TW375808B - Process for fabricating copper metal interconnection - Google Patents
Process for fabricating copper metal interconnectionInfo
- Publication number
- TW375808B TW375808B TW087104325A TW87104325A TW375808B TW 375808 B TW375808 B TW 375808B TW 087104325 A TW087104325 A TW 087104325A TW 87104325 A TW87104325 A TW 87104325A TW 375808 B TW375808 B TW 375808B
- Authority
- TW
- Taiwan
- Prior art keywords
- copper
- germanium
- layer
- titanium nitride
- metal interconnection
- Prior art date
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Abstract
A process for fabricating copper interconnection comprising the steps of first providing a dielectric for copper interconnection having a plurality of openings on its surface as via contact; coating the dielectric with a layer of titanium nitride and a layer of copper onto the surface of titanium nitride; implanting the germanium onto the contact surface of titanium nitride layer and copper layer by ion implant to form a layer of copper germanium by the reaction of copper and germanium; the titanium nitride acts as diffusion barrier for copper metal interconnection; the copper germanium works as the adhesion layer for the copper metal interconnection; in addition, germanium can be implanted vertically or tiltedly at an angle by ion implant method onto contact surface of titanium nitride and copper metal interconnection. As such, germanium can stay away from contact window and bottom of opening during ion implant that tends to cause damage to circuit elements.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087104325A TW375808B (en) | 1998-03-23 | 1998-03-23 | Process for fabricating copper metal interconnection |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW087104325A TW375808B (en) | 1998-03-23 | 1998-03-23 | Process for fabricating copper metal interconnection |
Publications (1)
Publication Number | Publication Date |
---|---|
TW375808B true TW375808B (en) | 1999-12-01 |
Family
ID=57941945
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW087104325A TW375808B (en) | 1998-03-23 | 1998-03-23 | Process for fabricating copper metal interconnection |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW375808B (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI825439B (en) * | 2021-03-10 | 2023-12-11 | 台灣積體電路製造股份有限公司 | Manufacturing method of semiconductor device |
-
1998
- 1998-03-23 TW TW087104325A patent/TW375808B/en not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI825439B (en) * | 2021-03-10 | 2023-12-11 | 台灣積體電路製造股份有限公司 | Manufacturing method of semiconductor device |
US11855153B2 (en) | 2021-03-10 | 2023-12-26 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device and method |
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MK4A | Expiration of patent term of an invention patent |