TW396530B - Method for simplifying masking process to form a raised type fuse structure and fuse window with sidewall protection structure - Google Patents

Abstract

A method for reducing the passivation layer process of masking fabrication is provided, which could reduce the required photo or masking process after metal line formed, and in the contact hole process, form fuse window in the same process. Moreover, the method could include the steps to form bonding pad opening when the sidewall of fuse window is defined. By process integration, it could form a raised type fuse structure with upside and sidewall protected by dielectric layer and fuse window with sidewall waterproofed structure.

Description

A7 Printed invention description printed by the Shell Standard Consumer Cooperative of the Central Bureau of Standards of the Five Ministry of Economic Affairs (This invention is related to a semiconductor process, in particular, after a metal wiring, the method of simplifying the manufacturing process of the photomask coating film to form a raised dance Wire structure and method with side wall protection and wire window background. Background: In the design of integrated circuits, manufacturing backup components such as capacitor memory cells on the chip to replace defective or defective components or memory cells. A very important concept in application 'After the component manufacturing process is completed, the process of testing the chip with a probe or contact pin (chip.pr0be test) will be carried out to find the defective component; The way of wire connection makes the backup component replace the defective component to repair the flaws or defects in the wafer manufacturing. Through the process of wafer repair, which can greatly reduce the possibility of defective components on the wafer, and increase the yield of production, the method of manufacturing backup components has therefore been applied to the manufacture of many memory chips or logic circuits in order to increase The yield of production and reduce the cost of production. Generally speaking, 'there are several ways to redefine the connection of the wires on the chip'. One of the most important application methods is to use fuses' by interrupting the specific process Wire, you can change the current path 'and replace the defective component with the backup component. The more common application is to use the energy of the laser to pass through the fuse window on the chip (fuse This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page )

Α7 Β7 Printed by the Shell Standard Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. The invention description (window) is used to blow off the chip's previous generation & the specific address of the cookware is ‘Dynamic Random Access’. memory; DRAM) as an example, usually C-random access is formed into a row or multiple rows and a row or: outside the array of memory, the amount of cells), and the fuse can be a spare memory cell (memory) The first poly b in the stray structure (Poly_l) or the second polycrystalline silicon wire r, and the fuse corresponding to the defined address of the Shixi wire for more than 3 days, py 2), etc. are formed. , By replacing the spare memory cells with traps.寐 You can see the flawed memory cell in the first picture as shown in the first picture, which is-㈣ ... often by removing the dielectric cover: meaning: 'to form an opening in the fuse ls > u W 14 'and above, and during the repairing process, the laser energy can be burned through the fuse window 10 to fuse 18 in order to reduce the complicated first step required to form the fuse window after forming the metal wire. The process of masking and etching must be done by the manufacturer. Try to form a melt in the process of forming a metal contact hole (via contact) at the same time. * ^ Brother bath 4 window opening, but this fuse The formation of a window or fuse window opening 10—a new step _α creates new problems because the fuse window 10 is formed by excavating several dielectric layers or coating layers 12, 14, and 16. ' Therefore, the interface between the dielectric layer or the coating layer 12, 14, and 16 will be exposed, which will cause the problem of intrusion of external water vapor, ions and impurities from the interface 10a and 10b, and water vapor and impurities from the interface 10a & 10b penetrates the internal lead structures 22 and 24, and even penetrates the components on the substrate, resulting in its material and Chemical reactions of gases, ions, impurities, etc. cause problems such as oxidation or corrosion, further affecting or destroying its operating characteristics, making the paper size applicable to the Chinese National Standard (CNS) A4 specification (2 丨 0X297). ------ 4 ----- Install I (please read the precautions on the back before filling out this page) Threading Φ · Printed by A7 B7, Zhengong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs ) The reliability and yield of the product are greatly reduced. Moreover, when a fuse window 10 is formed in a conventional process, a dielectric layer 26 as shown in the first figure will be left above the fuse 18, and the dielectric layer 26 is usually thousands of angstroms thick and has light transmission properties. Or transparent materials, such as silicon oxide, etc., in the process of firing the fuse 18 with a laser, the dielectric layer 2 6 must be blown open with a high energy so that the fuse 18 can be reliably Fusing and becoming an open circuit. This high energy requirement will make the laser repair process more difficult to control, and it is more likely to cause the leakage current caused by the fuse 18 not being completely blown, making the laser repair process reliable. The degree is thus reduced. In the current more advanced semiconductor processes, the so-called self-aligned contact (SAC) process is often used, except that it is generally applied to the first polycrystalline silicon (poly-1) structure. Can be further applied to the structure of the second polycrystalline silicon wire (poly: 2); that is, a cap dielectric and a dielectric on the side wall are formed on the upper side and on both sides of the second polycrystalline silicon dream wire. Material (sidewall dielectric). In the traditional manufacturing process, it is often necessary to use several photomasks and corresponding lithography and etching processes to form a fuse window. This complicated process, which requires multiple photomasks, leads to a significant increase in manufacturing cost and time. For fuse structures with upper dielectric materials and sidewall dielectric materials, further simplified and efficient processes must be developed. Therefore, there is currently a need for a photomask-related manufacturing process method that can reduce the coating after metal wire wiring. At the same time, a new process method is used to improve the process of forming the fuse window before and after the fuse window. (Please read the notes on the back before filling this page)

、 1T This paper size is applicable to Chinese Standards (CNS) A4 specification (210X297 mm) A7 Printed by B7, I Industrial and Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs V. Invention of water vapor and impurities, and Forming a convex fuse structure that is easier to blow; in order to reduce the mask process, reduce production costs, and improve product characteristics and yield, and increase the controllability and yield of the laser repair process. OBJECTS AND SUMMARY OF THE INVENTION The object of the present invention is to provide a method for simplifying the manufacturing process of a metal wire coating film mask in the process of forming a fuse window. Another object of the present invention is to provide a method for simplifying a photomask manufacturing process and solve problems that may be caused when the photomask manufacturing process is reduced, so as to form a convex fuse structure and a fuse window with side wall protection. A further object of the present invention is to provide a method for forming a raised fuse structure, which can be applied to a fuse structure having an upper dielectric material and a sidewall dielectric material. Another object of the present invention is to provide a method for forming a fuse window and a raised fuse structure with a side wall protection coating film, so as to solve the problem of intrusion of moisture and impurities. Yet another object of the present invention is to provide a method for simplifying the manufacturing process of a photomask to form a convex fuse structure, which can simultaneously form a fuse window and a contact pad opening with side wall protection, and can use the original required Three photomasks are reduced to one photomask, reducing the cost of the production process. Another object of the present invention is to provide a fuse window with side wall protection, which eliminates the lack of a protective film on the side wall of the opening of the fuse window during the reduction of the photomask process (please read the precautions on the back before filling this page)

1. The paper size of the 1T line is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) Printed by the Consumers Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7 B7 V. Description of the invention . Yet another object of the present invention is to provide a method for forming a raised fuse structure, which can make the fuse structure easier to fuse with a laser, so as to increase the controllability and yield of the laser repair process. The method for forming a fuse window with side wall protection in the present invention is used to form a fuse window on a semiconductor substrate having a fuse, a first conductor structure, and a plurality of dielectric layers formed thereon. The fuse has a fuse top covering dielectric material and a fuse sidewall dielectric material formed thereon. The method in the present invention may include the following steps: firstly removing a part of the dielectric layer to form a metal connection hole and a fuse window. In the dielectric layer, the metal connection hole extends to the first conductor structure, and a fuse window is formed above the fuse and extends to the dielectric material above the fuse and the dielectric material on the side wall of the fuse to leave a raised fuse. Structure; and forming a second conductor structure in and above the metal connection hole; forming a coating film layer on the second conductor structure, the fuse window, and the raised fuse structure; and finally removing part of the coating The dielectric layer of the film layer to the original fuse and the dielectric material of the fuse side wall are exposed, and the side wall structure of the coating layer is left on the side wall of the fuse window. The process of removing a part of the coating layer and leaving the sidewall structure of the coating layer may include the following steps: firstly forming a photoresist layer on the coating layer; then defining an opening area in the photoresist layer, melting Above the silk window, the width of the opening area is narrower than that of the fuse window; and a photoresist layer is used as a mask to etch the coating film layer. (Please read the notes on the back before filling out this page) .ri The size of the paper is applicable to the Chinese National Standard (CNS) A4 (210X297 mm) V. Description of the invention The cut-off window wire melting forming system is transmitted by the medium-term system. The drawing is shown clearly and repetitively. The cut-off material-based integrated guide, the half-wire melting is shown in the figure. On the body guide, the number of dielectrics in the forming layer is perpendicular to the half of the material base guide. Figure a shows the second figure b. Figure two shows the direction of the section R-4 to remove the wire and melt in the wire The Ming and Fadong editions show the continuous display of the figure a. The third metal forming is shown in the layered dielectric diagram, and the surface is perpendicular to the half of the material base. Figure a The third display b. The third metal formation The structure of the body is the second one. The figure is intended to show the cut surface, and the holes on the side of it are shown in the figure. Fang Zhiyi is in the guide of the material base. Picture a (please read the precautions on the back before filling this page) The order printed by the Staff Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs is clear. Revelation diagram a fifth window diagram b fifth map a sixth intention a shows the five-dimensional display of the present direction of the explicit display and the line of the line to guide the second upper part of the structure Laminated membrane silk covering solution type is convex and straight down, and one layer is on the guide half of the membrane covering substrate. ≫ Except for Chinese paper size, the Chinese National Standard (CNS) Λ4 specification (210X 297 mm) 〉 Printed by the Central Bureau of Standards, Ministry of Economic Affairs and Consumer Cooperatives A7 B7 V. Description of the invention () Cross-section schematic diagram of the coating structure on the side wall of the fuse window. Figure kb shows the semiconductor substrate in Figure 6a in a vertical direction. A schematic cross-sectional view of the direction. FIG. 6c shows a cross-sectional schematic diagram of the contact pad opening at another position at the same time when a part of the coating film layer is removed in the present invention. Detailed description of the invention: The purpose of the present invention is to improve The invention provides a method for simplifying the process of forming a metal wire-covered photomask in the process of forming a fuse window, and solving the problem of intrusion of moisture and impurities in the opening of the fuse window that may be caused when the photomask process is reduced, so as to form a fuse window The sidewall has a raised fuse structure with a waterproof protective coating structure. The raised fuse structure has an upper dielectric material and a sidewall dielectric material on the fuse. Compared with the embedded type (e m b e d d e d) structure, the convex type dissolving silk structure is easier to fuse with the laser, which can increase the controllability and yield of the laser repair process. In the method of the present invention, a fuse window and a contact pad opening with side wall protection can be formed at the same time, or a step of forming a contact pad opening can be added at the same time when a fuse window is formed. In the following embodiments, and The three photomasks originally needed to be reduced can be reduced to one photomask, which greatly reduces the cost of the process. The raised fuse structure can provide better protection characteristics through the upper dielectric material and the sidewall dielectric material, and The formation of the film structure on the side wall of the fuse window improves the reliability of the product. Without limiting the spirit and scope of the present invention, the following is one-half (please read the notes on the back before filling this page) The paper size of this paper applies the Chinese National Standard (CNS) A4 specification (2) 0 × 297 mm ) A7 B7 V. Explanation of the invention () The process of printing the conductor substrate on the conductor substrate of the Goods and Consumers Cooperative of the Central Ministry of Economic Affairs and forming the second wire layer structure and fuse window at the same time is taken as an example to explain the implementation of the present invention. The method for forming a fused silk window with side wall protection in the present invention can be integrated into a general metallization process, and the step of forming the last layer of the wire layer structure is therefore familiar to those skilled in the art. The method is applied to various processes of forming a fuse window, and is integrated with the steps of forming different wire layer structures. The details that can be changed during implementation are not described in detail. See Figure 2a. First, the semiconductor substrate 30 is provided. Generally, the most commonly used material for the substrate 30 is silicon and the crystal orientation is < 1〇〇 > If necessary, a substrate with different crystal orientation or different materials is used. The substrate 30 has a formed fuse 32, a first conductor structure 34, and multiple dielectric layers 36, 38, and 40. Generally speaking, the substrate There will be many fused silk and first conductor structures on the 30, but for ease of introduction, only a single structure is shown in the figure. At the same time, more layers of conductor structure can be used instead of being limited to a single layer structure in the figure. Taking a process of a dynamic random access memory (DRAM) as an example, in a preferred embodiment, the fuse 32 is formed on the second polysilicon wire layer (poly_2). Therefore, as shown in the second vertical cross-sectional schematic diagram in the second b, after the fuse 32 is formed, it has a dielectric material 3 2 c above the fuse and a dielectric material 3 2 d on the side wall of the fuse. At the side walls. The dielectric material 32c above the fuse may be a silicon nitride layer covering the fuse 32. The dielectric material 32d of the fuse sidewall may be a silicon nitride layer sidewall structure extending along the direction of the fuse 32. You can also order with the upper air (please read the precautions on the back before filling this page). Φ. This paper size applies to Chinese national standards (CNS > A4 size (2 丨 0 X 297 mm)

Printed by the Consumers' Cooperatives of the Central Standards and Beneficial Bureau of the Ministry of Economic Affairs. 5. Description of the Invention () A silicon layer is formed on the fuse 32 at the same time. The dielectric layer in this example may include three dielectric layers, in order from bottom to top, an inter-polysilicon oxide (ΐρ〇) 36, an inter-level dielectric (ILD) 38 And an inter-metal dielectric (IMD) 40, and the 'dielectric layer' can also be composed of different combinations and number of layers under different designs and processes. Referring to FIG. 3a, the dielectric layers 36, 38, and 40 ′ are partially removed to form a metal connection hole 42 and a fuse window 44 therein. The metal connection hole 42 extends to the first conductor structure 34. In order to fill in the connected conductors in the subsequent steps, the 'fuse window 44 is formed at the position of the fuse 3 2 in the dielectric layers 36, 38, and 40' and extends to the dielectric material 3 2 c above the fuse and The dielectric material 3 2 d on the side wall of the fuse is left to leave a convex-shaped dissolving wire structure 3 2 r, as shown in the schematic cross-sectional view in the other vertical direction in the third figure b. In this example, the method of forming the metal connection hole 42 and the fuse window 44 is to use a process of wet etching and dry etching successively to form the metal connection hole 42 and the fuse window. 44 The shape of the opening above the 44 is wide; During the process of etching, the shape of the large opening of the metal quick contact hole 42 and the fuse window 44 is relatively large; then in the non-isotropic dry name engraving process, it is formed closer to the downward engraving process. The shape of the vertical sidewall is shown in the third a and the third b. In the traditional manufacturing process, 'the formation of the metal connection hole 42 and the fuse window 44 is performed by two separate processes. Generally, it is first formed. The metal connection hole 42 is filled into the conductor layer', and then another The process forms a fuse window 44. In the present invention, the metal connection hole 42 and the dazzle can be achieved in the same process and at the same time. The paper size applies the Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling out this page)

A7 B7 Printed by the Shellfish Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention () The etching of the silk window 44 can reduce the number of photomasks required, and reduce the process steps and costs of the required rods. Referring to FIG. 4a, a second conductor structure 46 is then formed in and above the metal connection hole 42. The second conductor structure 46 may be a single conductor material or a combination of multiple conductor materials, and is used multiple times. It is formed by deposition or sputtering, and then a patterning process is used to define its connection pattern to form a second conductor structure 46. Figure 4b shows a schematic cross-sectional view in a vertical direction. Then, a coating film layer 48 is formed on the second conductor structure 46, the fuse window 44, and the raised fuse 32r. As shown in FIG. 5a, FIG. 5b shows a schematic cross-sectional view in the vertical direction. . The coating layer 48 is made of a material with better protection against external moisture, ions and impurities. In this example, the coating layer 48 may use a combination of an oxide layer and a nitride layer. The silicon layer may be formed by plasma enhanced chemical vapor deposition (PECVD). The thickness is between 1000 angstroms and 3,000 angstroms, and a silicon nitride layer is formed on the oxide layer by plasma enhanced chemical vapor deposition. The thickness of the silicon nitride layer is about 3000 angstroms to 8,000 angstroms. In addition, the coating film layer 48 can also use only a silicon nitride layer, and a plasma-assisted chemical vapor deposition method can also be used to form a silicon nitride layer with a thickness of about 4000 angstroms to 8000 angstroms. Differently, the coating film layer 48 is composed of several oxide layers and several silicon nitride layers. See Figure 6a, and then remove part of the coating film layer 48 to the dielectric material 32c above the fuse and the dielectric material 32d of the fuse side wall. (Please read the precautions on the back before filling this page)

This paper size applies to Chinese national standards (CNS > A4 specifications (210X297 mm). 5. Description of the invention (A7 B7 printed by the Central Standards Bureau of the Ministry of Economic Affairs, Industrial and Consumer Cooperatives) 'for fuse window 4 X 筮 山 u π ♦ The coating film side wall structure 48a is left on the side wall of 44. Figure 6b1 also shows the 'remaining coating a' in the schematic cross-sectional view of the coating film side wall structure 48 direction. Because of the raised fuse in the present invention The tens of thousands of the structure 32 and the side walls are covered by two & u dielectric layers, but when using laser fuses, the energy required is still lower than the energy required by traditional embedded fuses. It is much lower, which can make the laser charm, a ± a low field ^ compensation process is easier to control, and can eliminate the leakage due to the fuse is not completely broken ^ current problems, can increase the reliability of the repair process To make a step, the raised wire structure 32r can be protected by the dielectric material 32_32d above it to prevent 'defecting and damage' from external moisture and impurities. In addition, it covers the sidewall of the coating layer. The structure 48a may further cover the interface between the median λ / r λ,, and 40, It can effectively prevent the invasion of water, gas, ions and impurities from the outside, and can protect internal structures such as the first conductor structure 34 and the second guide boat structure 46 from damage, thereby improving the yield and reliability of the product. The method of the side wall structure 48a can be achieved by a general patterning process, and may include the following steps: firstly forming a photoresist layer 52 on the coating film layer 48; and then defining an opening area in the photoresist layer 52; Finally, the photoresist layer 52 is used as a mask, and the cover film layer 48 is etched to leave a side wall structure 48a of the cover film. The photoresist layer 52 may use an organic polymer layer (polymide). The layer 52 can also be used as an upper coating layer at the same time, and can be retained after forming the coating layer side wall structure 48a. In order to increase the uniformity of the material of the organic polymer layer 52 and its insulation characteristics, 'can be used in After the etching step, a hot baking process is added to make the organic polymer 12 paper size applicable to the Chinese standard (CNS) A4 (210'〆297 mm>) (Please read the precautions on the back before filling this page ) Order fee ·.

A7 B7 —1 — .--.-V. Description of the invention () The material of layer 52 is harder and denser after baking at about 350 ° C, which enhances its characteristics as an upper coating layer. At the same time as the step of coating the film layer 48, the same photoresist layer 52 and the same definition of the lithography process can be used to simultaneously form a bonding pad opening 54 for welding external wires in other positions on the substrate 30, As shown in FIG. 6c, the contact pad opening 54 extends to the top surface of the second conductor structure 46 to form an external connection. Since the formation of the contact pad opening 54 is performed in the same lithography process and money-etching process as the steps of etching the coating film layer 48 and leaving the coating film side wall structure 48a, additional light can be reduced. The manufacturing process and time cost required for the mask process to form the contact opening 54; by reducing the use of a photomask, the efficiency of mass production can be improved. The present invention uses a preferred embodiment to explain the above "only for the purpose of helping to understand the implementation of the present invention, but not to limit the spirit of the present invention". Those skilled in the art will appreciate the spirit of the present invention without departing from the present invention. Within the spirit of the scope, when you can make some changes, retouching and equivalent changes, the scope of its patent protection depends on the scope of the attached patent application and its equivalent fields. Β (Please read the precautions on the back before filling this page) Order The paper standard printed by the Central Bureau of Standards of the Ministry of Economic Affairs and the Industrial Cooperative Cooperative applies the Chinese National Standard (CNS) Λ4 specification (2 丨 0 X 29 " 7 mm)

Claims (1)

.... A8 B8 C8 D8 VI. Application for Patent Scope Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 1. A method for forming a fuse window on a semiconductor substrate with a fuse and a first conductor A structure and a plurality of dielectric layers are formed thereon. The fuse is formed thereon with a dielectric material above the fuse and a dielectric material on the side wall of the fuse. The method includes at least the following steps: removing part of the dielectric layer to A metal connection hole and a fuse window are formed in the dielectric layer, the metal connection hole extends to the first conductor structure, the fuse window is formed above the fuse and extends to the dielectric material above the fuse and the fuse A wire-shaped dielectric material is used to leave a raised fuse structure; a second conductor structure is formed in and above the metal connection hole; a coating layer is formed on the second conductor structure and the fuse window And above the raised fuse structure; and removing a portion of the coating film layer to the dielectric material above the fuse and the dielectric material of the fuse side wall are exposed to leave on the side wall of the fuse window Covering film side wall structure. 2. The method according to item 1 of the patent application range, wherein the plurality of dielectric layers include at least a polycrystalline interlayer oxide layer, an intermediate dielectric layer, and a metal interlayer dielectric layer. 3. The method according to item 1 of the scope of patent application, wherein the dielectric material above the fuse includes at least an upper silicon nitride layer covering the fuse. 4. For the method of applying for the first item of the patent scope, in which the fuse side wall mentioned above (please read the precautions on the back before filling this page) -installation, βτ 14 This standard applies to China National Standard (CNS) A4 specifications ( 210X297 mm) A8 B8 C8, D8 printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 6. Patent application scope The dielectric material includes at least a sidewall silicon nitride layer formed on the side wall of the fuse. 5. The method according to item 1 of the patent application scope, wherein the step of forming the contact window and the fuse window includes at least a wet etching process. 6. If the method of claim 1 is applied, the step of forming the contact window and the fuse window described above at least includes a dry etching process. 7. The method according to item 1 of the patent application range, wherein the coating layer mentioned above includes at least one silicon nitride layer. 8. The method according to item 1 of the patent application range, wherein the coating layer mentioned above includes at least an oxide layer and a silicon nitride layer. 〆 '9. According to the method of claim 1 in the scope of patent application, wherein the steps of removing the coating layer and leaving the sidewall structure of the coating layer include at least the following steps: forming a photoresist layer on the substrate On the film layer; define an opening area in the photoresist layer and above the fuse window, (please read the precautions on the back before filling in this page) layer film and cover; '' The screen of the melting screen is relatively wide-resistance light field. The area is D-layer light-blocking. Its method is 9 in the above description. Up to 5 papers are again applicable to China National Standard (CNS) A4 (210X297 mm) A8 B8 C8 D8 6. Scope of patent application Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 11. If the method of the scope of application for patent No. 10 is included, a hot baking process is performed after the etching step. 12. The method according to item 1 of the patent application scope is further included in the step of removing the coating layer in the above part, and simultaneously forming a contact pad opening to part of the second conductor structure. 13. —A method for forming a fuse window on a semiconductor substrate, the substrate having a fuse, a first conductor structure, and a plurality of dielectric layers formed thereon, the fuse having a dielectric material above the fuse And a fuse sidewall dielectric material is formed thereon, the method includes at least the following steps: removing a part of the dielectric layer to form a metal connection hole and a fuse window in the dielectric layer, the metal connection hole extending to the first A conductor structure, the fuse window is formed above the fuse and extends to the dielectric material above the fuse and the dielectric material on the side wall of the fuse to leave a convex fuse structure; forming a second conductor structure Inside and above the metal connection hole; forming a coating film layer on the second conductor structure, the tower window, and the raised fuse structure; and forming a photoresist layer on the coating film Layer; defining an opening area in the photoresist layer, above the fuse window, the width of the opening area is narrower than the fuse window; and using the photoresist layer as a cover, the covering of the etched part Film | The dielectric material above the fuse and the dielectric material on the side wall of the fuse Dew, because this fuse * ___—_ 16 This paper size is applicable to China National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page) Application scope of patent A8 B8 C8 D8 Structure The wall of the knot wall is covered with a layer of 3 oxygen and a 1st dream circle crystal fandolyi. For special layers, please apply for electricity application. Please refer to 14 to 14 layers of dielectric metal layering. One or more layers are described in the above description. Among them, 15 dielectrics are required. 1Λ On the side of the surrounding gas, cover the layer on the top of the cover, and the upper side of the upper side should be covered. Please refer to the application of the material 16 dielectric wall 3 Ί × the upper side of the upper side The silk melted on the side of the gas wall should be cut into the square layer of the dream, and the carved shape should be etched. The J f hai eclipse fishery package included in the above process is 13 to For the special window of Fan Buli, please apply for the application of the 17th and the 0th window covering film. Enclosure Fan Si • ΠΊ Please apply for a package containing 18 to as few as (Please read the precautions on the back before filling out this page) The Central Government Bureau of the Ministry of Economic Affairs, Consumer Consumption Co., Ltd. Printed Gas No. 1 and Layered Oxygen 1 -Li Zhuan invited I to apply for a package with as little as a layer, as if it contains 20 packets and as low as a special request for a high Fan Fen Li 3 ^ .1 The description of the film cover is in the above. The item of the layer of light and the layer of light in the description of its method 3 1 is the enclosing layer 7 The paper size is applicable to the national standard (CNS) A4 specification (210X297 mm) The scope of patent application A8 B8 C8 D8 Step • ΠΊ Hai Yu should include the method of improving the law. 2 Fan Li Bing, please apply for the application, and then go straight to the manufacturing department and go to the mouth to open the pad with the touch method. The time item is the same as the first step in 3 and 1. Fan Zhigou's structured special film body, please refer to the second part of the 22nd part of the application. D ----- ^ _— rsr equipment — I (Please read the precautions on the back before filling this page) Order Printed by the Central Bureau of Standards, Ministry of Economic Affairs, Consumer Cooperatives 8 This paper is sized for China National Standards (CNS) Α4 (210 × 297 mm)