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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Abstract
A manufacturing method for local interconnect includes the following steps: forming a word line on the semiconductor substrate with an active region and an isolation structure in which at least a part of the word line can cross the isolation structure; next, forming a spacer on the sidewall of the word line; then, fully forming a metal layer on the substrate and covering the word line and the active region; forming a barrier on the metal layer; then, conducting the first annealing process for forming a metal silicide on the active region and word line surface; forming an oxide on the barrier; defining the oxide to reserve a selected region of the oxide and removing the portion of oxide outside the selected region to expose the barrier; then, removing the barrier and metal layer outside the selected region; and, conducting the second annealing process.
TW88112984A1999-07-301999-07-30Manufacturing method for local interconnect
TW428297B
(en)