和第二間隙壁的材質包括氧化矽。 本發明於閘極電極和源極/汲極區之間佈局一具有低 介電常數的孔洞,故可以降低閘極電極和源極/汲極區之 間的電場,且可以降低閘極電極和源極/汲極區間之介電 層的介電常數,因此可以降低閘極電極到汲極區的寄生電 容效應。 爲讓本發明之上述和其他目的、特徵、和優點能更明 顯易懂,下文特舉較佳實施例,並配合所附圖式,作詳細 說明如下: 圖式之簡單說明: 第1A圖至第1E圖係繪示根據本發明較佳實施例之一 種金氧半電晶體的製造流程剖面圖。 其中,各圖標號與構件名稱之關係如下_· 100 :基底 104 :閘極氧化層 106 :閘極電極 102、114 :摻雜區 116 :源極/汲極區 108、108a、108b、lQ8c、118 :介電層 120、122 ··厚度 110、112 :間隙壁 124 :孔洞 實施例 4 本紙張尺度i最用中國國家標準(CNS ) A4規格(210X297公爱] I.-----------^------1T------0 (請先閱讀背面之注意事項再填寫本頁) 408377 A7 4484twf.doc/006 五、發明説明(彡) 第1A圖至第1E圖所示,爲根據本發明一較佳實施例 之一種金氧半電晶體的製造流程剖面圖。 首先請參照第1A圖,提供一基底100,比如是半導體 矽基底,於基底100上依序形成已完成圖案化之閘極氧化 層104和閘極電極106,其中閘極電極106的材質比如是 複晶矽、非晶矽或其他類似此性質者,再以閘極電極106 爲離子植入罩幕,以於聞極電極106兩側下方的基底100 中形成摻雜區102,比如是較低濃度的摻雜區,所摻雜的 離子端看欲形成之金氧半電晶體爲N型或P型而定。之 後’於閘極電極106上形成一層已平坦化的介電層108, 其平坦化的方法比如是化學機械硏磨法,其材質比如是氧 化石夕。 接著請參照第1B圖,剝除部份介電層108,至其剩餘 的厚度120約爲1500埃至2000埃,以形成如圖示之介電 層108a,其剝除的方法比如是非等向性的回蝕刻製程。續 於閘極電極106的側壁形成間隙壁11〇,其材質須異於介 電層108a,間隙壁110的材質比如是氮化矽。 接著請參照第1C圖,以閘極電極106和間隙壁110 爲罩幕,蝕刻介電層108a,至其剩餘的厚度122約爲500 埃至1000埃,以形成如圖所示之介電層1〇8b。並繼續在 閘極電極106側壁的間隙壁110外形成間隙壁112,其材 質須異於介電層l〇8b,可與間隙壁110的材質相同,間隙 壁112的材質比如是氮化矽。 請參照第1D圖,以閘極電極106和間隙壁112爲罩 5 本張^適用CNS ) ( 2 丨 0X297公釐) '"~~ 5 ( I u n 訂 II , 線 (請先閱讀背面之注^K項再填寫本頁) 經濟,邓中央標準局員工消費合作社印製 經濟部中央標準局員工消費合作杜印製 408377 4484twf.doc/006 A 7 B7 五、發明説明(分) 幕,蝕刻介電層108b,至暴露出閘極氧化層104的表面, 以形成如圖所示之介電層108c。再以閘極電極丨06和間隙 壁112爲離子植入罩幕,於基底100中形成摻雜區114, 比如是較高濃度的摻雜區,所摻雜的離子同於摻雜區 1〇2。其中摻雜區102和114即爲源極/汲極區116。 接著靖參照第1E圖,將間隙壁110和112下方的介 電層108c予以剝除,其方法比如是用濕蝕刻法,所使用 的蝕刻劑比如是熱磷酸。之後,於閘極電極106上方沈積 一層介電層118,其材質比如是氧化物,在沈積的期間, 介電材質不會完全塡入間隙壁110和112下方的空間中, 因此會於其中形成孔洞124。 由於孔洞124中的空氣之介電常數爲1,0,故可以降 低閘極電極106和源極/汲極區116間之介電層118的介 電常數,因此可以降低閘極電極到汲極區的電容效應,進 而提高閘極電極的操作效能,且可以改善元件之電路的速 度。 本發明的特徵如下: 1. 本發明於閘極電極和源極/汲極區之間佈局一低介 電常數的孔洞,故可以降低閘極電極和源極/汲極區之間 的邊緣電場。 2. 由於閘極電極和源極/汲極區之間的孔洞中之空氣 的介電常數爲1.0,故可以降低閘極電極和源極/汲極區間 之介電層的介電常數,因此可以降低閘極電極到汲極區的 電容效應。 6 本適用中國國家標準(CNs7a4規格(210X297公釐) — (諳先閱讀背面之注意事項再填寫本頁) 裝- *?τ 408077 4484twf.doc/006 A7 B7 五、發明説明(爻) 雖然本發明已以較佳實施例揭露如上,然其並非用以 限定本發明,任何熟習此技藝者,在不脫離本發明之精神 和範圍內,當可作各種之更動與潤飾,因此本發明之保護 範圍當視後附之申請專利範圍所界定者爲準。 裝 訂 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央搮準局員工消費合作社印裝 本紙張尺度適用中國國家揉準(CNS ) A4规格(210X2?7公釐)
Claims (1)
- 經濟部中央標隼局員工消費合作社印製 408C77 A8 4484—/006 D8 六、申請專利範圍 1. 一種金氧半電晶體的製造方法,包括: 提供一基底,該基底上已形成一閘極電極,且該閘極 電極兩側的該基底中已形成一第一摻雜區; 於該閘極電極兩旁的該基底上形成具有一第一厚度 的一第一介電層,該第一介電層的上表面低於該閘極電極 的上表面; 於該閘極電極側壁形成一第一間隙壁; 以該閘極電極和該第一間隙壁爲罩幕,剝除部份該第 一介電層至剩餘一第二厚度; 於該閘極電極側壁之該第一間隙壁外,形成一第二間 隙壁; 以該第二間隙壁和該閘極電極爲罩幕,將該第一介電 層圖案化至暴露出該基底; 以該第二間隙壁和該閘極電極爲罩幕,以於該基底中 形成一第二摻雜區,該第二摻雜區和該第一摻雜區構成一 源極/汲極區; 剝除該第一介電層;以及 於該閘極電極上沈積一第二介電層。 2. 如申請專利範圍第1項所述之金氧半電晶體的製 造方法,其中該第一介電層的材質不同於該第一和第二間 隙壁的材質。 3. 如申請專利範圍第2項所述之金氧半電晶體的製 造方法,其中該第一介電層的材質包括氮化矽,該第一和 第二間隙壁的材質包括氧化矽。 8 --------—裝------1J-----線 (請先閱讀背面之注意事項再填寫本I) 本紙張尺度逋用中國國家梂準(CNS > A4規格(210X297公釐) 經濟部中央標準局員工消費合作社印製 40B3V7 A8 B8 4484twf.doc/006 Qg D8 六、申請專利範圍 4. 如申請專利範圍第1項所述之金氧半電晶體的製 造方法,其中於該閘極電極兩旁的該基底上形成該介電層 的方法,包括:於該閘極電極上形成已平坦化的一層介電 物質;以及進行一回蝕刻製程。 5. 如申請專利範圍第1項所述之金氧半電晶體的製 造方法,其中該第一厚度約爲1500埃至2000埃,該第二 厚度約爲500埃至1000埃。 6. —種金氧半電晶體的製造方法,包括: 提供一基底,該基底上已形成一閘極電極,且該閘極 電極兩側的該基底中已形成一第一摻雜區; 於該閘極電極兩旁的該基底上形成具有一第一厚度 的一第一介電層,該第一介電層的上表面低於該閘極電極 的上表面; 於該閘極電極側壁形成一第一間隙壁; 以該閘極電極和該第一間隙壁爲罩幕,剝除部份該第 一介電層至剩餘一第二厚度; 於該閘極電極側壁之該第一間隙壁外,形成一第二間 隙壁; 以該第二間隙壁和該閘極電極爲罩幕,將該第一介電 層圖案化至暴露出該基底; 剝除該第一介電層;以及 於該閘極電極上沈積一第二介電層,以大約於該第一 和第二間隙壁下方形成一孔洞。 7. 如申請專利範圍第6項所述之金氧半電晶體的製 9 (請先閲讀背面之注意事項再填寫本f ) 丨裝- 、vs 線 本紙張尺度適用中國國家標準(CNS ) A4現格(210X297公釐) 4484twf.d〇! 4J38377 A8 B8 C8 D8 申請專利範圍 第二間 造方法, 隙壁的材質。 8. 如申請專利範圍第7項所述之金氧半電晶體的製 造方法,其中該第一介電層的材質包括氮化矽,該第一和 第二間隙壁的材質包括氧化矽。 9. 如申請專利範圍第6項所述之金氧半電晶體的製 造方法,其中於該閘極電極兩旁的該基底上形成該介電層 的方法,包括:於該閘極電極上形成已平坦化的一層介電 物質;以及進行一回蝕刻製程。 10. 如申請專利範圔第6項所述之金氧半電晶體的製 造方法,其中該第一厚度約爲1500埃至2000埃,該第二 厚度約爲500埃至1000埃。 ---------¾.------ΐτ------^ (請先鬩讀背面之注意事項再填寫本頁) 經濟部中央標準局負工消費合作社命製 !ΰ 本紙張尺度逋用中國國家標準(CNS ) Α4規格(2Ι0Χ297公釐)
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