TW374176B - Input/output circuit of high-speed semiconductor memory device requiring less time for testing - Google Patents
Input/output circuit of high-speed semiconductor memory device requiring less time for testingInfo
- Publication number
- TW374176B TW374176B TW087103950A TW87103950A TW374176B TW 374176 B TW374176 B TW 374176B TW 087103950 A TW087103950 A TW 087103950A TW 87103950 A TW87103950 A TW 87103950A TW 374176 B TW374176 B TW 374176B
- Authority
- TW
- Taiwan
- Prior art keywords
- input
- memory device
- semiconductor memory
- testing
- output circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
- G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
- G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
- G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths
Landscapes
- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Dram (AREA)
- Tests Of Electronic Circuits (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Static Random-Access Memory (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019970060815A KR100275724B1 (ko) | 1997-11-18 | 1997-11-18 | 테스트 타임이 감소되는 고속 반도체 메모리 장치의 입출력 회로 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW374176B true TW374176B (en) | 1999-11-11 |
Family
ID=19524981
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087103950A TW374176B (en) | 1997-11-18 | 1998-03-17 | Input/output circuit of high-speed semiconductor memory device requiring less time for testing |
Country Status (4)
Country | Link |
---|---|
US (1) | US5986953A (zh) |
JP (1) | JP3735699B2 (zh) |
KR (1) | KR100275724B1 (zh) |
TW (1) | TW374176B (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6141245A (en) * | 1999-04-30 | 2000-10-31 | International Business Machines Corporation | Impedance control using fuses |
JP2001195899A (ja) | 2000-01-06 | 2001-07-19 | Mitsubishi Electric Corp | 半導体記憶装置 |
US6587384B2 (en) * | 2001-04-21 | 2003-07-01 | Hewlett-Packard Development Company, L.P. | Multi-function serial I/O circuit |
US7609725B2 (en) * | 2003-02-28 | 2009-10-27 | Lsi Corporation | Large transmissions on packetized data bus |
KR100735527B1 (ko) * | 2006-02-13 | 2007-07-04 | 삼성전자주식회사 | 2개의 패드 행을 포함하는 반도체 메모리 장치 |
KR20180038339A (ko) * | 2016-10-06 | 2018-04-16 | 에스케이하이닉스 주식회사 | 셀어레이 불량 테스트 방법 및 이를 수행하는 반도체장치 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5659514A (en) * | 1991-06-12 | 1997-08-19 | Hazani; Emanuel | Memory cell and current mirror circuit |
JPH04212799A (ja) * | 1990-01-31 | 1992-08-04 | Nec Ic Microcomput Syst Ltd | テスト回路内蔵半導体メモリ |
JPH05249196A (ja) * | 1992-03-02 | 1993-09-28 | Hitachi Ltd | 半導体記憶装置 |
US5379308A (en) * | 1992-04-20 | 1995-01-03 | Intel Corporation | Apparatus for a bus-based integrated circuit test architecture |
JP3563750B2 (ja) * | 1992-10-16 | 2004-09-08 | テキサス インスツルメンツ インコーポレイテツド | アナログ回路のための走査に基づく試験 |
JP3753190B2 (ja) * | 1995-04-26 | 2006-03-08 | 三菱電機株式会社 | 半導体装置 |
US5506499A (en) * | 1995-06-05 | 1996-04-09 | Neomagic Corp. | Multiple probing of an auxilary test pad which allows for reliable bonding to a primary bonding pad |
US5592422A (en) * | 1995-06-07 | 1997-01-07 | Sgs-Thomson Microelectronics, Inc. | Reduced pin count stress test circuit for integrated memory devices and method therefor |
US5568437A (en) * | 1995-06-20 | 1996-10-22 | Vlsi Technology, Inc. | Built-in self test for integrated circuits having read/write memory |
US5615159A (en) * | 1995-11-28 | 1997-03-25 | Micron Quantum Devices, Inc. | Memory system with non-volatile data storage unit and method of initializing same |
-
1997
- 1997-11-18 KR KR1019970060815A patent/KR100275724B1/ko not_active IP Right Cessation
-
1998
- 1998-03-17 TW TW087103950A patent/TW374176B/zh not_active IP Right Cessation
- 1998-05-06 US US09/073,621 patent/US5986953A/en not_active Expired - Lifetime
- 1998-07-29 JP JP21456798A patent/JP3735699B2/ja not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
KR100275724B1 (ko) | 2000-12-15 |
KR19990040441A (ko) | 1999-06-05 |
JP3735699B2 (ja) | 2006-01-18 |
US5986953A (en) | 1999-11-16 |
JPH11162200A (ja) | 1999-06-18 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |