TW382819B - Nanoscale mott-transition molecular field effect transistor - Google Patents

Nanoscale mott-transition molecular field effect transistor Download PDF

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Publication number
TW382819B
TW382819B TW087112893A TW87112893A TW382819B TW 382819 B TW382819 B TW 382819B TW 087112893 A TW087112893 A TW 087112893A TW 87112893 A TW87112893 A TW 87112893A TW 382819 B TW382819 B TW 382819B
Authority
TW
Taiwan
Prior art keywords
transistor
patent application
scope
array
gate
Prior art date
Application number
TW087112893A
Other languages
English (en)
Chinese (zh)
Inventor
Gupta Arunuba
Anthony Mizevich James
Melton Newns Dennis
Albert Scott Bruce
Chi Tsuei Chan
Original Assignee
Ibm
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ibm filed Critical Ibm
Application granted granted Critical
Publication of TW382819B publication Critical patent/TW382819B/zh

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823828—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate conductors, e.g. particular materials, shapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
    • H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
    • H01L21/8232—Field-effect technology
    • H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
    • H01L21/8238—Complementary field-effect transistors, e.g. CMOS
    • H01L21/823857—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the gate insulating layers, e.g. different gate insulating layer thicknesses, particular gate insulator materials or particular gate insulator implants

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Thin Film Transistor (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
TW087112893A 1997-10-01 1998-08-05 Nanoscale mott-transition molecular field effect transistor TW382819B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US94202297A 1997-10-01 1997-10-01

Publications (1)

Publication Number Publication Date
TW382819B true TW382819B (en) 2000-02-21

Family

ID=25477472

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087112893A TW382819B (en) 1997-10-01 1998-08-05 Nanoscale mott-transition molecular field effect transistor

Country Status (3)

Country Link
JP (1) JP3030285B2 (ja)
KR (1) KR100304399B1 (ja)
TW (1) TW382819B (ja)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6890766B2 (en) 1999-03-17 2005-05-10 International Business Machines Corporation Dual-type thin-film field-effect transistors and applications
GB2362262A (en) * 2000-05-11 2001-11-14 Ibm Thin film transistor (TFT) with conductive channel which may be p-type or n-type in response to a gate voltage
KR100503421B1 (ko) * 2003-05-20 2005-07-22 한국전자통신연구원 채널 재료로서 절연체-반도체 상전이 물질막을 이용한전계 효과 트랜지스터 및 그 제조 방법
CN100508238C (zh) 2004-05-11 2009-07-01 Lg化学株式会社 有机电子器件
KR100609699B1 (ko) * 2004-07-15 2006-08-08 한국전자통신연구원 급격한 금속-절연체 전이 반도체 물질을 이용한 2단자반도체 소자 및 그 제조 방법
JP4853859B2 (ja) * 2005-06-27 2012-01-11 独立行政法人情報通信研究機構 非導電性ナノワイヤー及びその製造方法
KR100927602B1 (ko) * 2007-12-07 2009-11-25 한국전자통신연구원 금속-절연체 전이(ｍｉｔ) 물질 기반의 메모리 셀 및 그메모리 셀의 제조방법
JP5453628B2 (ja) * 2011-09-20 2014-03-26 独立行政法人情報通信研究機構 非導電性ナノワイヤー及びその製造方法

Also Published As

Publication number Publication date
KR19990036644A (ko) 1999-05-25
KR100304399B1 (ko) 2001-11-15
JP3030285B2 (ja) 2000-04-10
JPH11163365A (ja) 1999-06-18

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