Λ Λ 經濟部中央標準局員工消費合作社印製 五、發明説明（’） 詳細說明： L發明之技術領域： 本發明是關於一種積體電路之雷射修護窗的結構。 2·發明背景： 積體電路記憶體元件的製造方法，是在晶圓上形成大量 記憶體位元，並將記憶體位元連接起來以形成記憶元陣列， 做爲記憶體元件的儲存裝置。積體電路的製程流程有數百個 步驟，在製作過程中難免因沉積、蝕刻等步驟的不均勻，或 是因化學物質所含些許雜質而產生缺陷(Defect)，造成產品 的良率大幅下降。 一個積體電路係由數百萬乃至數億個記憶單元所構成。 一個製作不良的積體電路，經常不是全部的記憶單元都有缺. 陷，有時是僅有少數幾個(甚至只有一個)記憶單元出現缺 陷。爲了有效提高產品的良率，進而減低生產成本，在設計 積體電路時，便設計若干額外的備用位元，當所完成積體電 路只有少數缺陷時，便可利用雷射光切斷備用位元電路之熔 '絲(Fuse)，使備用位元得以取代毀損位元，該積體電路便可 被修復而正常運作。製作積體電路的熔絲區域，需在熔絲區 域上方形成一窗口，以利雷射光入射，然水氣會從接觸窗進 入熔絲區域，然後經由介電層侵入積體電路，造成積體電路 的污染與金屬線腐蝕，影響積體電路的正常操作。所以在積 體電路之熔絲的製作過程中，通常都在熔絲區域的周圍，製 作保護環(Protective Ring)結構，隔絕積體電路與雷射修護 _ 2 凡度ϋϋ家料（CNS M4規格（210X297公釐) ------------^------iT------^--- (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標隼局員工消費合作社印裝 五、發明説明（,c') 窗，避免水氣或污染從介電層侵入積體電路。這整個結構稱 爲雷射修護窗。 請參考圖一，爲傳統包含熔絲之雷射修復窗的結構剖面 示意圖。該雷射修復窗包括一複晶矽層10在基板5上，做爲 熔絲；一介電層30/複數個金屬層間介電層40/保護層50之複 層結構，覆蓋在該複晶矽層的表面；一保護環，包括有複數 個貫通所述金屬層間介電層之環狀金屬插塞70及複數個環狀 金屬層80。爲保護溶絲不在雷射修復之前便遭受破壞，在該 熔絲上方需保留一層厚度介於2000埃至10000埃的氧化矽做 爲保護罩。該保護罩的厚度必須嚴格控制，如果太薄則無法 達到保護熔絲的功效；但若此保護罩太厚，則雷射光穿不 透，無法進行雷射修復。 此傳統結構有下列二項嚴重的缺點： (1) 此傳統結構以複晶矽層做爲熔絲，該複晶矽之上有 一層介電層、數層金屬層間介電層、以及一層保護 層，所述各層皆是由氧化矽所形成，因此在該熔絲 之上有超過6微米厚的氧化矽層。當形成雷射修護窗 時，需要將此氧化矽層蝕刻到僅剩2000埃至10000 埃，蝕刻終止點僅能以蝕刻時間加以控制。因蝕刻 速率不易穩定地控制，因此常會使得熔絲上方氧化 矽保護罩的厚度太厚或太薄，難以形成良好的雷射 修護窗。 (2) 此傳統結構的窗口極深，由金屬層所形成的保護環 並無法完全涵蓋保護住所述窗口，外界的水氣依然 3 ^紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） -----------抑衣------1T------.# (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裝 五、發明説明（<) 可由保護環下方的介電層侵入積體電路，造成積體 電路的污染與金屬線腐蝕，影響積體電路的正常操 作。 3. 發明之簡要說明： 本發明之主要目的是提供一種積體電路之雷射修護窗的 結構。 本發明之次要目的是提供一雷射修護窗內熔絲的結構。 本發明之再一目的是提供一種雷射修護窗之保護環結 構，可以將雷射修護窗整個圍起來，有效防止水氣侵入積體 電路。 本發明所述雷射修護窗的結構包括一複晶矽層，其中一 區段爲斷路區域；一介電層/複數個金屬層間介電層/保護層 之複層結構，覆蓋在該複晶矽層及該斷路區域的表面；一保 護環，包括有複數個貫通所述金屬層間介電層之環狀金屬插 塞及複數個環狀金屬層；二延伸金屬插塞，位於該保護環內 並與該保護環隔離，其底端分別連接於所述複晶矽層之斷路 '區域的兩端，並延伸形成於所述金屬層間介電層；一連接金 屬層，與所述保護環其中一環狀金屬層位於同一平面，形成 在該延伸金屬插塞之頂端，做爲雷射修護窗的熔絲。 4. 圖式說明： 圖一爲傳統雷射修復窗的結構剖面示意圖。 圖二爲本發明中雷射修復窗的設計佈局圖。 圖三爲本發明第一實施例中雷射修復窗的結構剖面示意 圖。 4 本纸張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） -I - - 1} I. 1} I I I -*^- I...... -- - - - 11 ·-- I Τ» 4° (請先閱讀背面之注意事項再填寫本頁) B7 經濟部中央襟隼局員工消費合作社印製 五、發明説明（达） 圖四爲本發明第二實施例中雷射修復窗的結構剖面示意 圖。 圖五爲本發明第三實施例中雷射修復窗的結構剖面示意 圖。 5.圖號說明： 5-基板 10-複晶矽層 20-斷路區域 30-介電層 31 -介電層/金屬層間介電層/保護層 40-金屬層間介電層 50-保護層 60-保護環 70-環狀金屬插塞 71-第一環狀金屬插塞 72-第二環狀金屬插塞 73-第三環狀金屬插塞 80-環狀金屬層 81-第一環狀金屬層 82-第二環狀金屬層 83-第三環狀金屬層 84-第四環狀金屬層 90-延伸金屬插塞 100-連接金屬層 --^---,-----裝------訂 (請先閱讀背面之注意事項再填寫本頁) 請參考圖二，爲本發明所述雷射修護窗的設計佈局圖， 其包括一複晶矽層10，其中一區段爲斷路區域；一介電層/ 複數個金屬層間介電層/保護層31之複層結構，覆蓋在該複 晶矽層10及該斷路區域的表面；一保護環60，包括有複數個 貫通所述金屬層間介電層之環狀金屬插塞及複數個環狀金屬 層；二延伸金屬插塞90，位於該保護環60內並與該保護環隔 離，其底端分別連接於該複晶矽層之斷路區域的兩端，並延 伸形成於所述金屬層間介電層；一連接金屬層100，與所述 5 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公釐） 經濟部中央標準局員工消費合作社印製 Λ 7 Β7 五、發明説明（Γ ) 保護環其中一環狀金屬層位於同一平面，形成在該延伸金屬 插塞90之頂端，做爲該雷射修護窗的熔絲。 以下將以具四層金屬層結構的積體電路做爲詳細說明的 實施例。在四層金屬層結構的積體電路中，包含有三個環狀 金屬插塞及四層環狀金屬層。任何熟知積體電路技術之人士 皆可明瞭，本發明之原則和精神適用於具一層及一層以上金 屬層結構之任何積體電路。 第一實施例 請參考圖三，爲本發明所述雷射修護窗的剖面示意圖， 其結構包括一複晶矽層1〇在基板5上，其中一區段爲斷路區 域20 ; —介電層30，覆蓋在該複晶矽層10及該斷路區域20的 表面；三個金屬層間介電層40和一保護層50，順序形成在該 介電層上30 ; —保護環，包括有三個貫通所述金屬層間介電 層之環狀金屬插塞(分別是第一環狀金屬插塞71、第二環狀 金屬插塞72、第三環狀金屬插塞73)及四個環狀金屬層(分別 是第一環狀金屬層81、第二環狀金屬層82、第三環狀金屬層 83、第四環狀金屬層84);二延伸金屬插塞90，位於該保護 環內並與該保護環隔離，其底端分別連接於該複晶矽層之斷 路區域20的兩端，並延伸形成於所述金屬層間介電層40 ; — 連接金屬層1〇〇，與所述保護環內第二環狀金屬層位於同一 平面，形成在該延伸金屬插塞90之頂端，做爲該雷射修護窗 的熔絲。 6 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） --,---^-----裝------訂 (請先閱讀背面之注意事項再填寫本頁) 經濟部中失標準局員工消費合作社印製 A 7 B7 . 五、發明説明（Ρ ) 所述複晶矽層是積體電路的第一複晶矽、第二複晶矽、 或第三複晶矽。所述介電層爲氧化矽層，其厚度介於0.5微 米至1.1微米之間。所述金屬層間介電層爲氧化矽層，其厚 度介於1.0微米至2.0微米之間。所述保護環位於該介電層之 上，由第一環狀金屬層、第一環狀金屬插塞、第二環狀金屬 層、第二環狀金屬插塞、第三環狀金屬層、第三環狀金屬插 塞、和第四環狀金屬層由下而上依序形成。 本實施例所述之雷射修護窗以第二金屬層做爲溶絲，所 述第二金屬層上方之氧化矽層遠較傳統以複晶矽層做爲熔絲 結構之氧化矽層爲薄。當蝕刻此氧化矽層以形成雷射修護窗 時，蝕刻終止點的控制將容易許多。因此熔絲上方的氧化矽 保護罩的厚度將可較精確地控制。另外本實施例所述之雷射 修護窗的窗口較淺，由金屬層所形成的保護環得以完全涵蓋 保護住所述窗口，外界的水氣無法侵入積體電路，可大量提 昇產品的良率，進而降低生產的成本。 第二實施例 請參考圖四，爲本發明所述雷射修護窗的剖面示意圖， 其結構包括一複晶矽層10，其中一區段爲斷路區域20 ; —介 電層30，覆蓋在該複晶矽層10及該斷路區域20的表面；三個 金屬層間介電層40和一保護層50，順序形成在該介電層上 30 ; —保護環60，包括有三個貫通所述金屬層間介電層之環 狀金屬插塞(分別是第一環狀金屬插塞71、第二環狀金屬插 塞72、第三環狀金屬插塞73)及四個環狀金屬層(分別是第一 7 本紙張尺度適用中國國家標準（CNS ) A4規格（210 X 297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝· 訂 經濟部中央標準局員工消費合作社印製 A 7 B7 五、發明説明（7) 環狀金屬層81、第二環狀金屬層82、第三環狀金屬層83、第 四環狀金屬層84);二延伸金屬插塞90，位於該保護環60內 並與該保護環隔離，其底端分別連接於該複晶矽層之斷路區 域20的兩端，並延伸形成於所述金屬層間介電層40 ; —連接 金屬層100，與所述保護環內第三環狀金屬層位於同一平 面，形成在該延伸金屬插塞90之頂端，做爲該雷射修護窗的 熔絲。 所述複晶矽層是積體電路的第一複晶矽、第二複晶矽、 或第三複晶矽。所述介電層爲氧化矽層，其厚度介於0.5微 米至1.1微米之間。所述金屬層間介電層爲氧化矽層，其厚 度介於1.0微米至2.0微米之間》所述保護環位於該介電層之 上，由第一環狀金屬層、第一環狀金屬插塞、第二環狀金屬 層、第二環狀金屬插塞、第三環狀金屬層、第三環狀金屬插 塞、和第四環狀金屬層由下而上依序形成。 本實施例所述之雷射修護窗以第三金屬層做爲熔絲，所 述第三金屬層上方之氧化矽層遠較傳統以複晶矽層做爲熔絲 結構之氧化矽層爲薄。當触刻此氧化矽層以形成雷射修護窗 時，蝕刻終止點的控制將容易許多。因此熔絲上方的氧化矽 保護罩的厚度將可較精確地控制。此外本實施例所述之雷射 修護窗的窗口較淺，由金屬層所形成的保護環得以完全涵蓋 保護住所述窗口，外界的水氣無法侵入積體電路，可大量提 昇產品的良率，進而降低生產的成本。 第三實施例 8 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐）""""' I - 批衣1T-^-----Ί (請先閱讀背面之注意事項再填寫本頁) A7 B7 經濟部中央樣隼局員工消費合作杜印製 五、發明説明（/) 請參考圖五，爲本發明所述雷射修護窗的剖面示意圖， 其結構包括一複晶矽層10 ’其中一區段爲斷路區域20 ; —介 電層30，覆蓋在該複晶矽層10及該斷路區域20的表面；三個 金屬層間介電層40和一保護層50 ’順序形成在該介電層上 3〇 保護環60，包括有二個貫通所述金屬層間介電層之環 狀金屬插塞(分別是第一環狀金屬插塞71、第二環狀金屬插 塞72)及三個環狀金屬層(分別是第一環狀金屬層81、第二環 狀金屬層82、第三環狀金屬層83);二延伸金屬插塞90，位 於該保護環60內並與該保護環隔離，其底端分別連接於該複 晶矽層之斷路區域20的兩端，並延伸形成於所述金屬層間介 電層40 ; —連接金屬層100，與所述保護環內第二環狀金屬 層位於同一平面，形成在該延伸金屬插塞90之頂端，做爲該 雷射修護窗的熔絲。 所述複晶矽層是積體電路的第一複晶矽、第二複晶矽、 或第三複晶矽。所述介電層爲氧化矽層，其厚度介於0.5微 米至U微米之間。所述金屬層間介電層爲氧化矽層，其厚 度介於1.0微米至2.0微米之間。所述保護環位於該介電層之 上，由第一環狀金屬層、第一環狀金屬插塞、第二環狀金屬 層、第二環狀金屬插塞、第三環狀金屬層由下而上依序形 成。 本實施例所述之雷射修護窗以第三金屬層做爲熔絲，所 述第三金屬層上方之氧化矽層遠較傳統以複晶矽層做爲熔絲 結構之氧化矽層爲薄。當蝕刻此氧化矽層以形成雷射修護窗 時’蝕刻終止點的控制將容易許多。因此熔絲上方的氧化矽 _ 9 _ _ I-- (請先聞讀背面之注意事項再填寫本頁)Λ Λ Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 5. Description of the invention (') Detailed description: The technical field of the invention: The present invention relates to the structure of a laser repair window for integrated circuits. 2. Background of the Invention: The manufacturing method of integrated circuit memory elements is to form a large number of memory bits on a wafer and connect the memory bits to form a memory element array as a storage device for the memory elements. There are hundreds of steps in the integrated circuit manufacturing process. During the manufacturing process, it is unavoidable due to uneven steps such as deposition and etching, or defects caused by some impurities in the chemical substance, which greatly reduces the yield of the product. . An integrated circuit is composed of millions or even hundreds of millions of memory cells. A poorly fabricated integrated circuit often does not have all memory cells defective. Sometimes only a few (or even only one) memory cells are defective. In order to effectively improve the yield of the product and thus reduce the production cost, when designing the integrated circuit, a number of extra spare bits are designed. When the completed integrated circuit has only a few defects, the spare bits can be cut off by laser light. The fuse of the circuit allows the spare bit to replace the damaged bit, and the integrated circuit can be repaired and operated normally. To make the fuse area of the integrated circuit, a window needs to be formed above the fuse area to allow the laser light to enter, but water and gas will enter the fuse area from the contact window, and then enter the integrated circuit through the dielectric layer, causing the integrated circuit. Circuit pollution and metal wire corrosion affect the normal operation of integrated circuits. Therefore, during the fabrication of integrated circuit fuses, a protective ring structure is usually made around the fuse area to isolate the integrated circuit from laser repair_ 2 凡 度 ϋϋ 家 料 （CNS M4 Specifications (210X297mm) ------------ ^ ------ iT ------ ^ --- (Please read the precautions on the back before filling this page) Economy Printed by the Consumers 'Cooperative of the Ministry of Standards and Technology of the People's Republic of China 5. Inventive (, c') window to prevent water vapor or pollution from entering the integrated circuit from the dielectric layer. This entire structure is called a laser repair window. Please refer to Figure 1 Is a schematic structural cross-sectional view of a conventional laser repair window containing a fuse. The laser repair window includes a polycrystalline silicon layer 10 on a substrate 5 as a fuse; a dielectric layer 30 / a plurality of metal interlayer dielectrics. The multi-layer structure of the layer 40 / protective layer 50 covers the surface of the polycrystalline silicon layer; a protective ring includes a plurality of annular metal plugs 70 and a plurality of annular metals penetrating through the metal interlayer dielectric layer Layer 80. In order to protect the molten wire from being damaged before the laser is repaired, a layer with a thickness of 2000 angstroms to 10,000 angstroms must be kept above the fuse. Silicone is used as a protective cover. The thickness of the protective cover must be strictly controlled. If it is too thin, the effect of protecting the fuse cannot be achieved. However, if the protective cover is too thick, the laser light cannot pass through and the laser repair cannot be performed. The traditional structure has the following two serious shortcomings: (1) This traditional structure uses a polycrystalline silicon layer as a fuse. The polycrystalline silicon has a dielectric layer, several metal interlayer dielectric layers, and a protective layer. Each of the layers is formed of silicon oxide, so there is a silicon oxide layer over 6 microns thick on the fuse. When a laser repair window is formed, this silicon oxide layer needs to be etched to only 2000 Angstroms left To 10,000 Angstroms, the etch termination point can only be controlled by the etch time. Because the etch rate is not easy to control stably, the thickness of the silicon oxide protective cover above the fuse is often too thick or too thin to form a good laser repair window (2) The window of this traditional structure is extremely deep, and the protective ring formed by the metal layer cannot completely cover and protect the window, and the external water and gas are still 3 ^ The paper size applies the Chinese National Standard (CNS) A4 specification (210X 2 97 mm) ----------- Yi --------- 1T ------. # (Please read the notes on the back before filling out this page) Central Bureau of Standards, Ministry of Economic Affairs Printed by the Consumer Cooperative Cooperative 5. Description of the invention (<) The integrated circuit can be penetrated by the dielectric layer under the protection ring, causing the integrated circuit to be polluted and corroded by the metal wires, affecting the normal operation of the integrated circuit. 3. Brief description of the invention Description: The main purpose of the present invention is to provide a structure of a laser repair window for an integrated circuit. A secondary object of the present invention is to provide a structure of a fuse in a laser repair window. Another object of the present invention is to provide The utility model relates to a protective ring structure for a laser repair window, which can completely surround the laser repair window, and effectively prevent water and gas from entering the integrated circuit. The structure of the laser repair window according to the present invention includes a polycrystalline silicon layer, of which a section is an open area; a multilayer structure of a dielectric layer / a plurality of metal interlayer dielectric layers / protective layers is covered on the complex A crystalline silicon layer and the surface of the cut-off area; a protection ring including a plurality of ring-shaped metal plugs and a plurality of ring-shaped metal layers penetrating through the metal interlayer dielectric layer; two extended metal plugs located on the protection ring Inside and isolated from the protection ring, the bottom ends of which are respectively connected to both ends of the open circuit region of the polycrystalline silicon layer and extend to form the interlayer dielectric layer; a connecting metal layer is connected to the protection ring One of the annular metal layers is located on the same plane, and is formed on the top of the extended metal plug, and is used as a fuse for the laser repair window. 4. Schematic illustration: Figure 1 is a schematic structural sectional view of a traditional laser repair window. FIG. 2 is a design layout diagram of a laser repair window in the present invention. Fig. 3 is a schematic structural cross-sectional view of a laser repair window in the first embodiment of the present invention. 4 This paper size applies to China National Standard (CNS) A4 specification (210X297 mm) -I--1} I. 1} III-* ^-I ......----11 ·- I Τ »4 ° (Please read the precautions on the back before filling out this page) B7 Printed by the Consumer Cooperatives of the Central Commission of the Ministry of Economic Affairs 5. Description of the invention (D) Figure 4 shows the laser repair in the second embodiment of the invention Schematic sectional view of the window structure. Fig. 5 is a schematic structural sectional view of a laser repair window in a third embodiment of the present invention. 5. Description of drawing number: 5- Substrate 10- Multicrystalline silicon layer 20- Disconnect area 30- Dielectric layer 31- Dielectric layer / Metal interlayer dielectric layer / Protective layer 40-Metal interlayer dielectric layer 50-Protective layer 60 -Protective ring 70-Ring metal plug 71-First ring metal plug 72-Second ring metal plug 73-Third ring metal plug 80-Ring metal layer 81-First ring metal Layer 82-second ring metal layer 83-third ring metal layer 84-fourth ring metal layer 90-extended metal plug 100-connecting metal layer-^ ---, ----- pack- ----- Order (Please read the precautions on the back before filling this page) Please refer to Figure 2 for the layout of the laser repair window according to the present invention, which includes a polycrystalline silicon layer 10, one of which The segment is an open area; a multilayer structure of a dielectric layer / metal interlayer dielectric layer / protective layer 31 covers the surface of the polycrystalline silicon layer 10 and the open area; a guard ring 60, including a plurality of Ring metal plugs and a plurality of ring metal layers penetrating the dielectric layer between the metal layers; two extended metal plugs 90 are located in the protection ring 60 and are isolated from the protection ring, and the bottom ends are respectively It is connected to both ends of the cut-off area of the polycrystalline silicon layer, and extends to form the interlayer dielectric layer. A metal layer 100 is connected to the 5 paper sizes to the Chinese National Standard (CNS) A4 specification (210X297). (Mm) Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs Λ 7 Β7 V. Description of the invention (Γ) One of the ring metal layers of the protection ring is located on the same plane and is formed on the top of the extended metal plug 90 as the mine Shoot the fuse of the repair window. In the following, an integrated circuit having a four-layer metal layer structure will be described as an embodiment in detail. The integrated circuit with a four-layer metal layer structure includes three ring-shaped metal plugs and four ring-shaped metal layers. Anyone familiar with integrated circuit technology will understand that the principles and spirit of the present invention are applicable to any integrated circuit with one or more metal layer structures. First embodiment, please refer to FIG. 3, which is a schematic cross-sectional view of a laser repair window according to the present invention. The structure includes a polycrystalline silicon layer 10 on a substrate 5, one of which is a cut-off region 20; A layer 30 covering the surface of the polycrystalline silicon layer 10 and the cut-off region 20; three metal interlayer dielectric layers 40 and a protective layer 50 are sequentially formed on the dielectric layer 30; a protective ring including three A ring-shaped metal plug (the first ring-shaped metal plug 71, the second ring-shaped metal plug 72, and the third ring-shaped metal plug 73) penetrating the metal interlayer dielectric layer and four ring-shaped metals Layers (respectively the first ring-shaped metal layer 81, the second ring-shaped metal layer 82, the third ring-shaped metal layer 83, and the fourth ring-shaped metal layer 84); two extended metal plugs 90, located in the protection ring and It is isolated from the protection ring, and its bottom ends are respectively connected to both ends of the cut-off region 20 of the polycrystalline silicon layer, and extend to form the metal interlayer dielectric layer 40;-connect the metal layer 100, and the protection The second annular metal layer in the ring is located on the same plane and is formed on the top of the extended metal plug 90 as the thunder. Fuse repair windows. 6 This paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm)-, --- ^ ----- Packing ------ Order (Please read the precautions on the back before filling in this Page) Printed by A7 B7 of the Consumers' Cooperatives of the Bureau of Loss and Standards of the Ministry of Economic Affairs. 5. Description of the Invention (P) The polycrystalline silicon layer is the first polycrystalline silicon, the second polycrystalline silicon, or the third of the integrated circuit. Polycrystalline silicon. The dielectric layer is a silicon oxide layer, and its thickness is between 0.5 μm and 1.1 μm. The metal interlayer dielectric layer is a silicon oxide layer having a thickness between 1.0 micrometer and 2.0 micrometers. The guard ring is located on the dielectric layer, and includes a first annular metal layer, a first annular metal plug, a second annular metal layer, a second annular metal plug, a third annular metal layer, The third annular metal plug and the fourth annular metal layer are sequentially formed from bottom to top. The laser repair window described in this embodiment uses the second metal layer as the dissolving wire, and the silicon oxide layer above the second metal layer is far more than the traditional silicon oxide layer with the polycrystalline silicon layer as the fuse structure. thin. When this silicon oxide layer is etched to form a laser repair window, the control of the etch termination point will be much easier. Therefore, the thickness of the silicon oxide protective cover above the fuse can be controlled more accurately. In addition, the window for the laser repair window described in this embodiment is relatively shallow, and the protective ring formed by the metal layer can completely cover and protect the window. The external water and gas cannot penetrate the integrated circuit, which can greatly improve the yield of the product. , Thereby reducing the cost of production. For a second embodiment, please refer to FIG. 4, which is a schematic cross-sectional view of a laser repair window according to the present invention. The structure includes a polycrystalline silicon layer 10, one of which is a cut-off region 20; a dielectric layer 30 covering the The polycrystalline silicon layer 10 and the surface of the cut-off region 20; three metal interlayer dielectric layers 40 and a protective layer 50 are sequentially formed on the dielectric layer 30; a protective ring 60 includes three penetrating the metal Ring metal plugs of the interlayer dielectric layer (first ring metal plug 71, second ring metal plug 72, third ring metal plug 73) and four ring metal layers (respectively The 7th paper size applies the Chinese National Standard (CNS) A4 specification (210 X 297 mm) (Please read the notes on the back before filling out this page)-Binding and Printing Printed by the Central Consumers Bureau of the Ministry of Economic Affairs Consumer Cooperatives 7 B7 V. Description of the invention (7) Ring metal layer 81, second ring metal layer 82, third ring metal layer 83, fourth ring metal layer 84); two extended metal plugs 90, located in the protection Inside the ring 60 and isolated from the protection ring, the bottom ends of the ring 60 are respectively connected to the open circuit regions of the polycrystalline silicon layer 20 at both ends and extending to form the metal interlayer dielectric layer 40;-connected to the metal layer 100, located on the same plane as the third annular metal layer in the guard ring, and formed on the top of the extended metal plug 90 , As the fuse for the laser repair window. The polycrystalline silicon layer is a first polycrystalline silicon, a second polycrystalline silicon, or a third polycrystalline silicon of an integrated circuit. The dielectric layer is a silicon oxide layer, and its thickness is between 0.5 μm and 1.1 μm. The metal interlayer dielectric layer is a silicon oxide layer with a thickness between 1.0 μm and 2.0 μm. The protection ring is located on the dielectric layer and is inserted by a first ring-shaped metal layer and a first ring-shaped metal layer. The plug, the second annular metal layer, the second annular metal plug, the third annular metal layer, the third annular metal plug, and the fourth annular metal layer are sequentially formed from bottom to top. The laser repair window described in this embodiment uses a third metal layer as a fuse, and the silicon oxide layer above the third metal layer is far more than the conventional silicon oxide layer with a polycrystalline silicon layer as a fuse structure. thin. When this silicon oxide layer is etched to form a laser repair window, the control of the etching termination point will be much easier. Therefore, the thickness of the silicon oxide protective cover above the fuse can be controlled more accurately. In addition, the window of the laser repair window described in this embodiment is relatively shallow, and the protective ring formed by the metal layer can completely cover and protect the window. The external water and gas cannot penetrate the integrated circuit, which can greatly improve the yield of the product. , Thereby reducing the cost of production. Third embodiment 8 This paper size applies the Chinese National Standard (CNS) A4 specification (210X 297 mm) " " " " 'I-Batch clothing 1T-^ ----- Ί (Please read the back first Please pay attention to this page, please fill in this page) A7 B7 Printed by the Consumer Cooperative Bureau of the Central Bureau of Economic Affairs of the Ministry of Economic Affairs. 5. Description of the Invention (/) Please refer to Figure 5, which is a schematic sectional view of the laser repair window according to the present invention. It includes a polycrystalline silicon layer 10 ', one of which is a cut-off region 20; a dielectric layer 30 covering the surface of the polycrystalline silicon layer 10 and the cut-off region 20; three metal interlayer dielectric layers 40 and a protection A layer 50 ′ is sequentially formed on the dielectric layer. A guard ring 60 includes two ring-shaped metal plugs (the first ring-shaped metal plug 71 and the second ring respectively) penetrating the metal interlayer dielectric layer. Metal plug 72) and three ring-shaped metal layers (the first ring-shaped metal layer 81, the second ring-shaped metal layer 82, and the third ring-shaped metal layer 83, respectively); two extended metal plugs 90, located in the The guard ring 60 is isolated from the guard ring, and the bottom ends of the guard ring 60 are respectively connected to both ends of the cut-off region 20 of the polycrystalline silicon layer, and extend Formed on the metal interlayer dielectric layer 40;-connected to the metal layer 100, located on the same plane as the second annular metal layer in the guard ring, and formed on the top of the extended metal plug 90 as the laser repair Fuse for window protection. The polycrystalline silicon layer is a first polycrystalline silicon, a second polycrystalline silicon, or a third polycrystalline silicon of an integrated circuit. The dielectric layer is a silicon oxide layer, and its thickness is between 0.5 μm and U μm. The metal interlayer dielectric layer is a silicon oxide layer having a thickness between 1.0 micrometer and 2.0 micrometers. The guard ring is located on the dielectric layer, and is composed of a first annular metal layer, a first annular metal plug, a second annular metal layer, a second annular metal plug, and a third annular metal layer. Formed sequentially from bottom to top. The laser repair window described in this embodiment uses a third metal layer as a fuse, and the silicon oxide layer above the third metal layer is far more than the conventional silicon oxide layer with a polycrystalline silicon layer as a fuse structure. thin. When the silicon oxide layer is etched to form a laser repair window, the control of the etch termination point will be much easier. So the silicon oxide above the fuse _ 9 _ _ I-- (Please read the precautions on the back before filling this page)
,1T 本紙張尺度適用中國國家榡準（CNS ) M規格（21〇><297公楚） 經濟部中央標隼局員工消费合作社印装 五、發明説明（f) 保護罩的厚度將可較精確地控制。此外本實施例所述之雷射 修護窗的窗口較淺，由金屬層所形成的保護環得以完全涵蓋 保護住所述窗口，外界的水氣無法侵入積體電路，可大量提 昇產品的良率，進而降低生產的成本。 本發明係透過此三具體實施例加以敘述，說明本發明的 原則和精神，應可瞭解本發明並不侷限於所揭露的具體實施 例。例如所述雷射修護窗的熔絲，亦可與保護環內第一環狀 金屬層位於同一平面，另外可與保護環內第四環狀金屬層位 於同一平面，都同樣具有本發明所包含的原則和精神，因此 都屬於本發明的範圍。 本發明所述積體電路之雷射修護窗的結構具有如下優 點： (1) 本發明所述之雷射修護窗以金屬層做爲熔絲，所述 金屬層上方之氧化矽層遠較傳統以複晶矽層做爲熔絲結構之 氧化矽層爲薄。當蝕刻此氧化矽層以形成雷射修護窗時，蝕 刻終止點的控制將容易許多。因此熔絲上方的氧化矽保護罩 的厚度將可較精確地控制。 (2) 本發明所述之雷射修護窗的窗口較淺，由金屬層所 形成的保護環得以完全涵蓋保護住所述窗口，外界的水氣無 法侵入積體電路，可大量提昇產品的良率，進而降低生產的 成本。 (3) 本發明所述之熔絲的下方尙有極厚的氧化矽層，因 此在窗口蝕刻的過程不會對其下方的矽基底造成損壞。 10 用中國國家標準（CNS ) A4規格（210X297公釐） (請先閱讀背面之注意事項再填寫本頁) -裝 Λ； Β· 五、發明説明（’；） 本發明係透過具體實施例加以敘述，說明本發明的原則 和精神，應可瞭解本發明並不侷限於所揭露的具體實施例， 因此，在本發明之原則和範圍底下所作任何相關細節上之變 化，都應視爲本發明的進一步實施例。 (請先閱讀背面之注意事項再填寫本頁) 裝 、1Τ 經濟部中央標隼局員工消費合作社印製 11 本紙張尺度適用中國國家標準（CN’S ) Α4規格（210X 297公釐）, 1T This paper size applies to China National Standards (CNS) M specifications (21〇 < 297 Gongchu) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (f) The thickness of the protective cover will be More precise control. In addition, the window of the laser repair window described in this embodiment is relatively shallow, and the protective ring formed by the metal layer can completely cover and protect the window. The external water and gas cannot penetrate the integrated circuit, which can greatly improve the yield of the product. , Thereby reducing the cost of production. The present invention is described through these three specific embodiments to illustrate the principles and spirit of the present invention. It should be understood that the present invention is not limited to the specific embodiments disclosed. For example, the fuse for the laser repair window may also be located on the same plane as the first ring metal layer in the protective ring, and may also be on the same plane as the fourth ring metal layer in the protective ring. The principles and spirit involved are therefore within the scope of the invention. The structure of the laser repair window of the integrated circuit of the present invention has the following advantages: (1) The laser repair window of the present invention uses a metal layer as a fuse, and the silicon oxide layer above the metal layer is far away. It is thinner than the traditional silicon oxide layer that uses the polycrystalline silicon layer as the fuse structure. When the silicon oxide layer is etched to form a laser repair window, the control of the etching termination point will be much easier. Therefore, the thickness of the silicon oxide protective cover above the fuse can be controlled more accurately. (2) The window of the laser repair window according to the present invention is relatively shallow, and the protective ring formed by the metal layer can completely cover and protect the window. The external water and gas cannot invade the integrated circuit, which can greatly improve the quality of the product. Rate, thereby reducing the cost of production. (3) There is a very thick silicon oxide layer under the fuse according to the present invention. Therefore, the silicon substrate underneath will not be damaged during the window etching process. 10 Use Chinese National Standard (CNS) A4 specification (210X297 mm) (Please read the precautions on the back before filling this page)-Install Λ; Ⅴ. Description of the invention (';) The invention is implemented through specific embodiments The description describes the principles and spirit of the present invention. It should be understood that the present invention is not limited to the specific embodiments disclosed. Therefore, any changes made in the relevant details under the principle and scope of the present invention should be regarded as the present invention. A further embodiment. (Please read the precautions on the back before filling out this page) Packing, printed by the 1T Consumer Standards Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 11 This paper size applies to the Chinese National Standard (CN ’S) Α4 size (210X 297 mm)