TW376352B - Wafer polishing apparatus having measurement device and polishing method thereby - Google Patents

Wafer polishing apparatus having measurement device and polishing method thereby

Info

Publication number
TW376352B
TW376352B TW087104194A TW87104194A TW376352B TW 376352 B TW376352 B TW 376352B TW 087104194 A TW087104194 A TW 087104194A TW 87104194 A TW87104194 A TW 87104194A TW 376352 B TW376352 B TW 376352B
Authority
TW
Taiwan
Prior art keywords
wafers
polished
measurement device
polishing
unloading
Prior art date
Application number
TW087104194A
Other languages
English (en)
Inventor
Sang-Seon Lee
Jeong-Kon Kim
Original Assignee
Samsung Electronics Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Electronics Co Ltd filed Critical Samsung Electronics Co Ltd
Application granted granted Critical
Publication of TW376352B publication Critical patent/TW376352B/zh

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B24GRINDING; POLISHING
    • B24BMACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00Lapping machines or devices; Accessories
    • B24B37/34Accessories
    • B24B37/345Feeding, loading or unloading work specially adapted to lapping
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW087104194A 1997-07-10 1998-03-20 Wafer polishing apparatus having measurement device and polishing method thereby TW376352B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019970032127A KR100253085B1 (ko) 1997-07-10 1997-07-10 측정장치를구비한웨이퍼폴리싱장치및폴리싱방법

Publications (1)

Publication Number Publication Date
TW376352B true TW376352B (en) 1999-12-11

Family

ID=19514108

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087104194A TW376352B (en) 1997-07-10 1998-03-20 Wafer polishing apparatus having measurement device and polishing method thereby

Country Status (4)

Country Link
US (1) US6149507A (zh)
JP (1) JP3615932B2 (zh)
KR (1) KR100253085B1 (zh)
TW (1) TW376352B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689373B (zh) * 2014-01-23 2020-04-01 日商荏原製作所股份有限公司 研磨方法及研磨裝置

Families Citing this family (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2001064391A2 (en) * 2000-02-29 2001-09-07 Applied Materials, Inc. Planarization system with a wafer transfer corridor and multiple polishing modules
US20010024877A1 (en) * 2000-03-17 2001-09-27 Krishna Vepa Cluster tool systems and methods for processing wafers
JP3510177B2 (ja) * 2000-03-23 2004-03-22 株式会社東京精密 ウェハ研磨装置
KR100386449B1 (ko) * 2000-11-10 2003-06-02 주식회사 하이닉스반도체 웨이퍼의 표면 측정을 위한 방법
US6672943B2 (en) 2001-01-26 2004-01-06 Wafer Solutions, Inc. Eccentric abrasive wheel for wafer processing
US6632012B2 (en) 2001-03-30 2003-10-14 Wafer Solutions, Inc. Mixing manifold for multiple inlet chemistry fluids
US6949158B2 (en) * 2001-05-14 2005-09-27 Micron Technology, Inc. Using backgrind wafer tape to enable wafer mounting of bumped wafers
JP2002343756A (ja) * 2001-05-21 2002-11-29 Tokyo Seimitsu Co Ltd ウェーハ平面加工装置
KR100470230B1 (ko) * 2002-02-08 2005-02-05 두산디앤디 주식회사 화학기계적 연마장치
DE102005000645B4 (de) * 2004-01-12 2010-08-05 Samsung Electronics Co., Ltd., Suwon Vorrichtung und ein Verfahren zum Behandeln von Substraten
TWI280177B (en) * 2004-02-02 2007-05-01 Powerchip Semiconductor Corp Dummy process of chemical mechanical polishing process and polishing pad conditioning method
CN100363152C (zh) * 2004-03-23 2008-01-23 力晶半导体股份有限公司 化学机械研磨制作工艺的假制作工艺与研磨垫调节方法
JP6486757B2 (ja) * 2015-04-23 2019-03-20 株式会社荏原製作所 基板処理装置
JP6465015B2 (ja) * 2015-12-18 2019-02-06 株式会社Sumco 半導体ウェーハの厚み分布測定システムおよび半導体ウェーハ研磨システム、半導体ウェーハの厚み分布測定方法および半導体ウェーハの厚み取り代分布測定方法、ならびに半導体ウェーハの研磨方法
CN114833716B (zh) * 2022-05-20 2023-07-14 北京晶亦精微科技股份有限公司 化学机械研磨设备及研磨方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5498199A (en) * 1992-06-15 1996-03-12 Speedfam Corporation Wafer polishing method and apparatus
US5658183A (en) * 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5649854A (en) * 1994-05-04 1997-07-22 Gill, Jr.; Gerald L. Polishing apparatus with indexing wafer processing stations
US5655954A (en) * 1994-11-29 1997-08-12 Toshiba Kikai Kabushiki Kaisha Polishing apparatus
DE19544328B4 (de) * 1994-11-29 2014-03-20 Ebara Corp. Poliervorrichtung
US5904611A (en) * 1996-05-10 1999-05-18 Canon Kabushiki Kaisha Precision polishing apparatus
US6012966A (en) * 1996-05-10 2000-01-11 Canon Kabushiki Kaisha Precision polishing apparatus with detecting means
US5679055A (en) * 1996-05-31 1997-10-21 Memc Electronic Materials, Inc. Automated wafer lapping system
US5865901A (en) * 1997-12-29 1999-02-02 Siemens Aktiengesellschaft Wafer surface cleaning apparatus and method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI689373B (zh) * 2014-01-23 2020-04-01 日商荏原製作所股份有限公司 研磨方法及研磨裝置

Also Published As

Publication number Publication date
KR19990009659A (ko) 1999-02-05
KR100253085B1 (ko) 2000-04-15
JPH1140537A (ja) 1999-02-12
US6149507A (en) 2000-11-21
JP3615932B2 (ja) 2005-02-02

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Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees