TW370569B - Method for depositing golden titanium nitride - Google Patents

Method for depositing golden titanium nitride

Info

Publication number
TW370569B
TW370569B TW087102665A TW87102665A TW370569B TW 370569 B TW370569 B TW 370569B TW 087102665 A TW087102665 A TW 087102665A TW 87102665 A TW87102665 A TW 87102665A TW 370569 B TW370569 B TW 370569B
Authority
TW
Taiwan
Prior art keywords
titanium nitride
reaction chamber
nitrogen gas
golden titanium
flow rate
Prior art date
Application number
TW087102665A
Other languages
English (en)
Inventor
Kenny King-Tai Ngan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW370569B publication Critical patent/TW370569B/zh

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0015—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterized by the colour of the layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/0021—Reactive sputtering or evaporation
    • C23C14/0036—Reactive sputtering
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/0641—Nitrides

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
TW087102665A 1997-02-26 1998-06-22 Method for depositing golden titanium nitride TW370569B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/805,181 US5919342A (en) 1997-02-26 1997-02-26 Method for depositing golden titanium nitride

Publications (1)

Publication Number Publication Date
TW370569B true TW370569B (en) 1999-09-21

Family

ID=25190867

Family Applications (1)

Application Number Title Priority Date Filing Date
TW087102665A TW370569B (en) 1997-02-26 1998-06-22 Method for depositing golden titanium nitride

Country Status (6)

Country Link
US (1) US5919342A (zh)
EP (1) EP0861920A1 (zh)
JP (1) JPH10298748A (zh)
KR (1) KR19980071720A (zh)
SG (1) SG63815A1 (zh)
TW (1) TW370569B (zh)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6627056B2 (en) 2000-02-16 2003-09-30 Applied Materials, Inc. Method and apparatus for ionized plasma deposition
US6463873B1 (en) * 2000-04-04 2002-10-15 Plasma Quest Limited High density plasmas
US7678705B2 (en) * 2001-07-05 2010-03-16 Tegal Corporation Plasma semiconductor processing system and method
CN100560787C (zh) * 2002-02-27 2009-11-18 亨利J·拉莫斯 在磁化的片等离子体源中在金属衬底上形成氮化钛薄膜
TWI295729B (en) * 2005-11-01 2008-04-11 Univ Nat Yunlin Sci & Tech Preparation of a ph sensor, the prepared ph sensor, systems comprising the same, and measurement using the systems
US8888965B2 (en) * 2007-11-30 2014-11-18 Anna University—Chennai Non-stoichiometric titanium nitride films
KR102069192B1 (ko) * 2013-02-08 2020-01-23 삼성디스플레이 주식회사 나노 결정 형성 방법 및 나노 결정의 형성된 박막을 포함한 유기 발광 표시 장치의 제조 방법
JP7318565B2 (ja) * 2020-03-03 2023-08-01 信越化学工業株式会社 反射型マスクブランクの製造方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1954366C2 (de) * 1969-10-29 1972-02-03 Heraeus Gmbh W C Verfahren und Vorrichtung zur Herstellung von harten UEberzuegen aus Titan- und/oder Tantalverbindungen
JPS58153776A (ja) * 1982-03-05 1983-09-12 Citizen Watch Co Ltd 装飾部品の製造方法およびそれに用いるイオンプレ−テイング装置
JPS61190070A (ja) * 1985-02-20 1986-08-23 Hitachi Ltd スパツタ装置
JPS63152463A (ja) * 1986-12-13 1988-06-24 豊田合成株式会社 顕色繊維物
DE69102851T2 (de) * 1990-10-09 1995-02-16 Nec Corp Verfahren zur Herstellung eines Ti/TiN/Al Kontaktes unter Benutzung eines reaktiven Zerstäubungsprozesses.

Also Published As

Publication number Publication date
SG63815A1 (en) 1999-03-30
KR19980071720A (ko) 1998-10-26
US5919342A (en) 1999-07-06
JPH10298748A (ja) 1998-11-10
EP0861920A1 (en) 1998-09-02

Similar Documents

Publication Publication Date Title
PL307478A1 (en) Improved method of and apparatus for achieving high reaction rate
TW357199B (en) Process for plasma enhanced anneal of titanium nitride
AU6803900A (en) Method and apparatus for providing uniform gas delivery to substrates in cvd and pecvd processes
WO2003067635A3 (en) Reactor assembly and processing method
ES8707311A1 (es) Procedimiento para revestir sustratos en una camara de vacio
TW363086B (en) A CVD apparatus and CVD method
EP0936284A3 (en) Method and apparatus for producing thin films
WO2003096380A3 (en) Plasma-assisted nitrogen surface-treatment
HK1028070A1 (en) Method for producing coated workpieces, uses and installation for the method.
EP0166383A3 (en) Continuous deposition of activated process gases
EP1357584A3 (en) Method of surface treatment of semiconductor substrates
AU3372999A (en) Method for drying a coated substrate
TW347416B (en) Post treatment method for in-situ cleaning
MY115858A (en) Method and apparatus for purging barrel reactors
DE3371797D1 (en) Rapid rate reactive sputtering of metallic compounds
TW370569B (en) Method for depositing golden titanium nitride
TW370570B (en) Deposition of titanium nitride films having improved uniformity
WO2001078101A3 (en) Method and apparatus for plasma processing
EP0878823A3 (en) Plasma-enhanced chemical vapor deposition apparatus and method M
CA2202026A1 (en) Method of making a diamond-coated composite body
TW363087B (en) CVD-Ti film forming method
MXPA06002679A (es) Deposicion de vapor quimico generado por descarga de brillo.
CA2326239A1 (fr) Procede de carbonitruration a basse pression de pieces en alliage metallique
EP0730266A3 (en) Apparatus for plasma-processing a disk substrate and method of manufacturing a magnetic disk
TW343393B (en) Electron emissive film