TW403775B - Amorphous satruated hydrocarbon thermoplastic substrate - Google Patents

Amorphous satruated hydrocarbon thermoplastic substrate Download PDF

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Publication number
TW403775B
TW403775B TW087116082A TW87116082A TW403775B TW 403775 B TW403775 B TW 403775B TW 087116082 A TW087116082 A TW 087116082A TW 87116082 A TW87116082 A TW 87116082A TW 403775 B TW403775 B TW 403775B
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substrate
patent application
scope
item
polymer
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TW087116082A
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Stephen F Hahn
Mark D Newsham
William G Lutz
Leonardo C Lopez
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Dow Chemical Co
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Description

經濟部智慧財產局員工消費合作社印製
4037Ϊ5 Α7 "---- - Β7 ___ 五、發明說明（1) 本發明係有關一種具有改良黏著性質之非晶形飽和烴 熱塑性基材。 非晶形飽和烴熱塑性材料（諸如，聚乙烯基環己烷） 已被發現可用於各種不同之應用，包含多層或層合物件， 諸如，光碟介質。此等多層或層合之物件典型上包含一層 氫化芳族聚合物及另外一層金屬或聚合材料。但是，先前 之於塗覆金屬或聚合物至此氫化芳族聚合物表面之努力造 成差的黏著性。
Tanaka等人之JP-4-335009號案揭示一種對於記錄膜 層具有增加之黏著性之氫化之羥基取代之苯乙烯共聚物。 但是，此共聚物並非可商業上使用者，且典型上係藉由昂 貴之多步驟方法獲得。
Kato等人之JP_3_59833號案揭示具有改良黏著性之氫 化乙烯基芳族聚合物光碟基材，其係以硫酸及鉻酸之混合 溶液處理該基材，而Kato等人之jp_3_59832號案揭示一種 使用煙Μ酸之相似方法。但是，此等濕腐财法係危險 且可態導致裝置之降解。.
Suga等人之uS-A-5,073,427號案揭示一種以含氟之氣 體處理之光碟表面，以改良對形成於其上之記錄層之黏著 性。但是’此方法係不實際，因从係有毒且具腐姓性， 且鼠既酸被以副產物產生。 因此，仍有一種對於具有被促進之黏著性之非晶形飽 和烴熱塑性基材之需求，其中，該被促進黏藉性係藉由有 效率之方法獲得，而無需使用或產生濕腐蝕性物質，其等 本紙張尺度週财_家標準⑽χ撕公复） (.請先閲讀背面之注意事項再填寫本頁.)
、發明說明（2) 會造成裝置之降解。 、本發明係一種具有被促進黏著性質之非晶形飽和烴熱 塑性基材’其中，該被促進之黏著性質係藉由以激發氣相 技術處理該非晶形飽和烴熱塑性基材之表面而獲得之，如 此，至少35 dyne/咖之臨界表面能量被獲得，而無使用酸 或其它腐蝕性材料，其等會造成裝置之降解。 激發氣相技術能改良金屬或聚合物對基材之黏著性， 而無需使用腐飯性或有毒之材料，其等會造成裝置之降解 。此等方法於促進金屬對由聚環己基乙烯（PCHE,)製成 之光學介質碟片之黏者性特別有利。 本發明係一種對金脣或聚合材料具有改良黏著性之非 晶形飽和烴熱塑性基材。 本發月之碟片係由非晶形飽和煙熱塑性材料製得。餘 和一辭係指化學結構内之烯烴鍵之量。如此處所用者，飽 矛係扣其間少於丨〇%之碳-碳鍵係烯烴或不飽和性質之聚 合物，一般係少於7·5%，典型上係少於5%，有利者係1 於2%，更有利者係少於丨5%，較佳係少於丨％，更佳係少於 〇·5%且最佳係少於〇·2。此等形式之聚合物包含氫化之芳 族聚合⑯、環烯烴共聚物及氮化開環複分解聚合物。 虱化芳族聚合物包含含有其後被氫化之側芳族官能性 之任何聚合材料。侧芳族係指其間芳基係聚合物主幹上之 取代基且未被埋於其間之結構。較佳之芳基係c6.20之芳基 ，特別是苯基。此等聚合物除芳基外亦可含有其烯煙基。 幸乂佳者，聚合物係衍生自如下化學式之單體·· 403ϊ75 A7 B7 五、發明說叼（3 ) 經濟部智慧財產局員工消費合作社印製
Ar—C=CH2 其中，R’係氫或烷基，Ar係苯基、鹵苯基、烷基苯 基、烷基鹵苯基、萘基、吡啶基、anthracenyl，其中任 何烷基含有1至6個碳原子，其可以諸如鹵素、硝基、胺基 、氰基、羰基及羧基之官能基作單一取代或多取代。更佳 者’ Ar係苯基或烷基苯基，而以苯基為最佳 ' 可被使用 之典型乙烯基芳基單體包含苯乙烯、α _甲基苯乙烯所 有乙嫦基甲本異構物，特別是，對乙稀基甲苯，所有乙基 苯乙烯、丙烯苯乙烯、乙烯基雙苯基、乙烯基萘、乙烯基 anthracene之異構物及其等之混合物。均聚物可為任何立 體結構，包S間規、全同或無規；但是，.無規聚合物較佳 。此外’含有此等芳族單體之氫化共聚物包含無規、準無 規 ' 嵌段或接枝之共聚物，其可被依據本發明使用者。例 如，乙烯芳族單體及選自睛、丙烯酸醋、酸、乙稀、丙稀 、馬來酸酐、馬來醯亞胺、乙烯基乙酸酯及氣乙烯之共單 體可被使用之。乙烯基芳族單體及諸如丁二稀、異間戊二 烯之共輛·一.烯之氫化嵌·段共聚物亦芽被使用之β例子包含 苯6烯-丁二烯、苯乙烯-異間戊二烯、苯乙稀_ 丁二稀-苯 乙烯及苯乙烯-異間戊二烯-苯乙烯之共聚物。嵌段共聚物 之進一步例子可於美國專利第4,845,173、4,096,203、 4,200,718 ; 4,210,729 ^ 4,205,016 > 3,652,516 ^ 3,734,973 、3,390,207、3,231，635及3,030,346號案中發現之。此等 氫化聚合物與其它包含含有芳族聚合物之衝擊改質接枝橡 (請先閲讀背面之注拳項再填寫本頁) 裝 -訂.· ! — II — ！線rr — I I— rul· — — — ϋ n - 經濟部智慧財產局員.工消費合作社印製 403775 A7 一 B7 五、發明說叼（4 ) 膠聚合物之摻合物亦可被使用之。較佳者，氫化芳族聚合 =係如US-A-5,700,878號案所述之以氫化無規聚苯乙婦製 得之聚乙烯基環己烷（PVCH)。 被氫化之芳族聚合物之重量平均分子量（Mw)典型 上係10,000至3，_，_，更佳係_，〇〇.】，〇〇〇，_，最 佳係 100,000 至 500,000。 環烯烴共聚物係如 US-A-5，115,〇41、US-A-5,142,007 及US-A-5,丨43，979號案所述之諸如降冰片二烯型式之聚合 物之聚合環烯烴單體。環烯烴部份可被取代或未被取代 。適g之環烯烴單體包含取代或未被取代之降冰片二烯、 二環戊二烯、二氫二環戊二烯、環戊二烯之三聚物、四環 十二烯、六環十七烯、亞乙烯基降冰片二烯及乙烯基降冰 片二烯。環烯烴單體上之取代基包含氫、^至加個碳原子 之烷基、烯基及芳基，及2至12個碳原子之飽和及未飽和 環基’其可形成一或多個（較佳係二）之碳原子。一般而 s，裱烯烴單體上之取代基可為任何不毒化聚合反應催化 劑或使其失去活性者。較佳單體之例子包含二環戊二烯、 甲基四環十二烯、2_降冰片二烯及其它降冰片二烯單體， 諸如5-曱基—2-降冰片二烯、5,6_二甲基_2_降冰片二烯、 5,6-二甲基-2-降冰片二烯、5_乙基_2降冰片二烯、5亞乙 烯基-2-降冰片二烯、5_ 丁基_2_降冰片二烯、5_己基_2_降 冰片一烯、5-辛基-2-降冰片二烯、5_苯基_2_降冰片二烯 、5-十二基_2_降冰片二烯、5異丁基_2降冰片二烯、5_ 十八基-2-降冰片二烯、5_異丙基_2降冰片5對甲苯基_2_ 1 本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297,公釐） -----~~—---— C請先閲讀背面之注意事項再填寫本頁)
經濟部智慧財產局員工消費合作社印製
降冰片二婦、5-α-笑其o it女 τ基降冰片二烯、5-環己基-2-降冰 片二烯、5-異丙基降、士 μ t 降冰片二烯、5-乙烯基降冰片二 歸、5,5 - 一曱基-2-降冰 _ 水片——烯、三環戊二烯（或環戊二烯 聚物）、四核戍二埽（或環戊二烯之四聚物）二氫二 環戊二稀（或伸環戊基環戊二烯共二聚物）、甲基-環戊二 烯二聚物、乙基_環戍_ 叹—埤一聚物、四環十二烯9-甲基四 環[6,2，1，13 6〇2.7|十一桷 4 ’ 』卞—烯~4(或甲基四環十二烯）、9-乙基-四 環[6,2，1，136〇2·7·| 十二、嫌， 廊4(或乙基四環十二烯）、9-己基-四 %[6’2,1，13.6〇2.7]十二稀_49八甘 β , 邱4，y_癸基四環[Μ，〗，！3.6。2.7]十二 埽-4、9-癸基四環[⑵/响]十二稀_4、9，1〇二甲基_ 四環[6,2，1，13 6〇2.7·]十 _、法 』卞—烯-4、9-曱基-10-乙基-四環 [6,2，1，13 6〇2.7]十二烯 _4、9 環己基四環^ 6〇2 7]十 二烯-4、9-氯·四環[6,2，u3,6〇2.7]十二烯_4、9演四環 [6’2’I’I36G27]十二烯 _4、9_ 氣四環十二稀 _今 、9-異丁基四則十二烯_4及9，1〇二氣四環 [6,2，1，13·6〇2·η 十二烯 _4。 含有二或多種不同型式之單體之聚合物亦適合。例如 ，f基四環十二烷（MTD)及f基降冰片二烯（ΜΝΒ)之共聚 物係特別適合。更佳者，聚合物係含有三或更多種型^之 單體單元（例如，三聚物，其含有MTD、ΜΝΒ及二環戊 二烯(DCPD))。 開環複分解聚合物包含以降冰片二烯或四環十二稀之 複分解開（共）聚合反應製備之聚合物，諸如，j85/26 Μ# 及118-八-5,053,471號案中所述者。
本紙張尺度適用中國國家標準（CNS)A4規格（21〇 X 297公釐） (請先閱讀背面之注意事項再填寫本頁).
經濟部智慧財產局員工消費合作社印製 403775 五、發明說明（6 ) 用於本發明之氫化聚合物包含如上所述之任何氫化聚 合，其已被氫化至至少80%芳基氫化之程度，一般係至少 85 /。，典型係至少9〇%，有利者係至少％%，更有利者係 至少98% ’較佳係至少98%，更佳係至少99·5%，最佳係 至少99.8%。氫化芳族聚合物之方法係業界已知，諸如 及Hucul之U.S. 5,7〇0,878號案中所述者，其中芳族聚合物 係藉由使芳族聚合物與氩化劑於矽石支撐之金屬氮化催化 "劑（具有窄孔徑大小分佈及大孔徑）存在中接觸而製備之 。氫化狀烯烴及開環之複分解聚合物之方法係業界已知， 且描述於先前引述之專利案。 上述之氫化芳族聚合物可以各種不同應用使用之，包 含各種不同之模製產物，諸.如，光學介質碟片。模製方法 係業界已知’且包含壓縮及注模。典型上，模製溫度係2〇〇 與300°C之間，較佳260與300。(：之間。 為促進非晶型飽和烴之熱塑性基材之黏著性，模製基 材之表面使用激發之氣相技術處理之，如此，臨界表面能 量至少35(典型係至少38，一般係至少4〇，較佳係至少43 ，更佳係至少45，最佳係至少50) dyne/cm，至85(較佳 係80，更佳係75，最佳係7〇)dyne/cm。臨界表面能量一般 係藉由表面與液體（或氣體）間之界面關係決定之，其係 於 (第 5版，Arthur w. Adam_，
Interdceience，New York，Ν γ 199〇)及“界面性質”（ Jeffrey T. Koberstein,^^ 科學及技彳第2版 ，1987，第8冊，272-275)中探討之。 (請先閲讀背面之注意事項再填寫本頁). 裝 訂·- 9 A7 B7 403775 五、發明說明（7) (請先閱讀背面之注意事項再填寫本頁). 激愈之氣相技術係業界已知且包含日晕放電、電嘴、 火焰及臭氧處理。此等技術利用氣體流，其係與高能量源 (諸如’高能量電子放電、振盪波、波、雷射及無線電頻 率）接觸。與高量源接觸時，數個相對高能量之離子及及 基團形成於氣體内’其能與聚合物表面反應，改.變表面結 構。此等技術能處理非常薄之表面層，如此，聚合物之整 體性質不被不利影響。氣體之性質及其激發之方式可被用 以控制表面被改質之程度。此等方法係描述於諸如之，，聚 乙婦表面與空氣漿之下游產物之反應：氣相及表面之光譜 研究”，聚合物科學期刊：A部份：聚合物化學，第34冊，2299_ 2310 ((I960)，Kill，Hunter及Mcintyre)、”聚合物之遙遠氮 電漿處理：聚乙烯，耐綸6,6,聚（伸乙基乙烯基醇）及聚( . '. ' . . 對笨一甲酸乙二醇”，聚合物科學期刊：第A部份：聚合物化 學，第 30冊，279-286 (1992)(Foerch及Hunter)、”藉由使用氣 相衍生之日暈放電處理之聚乙烯表面之E.sca.研究，，，聚 合物，第 26冊，1162-1166，.（1985)(Gerenser等人）及，，應用於 I合物之ESCA，XXII，純氧及氦-氧辱.合物中之聚合物之 RF生長放電”，聚合物科學期刊：聚合物化學版，第17冊， 經濟部智慧財產局員工消費合作社印製 957-976 (1979) (Clark及Dilks)等參考資料。 電漿係藉由將氣體於材料中之分子被分解及離子化之 條件下曝於高能量源所產生之主負電荷粒子集合物。典型 上’氣體被用以藉由使其接受高能量電子電荷形成電漿， 雖然’其它來源（例如.，振盪波、微波、電射等）亦可被 使用之.。用以形成電锻之氣體可廣.泛變化之，且可·包含氧 h紙張尺度適用申國國家標準（CNS)A4規格（210 X 297公楚i 五、 經濟部智慧財產局員工消費合作社印製 (210 x 297 ^ γ Α7 Β7 發明說明（8) 、氮、氬、氦及氨。典型上，電漿處理係於使用氧、氣或 氬為氣體之真空下進行之。電漿處理係於”Plasma Technology”Kirt-Othmer Encyclopedia of Chemical Igghnoloax^第 3版，補充本，599頁，1984及，’ESCA Applied to Polymers, XVIII,, RF Glow Discharge Modification of
Polymer in Helium，Neon, Argon and Krypton”，D_T. Clark, A. Dilks, Journal of Polymer Science: Polymer Chemistry
Edition,第16冊，第911頁（1978)探討之。 ' . .. . ... 曰暈之處理係包含使氣體流通過高能量電子弧，其差 生高能量基團及離子性物種。當此以曰暈處理過之氣體接 觸聚合物表面時，其會導致表面上之反應，而改變表面結 構。雖然電漿係分離形式之材料（解離離子組成），日暈簡 單地產生一些高能量物種，其以氣體流移除之，所用之氣 體、日暈裝置、曝露之時間及它因子可被用以控制表面被 改質之程度。此外’聚合物表面之化學結構控制可發生及 決定因而製得之表面之結構之反應。典型上，於此方法中 所用之氣體包含氧、氮、氬及空氣。 火焰處理包含於聚合物表面施以火焰。火焰係高氧化 環圪’其包含燃蚪及氧之混合物，產生各種不同之激發態 離子及基團物種。此強的氧化環境可影響聚合物表面結構 之變化。火焰之性質、燃料源、曝露之時間及聚合物之結 構係對於最終產物之結構有影響之變數。 臭氧處理包含使氫化之芳族聚合物基材曝於臭氧。臭 氧可藉由數種方法產生之，諸如，將空氣或氧以日暈或電 11 (請先閱讀背面之注$項再填寫本頁)
經濟部智慧財產局員工消費合作社印製 403ΪΤ5 a? —---— -— B7 _ ...... ...... 五、發明說明（9) 漿處理，及使空氣接受紫外線輻射。此等方法藉由使二原 子之氧(02)分裂成氧原子且然後與二原子氧結合而產生之 。於接近聚合物表面產生之臭氧可與表面反應而造成化學 改質。 臭氧之產生及處理進一步於Kirk-Othmer P.ncvcl〇t)ed; a 第 3版，第 16冊，1981，（John Wiley & Sons)探討之。 激發氣相技.術典型上係施用於非晶型飽和.烴熱塑性基 材一足夠時間以使表面化學性被改質且獲得促進之黏著 性。所需之時間量係依所涉及材料、激發氣體相技術及基 材之置放而定_ 本發明之處理過之聚合物基材對其它材料（諸如，金 屬及其它聚合物）具有促進之黏者性。適於黏著之金屬包 含對非型飽和烴熱塑性基材為惰性之任何金屬，諸如，稀 土過渡金屬、紹、銅、鉻、鎳、鈦、銀、金及其等之合金 、亂鐵鈷合金、軾鐵鈷合金、鉞鐵合金、鎵銻合金、銦綈 或含有過波金屬及稀土元素之四級合金。較佳者，金屬係 銘。多層金屬亦可被使用之，諸如，第一層為錄及第二層 為銅。其匕聚合物亦可被黏者於非晶型飽和煙熱塑性基材 之表面。此等聚合物包含對於改質表面具有吸引力之任何 聚合物，對於改質表面具有吸引力之熱塑性及熱固性聚合 物，諸如，聚酯、聚碳酸酯、聚二甲基矽氧烷、聚醯胺（ 耐綸）、聚丙烯酸酯、聚氨基曱酸酯及其等之混合物。 亦可被附著於處理過之聚合物基材表面上之其它材料 ^紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公爱） —――~~ --- (請先閲讀背面之注意事項再填寫本頁)，
403775 ---〜--- 五、發明說明（10) 包含以丙烯為基本之漆料，諸如，DaiccureTM(：lear SD 211 及 SD-217，可得自 Dainnippon Ink and chemi(?als，Inc，色 料、墨水或染料，诸如，Irgaaph〇rgreen ..cDR，可.得自 Cibaa-Geigy，具有低分子量聚笨乙烯/丙烯酸醋聚合物或馬 來酸酐聚合物之以水為基本之系統、凝膠，諸如，丙烯酸 S曰/¼氧凝膠及可以紫外線固化之丙烯酸樹脂。 將金屬及其它聚合材料施於聚合物基材上之方法包 含任何業界所知之傳統方法，諸如，塗覆、噴濺、真空沈 積、溶劑沈積、真空蒸發及濕式銀化。 . . ' ' . . 於本發明之一實施例中，黏著性被促進之pCHE光學 "質碟片被獲得之。此碟片係使用任何典型之模製技術模 製之，其係業界所已知且被描述於The Compact Disc —db〇〇k, % 2版，Pohlmann。螓片表面藉由以氬電漿處理 而改質，然後以鋁反射層藉由塗覆喷濺塗覆之。光碟可被 作為光子.南雄度> §孔s己錄介質..，諸如，CD、. v.D、DVD及 可窝式CD電腦用記憶碟片、光學磁性碟片或光學卡片。 下列範例係被供以例示本發明。此等範例並非用以限 制本發明之範圍且其不應被如此演繹。除非有其它指示外 ，含量係以重量份或臺量百分率計。 範例 六片CD片藉由注模聚環己基乙烯而製備之。 第一片係比較例，其未被作表面處理，其中碟片基材 藉由X-射線光電子光譜及揭觸角分析定其特徵，而使用 Zismarm技術（水、甲醯、乙二醇及二甲基硫氧化物被使 (請先閱讀背面之注意事項再填寫本頁>. i訂！ 經濟部智慧財產局員工消費合作社印製
403775 A7 B7 五、發明說明（11 ) 用之）決定表面組成及能量。其數據係綜述於第1表。 第二片係比較例，其未被表面處理，但被使用蒸氣沈 積方法塗覆一層鋁。基材對金屬之黏著性經由ASTM方法 D 33M決定之。此數據係顯示於第2表。 第三片係於下述條件下使用Tegal 903e電漿處理：氬 氛圍、750mTorr壓力、100W電力，約持續2分鐘。表面能 量及XPS分析於電漿處理後立即施行，且示於第1表中。 第四片係於相同於上述條件下以氬電漿處理，且以A1 金屬化。金屬對基材之黏著性經由ASTM D3359測試，且 數如第2表所示。_ 第5片係於下列條件下使用Tegal 903e電漿蝕刻劑處理 :氮氛圍、750mTorr壓力、500W rf電力，持續約24秒。 表面能量及XPS分析於電漿處理後立即施行，且數據如第 1表中所示。 第六片係以相同於上述之條件下以氮電漿處理，且以 A1金屬化。金屬對基材之黏著性經由ASTM D3359測試， 且數據如第2表所示。 (請先閲讀背面之注意事項再填寫本頁) 經濟部智慧財產局員工消費合作社印製 處理 臨界表面能量 (dynes/cm) 接觸角,h2o 氧百分率* 氮百分率* 碳百分率* (第-片） 22 98° 0.3 未測出 99.7 Ar電漿 (第三片） 44 75。 5.6 4.1 89.4 N2電漿 (第五片） 54 26〇C 4.2 16.0 78.0 *由XPS分析，以原子百分比示之。此分析反應基材表面最初lOnm之組成。 **無表面處理之比較例。 14 本紙張尺度適用中國國家標準（CNS)A4規格mo X 297公釐） A7 一__一__ b7五、發明說明（12) 黏著性測試結果之分類： 金屬化之CD片藉由交叉蝕刻金屬膜測試余屬/基材之 黏著性，且如ASTM D 3 3 59般施行帶拉伸測試。金屬黏著 性質之分類係如下所述： 分麵 MM. 5B 切割角完全平滑；無矩形格分開。 4B 小的塗覆薄片於交又處分開；少於5%之面積 被影響。 3B 小塗覆薄片延著切割之端緣及交叉處分開。 被影響之面積係格子之5至15%。 2B 塗覆.物.延著端緣及矩形部份產生薄片。被影 響之面積係格子之15至35%。 1B 塗覆物係延著大帶子之切割端緣產生薄片， 且整個矩形已分開。被影響之面積係格子之 35至 65% 〇 0B 薄片及分開倩形較第1級差。 (請先閱讀背面之注意事項再填寫本頁) 訂· .線一 經濟部智慧財產局員工消費合作杜印製 四個拉伸測試被施行於每一金屬碟片型式。 第2表：鋁對PCHE基材之黏著性 處理 帶拉伸黏著性結果 比較例** (第二片） οβ,οβ,οβ,οβ Ajr電漿 (第四片） 3Β，3Β，5Β，4Β 電漿 (第六片） ** ». , 5Β,4Β,0Β，4Β 無表面處理之比較例 聚合物基材之表面處理大量增加對金屬之黏著性。

Claims (1)

  1. 六、申請專利範園 第87116G82號專利巾請財請專利範圍修正本 修正日期：89年01月 種非晶型飽和烴熱塑性基材，其已藉由激發氣相技 術處理’如此，至少35dynes/cm之臨界表面能量被獲 得之。 2·如申請專利範圍第！項之基材，其中該熱塑性基材係選 自聚環己基乙烯之均聚物或共聚物、環烯烴聚合物及 開環複分解聚合物。 ’其中該熱塑性基材係聋 其中該熱塑性基材係聚 其中該熱塑性基材係環 其中該熱塑性基材係開 其另包含附著於該基材 其中該金屬係選自鋁、 其中該金屬係鋁 3. 如申請專利範圍第1項之基材 環己.基_乙稀。 4. 如申請專利範圍第1項之基材 壞己基乙埽之嵌段共聚物。 5 ·如申請專利範圍第1項之基材 烯烴聚合物。 6-如申請專利範圍第1項之基材 環複分解之聚合物。 7·如申請專利範圍第1項之基材 表面之金屬。 8.如申請專利範圍第7項之基材： 鉻、鎳、鈦、銀、鋼及金。 9_如申請專利範圍第8項之基材， !〇.如申請專利範圍第！項之基材，其另 材表面之聚合物、 以 Η.如申請專利範圍第1〇項之基材，其中該聚合物係選 403775 六、.申請專利範圍 經.濟部智慧財產局員工消費合作社印製 A8 B8 C8 D8 聚S曰聚碳酸酯、聚二甲基矽氧烷、聚醯胺、聚丙烯 酸酯、聚氨基甲酸酯及其等之混合物。 12.如申專利範圍第丨丨項之基材，其巾該聚合物聚破酸 酉旨。 13. 如申凊專利範圍第i項之基材其中該激發氣相技術係 日暈放電處理。 14. 如申凊專利範圍第!項之基材’其中該激發氣相處理係 電漿處理。 15 ‘如申切專利範圍第丨項之基材，其中該激發氣相處理係 火焰處理。 16. 如申叫專利範圍第1項之基材其中該激發氣相處理係 臭氧處理。 17. 如申印專利範圍第i項之基材，其中該激發氣相處理係 於氬中之電漿處理，且該基材進一步包含附著於該氫 化芳族聚合物基材表面之鋁層。 18. 如申請專利範圍第丨項之基材，其進一步包含附著於該 非晶型飽和烴熱塑性基材表面上之金屬層，其中該金 屬層亦附著於另外之聚合層，形成非晶型飽和烴熱塑 性基材/金屬/聚合物之層合物。 19. 如申請專利範圍第1項之基材，其進一步被用於製造一 種CD-音碟。 20. 如申凊專利範圍第1項之基材，其進一步被用於製造一 種CD-ROM碟片。 21 ·如申請專利範圍第1項之基材，其進一步被用於製造一
    (請先閲讀背面之注意事項再填寫本頁)
    經濟部智慧財產局員工消費合作杜印製 403775 I D8 六、申請專利範圍 種DVD碟片。 22.如申請專利範圍第1項之基材’其進一步被用於製造一 種CD-可寫入式碟片。 本紙張尺度適用中國國家標準（CNS)A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁)
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