JPS548430A - Sense amplifier - Google Patents

Sense amplifier

Info

Publication number
JPS548430A
JPS548430A JP7404277A JP7404277A JPS548430A JP S548430 A JPS548430 A JP S548430A JP 7404277 A JP7404277 A JP 7404277A JP 7404277 A JP7404277 A JP 7404277A JP S548430 A JPS548430 A JP S548430A
Authority
JP
Japan
Prior art keywords
sense amplifier
precharge
mask
transistor
quickly
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP7404277A
Other languages
Japanese (ja)
Other versions
JPS6011393B2 (en
Inventor
Tadahide Takada
Toshio Takeshima
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP52074042A priority Critical patent/JPS6011393B2/en
Publication of JPS548430A publication Critical patent/JPS548430A/en
Publication of JPS6011393B2 publication Critical patent/JPS6011393B2/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
    • G11C11/409—Read-write [R-W] circuits 
    • G11C11/4091—Sense or sense/refresh amplifiers, or associated sense circuitry, e.g. for coupled bit-line precharging, equalising or isolating

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)

Abstract

PURPOSE:To achieve a sense amplifier which can precharge quickly both digit lines to an identical potential and at the same time minimizes the area on the mask with a high-density integration, by using at least six units of the transistor.
JP52074042A 1977-06-21 1977-06-21 sense amplifier Expired JPS6011393B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP52074042A JPS6011393B2 (en) 1977-06-21 1977-06-21 sense amplifier

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP52074042A JPS6011393B2 (en) 1977-06-21 1977-06-21 sense amplifier

Publications (2)

Publication Number Publication Date
JPS548430A true JPS548430A (en) 1979-01-22
JPS6011393B2 JPS6011393B2 (en) 1985-03-25

Family

ID=13535710

Family Applications (1)

Application Number Title Priority Date Filing Date
JP52074042A Expired JPS6011393B2 (en) 1977-06-21 1977-06-21 sense amplifier

Country Status (1)

Country Link
JP (1) JPS6011393B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5436139A (en) * 1977-08-26 1979-03-16 Toshiba Corp Sense circuit of differential type
WO1981003572A1 (en) * 1980-06-02 1981-12-10 Mostek Corp Semiconductor memory precharge circuit
JPS5782279A (en) * 1980-11-04 1982-05-22 Fujitsu Ltd Semiconductor storage device
JPS59203298A (en) * 1983-05-04 1984-11-17 Nec Corp Semiconductor memory
JPS6231092A (en) * 1985-01-30 1987-02-10 Nec Corp Memory circuit
JPS62103896A (en) * 1985-10-30 1987-05-14 Mitsubishi Electric Corp Dynamic random access memory
JPS62145597A (en) * 1985-12-19 1987-06-29 Mitsubishi Electric Corp Semiconductor memory device
US6100002A (en) * 1992-02-07 2000-08-08 Hitachi Metals, Ltd. Method for developing an electrostatic latent image
JP2003059270A (en) * 2001-08-14 2003-02-28 Fujitsu Ltd Semiconductor memory

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4780850A (en) * 1986-10-31 1988-10-25 Mitsubishi Denki Kabushiki Kaisha CMOS dynamic random access memory

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
IBM TECHNICAL DISCLOSER BULLETIN=1975 *
IEEE INTERNATIONAL SOLID STATE CIRCUITS CONFERENCEDIGEST OF TECHNICAL PAPERS=1977 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5436139A (en) * 1977-08-26 1979-03-16 Toshiba Corp Sense circuit of differential type
WO1981003572A1 (en) * 1980-06-02 1981-12-10 Mostek Corp Semiconductor memory precharge circuit
JPS5782279A (en) * 1980-11-04 1982-05-22 Fujitsu Ltd Semiconductor storage device
JPS59203298A (en) * 1983-05-04 1984-11-17 Nec Corp Semiconductor memory
JPH0480479B2 (en) * 1983-05-04 1992-12-18 Nippon Electric Co
JPS6231092A (en) * 1985-01-30 1987-02-10 Nec Corp Memory circuit
JPS62103896A (en) * 1985-10-30 1987-05-14 Mitsubishi Electric Corp Dynamic random access memory
JPS62145597A (en) * 1985-12-19 1987-06-29 Mitsubishi Electric Corp Semiconductor memory device
US6100002A (en) * 1992-02-07 2000-08-08 Hitachi Metals, Ltd. Method for developing an electrostatic latent image
JP2003059270A (en) * 2001-08-14 2003-02-28 Fujitsu Ltd Semiconductor memory

Also Published As

Publication number Publication date
JPS6011393B2 (en) 1985-03-25

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