TW380303B - Gold alloy thin wire for semiconductor devices - Google Patents
Gold alloy thin wire for semiconductor devices Download PDFInfo
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- TW380303B TW380303B TW86110146A TW86110146A TW380303B TW 380303 B TW380303 B TW 380303B TW 86110146 A TW86110146 A TW 86110146A TW 86110146 A TW86110146 A TW 86110146A TW 380303 B TW380303 B TW 380303B
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- C—CHEMISTRY; METALLURGY
- C22—METALLURGY; FERROUS OR NON-FERROUS ALLOYS; TREATMENT OF ALLOYS OR NON-FERROUS METALS
- C22C—ALLOYS
- C22C5/00—Alloys based on noble metals
- C22C5/02—Alloys based on gold
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/43—Manufacturing methods
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/4501—Shape
- H01L2224/45012—Cross-sectional shape
- H01L2224/45015—Cross-sectional shape being circular
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
- H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/45144—Gold (Au) as principal constituent
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/386—Wire effects
- H01L2924/3861—Sag
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/38—Effects and problems related to the device integration
- H01L2924/386—Wire effects
- H01L2924/3862—Sweep
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Conductive Materials (AREA)
- Wire Bonding (AREA)
Abstract
Description
五、發明説明( 發明背景V. Description of the invention
經濟部中央標準局員工消費合作社印製 1 ·發明領域 本發明係關於一種 或電連接電極至外部;丨線α金薄線供於半導體裝置上接線 2.相關技術之說明 目前,半導體装置 接至外部引線。 之電路繞線電極主要係靠接線連 目前,半導體举 進-步縮小1C晶片Μ積體及功能多元化進展傾向需要 裝置。欲實現接腳或端包含需要高密度包裝半導體 片去除並增加接線幅員。對:=’内部引線必須由石夕晶 要嚴格控制迴路形狀 '咖之長接線幅員,需 ’包含筆直及減少分散。接腳备θ 加也需要減少或精細 〜刀妾腳數目增 線節距⑽㈣或以下距,例如最小接 欲達成接腳數目的择加薄的線。 良接=置及開發具有;良==’曾經努力改 回雄度包裝半導體裝置中,於、” ,最主要問題係防止鄰近金屬、’ 戈的長跨距 非期望的連接俾成功地4=及線與晶片或内, 當接線跨距加大時,雖4二:腳的數目及細小節距。 量及防止線Μ,路控制以確料路重 使用多種環氧樹脂模塑時,法聽地迴路彎曲。 隨著接線跨距的加大而增加 ㈣而跡’知拂程度 非期間的連接。 因此經常出現鄰近金屬線間 ί請先閣讀背面之注意事項再填寫本頁jPrinted by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 1. Field of the Invention The present invention relates to a type or electrical connection of electrodes to the outside; 丨 line α gold thin wire for semiconductor device wiring 2. Description of related technology External leads. The circuit winding electrodes are mainly connected by wiring. At present, semiconductors are progressively shrinking the 1C chip M product and the trend of diversified functions requires devices. To achieve pin or terminal containment requires high-density packaging semiconductor chips to remove and increase the width of the wiring. Right: = 'The internal lead must be made by Shi Xijing. To strictly control the shape of the loop' The long wiring width of the coffee needs to be straight and reduce dispersion. The pin θ addition also needs to be reduced or finer ~ the number of blades is increased by the line pitch ⑽㈣ or less, for example, a thinner line with a minimum number of pins is required. Good connection = set and development has; good = = 'I have worked hard to change back to the masculine packaging semiconductor device, Yu, ", the main problem is to prevent the adjacent metal, the long-span undesired connection 戈 successfully 4 = And the wire and the chip or inside, when the wiring span is increased, although the number of pins and the small pitch is 42. Measure and prevent the wire M, and the road control to ensure the material is heavy. When using a variety of epoxy resin molding methods, The ground loop is bent. With the increase of the wiring span, the distance increases and the connection is not known. Therefore, there are often adjacent metal wires. Please read the precautions on the back before filling in this page.
、一1Τ Q! -4- A 7 ------------B7 . 五、發明説明~^ ' 一 ^鈿小接線節距也需要使線變薄或線直徑縮小,因而使 侍迴路形成時線彎曲的問題,及樹脂模塑過程中,線掃拂 的問題更嚴重’由線強度隨著線直徑的平方呈比例縮小可 預期。接線節距縮小也需要減小珠大小,因而殊難以接線 由線變薄及確保接線觀點看來,曾經研究添加劑合金 化元素對金合金薄線的影響。例如日本特許公開案第 119148號揭示cu為有效添加元素。但,cu之存在量須為j 至5 wt°/。才能提供實質效果,但如此高量可能引起珠形狀 缺陷且不合意地硬化。日本特許公開案第2-215140號也揭 不添加選擇用量之Mw,Cu及Ni於金線。其唯一關係為抑 制AWA1接頭形成化學化合物。 發明概述 本發明之目的係提供一種較佳適用於高密度包裝半導 體裝置之金合金薄線,其中樹脂模塑時線的變形減少而成 功地達成接線節距縮小及線變薄。 經濟部中央標準局員工消費合作社印製 欲達此目的’發明人進行多方面研究高密度包裝半導 體裝置需要的線性質,結果發現最主要的技術重點係減少 迴路形成及樹脂模塑時線的變形。 考X明人進一步研究金合金薄線各種合金化元素與迴路 筆直度及線掃拂間的關係’首次發現合併添加Cu及Ca可 有效抑制線掃拂,即當Cu及Ca以有限的Cu/Ca含量比存在 時最有效。 發明人也發現添加Pt,Pd及In可改良加熱影響區段線 本紙浪尺度適用中國國豕標準(Qvs ) A4規格(210X 297公鳌) 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明,(3 ) 強度接近珠;及添加Y,La及Ce可改良樹脂模塑時之線掃 拂抗性。 欲達成本發明之第一態樣之目的,提供一種金合金薄 線包括0.015至1.0^^%匸11,0.0002至0.02评1°/。€3,及差 額包括Au及無法避免的雜質。 根據本發明之第二態樣,也提供一種金合金薄線包括 0:1 至 1·0 wt% Cu,0.001 至0.02 wt°/。Ca,及差額包括Au及 無法避免的雜質。 根據第三態樣,第一或第二態樣之金合金薄線具有 Cu/Ca重量含量比為40至800。 根據第四態樣,第一、第二或第三態樣之金合金薄線 又含有一種或多種Pt,Pd及In其總量為0.01至3.0 wt%。 根據第五態樣,第一、第二或第三態樣之金合金薄線 又含有一種或多種Y,La及Ce其總量為0.0003至0.03 wt% 〇 根據第六態樣,第一、第二或第三態樣之金合金薄線 又含有一種或多種Pt,Pd及In其總量為0.01至3.0 wt%及一 種或多種Y,La及Ce總量為0.0003至0.03 wt%。 較佳具體例之說明 本發明之金合金薄線將敘述其細節。 欲估計迴路筆直性及樹脂模塑時線之掃拂抗性,需要 使用的金屬薄線進行接線,然後測量如此形成的線迴路變 形,樹脂模塑後測量線接線樣品、線掃拂。由於迴路變性 及線掃拂明顯依接線裝置及/或樹脂模塑裝置之操作參數 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) -6 - (請先聞讀背面之注意事項再填寫本頁)、 1 1 Q! -4- A 7 ------------ B7. 5. Description of the invention ~ ^ '^ 钿 Small wiring pitch also needs to make the wire thinner or the wire diameter smaller, so The problem of bending the wire when the servo circuit is formed, and the problem of wire sweeping during the resin molding process is more serious. It can be expected that the strength of the wire decreases proportionally with the square of the wire diameter. The reduction of the wiring pitch also requires the reduction of the bead size, which makes it difficult to wire. From the viewpoint of thinning the wire and ensuring the wiring, the influence of additive alloying elements on thin gold alloy wires has been studied. For example, Japanese Patent Laid-Open No. 119148 discloses that cu is an effective added element. However, cu must be present in an amount of j to 5 wt ° /. To provide substantial results, but such high amounts may cause bead-shaped defects and undesirably hardening. Japanese Patent Publication No. 2-215140 also discloses that Mw, Cu, and Ni are not added to the gold wire in a selected amount. Its only relationship is to inhibit AWA1 linkers from forming chemical compounds. SUMMARY OF THE INVENTION The object of the present invention is to provide a thin gold alloy wire suitable for high-density packaging semiconductor devices, in which the deformation of the wire is reduced during resin molding, and the reduction of the wiring pitch and the wire thinning are successfully achieved. Printed by the Consumers' Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs to achieve this goal. The inventor conducted various researches on the linear properties required for high-density packaging semiconductor devices. . Kao Xingren further studied the relationship between various alloying elements of gold alloy thin wires and circuit straightness and line sweeping. For the first time, it was found that the combined addition of Cu and Ca can effectively suppress line sweeping, that is, when Cu and Ca with limited Cu / The Ca content ratio is most effective when present. The inventors also found that the addition of Pt, Pd, and In can improve the paper size of the heating-affected section line. The Chinese national standard (Qvs) A4 specification (210X 297 Gongao) is printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs. The invention explains that (3) the strength is close to beads; and the addition of Y, La, and Ce can improve the line sweep resistance during resin molding. To achieve the object of the first aspect of the invention, a gold alloy thin wire is provided including 0.015 to 1.0 ^^% 匸 11, 0.0002 to 0.02 and 1 ° /. € 3, and the difference includes Au and unavoidable impurities. According to a second aspect of the present invention, there is also provided a gold alloy thin wire including 0: 1 to 1.0 wt% Cu, 0.001 to 0.02 wt ° /. Ca, and the difference includes Au and unavoidable impurities. According to a third aspect, the gold alloy thin wire of the first or second aspect has a Cu / Ca weight content ratio of 40 to 800. According to the fourth aspect, the gold alloy thin wire of the first, second or third aspect further contains one or more Pt, and the total amount of Pd and In is 0.01 to 3.0 wt%. According to a fifth aspect, the gold alloy thin wire of the first, second or third aspect further contains one or more Y, La and Ce in a total amount of 0.0003 to 0.03 wt%. According to the sixth aspect, the first, The second or third aspect of the gold alloy thin wire further contains one or more kinds of Pt, Pd and In in a total amount of 0.01 to 3.0 wt% and one or more kinds of Y, and a total amount of La and Ce is 0.0003 to 0.03 wt%. Description of preferred specific examples The gold alloy thin wire of the present invention will be described in detail. To estimate the straightness of the circuit and the resistance to line sweeping during resin molding, you need to use thin metal wires for wiring, and then measure the deformation of the wire circuit thus formed. After the resin molding, measure the wire wiring samples and wire sweeping. Due to circuit degeneration and wire sweeping, it is obviously according to the operating parameters of the wiring device and / or resin molding device. The paper size is applicable to China National Standard (CNS) A4 specification (210X 297 mm) -6-(Please read the notes on the back (Fill in this page again)
經濟部中央標準局員工消費合作社印製 A7 . , B7 五、發明説明(4 ) 及模塑樹脂種類而定,故難以單獨擷取金屬薄線的材料因 素。 發明人研究迴路筆直度及樹脂模塑時線掃拂與金屬薄 線機械性質(包含抗拉強度,彈性常數,降伏強度)等之 關係,發現隨著拉力試驗測定的斷裂強度的增加,迴路筆 直度改良及樹脂模塑時線掃拂也被抑制。雖然更嚴格分析 需要包含其它性質例如彈性常數,降伏強度及彎折彈性等 ,但容易測量抗拉強度來估計金屬薄線性質供縮小接線節 距及線直徑。 金合金薄線之抗拉強度大體隨著合併添加Cu及Ca而 增加。單獨添加Cu會增加室溫強度但影響太小無法滿足 高密度包裝的需求。 它方面,單獨添加Ca可提高強度,但由於大量添加Ca 時,Ca氧化發生珠形狀瑕疵。Ca量之上限係由珠形狀決 定,單獨添加Ca無法提供足夠強度來縮小線直徑。 表1顯示Cu及Ca添加對抗拉強度的影響。直徑24 之線經由通過水平螺退火並接受拉力試驗測定線的斷裂強 度及彈性常數。由於半導體裝置之金屬薄線通常具有斷裂 伸長率3至5%,故選用退火溫度可提供伸長率為4%者。 由表1可知,合併添加Cu及Ca比較單獨添加Cu或Ca之 最適量所得斷裂強度更增高30至50%。發明人由經驗了解 當金屬薄線具有抗拉強度13.5 gf或以上或彈性常數8500 kgf/mni2或以上時,對約5 mm的長接線跨距而言,線變形可 減少至實際可接受程度。根據本發明之樣品1,其中添加 本纸張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) ---------Μ 裝------訂------1 J :i (-請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印製 A7 _ —— ____ B7 丨 ' 五、發明説明(5 ) ~~~Printed by the Consumers' Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs A7., B7 V. The description of the invention (4) and the type of molding resin, so it is difficult to separate the material factors of the thin metal wires. The inventor studied the relationship between the straightness of the loop and the line sweep during resin molding and the mechanical properties of the thin metal wire (including tensile strength, elastic constant, and drop strength), etc., and found that as the breaking strength measured by the tensile test increased, the loop was straight The degree of improvement and the line sweep during resin molding are also suppressed. Although more rigorous analysis needs to include other properties such as elastic constant, yield strength, and bending elasticity, etc., it is easy to measure the tensile strength to estimate the properties of thin metal wires to reduce the wiring pitch and wire diameter. The tensile strength of thin gold alloy wires generally increases with the combined addition of Cu and Ca. Adding Cu alone will increase the room temperature strength but the effect is too small to meet the needs of high density packaging. In this regard, the addition of Ca alone can increase the strength, but when a large amount of Ca is added, Ca-shaped defects occur in Ca oxidation. The upper limit of the amount of Ca is determined by the shape of the beads, and the addition of Ca alone cannot provide sufficient strength to reduce the wire diameter. Table 1 shows the effects of Cu and Ca additions on the tensile strength. A wire with a diameter of 24 was subjected to a horizontal screw annealing and subjected to a tensile test to determine the breaking strength and elastic constant of the wire. Since the thin metal wires of semiconductor devices usually have an elongation at break of 3 to 5%, the annealing temperature can be selected to provide an elongation of 4%. It can be seen from Table 1 that the optimum tensile strength of Cu and Ca added in combination is 30 to 50% higher than the optimum amount of Cu or Ca added alone. The inventors learned from experience that when a thin metal wire has a tensile strength of 13.5 gf or more or an elastic constant of 8500 kgf / mni2 or more, for a long wiring span of about 5 mm, the wire deformation can be reduced to a practically acceptable level. According to the sample 1 of the present invention, the size of the paper added is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) --------- Μ Packing -------- Order --- --- 1 J: i (-Please read the notes on the back before filling this page) Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs A7 _ —— ____ B7 丨 'V. Description of the Invention (5) ~~~
Cu及Ca可滿足前述條件。 由於下歹〗理由故Cu及Ca含量必須於規定之範圍。當 含量小於〇_〇15糾%或(^含量小於〇〇〇〇2对%時,未 機械性質顯著的改良。它方面,當以含量超過G Q2赠。日; ,於珠頂形成收縮穴或珠的球形度降低;或當Cu含量= 過1_0 wt%時,'線延時的加2硬化增強引起模具加速磨耗 ’經常出現線彎折’隨著線直徑的縮小,此種傾向更為顯 著。一種解決辦法係多次進行中間退火,但其生產過程複 雜。 更佳,Cu含量為0.1至1.0 wtQ/(^Ca含量為〇 〇〇丨至〇 〇2 wt0/。,原因為當Cu含量為0.1 wt%或以上及以含量為〇 001 wt%或以上時,抗拉強度及彈性常數進一步升高。 合併添加Cu及Ca可改良抗拉強度及彈性常數,特別 當Cu/Ca重量含量比係於規定範圍時尤為如此。表1中, 單獨添加Ca對強度產生類似的影響,如樣品(b)及⑷所示 ;它方面,根據本發明之樣品1及2中,等量(^添加至樣 品(b)及(c) ’抗拉強度及彈性常數增高,樣品丨的增加更顯 著。Cu/Ca重量含量比40至800可提供最顯著的組合效應 。含量比為1400之樣品2中,抗拉強度的增加相當小。含 量比為300之樣品1中,獲得抗拉強度高達15紅或以上及 彈性常數高達900 kgf/讓2或以上。 雖然此等元素之改良機轉尚未完全明瞭,但發明人相 信Cu及Ca間具有交互作用而引發沈澱,或於Au基材形成 化合物相提供改良機械性質,特別當Cu及Ca存在於規定 ________ ____________ ___^_ 本紙張尺度適用中國國家標準(CNS ) A4说格(210 X 297公釐) -8 - f請先閲讀背面之注意事項再填寫本頁)Cu and Ca can satisfy the aforementioned conditions. Due to the following reasons, the content of Cu and Ca must be within the specified range. When the content is less than 0.015% or (^ content is less than 0.0002%), there is no significant improvement in mechanical properties. In terms of it, when the content exceeds G Q2, it is a gift. Day; Or the sphericity of the beads is reduced; or when Cu content = more than 1_0 wt%, 'the linear delay increases by 2 and the hardening enhances the mold's accelerated wear.' Line bending often occurs' As the diameter of the wire decreases, this tendency is more significant One solution is to perform intermediate annealing multiple times, but the production process is complicated. Better, the Cu content is 0.1 to 1.0 wtQ / (^ Ca content is 0.0000 丨 to 002 wt% /., Because the Cu content is When the content is 0.1 wt% or more and the content is 0.001 wt% or more, the tensile strength and elastic constant are further increased. Combined addition of Cu and Ca can improve the tensile strength and elastic constant, especially when the Cu / Ca weight content ratio is This is particularly the case when it is within the specified range. In Table 1, the addition of Ca alone has a similar effect on the strength, as shown in samples (b) and ⑷; in terms of it, in samples 1 and 2 according to the present invention, the same amount (^ addition To samples (b) and (c) 'Tensile strength and elastic constant increase, the sample The increase is more significant. The Cu / Ca weight content ratio of 40 to 800 provides the most significant combination effect. In sample 2 with a content ratio of 1400, the increase in tensile strength is quite small. In sample 1 with a content ratio of 300, the resistance is obtained. The tensile strength is as high as 15 red or more and the elastic constant is as high as 900 kgf / ranging 2 or more. Although the improvement mechanism of these elements is not fully understood, the inventors believe that there is an interaction between Cu and Ca to cause precipitation, or the Au-based The material forming compound phase provides improved mechanical properties, especially when Cu and Ca are present in the regulations ________ ____________ ___ ^ _ This paper size is applicable to the Chinese National Standard (CNS) A4 grid (210 X 297 mm) -8-f Please read first (Notes on the back then fill out this page)
經濟部中夬襟準局員工消費合作社印製 A7 _____________B7 1 五、發明説明(6 ) . ~~ 〜-— 的Cu/Ca重量含量比範圍時尤為如此。 重量含量比Cu/Ca較佳於4G至_之範圍來藉合併添 加Cu及Ca提供改良的抗拉強度及锋性常數。雜合併添 加Cu及Ca於前述較佳範圍以外仍然有效,但重量含量比 大於獅僅能提供抗㈣度小幅度增高,及《含量比小 於4〇可提高抗拉強度但引起溶化線形成的珠硬度增高而於 接線期間傷害下方矽晶片的問題。 線強度係與線直徑平方成比例,因此隨著線直徑的縮 小’線材料強度必須增高俾確保線掃拂抗性。直徑為25至 3〇 Am之金合金薄線為目前—般使用,但不.適合精細節 距。根據本發明經由合併添加。及以具有改良強度的金 。金薄線較佳用於25 /zm或以下之較小線直徑。經由合 :添加C u及C a改良的強度對於線直徑2 3 # m或以下時特 佳,其中線強度比較25 /zm線增高25%或以上。 欲縮小接線節距,線框必須具有較少内線,但運輪期 間由於擺動可能引發問題。欲提供防擺動性,恰於珠部上 方的頸部,較要具有高強度,欲達此目的,必須於該部份 抑制熱效應引發再結晶粒的粗化。 除了合併添加Cu及Ca外,—種或多種pt,pd&In較佳 含於頸部細粒來增強頸部強度。單純添加pt,pd&In無法 汽質抑制頸部的再結晶,但同時與Cu&Ca合併添加可提 仏改良頌強度的協同增效效果。Pt,Pd及In總量須為〇.〇1 Wi°/。或以上以確保獲得前述效果。但pt,pd&ir^|量不可 多於3.0 wt%,以防珠扁平’確保珠的良好球度,因而有 ___ 6.讀先閲讀背面之注意事^再填寫未頁〕 i. 中國國家標準(〇呢)人4規格(210'乂297公釐) -9- 經濟部中央標準局員工消費合作.社印製 —A7 , ~~I ' ------ B7 五、發明説明(7 ) ' — 助於形成縮小節距接綠化& 筏線所需的小珠。過量添加Pt,Pd及h! 也引起珠部硬化,於接绝 士 %摆線過程損傷矽晶片。 "^模帛過程巾’高度Ιέ性熱SI樹脂以高速傾倒於加 ’、、、於150至2CK) C之模具㈣起接線變形 。由於樹脂流引發 接線的變形主要係與線性質有關.,特別線之升溫性質。 甘添加一種或多種Y,La及Ce其總量為0.0003至0.03 wt〇/0 可,供改良的局溫線強度。單獨添加Y,^^及以僅略為改 良至:線強度而與〜及。合併添加乃顯著改良室溫線強 =~所茜Y ’ La&cd‘l'量須為〇_〇〇〇3 wt°/〇或以上俾提供高 /皿線強度之顯著改良,但不可超過㈣3⑽以防珠形成收 縮穴或珠的球度劣化。 實例 經由使用具有純度99"5 wt%或以上之電解金,具有 〒、.且成如表2所示之金合金於溶爐内溶化,淹鑄成禱頂 滚乳及抽線形成具有最終直徑24 的金合金薄線, 然後於空氣巾退火提供具有控制伸長率的線。 y δ金珠仏經由於接線用.高速自動化接線機内於線梢 端藉電孤放電形成,珠可於掃描電子顯微鏡下觀察。本發 月之Λ例1至29之珠觀察得為球形。詳細觀察珠表面顯示 若干珠於珠梢端具有收縮穴。表2中,符號‘‘〇,,表示“ 具有收縮穴”及符?虎“◎’,表示“不含收縮穴’,。 欲研究接線操作可能發生的晶片損傷,接線裝置浸泡 於王水中洛解金合金線及鋁電極,然後於光學顯微鏡觀察 晶片之接點。本發明之第a29圖未出現實質上無法接受 0請先閲讀背面之注意事項再填寫本耳,> -裴 -'II. -泉. 齡縣7^^^ X 297^¥Τ ^ur: A7 —---_______ _ B7 , · 五、發明説明~~ ~ -— 的,知。。表2中,符號“〇’’表示觀察得微裂縫及符號“ ◎”表示未見損傷。 、欲/則定迴路變形後之頸強度,線框及半導體晶片固定 =固持器内,於中部拉扯接線金合金線。由100個樣品之 抗拉強度平均值,亦即斷裂時的抗拉強度估計頸強度。 山S人測疋線彎折,線以接線跨距4.5 mm接合(以線接線 鈿,距表不)且由上方於投射器内以大體垂直方向觀察來 測里由弓形線最外點至穿過接線末端直線晝出的法線長度 。線彎折係由80個樣品的平均值評估。 欲測定樹脂模塑時的線掃拂,附有半導體裝置之線框 且有線以4.5腿跨距接合的線框於模塑裝置使用環氧樹月旨 模塑,樹脂模塑裝置内側使用軟χ_光檢視器觀察投射χ_ 光時的情況,其中以如同對線彎折之相同方式測量弓形線 最外點的掃拂距離,線掃拂係以掃拂距離相對於4·5 _跨 距長度之百分率表不。線掃描係由8〇個樣品的平均值估計 〇 經濟部中央標準局員工消費合作社印製 表2摘述本發明之化學組成於規定範圍之實例結果, 而表3摘述化學組成於規定範圍以外之比較例之結果。 表2中,貫例1至29係有關本發明之第一態樣,實例2 至17及22至29為第二悲、樣,實例丨至口及以至”係關第三 態樣,實例7及m系關第四態樣,實例12至15係關第五態 樣,及實例16至17係關第六態樣。 表j中,比較例C1至C4具有樹脂模塑時之線掃拂高達 6%或以上,表示由於鄰近線間非期望的連接造成瑕疵發 ΓΓΓ 本纸狀度適用中國國( CNS ) ( 210^97^¾ ) 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家榇準(CNS ) Α4規格(210Χ297公釐) A7 ._B7_' — 五、發明説明(9 ) 生機率南,也具有線脊折20 // m或以上表示迴路形狀非 期望的分散。 相反地,根據本發明之第一態樣之實例丨至四具有線 掃拂值縮小為5%或以下。實例2至17及22至29含有。.丨至工〇 wt% Cu及0.001至〇·〇2 wt% Ca具有Cu/Ca重量含量比控制 於40至800之範圍内,其線掃拂值進一步縮小為4%或以下 且具有良好接線性能;比較實例20及21之結果,實例2〇及 21含有Cu及Ca之重量含量比Cu/Ca大於800。 含超過1.0 wt% Cu之比較例C5中,抽線製程需要進行 中間退火三次以防止模具磨耗及抽線過程中由於高抽取抗 性造成線彎折。 比較具有較佳Cu/Ca值之前述實例2至17及22至29, 實例20及21(含Cu及Ca於規定範圍内,但Cu/Ca之重量含 量比大於800)具有略大的線掃拂值約為4.5%,但各種性質 概略改良;它方面,實例18及19含有Cu及Ca於規定範圍 内’但Cu/Ca重量含量比小於40,實例18及19於接線晶片 表面上具有少數微裂缝》 根據本發明之第四態樣含Pt,Pd及In之實例7至11具 有改良抗拉強度為7 gf或以上,其中線必然於恰在頸部上 方部份斷裂,提供頸強度增高。 相反地,含總量小於0.01 wt% Pt,Pd及In之實例22及 23未明顯顯示前述效果;它方面,含總量超過3.0 wt% Pt ,Pd及In之實例24及25顯示接合晶片略為受損,但也獲得 前述效果。 -12- C請先閲讀背面之注意事項再填寫本頁) 裝. -、βτ A7 B7 五、發明説明(10) 根據第五態樣之實例12至15顯示線掃拂被抑制至3 % 或以下。 相反地,含總量小於0.0003 wt% Y,La及Ce之實例26 及27顯示前述效果之程度較低;它方面,含總量多於0.03 wt% Y,La及Ce之實例28及29顯示於珠梢端有個約2-3 em 的小收縮穴。 如前之敘述,本發明提供一種接線時具有縮小線彎曲 及樹脂模塑時縮小線掃拂之金合金薄線,其可優異地應用 於需要縮小接線節距的高密度半導體晶片包裝。 表1 (請先閱讀背面之注意事項再填寫本頁) .裝· 樣品 添加劑 抗拉強度 (gf) 彈性常數 (kgfiW) ⑻ Cu 單獨(0.6wt%) 9·5±0_3 8000±200 (b) Ca 單獨(0.002wt%) 11·8±0.4 7800±200 (c) Ca 單獨(0.00043wt%) 11.4±0_4 7600 ±150 1 Cu+Ca, (a)+(b), Cu/Ca=300 15·8±0_4 9400±100 2 Cu+Ca,(a)+(c),Cu/Ca=1400 13. 9±0.3 8600±200 Au (純度 >99.999%) 6. 2±0.3 6000 ±200Printed by the Consumers' Cooperatives of the Ministry of Economic Affairs of the People's Republic of China A7 _____________B7 1 V. Description of the Invention (6). This is especially true for the Cu / Ca weight content ratio range of ~~~~-. The weight content ratio Cu / Ca is preferably in the range of 4G to _ to provide improved tensile strength and sharpness constant by the combined addition of Cu and Ca. The combined addition of Cu and Ca is still effective outside the aforementioned preferred range, but the weight content ratio greater than lion can only provide a small increase in resistance, and the content ratio of less than 40 can increase the tensile strength but cause the formation of melting lines. The problem that the hardness increases and the underlying silicon wafer is damaged during wiring. The wire strength is proportional to the square of the wire diameter, so as the wire diameter decreases, the wire material strength must be increased to ensure wire sweep resistance. Gold alloy thin wires with a diameter of 25 to 30 Am are currently used, but not suitable for fine pitch. Added according to the invention via merger. And gold with improved strength. Gold thin wires are preferably used for smaller wire diameters of 25 / zm or less. Via combination: The added strength of Cu and C a is particularly good when the wire diameter is 2 3 # m or less, where the wire strength is 25% or more higher than the 25 / zm wire. To reduce the wiring pitch, the wireframe must have fewer internal wires, but swinging during shipping may cause problems. In order to provide anti-swaying properties, the neck just above the bead has higher strength. To achieve this, the coarsening of recrystallized grains caused by thermal effects must be suppressed in this part. In addition to the combined addition of Cu and Ca, one or more of pt, pd & In is preferably contained in the neck fines to enhance the strength of the neck. Simply adding pt, pd & In cannot inhibit the recrystallization of the neck, but combined with Cu & Ca can increase the synergistic effect of improving the strength of the song. The total amount of Pt, Pd and In must be 0.01 W /. Or above to ensure that the aforementioned effect is obtained. However, the amount of pt, pd & ir ^ | cannot be more than 3.0 wt%, to prevent the beads from flattening to ensure the good sphericity of the beads, so there is ___ 6. Read the precautions on the back ^ before filling in the last page] i. National Standard (〇 呢) People 4 Specifications (210 '乂 297 mm) -9- Consumer Co-operation of the Central Standards Bureau of the Ministry of Economic Affairs. Printed by the Society—A7, ~~ I' ------ B7 V. Description of the Invention (7) '— Helps to form the beads needed to narrow the pitch to connect the greening & raft line. Excessive addition of Pt, Pd, and h! Also causes the bead to harden, which damages the silicon wafer during the %% cycloid process. " ^ Molding process towel 'High-strength thermal SI resin is poured at a high speed on a mold which is heated to 150 to 2CK) C to deform the wiring. The deformation of the wiring caused by the resin flow is mainly related to the properties of the wire. In particular, the heating properties of the wire. It is possible to add one or more kinds of Y, La and Ce in a total amount of 0.0003 to 0.03 wt // 0 for improved local temperature line strength. Add Y, ^^, and to slightly improve to: line strength and ~ and. Combined addition is a significant improvement in room temperature line strength = ~ the amount of Y 'La & cd' l 'must be 〇_〇〇〇〇3 wt ° / 〇 or above 俾 to provide a significant improvement in high / dish line strength, but can not exceed ㈣3⑽ To prevent the beads from forming shrinkage holes or the sphericity of the beads to deteriorate. The examples are obtained by using electrolytic gold with a purity of 99 " 5 wt% or more, having 〒,., And forming a gold alloy as shown in Table 2 in a melting furnace, submerged into a prayer roll, and drawn to form a final diameter 24 thin gold alloy wire and then annealed in an air towel to provide a wire with controlled elongation. y δ gold beads are formed by wiring. High-speed automatic wiring machines are formed by electric solitary discharge at the wire ends. The beads can be observed under a scanning electron microscope. The beads of Λ Examples 1 to 29 of this month were observed to be spherical. A detailed observation of the bead surface revealed that several beads had shrinkage holes at the ends of the beads. In Table 2, the symbol "'0" means "with a contraction point" and the symbol "Tiger" "◎" means "without a contraction point". To study the damage to the wafer that may occur during the wiring operation, the wiring device is immersed in a gold alloy wire and aluminum electrode in aqua regia, and then the wafer contacts are observed under an optical microscope. Figure a29 of the present invention does not appear to be substantially unacceptable. 0 Please read the notes on the back before filling in this ear, >-裴 -'II.-泉. Lingxian 7 ^^^ X 297 ^ ¥ Τ ^ ur: A7 —---_______ _ B7, · V. Description of the invention ~~ ~ -—, know. . In Table 2, the symbol “0” indicates that microcracks were observed and the symbol “◎” indicates that no damage was observed. 欲 / The neck strength after the circuit is deformed is fixed, the wire frame and the semiconductor wafer are fixed = in the holder, and the wiring is pulled in the middle Gold alloy wire. The neck strength is estimated from the average of the tensile strength of 100 samples, that is, the tensile strength at the time of breaking. The mountain is measured by bending the wire, and the wire is connected with a wiring span of 4.5 mm (with a wire connection, From the table) and viewed from above in the projector in a generally vertical direction to measure the normal length from the outermost point of the arched line to the straight line passing through the terminal end. The line bending is evaluated by the average of 80 samples To measure the wire sweep during resin molding, the wire frame with the wire frame of the semiconductor device attached and the wire joined with a 4.5-leg span is molded with epoxy resin on the molding device, and the inside of the resin molding device is soft. The χ_light viewer observes when χ_ light is projected, in which the sweep distance of the outermost point of the arched line is measured in the same way as the line is bent, and the line sweep is based on the sweep distance relative to the 4 · 5 _ span The percentage of length is shown. The line scan is from 8 The average value of each sample is estimated. Table 2 summarizes the results of examples of the chemical composition of the present invention in the specified range, and Table 3 summarizes the results of the comparative examples with the chemical composition outside the specified range. In Table 2, Examples 1 to 29 are related to the first aspect of the present invention, and Examples 2 to 17 and 22 to 29 are the second aspect, examples. Examples 丨 to mouth and even "related to the third aspect, Example 7 And m is the fourth aspect, examples 12 to 15 are the fifth aspect, and examples 16 to 17 are the sixth aspect. In Table j, Comparative Examples C1 to C4 have a line sweep of up to 6% or more during resin molding, indicating that flaws occur due to undesired connections between adjacent lines. ΓΓΓ The paper shape is applicable to China (CNS) (210 ^ 97 ^ ¾) Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs This paper is printed in accordance with China National Standards (CNS) A4 specifications (210 × 297 mm) A7 ._B7_ '— V. Description of the invention (9) Probability of South, also has Line ridges of 20 // m or more indicate undesired dispersion of loop shapes. In contrast, examples 1 to 4 according to the first aspect of the present invention have a line sweep value reduced to 5% or less. Examples 2 to 17 and 22 to 29 contain. . 丨 to 〇〇wt% Cu and 0.001 to 〇.02 wt% Ca has a Cu / Ca weight content ratio controlled in the range of 40 to 800, and its line sweep value is further reduced to 4% or less and has good wiring Performance; Results of Comparative Examples 20 and 21, Examples 20 and 21 contained Cu and Ca in a weight content ratio Cu / Ca greater than 800. In Comparative Example C5 containing more than 1.0 wt% Cu, the drawing process required three intermediate annealings to prevent mold abrasion and wire bending due to high drawing resistance during the drawing process. Comparing the foregoing examples 2 to 17 and 22 to 29 with better Cu / Ca values, and examples 20 and 21 (containing Cu and Ca within the specified range, but the weight content ratio of Cu / Ca is greater than 800) have slightly larger line scans The flick value is about 4.5%, but various properties are roughly improved. In terms of it, Examples 18 and 19 contain Cu and Ca within the specified range, but the Cu / Ca weight content ratio is less than 40, and Examples 18 and 19 have a small amount on the surface of the wiring chip. Microcracks> Examples 7 to 11 containing Pt, Pd, and In according to the fourth aspect of the present invention have improved tensile strength of 7 gf or more, where the line must be broken just above the neck to provide increased neck strength . In contrast, Examples 22 and 23 containing a total amount of less than 0.01 wt% Pt, Pd, and In did not clearly show the foregoing effects; in this respect, Examples 24 and 25 containing a total amount of more than 3.0 wt% Pt, Pd, and In showed that the bonded wafers were slightly Damaged, but the aforementioned effects are also obtained. -12- C Please read the precautions on the back before filling this page).-. Βτ A7 B7 V. Description of the invention (10) According to the examples 12 to 15 of the fifth aspect, the line sweep is suppressed to 3% or the following. In contrast, Examples 26 and 27 containing less than 0.0003 wt% Y, La, and Ce showed a lower degree of the aforementioned effect; in this respect, Examples 28 and 29 containing more than 0.03 wt% Y, La, and Ce showed There is a small contraction hole of about 2-3 em at the tip of the bead. As described in the foregoing, the present invention provides a thin gold alloy wire having a reduced wire bend during wiring and a reduced wire sweep during resin molding, which can be excellently applied to high-density semiconductor wafer packages requiring a reduced wiring pitch. Table 1 (Please read the precautions on the back before filling in this page). Installation · Sample additives Tensile strength (gf) Elastic constant (kgfiW) ⑻ Cu alone (0.6wt%) 9 · 5 ± 0_3 8000 ± 200 (b) Ca alone (0.002wt%) 11 · 8 ± 0.4 7800 ± 200 (c) Ca alone (0.00043wt%) 11.4 ± 0_4 7600 ± 150 1 Cu + Ca, (a) + (b), Cu / Ca = 300 15 8 ± 0_4 9400 ± 100 2 Cu + Ca, (a) + (c), Cu / Ca = 1400 13. 9 ± 0.3 8600 ± 200 Au (purity > 99.999%) 6. 2 ± 0.3 6000 ± 200
、1T c 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 五、發明説明( 111T c Printed by the Consumer Cooperatives of the Central Bureau of Standards of the Ministry of Economic Affairs This paper size applies to the Chinese National Standard (CNS) A4 (210X 297 mm) V. Description of the invention (11
r〇 UJr〇 UJ
Η CO Μ σ\ A7B7 Η 0. ’s • 05 .48 15 P02Η CO Μ σ \ A7B7 Η 0. ’s • 05 .48 15 P02
Cu 0.0025 0 .0025 -0025 ’°°25 -0030 .0030 -0030 -oso ’0008 -0°05 .0040 • 0020 -003 .°°3 -0025 .Q025 -0025 .0025 -003 .003Cu 0.0025 0 .0025 -0025 ’°° 25 -0030 .0030 -0030 -oso’ 0008 -0 ° 05 .0040 • 0020 -003. °° 3 -0025 .Q025 -0025 .0025 -003 .003
• CIS .003 -003 -015 -018 • 00^ -003 0 - 001 G.oos• CIS .003 -003 -015 -018 • 00 ^ -003 0-001 G.oos
Ca 2.〇00 0.001 0.001 Q.8 0·3 °.°s 0,015Ca 2.〇00 0.001 0.001 Q. 8 0.3 °. ° s 0,015
Pt: 2.500 2.000 0.8 °.5 0.8 1.5 P02Pt: 2.500 2.000 0.8 °. 5 0.8 1.5 P02
Pd 1.000 P°°Q3 0.05 0.05Pd 1.000 P °° Q3 0.05 0.05
In 0,0200 P0002 0.0050In 0,0200 P0002 0.0050
0 .QOS o.oso 0·0005 P0150 0·0002 0.0050 0.0050 0.00100 .QOS o.oso 0 · 0005 P0150 0 · 0002 0.0050 0.0050 0.0010
LaLa
0.0150 ololl20 I P0Q20 0.0100 0.00500.0150 ololl20 I P0Q20 0.0100 0.0050
Ce 紲 2 *繇 »雜 撇繇 ws «繇 *繇 »雜 撇戤 撇繇 ί 撇繇Ce 绁 2 * 繇 »Miscellaneous skimmers ws« 繇 * 繇 »Miscellaneous skimmers Skimmers ί Skimmers
I ®繇 mm 撇菰 »s mmI ® 繇 mm skimming »s mm
Au 280.0 280 280 so l0101Au 280.0 280 280 so l0101
Is 1000Is 1000
ISO 0 20.0 25 233 233 2S0 2S°ISO 0 20.0 25 233 233 2S0 2S °
2S2S
2S 160 166 166 60 332S 160 166 166 60 33
Moo 150 0 0 0'0', 7Moo 150 0 0 0'0 ', 7
Cu/CaCu / Ca
SB 經濟部中央標準局員工消費合作社印製 15 ·0 U. 15. 15. 15‘ 15. 16· 16. 19· 2°. 10· 10. 1· 15,SB Printed by the Consumer Cooperatives of the Central Standards Bureau of the Ministry of Economic Affairs 15 · 0 U. 15. 15. 15 ‘15. 16 · 16. 19 · 2 °. 10 · 10. 1 · 15,
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S .6 17·0 19.8 -®wl k5) (1}S .6 17 · 0 19.8 -®wl k5) (1)
3 ^ ΐΞ3 y<s 知 i、? 5ίΐϋ 一 S 〔紙張尺度ΪΪ用中國國家標( CNS ) A4規格(210X 297公釐)3 ^ ΐΞ3 y < s 5ίΐϋ 一 S 〔Paper size: Chinese National Standard (CNS) A4 size (210X 297mm)
TT4TTT4T
五、發明説明(12) C6 0-w :2 0.15 o. 01 A7 B7 ί- o · 01V. Description of the invention (12) C6 0-w: 2 0.15 o. 01 A7 B7 ί- o · 01
Cu 0.0300 0.0030 0.00008 0·03 0.G005Cu 0.0300 0.0030 0.00008 0 · 03 0.G005
Ca 2Ca 2
In ίβββ. ^a. 谢3 ssIn ίβββ. ^ A. 谢 3 ss
Ce ί. 00. s·Ce ί. 00. s ·
Au 2^.7 400.0 1S75 0·0 To-'oAu 2 ^ .7 400.0 1S75 0 · 0 To-'o
Cu/Ca S0 經濟部中央標準局員工消費合作社印製Cu / Ca S0 Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs
IP 11, 25, 35. 0S (ΞΙΙ) i.5 H Γδ~ (請先間讀背面之注意事項再填寫本頁)IP 11, 25, 35. 0S (ΞΙΙ) i.5 H Γδ ~ (Please read the precautions on the back before filling this page)
本紙*尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐)The paper * size applies to China National Standard (CNS) A4 (210 X 297 mm)
Claims (1)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP776096A JP3639662B2 (en) | 1996-01-19 | 1996-01-19 | Gold alloy fine wire for semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
TW380303B true TW380303B (en) | 2000-01-21 |
Family
ID=11674653
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW86110146A TW380303B (en) | 1996-01-19 | 1997-07-17 | Gold alloy thin wire for semiconductor devices |
Country Status (2)
Country | Link |
---|---|
JP (1) | JP3639662B2 (en) |
TW (1) | TW380303B (en) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20030096985A (en) * | 2002-06-18 | 2003-12-31 | 헤라우스오리엔탈하이텍 주식회사 | Gold alloy wire for bonding of semiconductor device |
-
1996
- 1996-01-19 JP JP776096A patent/JP3639662B2/en not_active Expired - Lifetime
-
1997
- 1997-07-17 TW TW86110146A patent/TW380303B/en not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
JP3639662B2 (en) | 2005-04-20 |
JPH09198917A (en) | 1997-07-31 |
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