TW346678B - Method for producing memory cell array - Google Patents

Method for producing memory cell array

Info

Publication number
TW346678B
TW346678B TW086103797A TW86103797A TW346678B TW 346678 B TW346678 B TW 346678B TW 086103797 A TW086103797 A TW 086103797A TW 86103797 A TW86103797 A TW 86103797A TW 346678 B TW346678 B TW 346678B
Authority
TW
Taiwan
Prior art keywords
forming
layer
insulator
semiconductor substrate
drain region
Prior art date
Application number
TW086103797A
Other languages
English (en)
Inventor
Jan-Mye Sung
Original Assignee
Vanguard Int Semiconduct Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Vanguard Int Semiconduct Corp filed Critical Vanguard Int Semiconduct Corp
Priority to TW086103797A priority Critical patent/TW346678B/zh
Priority to JP10058292A priority patent/JPH10321820A/ja
Application granted granted Critical
Publication of TW346678B publication Critical patent/TW346678B/zh

Links

Landscapes

  • Semiconductor Memories (AREA)
TW086103797A 1997-03-25 1997-03-25 Method for producing memory cell array TW346678B (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
TW086103797A TW346678B (en) 1997-03-25 1997-03-25 Method for producing memory cell array
JP10058292A JPH10321820A (ja) 1997-03-25 1998-03-10 メモリーセルアレイ製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW086103797A TW346678B (en) 1997-03-25 1997-03-25 Method for producing memory cell array

Publications (1)

Publication Number Publication Date
TW346678B true TW346678B (en) 1998-12-01

Family

ID=21626477

Family Applications (1)

Application Number Title Priority Date Filing Date
TW086103797A TW346678B (en) 1997-03-25 1997-03-25 Method for producing memory cell array

Country Status (2)

Country Link
JP (1) JPH10321820A (zh)
TW (1) TW346678B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6274409B1 (en) * 2000-01-18 2001-08-14 Agere Systems Guardian Corp. Method for making a semiconductor device

Also Published As

Publication number Publication date
JPH10321820A (ja) 1998-12-04

Similar Documents

Publication Publication Date Title
US5798544A (en) Semiconductor memory device having trench isolation regions and bit lines formed thereover
CN1158711C (zh) 存储器单元
US7626223B2 (en) Memory structure for reduced floating body effect
JP5476619B2 (ja) Soi型トランジスタを用いたメモリアレイ
US7898014B2 (en) Semiconductor device structures with self-aligned doped regions and methods for forming such semiconductor device structures
EP0430404B1 (en) Method of manufacturing a capacitor for a DRAM cell
US20070045697A1 (en) Body-contacted semiconductor structures and methods of fabricating such body-contacted semiconductor structures
US5398205A (en) Semiconductor memory device having trench in which word line is buried
KR910005296A (ko) 불휘발성 반도체 기억장치 및 그 제조방법
KR960043227A (ko) 디램(dram) 셀 및 그 제조 방법
CN102097435A (zh) 半导体器件及其制造方法
KR100673673B1 (ko) Dram 셀 장치 및 그 제조 방법
CN1213857A (zh) 减小器件制备中的氧化应力
JPH04233272A (ja) ダブルトレンチ半導体メモリ及びその製造方法
EP1717852A2 (en) Manufacturing method for a trench capacitor for use in a semiconductor memory cell
KR0140044B1 (ko) 메모리 셀중에 절연 구조를 가지는 반도체 메모리 소자
KR100517219B1 (ko) 동적이득메모리셀을갖는dram셀장치및그의제조방법
CN210296297U (zh) 存储器及半导体器件
US5329148A (en) Semiconductor device and preparing method therefor
TW346678B (en) Method for producing memory cell array
CN100388419C (zh) 形成沟槽电容于衬底的方法及沟槽电容
JP2534776B2 (ja) Sdht構造を有するdramセル及びその製造方法
JP2906875B2 (ja) 半導体メモリセル及びその製造方法
JP2674218B2 (ja) 半導体記憶装置
JPS61184867A (ja) Dramセルおよびその製作方法

Legal Events

Date Code Title Description
MM4A Annulment or lapse of patent due to non-payment of fees