TW350974B - Method and apparatus for ion beam neutralization - Google Patents

Method and apparatus for ion beam neutralization

Info

Publication number
TW350974B
TW350974B TW086110393A TW86110393A TW350974B TW 350974 B TW350974 B TW 350974B TW 086110393 A TW086110393 A TW 086110393A TW 86110393 A TW86110393 A TW 86110393A TW 350974 B TW350974 B TW 350974B
Authority
TW
Taiwan
Prior art keywords
ion beam
sustainer
sustained
area
neutralization
Prior art date
Application number
TW086110393A
Other languages
English (en)
Inventor
Victor M Benveniste
Jiong Chen
Original Assignee
Eaton Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eaton Corp filed Critical Eaton Corp
Application granted granted Critical
Publication of TW350974B publication Critical patent/TW350974B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/026—Means for avoiding or neutralising unwanted electrical charges on tube components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/31701—Ion implantation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Plasma Technology (AREA)
  • Electron Sources, Ion Sources (AREA)
TW086110393A 1996-08-02 1997-07-22 Method and apparatus for ion beam neutralization TW350974B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/691,467 US5703375A (en) 1996-08-02 1996-08-02 Method and apparatus for ion beam neutralization

Publications (1)

Publication Number Publication Date
TW350974B true TW350974B (en) 1999-01-21

Family

ID=24776645

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086110393A TW350974B (en) 1996-08-02 1997-07-22 Method and apparatus for ion beam neutralization

Country Status (7)

Country Link
US (1) US5703375A (zh)
EP (1) EP0822571A3 (zh)
JP (1) JP4239116B2 (zh)
KR (1) KR100354992B1 (zh)
CN (1) CN1132227C (zh)
CA (1) CA2210383A1 (zh)
TW (1) TW350974B (zh)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508127B (zh) * 2012-11-13 2015-11-11 E G Electro Graph Inc 用於離子束處理的磁場減少設備和磁等離子淹沒系統

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US6184532B1 (en) 1997-12-01 2001-02-06 Ebara Corporation Ion source
US6271529B1 (en) * 1997-12-01 2001-08-07 Ebara Corporation Ion implantation with charge neutralization
US5959305A (en) * 1998-06-19 1999-09-28 Eaton Corporation Method and apparatus for monitoring charge neutralization operation
US6094012A (en) * 1998-11-06 2000-07-25 The Regents Of The University Of California Low energy spread ion source with a coaxial magnetic filter
US6420713B1 (en) * 1999-04-28 2002-07-16 Nikon Corporation Image position and lens field control in electron beam systems
US6541781B1 (en) 2000-07-25 2003-04-01 Axcelis Technologies, Inc. Waveguide for microwave excitation of plasma in an ion beam guide
US6703628B2 (en) 2000-07-25 2004-03-09 Axceliss Technologies, Inc Method and system for ion beam containment in an ion beam guide
US6414329B1 (en) 2000-07-25 2002-07-02 Axcelis Technologies, Inc. Method and system for microwave excitation of plasma in an ion beam guide
US6476399B1 (en) * 2000-09-01 2002-11-05 Axcelis Technologies, Inc. System and method for removing contaminant particles relative to an ion beam
DE10130464B4 (de) * 2001-06-23 2010-09-16 Thales Electron Devices Gmbh Plasmabeschleuniger-Anordnung
US6583429B2 (en) 2001-08-23 2003-06-24 Axcelis Technologies, Inc. Method and apparatus for improved ion bunching in an ion implantation system
US6635890B2 (en) 2001-08-23 2003-10-21 Axcelis Technologies, Inc. Slit double gap buncher and method for improved ion bunching in an ion implantation system
JP3840108B2 (ja) * 2001-12-27 2006-11-01 株式会社 Ｓｅｎ−Ｓｈｉ・アクセリス カンパニー イオンビーム処理方法及び処理装置
JP3680274B2 (ja) * 2002-03-27 2005-08-10 住友イートンノバ株式会社 イオンビームの電荷中和装置とその方法
US6956223B2 (en) * 2002-04-10 2005-10-18 Applied Materials, Inc. Multi-directional scanning of movable member and ion beam monitoring arrangement therefor
WO2004034914A2 (en) 2002-10-03 2004-04-29 Virginia Tech Intellectual Properties, Inc. Magnetic targeting device
US20040227106A1 (en) * 2003-05-13 2004-11-18 Halling Alfred M. System and methods for ion beam containment using localized electrostatic fields in an ion beam passageway
US6891174B2 (en) * 2003-07-31 2005-05-10 Axcelis Technologies, Inc. Method and system for ion beam containment using photoelectrons in an ion beam guide
FR2861947B1 (fr) * 2003-11-04 2007-11-09 Commissariat Energie Atomique Dispositif pour controler la temperature electronique dans un plasma rce
US6956225B1 (en) * 2004-04-01 2005-10-18 Axcelis Technologies, Inc. Method and apparatus for selective pre-dispersion of extracted ion beams in ion implantation systems
EP1609882A1 (de) * 2004-06-24 2005-12-28 METAPLAS IONON Oberflächenveredelungstechnik GmbH Kathodenzerstäubungsvorrichtung und -verfahren
KR100553716B1 (ko) * 2004-08-02 2006-02-24 삼성전자주식회사 이온 주입 설비의 이온 소스부
US7402816B2 (en) * 2004-11-19 2008-07-22 Varian Semiconductor Equipment Associates, Inc. Electron injection in ion implanter magnets
US7459692B2 (en) * 2004-11-19 2008-12-02 Varian Semiconductor Equipment Associates, Inc. Electron confinement inside magnet of ion implanter
JP4514157B2 (ja) * 2006-06-12 2010-07-28 国立大学法人京都大学 イオンビーム照射装置および半導体デバイスの製造方法
US7655922B2 (en) * 2006-12-07 2010-02-02 Varian Semiconductor Equipment Associates, Inc. Techniques for confining electrons in an ion implanter
US7723699B2 (en) * 2007-06-26 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Cathode having electron production and focusing grooves, ion source and related method
US7723707B2 (en) * 2007-07-23 2010-05-25 Varian Semiconductor Equipment Associates, Inc. Techniques for plasma injection
US7692139B2 (en) * 2007-10-15 2010-04-06 Varian Semiconductor Equipment Associates, Inc. Techniques for commensurate cusp-field for effective ion beam neutralization
US7800083B2 (en) * 2007-11-06 2010-09-21 Axcelis Technologies, Inc. Plasma electron flood for ion beam implanter
CA2735131A1 (en) * 2008-09-02 2010-03-11 Virginia Tech Intellectual Properties, Inc. Intramedullary nail targeting device
WO2012051512A1 (en) 2010-10-14 2012-04-19 Virginia Tech Intellectual Properties, Inc. Intramedullary nail targeting device
JP2013089409A (ja) * 2011-10-17 2013-05-13 Sen Corp イオン注入装置及びイオン注入方法
CN105470084B (zh) * 2014-07-31 2017-12-26 上海凯世通半导体股份有限公司 电子供应系统
US10429745B2 (en) 2016-02-19 2019-10-01 Osaka University Photo-sensitized chemically amplified resist (PS-CAR) simulation
US10048594B2 (en) 2016-02-19 2018-08-14 Tokyo Electron Limited Photo-sensitized chemically amplified resist (PS-CAR) model calibration
KR102177192B1 (ko) 2016-05-13 2020-11-10 도쿄엘렉트론가부시키가이샤 광 작용제의 사용에 의한 임계 치수 제어
CN108732610B (zh) * 2017-04-25 2020-12-25 北京中科信电子装备有限公司 一种新型测量离子束的法拉第装置
CN107293347B (zh) * 2017-07-10 2023-09-29 中国原子能科学研究院 一种束流在线电荷极性转换装置
CN109087840B (zh) * 2018-09-27 2023-11-07 中山市博顿光电科技有限公司 一种水冷式射频中和器
CN113808907B (zh) * 2021-09-18 2024-06-18 中国科学院近代物理研究所 用于负氧离子束产生与引出的磁铁结构

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US4361762A (en) * 1980-07-30 1982-11-30 Rca Corporation Apparatus and method for neutralizing the beam in an ion implanter
US4786814A (en) * 1983-09-16 1988-11-22 General Electric Company Method of reducing electrostatic charge on ion-implanted devices
JPS62103951A (ja) * 1985-10-29 1987-05-14 Toshiba Corp イオン注入装置
JPH0766763B2 (ja) * 1987-03-09 1995-07-19 日本電信電話株式会社 イオン中和器
JPS63221539A (ja) * 1987-03-10 1988-09-14 Mitsubishi Electric Corp イオンビ−ム中性化装置
JPS63274051A (ja) * 1987-04-30 1988-11-11 Sumitomo Electric Ind Ltd イオンビ−ム中性化器
JPS6438959A (en) * 1987-08-04 1989-02-09 Mitsubishi Electric Corp Ion beam neutralization device
US4804837A (en) * 1988-01-11 1989-02-14 Eaton Corporation Ion implantation surface charge control method and apparatus
JPH03216945A (ja) * 1990-01-23 1991-09-24 Mitsubishi Electric Corp イオン注入装置
JPH04308637A (ja) * 1991-04-04 1992-10-30 Matsushita Electron Corp イオンビームの中性化装置
US5164599A (en) * 1991-07-19 1992-11-17 Eaton Corporation Ion beam neutralization means generating diffuse secondary emission electron shower
JPH0689690A (ja) * 1992-09-07 1994-03-29 Nec Yamagata Ltd イオン注入装置のイオンビーム中和装置
US5531420A (en) * 1994-07-01 1996-07-02 Eaton Corporation Ion beam electron neutralizer

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI508127B (zh) * 2012-11-13 2015-11-11 E G Electro Graph Inc 用於離子束處理的磁場減少設備和磁等離子淹沒系統

Also Published As

Publication number Publication date
JP4239116B2 (ja) 2009-03-18
KR19980018332A (ko) 1998-06-05
EP0822571A3 (en) 2001-10-04
CN1132227C (zh) 2003-12-24
EP0822571A2 (en) 1998-02-04
CN1179003A (zh) 1998-04-15
JPH1083783A (ja) 1998-03-31
CA2210383A1 (en) 1998-02-02
KR100354992B1 (ko) 2002-12-26
US5703375A (en) 1997-12-30

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