TW348269B - Inductively coupled parallel-plate plasma reactor with a conical dome - Google Patents

Inductively coupled parallel-plate plasma reactor with a conical dome

Info

Publication number
TW348269B
TW348269B TW086115230A TW86115230A TW348269B TW 348269 B TW348269 B TW 348269B TW 086115230 A TW086115230 A TW 086115230A TW 86115230 A TW86115230 A TW 86115230A TW 348269 B TW348269 B TW 348269B
Authority
TW
Taiwan
Prior art keywords
inductively coupled
plasma reactor
plate plasma
coupled parallel
conical dome
Prior art date
Application number
TW086115230A
Other languages
English (en)
Inventor
Gerhard Schneider
Viktor Shel
Andrew Nguyen
Robert W Wu
Gerald Z Yin
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Application granted granted Critical
Publication of TW348269B publication Critical patent/TW348269B/zh

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
    • H01L21/203—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy using physical deposition, e.g. vacuum deposition, sputtering
TW086115230A 1996-10-18 1997-10-16 Inductively coupled parallel-plate plasma reactor with a conical dome TW348269B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US08/734,015 US6308654B1 (en) 1996-10-18 1996-10-18 Inductively coupled parallel-plate plasma reactor with a conical dome

Publications (1)

Publication Number Publication Date
TW348269B true TW348269B (en) 1998-12-21

Family

ID=24950012

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086115230A TW348269B (en) 1996-10-18 1997-10-16 Inductively coupled parallel-plate plasma reactor with a conical dome

Country Status (5)

Country Link
US (1) US6308654B1 (zh)
EP (1) EP0838841A3 (zh)
JP (1) JPH10149899A (zh)
KR (1) KR19980032909A (zh)
TW (1) TW348269B (zh)

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CN108475609A (zh) * 2015-12-22 2018-08-31 瓦里安半导体设备公司 温控离子源
US10804076B2 (en) 2009-10-27 2020-10-13 Tokyo Electron Limited Plasma processing apparatus and plasma processing method
TWI811828B (zh) * 2020-11-19 2023-08-11 大陸商中微半導體設備（上海）股份有限公司 絕緣窗及其溫度控制方法、及等離子體處理裝置

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