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Internal Circuitry In Semiconductor Integrated Circuit Devices
(AREA)
Formation Of Insulating Films
(AREA)
Abstract
A process for producing an integrated circuit, which comprises: producing a semiconductor structure in the interior of, and on a semiconductor substrate; and planarizing the surface of the semiconductor structure; depositing a conductor layer on the surface of the semiconductor structure, and forming a pattern on the conductor layer, in which a pore is formed in the region of the patterned conductor layer; depositing an oxide layer on the patterned conductor layer, in which the oxide layer is doped with fluoro ions by flowing CF4 gas at about 1000 sccm during the deposition of the oxide layer thereby the pore will be filled with the fluoro-doped oxide layer; and completing assembly of the integrated circuit.
TW085101717A1996-02-081996-02-08Method of depositing SiH4 oxide by fluoro-doped plasma-enhanced chemical vapor deposition
TW342524B
(en)