TW372367B - Lateral PN digital x-ray image pixelated sensor - Google Patents
Lateral PN digital x-ray image pixelated sensorInfo
- Publication number
- TW372367B TW372367B TW087108562A TW87108562A TW372367B TW 372367 B TW372367 B TW 372367B TW 087108562 A TW087108562 A TW 087108562A TW 87108562 A TW87108562 A TW 87108562A TW 372367 B TW372367 B TW 372367B
- Authority
- TW
- Taiwan
- Prior art keywords
- junctions
- wafer
- digital
- ray
- ray image
- Prior art date
Links
Landscapes
- Measurement Of Radiation (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
A kind of X-ray image pixelated sensor and the manufacturing method thereof. The column is defined by a set of PN junctions in the silicon wafer in which the PN junctions are totally extended on two surfaces of wafer. The PN junctions are formed by neutron transmutation doping which is applied in the P-type silicon with a mask so as to form a N-type column in a wide P-type material. By allocating the bias electrodes, it forms a space charge area which has smaller volume on the top for the entry of X-ray and larger volume at the bottom. In this way, the secondary electrons can be accumulated at the lower space charge area when X-ray passes the wafer. Most of the secondary electrons will pass a charge read-out circuit and convert to image display by digital method.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087108562A TW372367B (en) | 1998-06-02 | 1998-06-02 | Lateral PN digital x-ray image pixelated sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW087108562A TW372367B (en) | 1998-06-02 | 1998-06-02 | Lateral PN digital x-ray image pixelated sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW372367B true TW372367B (en) | 1999-10-21 |
Family
ID=57941642
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW087108562A TW372367B (en) | 1998-06-02 | 1998-06-02 | Lateral PN digital x-ray image pixelated sensor |
Country Status (1)
| Country | Link |
|---|---|
| TW (1) | TW372367B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI734035B (en) * | 2017-09-29 | 2021-07-21 | 荷蘭商Ａｓｍｌ荷蘭公司 | Semiconductor substrate, charged particle beam apparatus, and method for determining a charged particle signal |
-
1998
- 1998-06-02 TW TW087108562A patent/TW372367B/en not_active IP Right Cessation
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI734035B (en) * | 2017-09-29 | 2021-07-21 | 荷蘭商Ａｓｍｌ荷蘭公司 | Semiconductor substrate, charged particle beam apparatus, and method for determining a charged particle signal |
| US11222766B2 (en) | 2017-09-29 | 2022-01-11 | Asml Netherlands B.V. | Multi-cell detector for charged particles |
| US11784024B2 (en) | 2017-09-29 | 2023-10-10 | Asml Netherlands B.V. | Multi-cell detector for charged particles |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| MM4A | Annulment or lapse of patent due to non-payment of fees |