TW342524B - Method of depositing SiH4 oxide by fluoro-doped plasma-enhanced chemical vapor deposition - Google Patents
Method of depositing SiH4 oxide by fluoro-doped plasma-enhanced chemical vapor depositionInfo
- Publication number
- TW342524B TW342524B TW085101717A TW85101717A TW342524B TW 342524 B TW342524 B TW 342524B TW 085101717 A TW085101717 A TW 085101717A TW 85101717 A TW85101717 A TW 85101717A TW 342524 B TW342524 B TW 342524B
- Authority
- TW
- Taiwan
- Prior art keywords
- depositing
- fluoro
- vapor deposition
- chemical vapor
- enhanced chemical
- Prior art date
Links
Landscapes
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
A process for producing an integrated circuit, which comprises: producing a semiconductor structure in the interior of, and on a semiconductor substrate; and planarizing the surface of the semiconductor structure; depositing a conductor layer on the surface of the semiconductor structure, and forming a pattern on the conductor layer, in which a pore is formed in the region of the patterned conductor layer; depositing an oxide layer on the patterned conductor layer, in which the oxide layer is doped with fluoro ions by flowing CF4 gas at about 1000 sccm during the deposition of the oxide layer thereby the pore will be filled with the fluoro-doped oxide layer; and completing assembly of the integrated circuit.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085101717A TW342524B (en) | 1996-02-08 | 1996-02-08 | Method of depositing SiH4 oxide by fluoro-doped plasma-enhanced chemical vapor deposition |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085101717A TW342524B (en) | 1996-02-08 | 1996-02-08 | Method of depositing SiH4 oxide by fluoro-doped plasma-enhanced chemical vapor deposition |
Publications (1)
Publication Number | Publication Date |
---|---|
TW342524B true TW342524B (en) | 1998-10-11 |
Family
ID=58263584
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085101717A TW342524B (en) | 1996-02-08 | 1996-02-08 | Method of depositing SiH4 oxide by fluoro-doped plasma-enhanced chemical vapor deposition |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW342524B (en) |
-
1996
- 1996-02-08 TW TW085101717A patent/TW342524B/en not_active IP Right Cessation
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MM4A | Annulment or lapse of patent due to non-payment of fees |