TW365690B - Method for forming a silicide region - Google Patents

Method for forming a silicide region

Info

Publication number
TW365690B
TW365690B TW086113668A TW86113668A TW365690B TW 365690 B TW365690 B TW 365690B TW 086113668 A TW086113668 A TW 086113668A TW 86113668 A TW86113668 A TW 86113668A TW 365690 B TW365690 B TW 365690B
Authority
TW
Taiwan
Prior art keywords
forming
silicide layer
layer
silicide region
tisi2
Prior art date
Application number
TW086113668A
Other languages
English (en)
Inventor
Mizobuchi Koichi
Fukuda Yukio
Original Assignee
Texas Instruments Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Texas Instruments Inc filed Critical Texas Instruments Inc
Application granted granted Critical
Publication of TW365690B publication Critical patent/TW365690B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/24Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/14Metallic material, boron or silicon
    • C23C14/18Metallic material, boron or silicon on other inorganic substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34Nitrides
    • C23C16/345Silicon nitride
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40Oxides
    • C23C16/401Oxides containing silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
    • H01L21/28518Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising silicides
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76Unipolar devices, e.g. field effect transistors
    • H01L29/772Field effect transistors
    • H01L29/78Field effect transistors with field effect produced by an insulated gate
    • H01L29/7842Field effect transistors with field effect produced by an insulated gate means for exerting mechanical stress on the crystal lattice of the channel region, e.g. using a flexible substrate

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Mechanical Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Computer Hardware Design (AREA)
  • General Chemical & Material Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Thermal Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Other Surface Treatments For Metallic Materials (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Silicon Compounds (AREA)
TW086113668A 1996-09-18 1997-10-06 Method for forming a silicide region TW365690B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US2693096P 1996-09-18 1996-09-18

Publications (1)

Publication Number Publication Date
TW365690B true TW365690B (en) 1999-08-01

Family

ID=21834621

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086113668A TW365690B (en) 1996-09-18 1997-10-06 Method for forming a silicide region

Country Status (4)

Country Link
EP (1) EP0831521A3 (zh)
JP (1) JPH10116798A (zh)
KR (1) KR19980024663A (zh)
TW (1) TW365690B (zh)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100271948B1 (ko) * 1998-12-01 2000-11-15 윤종용 반도체 장치의 셀프-얼라인 실리사이드 형성방법
US6605513B2 (en) 2000-12-06 2003-08-12 Advanced Micro Devices, Inc. Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
WO2002047145A1 (en) * 2000-12-06 2002-06-13 Advanced Micro Devices, Inc. Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
JP4441109B2 (ja) * 2000-12-08 2010-03-31 株式会社ルネサステクノロジ 半導体装置の製造方法
DE10157627A1 (de) * 2001-11-26 2003-06-12 Forschungszentrum Juelich Gmbh Verfahren zur Herstellung einer Schicht auf einem Substrat
US7470943B2 (en) * 2005-08-22 2008-12-30 International Business Machines Corporation High performance MOSFET comprising a stressed gate metal silicide layer and method of fabricating the same
CN101555016B (zh) * 2008-04-09 2011-06-08 清华大学 硅化镍纳米线的制备方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3639009B2 (ja) * 1994-09-16 2005-04-13 富士通株式会社 Tiシリサイド層を有する半導体装置の製造方法

Also Published As

Publication number Publication date
EP0831521A2 (en) 1998-03-25
KR19980024663A (ko) 1998-07-06
EP0831521A3 (en) 1998-09-16
JPH10116798A (ja) 1998-05-06

Similar Documents

Publication Publication Date Title
EP0724287A3 (en) Method for fabricating semiconductor device having titanium silicide film
EP0725431A3 (en) Method for forming ordered titanium nitride and titanium silicide upon a semiconductor wafer using a three step anneal process
EP0812009A3 (en) Improvements in or relating to semiconductor processing
EP0723286A3 (en) Field-effect transistor and manufacture method thereof
TW371789B (en) Method for fabricating a semiconductor device
EP0905753A3 (en) Method for fabricating a conducting electrode for semiconductor device
TW365690B (en) Method for forming a silicide region
EP0908935A3 (en) Fabrication method of semiconductor device equipped with silicide layer
WO2002047145A1 (en) Method of forming nickel silicide using a one-step rapid thermal anneal process and backend processing
TW353206B (en) Process for producing self-aligned salicide having high temperature stability
WO2003062922A3 (en) Photomask and method for manufacturing the same
NZ314504A (en) Method of bending thin sheet, typically methyl methacrylate, by heating at 80 to 200 degrees centigrade for 5 seconds to 10 minutes then bending in vacuum forming station
EP0898306A3 (en) Method of forming a self-aligned refractory metal silicide layer
EP0392725A3 (en) Method for fabricating integrated circuits with silicide
Wang et al. New CoSi/sub 2/SALICIDE technology for 0.1/spl mu/m processes and below
KR970077210A (ko) 텅스텐 실리사이드를 갖는 반도체소자 제조방법
ZA9710602B (en) Aqueous composition and process for preparing metal substrate for cold forming.
EP0980091A3 (en) A method for decreasing channel hot carrier degradation
EP0607820A3 (en) Method for manufacturing a semiconductor device comprising a layer of metallic silicide on a diffused region.
TW357412B (en) Method for forming a silicide region
TW274633B (en) A method of producing self-aligned silicide
TW366528B (en) Method of manufacturing self-aligned silicide
TW367547B (en) Manufacturing method for metal silicide gate
KR970007818B1 (en) Forming method of titanium silicide contact in the semiconductor device
TW331655B (en) The forming method for salicide