TW340223B - Circuit that amplifies signals and method for supplying power to a sense amplifier - Google Patents
Circuit that amplifies signals and method for supplying power to a sense amplifierInfo
- Publication number
- TW340223B TW340223B TW086111390A TW86111390A TW340223B TW 340223 B TW340223 B TW 340223B TW 086111390 A TW086111390 A TW 086111390A TW 86111390 A TW86111390 A TW 86111390A TW 340223 B TW340223 B TW 340223B
- Authority
- TW
- Taiwan
- Prior art keywords
- circuit
- sense amplifier
- supplying power
- amplifies signals
- voltage
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
Landscapes
- Amplifiers (AREA)
- Dram (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/695,058 US5767737A (en) | 1996-08-09 | 1996-08-09 | Methods and apparatus for charging a sense amplifier |
Publications (1)
Publication Number | Publication Date |
---|---|
TW340223B true TW340223B (en) | 1998-09-11 |
Family
ID=24791380
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW086111390A TW340223B (en) | 1996-08-09 | 1997-08-08 | Circuit that amplifies signals and method for supplying power to a sense amplifier |
Country Status (2)
Country | Link |
---|---|
US (1) | US5767737A (zh) |
TW (1) | TW340223B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10316581B4 (de) * | 2003-04-10 | 2010-04-22 | Qimonda Ag | Integrierter Speicher mit einer Spannungsgeneratorschaltung zur Erzeugung einer Spannungsversorgung für einen Schreib-Lese-Verstärker |
KR101828872B1 (ko) | 2011-05-23 | 2018-02-14 | 삼성전자주식회사 | 반도체 메모리 디바이스 |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2626160B2 (ja) * | 1990-04-27 | 1997-07-02 | 日本電気株式会社 | 半導体メモリ |
US5325335A (en) * | 1991-05-30 | 1994-06-28 | Integrated Device Technology, Inc. | Memories and amplifiers suitable for low voltage power supplies |
JP2876830B2 (ja) * | 1991-06-27 | 1999-03-31 | 日本電気株式会社 | 半導体記憶装置 |
KR950005095Y1 (ko) * | 1992-03-18 | 1995-06-22 | 문정환 | 양방향성 그로벌 비트 라인을 갖는 dram |
KR0133973B1 (ko) * | 1993-02-25 | 1998-04-20 | 기다오까 다까시 | 반도체 기억장치 |
JPH06309869A (ja) * | 1993-04-28 | 1994-11-04 | Oki Electric Ind Co Ltd | 半導体記憶装置 |
US5539279A (en) * | 1993-06-23 | 1996-07-23 | Hitachi, Ltd. | Ferroelectric memory |
KR0144402B1 (ko) * | 1994-12-30 | 1998-08-17 | 김주용 | 동작전류 소모를 줄인 반도체 메모리 소자 |
KR0144410B1 (ko) * | 1994-12-31 | 1998-08-17 | 김주용 | 반도체 메모리 장치의 리스토어 회로 및 그 구조 |
-
1996
- 1996-08-09 US US08/695,058 patent/US5767737A/en not_active Expired - Lifetime
-
1997
- 1997-08-08 TW TW086111390A patent/TW340223B/zh not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
US5767737A (en) | 1998-06-16 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
MK4A | Expiration of patent term of an invention patent |