TW363203B - Surface waving plasma operation apparatus - Google Patents
Surface waving plasma operation apparatusInfo
- Publication number
- TW363203B TW363203B TW086112334A TW86112334A TW363203B TW 363203 B TW363203 B TW 363203B TW 086112334 A TW086112334 A TW 086112334A TW 86112334 A TW86112334 A TW 86112334A TW 363203 B TW363203 B TW 363203B
- Authority
- TW
- Taiwan
- Prior art keywords
- microwave
- plasma
- dielectric window
- operation apparatus
- coaxial cable
- Prior art date
Links
- 230000005540 biological transmission Effects 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
- Chemical Vapour Deposition (AREA)
- ing And Chemical Polishing (AREA)
- Physical Vapour Deposition (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP23162596A JP3217274B2 (ja) | 1996-09-02 | 1996-09-02 | 表面波プラズマ処理装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
TW363203B true TW363203B (en) | 1999-07-01 |
Family
ID=16926447
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086112334A TW363203B (en) | 1996-09-02 | 1997-08-27 | Surface waving plasma operation apparatus |
Country Status (7)
Country | Link |
---|---|
US (1) | US5886473A (zh) |
EP (1) | EP0827182A3 (zh) |
JP (1) | JP3217274B2 (zh) |
KR (1) | KR19980024249A (zh) |
CN (1) | CN1176486A (zh) |
SG (1) | SG63742A1 (zh) |
TW (1) | TW363203B (zh) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI612853B (zh) * | 2016-03-03 | 2018-01-21 | 表面波電漿裝置 |
Families Citing this family (25)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE19726663A1 (de) * | 1997-06-23 | 1999-01-28 | Sung Spitzl Hildegard Dr Ing | Vorrichtung zur Erzeugung von homogenen Mikrowellenplasmen |
JP4847636B2 (ja) * | 1999-04-16 | 2011-12-28 | クデラ ヨゼフ | プラズマ発生機及びこのプラズマ発生機を備えたプラズマ処理装置 |
JP3650025B2 (ja) * | 2000-12-04 | 2005-05-18 | シャープ株式会社 | プラズマプロセス装置 |
GB2386748B (en) * | 2002-03-16 | 2006-02-08 | Marconi Applied Techn Ltd | Magnetron arrangements |
JP4163432B2 (ja) * | 2002-03-26 | 2008-10-08 | 矢崎総業株式会社 | プラズマ処理装置 |
US6902629B2 (en) * | 2002-04-12 | 2005-06-07 | Applied Materials, Inc. | Method for cleaning a process chamber |
FR2840451B1 (fr) * | 2002-06-04 | 2004-08-13 | Centre Nat Rech Scient | Dispositif de production d'une nappe de plasma |
US6923189B2 (en) * | 2003-01-16 | 2005-08-02 | Applied Materials, Inc. | Cleaning of CVD chambers using remote source with cxfyoz based chemistry |
KR100952854B1 (ko) * | 2003-07-18 | 2010-04-14 | 주성엔지니어링(주) | 대면적 엘씨디기판 제조에 사용되는 플라즈마 발생장치 |
US20060266288A1 (en) * | 2005-05-27 | 2006-11-30 | Applied Materials, Inc. | High plasma utilization for remote plasma clean |
JP2007035604A (ja) * | 2005-07-29 | 2007-02-08 | National Univ Corp Shizuoka Univ | マイクロ波プラズマ発生装置 |
JP5082229B2 (ja) * | 2005-11-29 | 2012-11-28 | 東京エレクトロン株式会社 | プラズマ処理装置 |
CN100406197C (zh) * | 2006-07-17 | 2008-07-30 | 哈尔滨工业大学 | 常压等离子体抛光装置 |
CN100462199C (zh) * | 2007-04-11 | 2009-02-18 | 哈尔滨工业大学 | 常压等离子体抛光方法 |
DE112008001548B4 (de) * | 2007-06-11 | 2013-07-11 | Tokyo Electron Ltd. | Plasmabearbeitungsvorrichtung und Plasmabearbeitungsverfahren |
FR2925217B1 (fr) * | 2007-12-14 | 2013-05-24 | Thales Sa | Structure hyperfrequences pour tube microondes avec dispositif de confinement du faisceau a aimants permanents et refroidissement ameliore |
TWI554630B (zh) | 2010-07-02 | 2016-10-21 | 應用材料股份有限公司 | 減少沉積不對稱性的沉積設備及方法 |
US20120056101A1 (en) * | 2010-09-03 | 2012-03-08 | Semiconductor Energy Laboratory Co., Ltd. | Ion doping apparatus and ion doping method |
TWI465158B (zh) * | 2011-01-12 | 2014-12-11 | Ind Tech Res Inst | 微波電漿激發裝置 |
CN106561446A (zh) * | 2016-10-27 | 2017-04-19 | 合肥优亿科机电科技有限公司 | 微波源高密度低能离子束生物改性设备 |
US11355317B2 (en) * | 2017-12-14 | 2022-06-07 | Applied Materials, Inc. | Methods and apparatus for dynamical control of radial uniformity in microwave chambers |
JP7043704B2 (ja) * | 2018-05-23 | 2022-03-30 | 株式会社エスイー | プラズマ照射装置 |
JP6963848B2 (ja) * | 2018-06-14 | 2021-11-10 | 株式会社エスイー | 原料をマイクロ波表面波プラズマで処理して原料と異なる生成物を得る製造装置及び製造方法 |
CN110769585B (zh) * | 2018-07-27 | 2023-08-18 | 北京北方华创微电子装备有限公司 | 表面波等离子体装置 |
CN110797250B (zh) * | 2018-08-03 | 2022-12-09 | 北京北方华创微电子装备有限公司 | 表面波等离子体加工设备 |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5024716A (en) * | 1988-01-20 | 1991-06-18 | Canon Kabushiki Kaisha | Plasma processing apparatus for etching, ashing and film-formation |
EP0554039B1 (en) * | 1992-01-30 | 1996-11-20 | Hitachi, Ltd. | Method and apparatus for generating plasma, and semiconductor processing methods |
US5306985A (en) * | 1992-07-17 | 1994-04-26 | Sematech, Inc. | ECR apparatus with magnetic coil for plasma refractive index control |
JPH07183095A (ja) * | 1993-12-24 | 1995-07-21 | Hitachi Ltd | マイクロ波プラズマ処理装置 |
JP3199957B2 (ja) * | 1994-06-20 | 2001-08-20 | 株式会社日立製作所 | マイクロ波プラズマ処理方法 |
JPH09171900A (ja) * | 1995-12-20 | 1997-06-30 | Toshiba Corp | プラズマ発生装置 |
-
1996
- 1996-09-02 JP JP23162596A patent/JP3217274B2/ja not_active Expired - Fee Related
-
1997
- 1997-08-27 TW TW086112334A patent/TW363203B/zh not_active IP Right Cessation
- 1997-08-28 SG SG1997003158A patent/SG63742A1/en unknown
- 1997-08-29 US US08/921,364 patent/US5886473A/en not_active Expired - Lifetime
- 1997-08-29 EP EP97306647A patent/EP0827182A3/en not_active Withdrawn
- 1997-09-01 KR KR1019970045390A patent/KR19980024249A/ko not_active Application Discontinuation
- 1997-09-02 CN CN97117927A patent/CN1176486A/zh active Pending
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI612853B (zh) * | 2016-03-03 | 2018-01-21 | 表面波電漿裝置 |
Also Published As
Publication number | Publication date |
---|---|
CN1176486A (zh) | 1998-03-18 |
KR19980024249A (ko) | 1998-07-06 |
JPH1074733A (ja) | 1998-03-17 |
EP0827182A2 (en) | 1998-03-04 |
US5886473A (en) | 1999-03-23 |
EP0827182A3 (en) | 1998-08-26 |
JP3217274B2 (ja) | 2001-10-09 |
SG63742A1 (en) | 1999-03-30 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |