TW357365B - Precision sense amplifiers and memories, systems and methods using the same - Google Patents

Precision sense amplifiers and memories, systems and methods using the same

Info

Publication number
TW357365B
TW357365B TW086118180A TW86118180A TW357365B TW 357365 B TW357365 B TW 357365B TW 086118180 A TW086118180 A TW 086118180A TW 86118180 A TW86118180 A TW 86118180A TW 357365 B TW357365 B TW 357365B
Authority
TW
Taiwan
Prior art keywords
memories
systems
methods
same
sense amplifiers
Prior art date
Application number
TW086118180A
Other languages
English (en)
Inventor
G R Mohan Rao
Original Assignee
Cirrus Logic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Cirrus Logic Inc filed Critical Cirrus Logic Inc
Application granted granted Critical
Publication of TW357365B publication Critical patent/TW357365B/zh

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Amplifiers (AREA)
TW086118180A 1996-12-03 1997-12-03 Precision sense amplifiers and memories, systems and methods using the same TW357365B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/759,760 US5912853A (en) 1996-12-03 1996-12-03 Precision sense amplifiers and memories, systems and methods using the same

Publications (1)

Publication Number Publication Date
TW357365B true TW357365B (en) 1999-05-01

Family

ID=25056847

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086118180A TW357365B (en) 1996-12-03 1997-12-03 Precision sense amplifiers and memories, systems and methods using the same

Country Status (3)

Country Link
US (2) US5912853A (zh)
TW (1) TW357365B (zh)
WO (1) WO1998025272A1 (zh)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3602939B2 (ja) 1996-11-19 2004-12-15 松下電器産業株式会社 半導体記憶装置
US5903502A (en) * 1997-11-25 1999-05-11 Micron Technology, Inc. Variable equilibrate voltage circuit for paired digit lines
KR100297324B1 (ko) * 1998-12-16 2001-08-07 김영환 반도체 집적회로의 증폭기
US6195302B1 (en) 1999-02-05 2001-02-27 United Memories, Inc. Dual slope sense clock generator
US6282137B1 (en) * 1999-09-14 2001-08-28 Agere Systems Guardian Corp. SRAM method and apparatus
FR2801410B1 (fr) 1999-11-24 2003-10-17 St Microelectronics Sa Dispositif de memoire vive dynamique, et procede de lecture correspondant
US6285579B1 (en) * 2000-02-17 2001-09-04 Hewlett-Packard Company System and method for enabling/disabling SRAM banks for memory access
JP3651767B2 (ja) * 2000-04-24 2005-05-25 シャープ株式会社 半導体記憶装置
US6288959B1 (en) 2000-08-04 2001-09-11 Dmel Incorporated Controlling the precharge operation in a DRAM array in a SRAM interface
JP4366858B2 (ja) * 2000-09-18 2009-11-18 ソニー株式会社 Ｍｏｓトランジスタ回路
US6678198B2 (en) * 2001-03-16 2004-01-13 Broadcom Corporation Pseudo differential sensing method and apparatus for DRAM cell
CA2342508A1 (en) * 2001-03-30 2002-09-30 Atmos Corporation Reference cells with integration capacitor
US6728159B2 (en) * 2001-12-21 2004-04-27 International Business Machines Corporation Flexible multibanking interface for embedded memory applications
US6885597B2 (en) * 2002-09-10 2005-04-26 Infineon Technologies Aktiengesellschaft Sensing test circuit
CN101427320B (zh) * 2006-04-24 2011-10-05 Nxp股份有限公司 存储电路以及用于对存储元件进行读出的方法
US8320209B2 (en) * 2010-05-05 2012-11-27 Stmicroelectronics International N.V. Sense amplifier using reference signal through standard MOS and DRAM capacitor
US8576649B1 (en) * 2010-07-02 2013-11-05 Farid Nemati Sense amplifiers and operations thereof
US9436845B2 (en) * 2014-03-25 2016-09-06 Globalfoundries Inc. Physically unclonable fuse using a NOR type memory array
US11935580B2 (en) * 2021-11-18 2024-03-19 Arm Limited System cache peak power management

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4542483A (en) * 1983-12-02 1985-09-17 At&T Bell Laboratories Dual stage sense amplifier for dynamic random access memory
JPS62232796A (ja) * 1986-04-01 1987-10-13 Toshiba Corp 半導体記憶装置
JPH0834058B2 (ja) * 1990-03-19 1996-03-29 シャープ株式会社 半導体メモリ装置
US5253196A (en) * 1991-01-09 1993-10-12 The United States Of America As Represented By The Secretary Of The Navy MOS analog memory with injection capacitors
US5467305A (en) * 1992-03-12 1995-11-14 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
JP3305010B2 (ja) * 1992-09-04 2002-07-22 沖電気工業株式会社 半導体記憶装置
KR0133973B1 (ko) * 1993-02-25 1998-04-20 기다오까 다까시 반도체 기억장치
KR950014256B1 (ko) * 1993-04-06 1995-11-23 삼성전자주식회사 낮은 전원전압을 사용하는 반도체 메모리장치
US5434816A (en) * 1994-06-23 1995-07-18 The United States Of America As Represented By The Secretary Of The Air Force Two-transistor dynamic random-access memory cell having a common read/write terminal
US5526314A (en) * 1994-12-09 1996-06-11 International Business Machines Corporation Two mode sense amplifier with latch

Also Published As

Publication number Publication date
WO1998025272A1 (en) 1998-06-11
US5926428A (en) 1999-07-20
US5912853A (en) 1999-06-15

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