TW375808B - Process for fabricating copper metal interconnection - Google Patents

Process for fabricating copper metal interconnection

Info

Publication number
TW375808B
TW375808B TW087104325A TW87104325A TW375808B TW 375808 B TW375808 B TW 375808B TW 087104325 A TW087104325 A TW 087104325A TW 87104325 A TW87104325 A TW 87104325A TW 375808 B TW375808 B TW 375808B
Authority
TW
Taiwan
Prior art keywords
copper
germanium
layer
titanium nitride
metal interconnection
Prior art date
Application number
TW087104325A
Other languages
Chinese (zh)
Inventor
Chung-Shi Liu
Chen-Hua Yu
Jane-Bai Lai
Lin-Juann Chen
Original Assignee
Taiwan Semiconductor Mfg Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taiwan Semiconductor Mfg Co Ltd filed Critical Taiwan Semiconductor Mfg Co Ltd
Priority to TW087104325A priority Critical patent/TW375808B/en
Application granted granted Critical
Publication of TW375808B publication Critical patent/TW375808B/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A process for fabricating copper interconnection comprising the steps of first providing a dielectric for copper interconnection having a plurality of openings on its surface as via contact; coating the dielectric with a layer of titanium nitride and a layer of copper onto the surface of titanium nitride; implanting the germanium onto the contact surface of titanium nitride layer and copper layer by ion implant to form a layer of copper germanium by the reaction of copper and germanium; the titanium nitride acts as diffusion barrier for copper metal interconnection; the copper germanium works as the adhesion layer for the copper metal interconnection; in addition, germanium can be implanted vertically or tiltedly at an angle by ion implant method onto contact surface of titanium nitride and copper metal interconnection. As such, germanium can stay away from contact window and bottom of opening during ion implant that tends to cause damage to circuit elements.
TW087104325A 1998-03-23 1998-03-23 Process for fabricating copper metal interconnection TW375808B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW087104325A TW375808B (en) 1998-03-23 1998-03-23 Process for fabricating copper metal interconnection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW087104325A TW375808B (en) 1998-03-23 1998-03-23 Process for fabricating copper metal interconnection

Publications (1)

Publication Number Publication Date
TW375808B true TW375808B (en) 1999-12-01

Family

ID=57941945

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087104325A TW375808B (en) 1998-03-23 1998-03-23 Process for fabricating copper metal interconnection

Country Status (1)

Country Link
TW (1) TW375808B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI825439B (en) * 2021-03-10 2023-12-11 台灣積體電路製造股份有限公司 Manufacturing method of semiconductor device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI825439B (en) * 2021-03-10 2023-12-11 台灣積體電路製造股份有限公司 Manufacturing method of semiconductor device
US11855153B2 (en) 2021-03-10 2023-12-26 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor device and method

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