TW373247B - Contact face having uplift and delay S/D and stock silicon gate electrode P type gold oxygen semi-field effect transistor forming method - Google Patents

Contact face having uplift and delay S/D and stock silicon gate electrode P type gold oxygen semi-field effect transistor forming method

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Publication number
TW373247B
TW373247B TW087105033A TW87105033A TW373247B TW 373247 B TW373247 B TW 373247B TW 087105033 A TW087105033 A TW 087105033A TW 87105033 A TW87105033 A TW 87105033A TW 373247 B TW373247 B TW 373247B
Authority
TW
Taiwan
Prior art keywords
layer
gate electrode
bottom material
crystal silicon
delay
Prior art date
Application number
TW087105033A
Other languages
English (en)
Inventor
Shye-Lin Wu
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW087105033A priority Critical patent/TW373247B/zh
Application granted granted Critical
Publication of TW373247B publication Critical patent/TW373247B/zh

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
TW087105033A 1998-04-02 1998-04-02 Contact face having uplift and delay S/D and stock silicon gate electrode P type gold oxygen semi-field effect transistor forming method TW373247B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087105033A TW373247B (en) 1998-04-02 1998-04-02 Contact face having uplift and delay S/D and stock silicon gate electrode P type gold oxygen semi-field effect transistor forming method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087105033A TW373247B (en) 1998-04-02 1998-04-02 Contact face having uplift and delay S/D and stock silicon gate electrode P type gold oxygen semi-field effect transistor forming method

Publications (1)

Publication Number Publication Date
TW373247B true TW373247B (en) 1999-11-01

Family

ID=57941693

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087105033A TW373247B (en) 1998-04-02 1998-04-02 Contact face having uplift and delay S/D and stock silicon gate electrode P type gold oxygen semi-field effect transistor forming method

Country Status (1)

Country Link
TW (1) TW373247B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496353B2 (en) 2003-09-09 2016-11-15 The Regents Of The University Of California Fabrication of single or multiple gate field plates

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496353B2 (en) 2003-09-09 2016-11-15 The Regents Of The University Of California Fabrication of single or multiple gate field plates
US10109713B2 (en) 2003-09-09 2018-10-23 The Regents Of The University Of California Fabrication of single or multiple gate field plates

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