TW326108B - The electrostatic discharge protection circuit triggered by capacitor effect (additional 1) - Google Patents
The electrostatic discharge protection circuit triggered by capacitor effect (additional 1)Info
- Publication number
- TW326108B TW326108B TW085102216A01A TW085102216A01A TW326108B TW 326108 B TW326108 B TW 326108B TW 085102216A01 A TW085102216A01 A TW 085102216A01A TW 085102216A01 A TW085102216A01 A TW 085102216A01A TW 326108 B TW326108 B TW 326108B
- Authority
- TW
- Taiwan
- Prior art keywords
- type
- type well
- electrostatic discharge
- pad
- couple
- Prior art date
Links
Abstract
An electrostatic discharge protection circuit triggered by capacitor effect, includes: - N-type semiconductor substrate; - Separately form 1st and 2nd P-type well inside substrate; - Form at least a contact area inside 1st P-type well; - Cover insulation structure on one side of substrate; - Form polysilicon on insulation, and couple to contact area; - Cover dielectric on polysilicon; - Form pad on dielectric that is on top of polysilicon, and build capacitor in between polysilicon and pad; When releasing electrostatic discharge stress to pad, by capacitor to couple with electrostatic discharge voltage and 1st P-type well; - Separately install 1st and 2nd N-type thickly doped area inside 1st P-type well, and couple 1st N-type thickly doped area to pad, and couple 2nd N-type thickly doped area to ground point of circuit, in which, build dual-polarity junction transistor in between N-type thickly doped area and 1st P-type well for uniformly releasing electrostatic discharge stress to pad; - Form NMOS transistor inside 2nd P-type well, and separately couple drain and source to contact area and ground point of circuit, and use power source potential to control gate; When power potential is opened to NMOS transistor, then ground the P-type well.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085102216A01A TW326108B (en) | 1996-03-16 | 1996-03-16 | The electrostatic discharge protection circuit triggered by capacitor effect (additional 1) |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW085102216A01A TW326108B (en) | 1996-03-16 | 1996-03-16 | The electrostatic discharge protection circuit triggered by capacitor effect (additional 1) |
Publications (1)
Publication Number | Publication Date |
---|---|
TW326108B true TW326108B (en) | 1998-02-01 |
Family
ID=58262229
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW085102216A01A TW326108B (en) | 1996-03-16 | 1996-03-16 | The electrostatic discharge protection circuit triggered by capacitor effect (additional 1) |
Country Status (1)
Country | Link |
---|---|
TW (1) | TW326108B (en) |
-
1996
- 1996-03-16 TW TW085102216A01A patent/TW326108B/en active
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