TW364168B - Dry etching method - Google Patents
Dry etching methodInfo
- Publication number
- TW364168B TW364168B TW085109813A TW85109813A TW364168B TW 364168 B TW364168 B TW 364168B TW 085109813 A TW085109813 A TW 085109813A TW 85109813 A TW85109813 A TW 85109813A TW 364168 B TW364168 B TW 364168B
- Authority
- TW
- Taiwan
- Prior art keywords
- samples
- etching
- voltage
- pulse wave
- selectivity
- Prior art date
Links
- 238000000034 method Methods 0.000 title abstract 3
- 238000001312 dry etching Methods 0.000 title 1
- 238000005530 etching Methods 0.000 abstract 3
- 150000002500 ions Chemical class 0.000 abstract 1
- 238000001020 plasma etching Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- ing And Chemical Polishing (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
PCT/JP1995/001846 WO1997011207A1 (fr) | 1995-09-18 | 1995-09-18 | Procede d'attaque a sec |
Publications (1)
Publication Number | Publication Date |
---|---|
TW364168B true TW364168B (en) | 1999-07-11 |
Family
ID=14126266
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085109813A TW364168B (en) | 1995-09-18 | 1996-08-13 | Dry etching method |
Country Status (3)
Country | Link |
---|---|
JP (1) | JP3429776B2 (zh) |
TW (1) | TW364168B (zh) |
WO (1) | WO1997011207A1 (zh) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9222645B2 (en) | 2010-11-29 | 2015-12-29 | RTC Industries, Incorporated | LED lighting assembly and method of lighting for a merchandise display |
TWI811587B (zh) * | 2019-12-09 | 2023-08-11 | 大陸商中微半導體設備(上海)股份有限公司 | 等離子體處理設備以及等離子體處理方法 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5613480A (en) * | 1979-07-13 | 1981-02-09 | Hitachi Ltd | Dry etching apparatus |
JPS62267483A (ja) * | 1986-05-14 | 1987-11-20 | Hitachi Ltd | ドライエツチング装置 |
JPH02159027A (ja) * | 1988-12-13 | 1990-06-19 | Tel Sagami Ltd | プラズマ処理装置 |
JP2693899B2 (ja) * | 1992-10-09 | 1997-12-24 | 栄電子工業株式会社 | Ecrプラズマ加工方法 |
JP3278732B2 (ja) * | 1993-12-27 | 2002-04-30 | 株式会社アルバック | エッチング装置及びエッチング方法 |
-
1995
- 1995-09-18 WO PCT/JP1995/001846 patent/WO1997011207A1/ja active Application Filing
- 1995-09-18 JP JP51255697A patent/JP3429776B2/ja not_active Expired - Fee Related
-
1996
- 1996-08-13 TW TW085109813A patent/TW364168B/zh not_active IP Right Cessation
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9222645B2 (en) | 2010-11-29 | 2015-12-29 | RTC Industries, Incorporated | LED lighting assembly and method of lighting for a merchandise display |
TWI811587B (zh) * | 2019-12-09 | 2023-08-11 | 大陸商中微半導體設備(上海)股份有限公司 | 等離子體處理設備以及等離子體處理方法 |
Also Published As
Publication number | Publication date |
---|---|
WO1997011207A1 (fr) | 1997-03-27 |
JP3429776B2 (ja) | 2003-07-22 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |