TW380278B - Back sputtering shield - Google Patents
Back sputtering shield Download PDFInfo
- Publication number
- TW380278B TW380278B TW087100022A TW87100022A TW380278B TW 380278 B TW380278 B TW 380278B TW 087100022 A TW087100022 A TW 087100022A TW 87100022 A TW87100022 A TW 87100022A TW 380278 B TW380278 B TW 380278B
- Authority
- TW
- Taiwan
- Prior art keywords
- target
- shield
- patent application
- target assembly
- back plate
- Prior art date
Links
- 238000004544 sputter deposition Methods 0.000 title description 18
- 230000008021 deposition Effects 0.000 claims abstract description 17
- 239000002245 particle Substances 0.000 claims description 41
- 230000002079 cooperative effect Effects 0.000 claims description 7
- 239000012212 insulator Substances 0.000 claims 5
- 102100030716 Ankyrin repeat and SOCS box protein 8 Human genes 0.000 claims 1
- 101000703115 Homo sapiens Ankyrin repeat and SOCS box protein 8 Proteins 0.000 claims 1
- 238000004140 cleaning Methods 0.000 abstract description 8
- 229910052751 metal Inorganic materials 0.000 abstract description 8
- 239000002184 metal Substances 0.000 abstract description 8
- 239000000758 substrate Substances 0.000 description 28
- 239000000463 material Substances 0.000 description 24
- 238000000034 method Methods 0.000 description 22
- 238000012545 processing Methods 0.000 description 14
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 12
- 238000000151 deposition Methods 0.000 description 12
- 239000007789 gas Substances 0.000 description 12
- 230000008569 process Effects 0.000 description 8
- 229910052786 argon Inorganic materials 0.000 description 7
- 239000013077 target material Substances 0.000 description 7
- 230000007246 mechanism Effects 0.000 description 6
- 238000005240 physical vapour deposition Methods 0.000 description 5
- 238000005137 deposition process Methods 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 238000013459 approach Methods 0.000 description 3
- -1 argon ions Chemical class 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 238000005477 sputtering target Methods 0.000 description 3
- 229910001220 stainless steel Inorganic materials 0.000 description 3
- 239000010935 stainless steel Substances 0.000 description 3
- 239000010936 titanium Substances 0.000 description 3
- 229910052719 titanium Inorganic materials 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 239000006227 byproduct Substances 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 230000006872 improvement Effects 0.000 description 2
- 239000000047 product Substances 0.000 description 2
- 101100008049 Caenorhabditis elegans cut-5 gene Proteins 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005684 electric field Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000002923 metal particle Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000011343 solid material Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- H01L21/205—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3435—Target holders (includes backing plates and endblocks)
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US08/780,752 US6045670A (en) | 1997-01-08 | 1997-01-08 | Back sputtering shield |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW380278B true TW380278B (en) | 2000-01-21 |
Family
ID=25120576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087100022A TW380278B (en) | 1997-01-08 | 1998-01-02 | Back sputtering shield |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US6045670A (de) |
| EP (1) | EP0853331A3 (de) |
| JP (1) | JPH10237638A (de) |
| KR (1) | KR19980070371A (de) |
| TW (1) | TW380278B (de) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI489913B (zh) * | 2007-11-29 | 2015-06-21 | 應用材料股份有限公司 | 沉積導電黏貼材料之設備與方法 |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002090977A (ja) * | 2000-09-12 | 2002-03-27 | Hoya Corp | 位相シフトマスクブランク、フォトマスクブランク、並びにそれらの製造装置及び製造方法 |
| US20020162741A1 (en) * | 2001-05-01 | 2002-11-07 | Applied Materials, Inc. | Multi-material target backing plate |
| DE10122070B4 (de) * | 2001-05-07 | 2005-07-07 | Texas Instruments Deutschland Gmbh | Kathodenzerstäubungskammer zum Aufbringen von Material auf der Oberfläche einer in der Kammer befindlichen Halbleiterscheibe |
| JP5051954B2 (ja) * | 2001-09-17 | 2012-10-17 | エルエスアイ コーポレーション | スパツタリング方法及び該方法に使用するスパツタリングターゲット用カバー |
| US6730174B2 (en) | 2002-03-06 | 2004-05-04 | Applied Materials, Inc. | Unitary removable shield assembly |
| EP1511876B1 (de) * | 2002-05-14 | 2009-04-29 | Tokyo Electron Limited | Adapter für zerstäubungskathode |
| TWI269815B (en) * | 2002-05-20 | 2007-01-01 | Tosoh Smd Inc | Replaceable target sidewall insert with texturing |
| US6780294B1 (en) | 2002-08-19 | 2004-08-24 | Set, Tosoh | Shield assembly for substrate processing chamber |
| KR20060123504A (ko) * | 2004-02-03 | 2006-12-01 | 허니웰 인터내셔널 인코포레이티드 | 물리증착 표적 구조체 |
| US20070158187A1 (en) * | 2006-01-12 | 2007-07-12 | Wagner Andrew V | Cathode for a vacuum sputtering system |
| US20120043198A1 (en) * | 2010-08-18 | 2012-02-23 | Semiconductor Energy Laboratory Co., Ltd. | Film formation apparatus and film formation method |
| US8968537B2 (en) * | 2011-02-09 | 2015-03-03 | Applied Materials, Inc. | PVD sputtering target with a protected backing plate |
| GB201102447D0 (en) | 2011-02-11 | 2011-03-30 | Spp Process Technology Systems Uk Ltd | Composite shielding |
| EP2487275B1 (de) * | 2011-02-11 | 2016-06-15 | SPTS Technologies Limited | Verbundstoffabschirmung |
| US9252002B2 (en) | 2012-07-17 | 2016-02-02 | Applied Materials, Inc. | Two piece shutter disk assembly for a substrate process chamber |
| US9960021B2 (en) * | 2013-12-18 | 2018-05-01 | Applied Materials, Inc. | Physical vapor deposition (PVD) target having low friction pads |
| KR102699890B1 (ko) * | 2018-04-18 | 2024-08-29 | 어플라이드 머티어리얼스, 인코포레이티드 | 자기-중심조정 피쳐를 갖는 2-피스 셔터 디스크 조립체 |
| CN112088227B (zh) | 2018-05-12 | 2022-09-30 | 应用材料公司 | 具有整合遮件库的预清洁腔室 |
Family Cites Families (25)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4472259A (en) * | 1981-10-29 | 1984-09-18 | Materials Research Corporation | Focusing magnetron sputtering apparatus |
| US4525262A (en) * | 1982-01-26 | 1985-06-25 | Materials Research Corporation | Magnetron reactive bias sputtering method and apparatus |
| US4569745A (en) * | 1982-10-05 | 1986-02-11 | Fujitsu Limited | Sputtering apparatus |
| US4428816A (en) * | 1983-05-25 | 1984-01-31 | Materials Research Corporation | Focusing magnetron sputtering apparatus |
| DE3527626A1 (de) * | 1985-08-01 | 1987-02-05 | Leybold Heraeus Gmbh & Co Kg | Zerstaeubungskatode nach dem magnetronprinzip |
| JPS63162861A (ja) * | 1986-12-25 | 1988-07-06 | Toshiba Corp | 薄膜堆積装置 |
| JPS63192863A (ja) * | 1987-02-06 | 1988-08-10 | Shinku Zairyo Kk | モザイク式タ−ゲツト装置 |
| JPH01152271A (ja) * | 1987-12-09 | 1989-06-14 | Toshiba Corp | スパッタ装置 |
| JPH01208459A (ja) * | 1988-02-15 | 1989-08-22 | Hitachi Ltd | スパツタリング装置のターゲツト電極装置 |
| JPH01290765A (ja) * | 1988-05-16 | 1989-11-22 | Toshiba Corp | スパッタリングターゲット |
| JPH0219461A (ja) * | 1988-07-07 | 1990-01-23 | Matsushita Electric Ind Co Ltd | スパッタ装置 |
| JPH02285067A (ja) * | 1989-04-27 | 1990-11-22 | Toshiba Corp | 真空薄膜形成装置 |
| EP0439360A3 (en) * | 1990-01-26 | 1992-01-15 | Varian Associates, Inc. | Rotating sputtering apparatus for selected erosion |
| US5635036A (en) * | 1990-01-26 | 1997-06-03 | Varian Associates, Inc. | Collimated deposition apparatus and method |
| US5391275A (en) * | 1990-03-02 | 1995-02-21 | Applied Materials, Inc. | Method for preparing a shield to reduce particles in a physical vapor deposition chamber |
| JPH07109030B2 (ja) * | 1991-02-12 | 1995-11-22 | アプライド マテリアルズ インコーポレイテッド | 半導体ウェーハ上にアルミニウム層をスパッタする方法 |
| JPH04285161A (ja) * | 1991-03-14 | 1992-10-09 | Fujitsu Ltd | スパッタ装置 |
| JPH0593268A (ja) * | 1991-10-01 | 1993-04-16 | Hitachi Ltd | スパツタリングカソード及びそれを用いたスパツタリング装置 |
| DE4201551C2 (de) * | 1992-01-22 | 1996-04-25 | Leybold Ag | Zerstäubungskathode |
| US5271817A (en) * | 1992-03-19 | 1993-12-21 | Vlsi Technology, Inc. | Design for sputter targets to reduce defects in refractory metal films |
| US5328582A (en) * | 1992-12-04 | 1994-07-12 | Honeywell Inc. | Off-axis magnetron sputter deposition of mirrors |
| DE69403386T2 (de) * | 1993-05-19 | 1997-09-18 | Applied Materials Inc | Vorrichtung und Verfahren zur Erhöhung der Zerstäubungsrate in einem Zerstäubungsgerät |
| US5540821A (en) * | 1993-07-16 | 1996-07-30 | Applied Materials, Inc. | Method and apparatus for adjustment of spacing between wafer and PVD target during semiconductor processing |
| JPH0853757A (ja) * | 1994-08-10 | 1996-02-27 | Fujitsu Ltd | スパッタ用ターゲットの製造方法、スパッタ方法、及び、スパッタ装置 |
| US5632873A (en) * | 1995-05-22 | 1997-05-27 | Stevens; Joseph J. | Two piece anti-stick clamp ring |
-
1997
- 1997-01-08 US US08/780,752 patent/US6045670A/en not_active Expired - Fee Related
-
1998
- 1998-01-02 TW TW087100022A patent/TW380278B/zh not_active IP Right Cessation
- 1998-01-07 EP EP98100114A patent/EP0853331A3/de not_active Withdrawn
- 1998-01-07 KR KR1019980000167A patent/KR19980070371A/ko not_active Application Discontinuation
- 1998-01-08 JP JP10033508A patent/JPH10237638A/ja not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI489913B (zh) * | 2007-11-29 | 2015-06-21 | 應用材料股份有限公司 | 沉積導電黏貼材料之設備與方法 |
| US9224582B2 (en) | 2007-11-29 | 2015-12-29 | Applied Materials, Inc. | Apparatus and method for depositing electrically conductive pasting material |
| US9666416B2 (en) | 2007-11-29 | 2017-05-30 | Applied Materials, Inc. | Apparatus and method for depositing electronically conductive pasting material |
Also Published As
| Publication number | Publication date |
|---|---|
| US6045670A (en) | 2000-04-04 |
| JPH10237638A (ja) | 1998-09-08 |
| EP0853331A3 (de) | 2000-10-11 |
| KR19980070371A (ko) | 1998-10-26 |
| EP0853331A2 (de) | 1998-07-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GD4A | Issue of patent certificate for granted invention patent | ||
| MM4A | Annulment or lapse of patent due to non-payment of fees |