TW326108B - The electrostatic discharge protection circuit triggered by capacitor effect (additional 1) - Google Patents

The electrostatic discharge protection circuit triggered by capacitor effect (additional 1)

Info

Publication number
TW326108B
TW326108B TW085102216A01A TW085102216A01A TW326108B TW 326108 B TW326108 B TW 326108B TW 085102216A01 A TW085102216A01 A TW 085102216A01A TW 085102216A01 A TW085102216A01 A TW 085102216A01A TW 326108 B TW326108 B TW 326108B
Authority
TW
Taiwan
Prior art keywords
type
type well
electrostatic discharge
pad
couple
Prior art date
Application number
TW085102216A01A
Other languages
Chinese (zh)
Inventor
Jau-Neng Wu
Ming-Daw Ke
Original Assignee
Winbond Electronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Winbond Electronics Corp filed Critical Winbond Electronics Corp
Priority to TW085102216A01A priority Critical patent/TW326108B/en
Application granted granted Critical
Publication of TW326108B publication Critical patent/TW326108B/en

Links

Abstract

An electrostatic discharge protection circuit triggered by capacitor effect, includes: - N-type semiconductor substrate; - Separately form 1st and 2nd P-type well inside substrate; - Form at least a contact area inside 1st P-type well; - Cover insulation structure on one side of substrate; - Form polysilicon on insulation, and couple to contact area; - Cover dielectric on polysilicon; - Form pad on dielectric that is on top of polysilicon, and build capacitor in between polysilicon and pad; When releasing electrostatic discharge stress to pad, by capacitor to couple with electrostatic discharge voltage and 1st P-type well; - Separately install 1st and 2nd N-type thickly doped area inside 1st P-type well, and couple 1st N-type thickly doped area to pad, and couple 2nd N-type thickly doped area to ground point of circuit, in which, build dual-polarity junction transistor in between N-type thickly doped area and 1st P-type well for uniformly releasing electrostatic discharge stress to pad; - Form NMOS transistor inside 2nd P-type well, and separately couple drain and source to contact area and ground point of circuit, and use power source potential to control gate; When power potential is opened to NMOS transistor, then ground the P-type well.
TW085102216A01A 1996-03-16 1996-03-16 The electrostatic discharge protection circuit triggered by capacitor effect (additional 1) TW326108B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW085102216A01A TW326108B (en) 1996-03-16 1996-03-16 The electrostatic discharge protection circuit triggered by capacitor effect (additional 1)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW085102216A01A TW326108B (en) 1996-03-16 1996-03-16 The electrostatic discharge protection circuit triggered by capacitor effect (additional 1)

Publications (1)

Publication Number Publication Date
TW326108B true TW326108B (en) 1998-02-01

Family

ID=58262229

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085102216A01A TW326108B (en) 1996-03-16 1996-03-16 The electrostatic discharge protection circuit triggered by capacitor effect (additional 1)

Country Status (1)

Country Link
TW (1) TW326108B (en)

Similar Documents

Publication Publication Date Title
TW335513B (en) Semiconductor component for high voltage
US6466082B1 (en) Circuit technique to deal with floating body effects
CA2040396A1 (en) Semiconductor device with reduced time-dependent dielectric failures
JPS577969A (en) Semiconductor integrated circuit
WO2005045896A3 (en) Lateral high-voltage junction device
AU6272798A (en) Structure for increasing the maximum voltage of silicon carbide power transistors
WO2001006568A3 (en) Trench-gate field-effect transistors and their manufacture
US6046476A (en) SOI input protection circuit
EP0807977A3 (en) Semiconductor device including protection means
KR950010112A (en) Semiconductor protection circuits and devices
GB1309049A (en) Integrated circuit with a protective input circuit
EP0261371A3 (en) Integrated circuit with latch-up protection circuit fabricated by complementary mos technology
WO1999065078A3 (en) Semiconductor device
US5517048A (en) Pad structure with parasitic MOS transistor for use with semiconductor devices
EP1223620A3 (en) Electrostatic discharge protection structure
TW326108B (en) The electrostatic discharge protection circuit triggered by capacitor effect (additional 1)
EP0772238A3 (en) Semiconductor device with protecting means
CN111129002B (en) Electrostatic protection circuit
MY121099A (en) Device contact structure and method for fabricating same.
JPS6237549B2 (en)
JPS5543864A (en) Mis semiconductor device
GB1320290A (en) Protective circuit for an insulated gate field effect transistor
JPS6420651A (en) Semiconductor output buffer device
KR0171106B1 (en) Over voltage protective circuit of semiconductor integrated circuit
EP0097338A3 (en) Reference voltage generating device