TW320724B - - Google Patents
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- Publication number
- TW320724B TW320724B TW085104079A TW85104079A TW320724B TW 320724 B TW320724 B TW 320724B TW 085104079 A TW085104079 A TW 085104079A TW 85104079 A TW85104079 A TW 85104079A TW 320724 B TW320724 B TW 320724B
- Authority
- TW
- Taiwan
- Prior art keywords
- voltage
- terminal
- channel
- circuit
- gate
- Prior art date
Links
- 238000001514 detection method Methods 0.000 claims description 98
- 230000000295 complement effect Effects 0.000 claims description 59
- 230000000875 corresponding effect Effects 0.000 claims description 47
- 239000004065 semiconductor Substances 0.000 claims description 44
- 239000000758 substrate Substances 0.000 claims description 39
- 239000000872 buffer Substances 0.000 claims description 30
- 230000000670 limiting effect Effects 0.000 claims description 30
- 239000003990 capacitor Substances 0.000 claims description 22
- 238000003860 storage Methods 0.000 claims description 19
- 238000006243 chemical reaction Methods 0.000 claims description 13
- 238000004519 manufacturing process Methods 0.000 claims description 12
- 230000003321 amplification Effects 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 238000003199 nucleic acid amplification method Methods 0.000 claims description 9
- 230000002079 cooperative effect Effects 0.000 claims description 8
- 230000008569 process Effects 0.000 claims description 7
- 230000015572 biosynthetic process Effects 0.000 claims description 6
- 238000005516 engineering process Methods 0.000 claims description 3
- 230000005611 electricity Effects 0.000 claims description 2
- PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 3
- 239000006185 dispersion Substances 0.000 claims 2
- 239000006096 absorbing agent Substances 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 239000010410 layer Substances 0.000 description 46
- 238000010586 diagram Methods 0.000 description 27
- 230000002093 peripheral effect Effects 0.000 description 27
- 230000009471 action Effects 0.000 description 12
- 238000012545 processing Methods 0.000 description 10
- 230000006870 function Effects 0.000 description 9
- 238000005468 ion implantation Methods 0.000 description 8
- 230000008859 change Effects 0.000 description 5
- 230000001360 synchronised effect Effects 0.000 description 5
- 230000014759 maintenance of location Effects 0.000 description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 4
- 238000004891 communication Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000012535 impurity Substances 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 230000002441 reversible effect Effects 0.000 description 3
- 239000004576 sand Substances 0.000 description 3
- 101100102920 Arabidopsis thaliana WEB1 gene Proteins 0.000 description 2
- 101100041688 Caenorhabditis elegans sao-1 gene Proteins 0.000 description 2
- 101100309794 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) SEC31 gene Proteins 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 229910021419 crystalline silicon Inorganic materials 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000007639 printing Methods 0.000 description 2
- 230000002829 reductive effect Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 230000003068 static effect Effects 0.000 description 2
- 238000012360 testing method Methods 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 101100346429 Arabidopsis thaliana MRF1 gene Proteins 0.000 description 1
- 101100346432 Arabidopsis thaliana MRF4 gene Proteins 0.000 description 1
- 101100495270 Caenorhabditis elegans cdc-26 gene Proteins 0.000 description 1
- 101100076569 Euplotes raikovi MAT3 gene Proteins 0.000 description 1
- 101100237293 Leishmania infantum METK gene Proteins 0.000 description 1
- 101150108651 MAT2 gene Proteins 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000001276 controlling effect Effects 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 239000000446 fuel Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000011229 interlayer Substances 0.000 description 1
- 230000003446 memory effect Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Dram (AREA)
- Semiconductor Memories (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7353809A JPH09186298A (ja) | 1995-12-28 | 1995-12-28 | ダイナミック型ｒａｍと半導体集積回路装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW320724B true TW320724B (enrdf_load_stackoverflow) | 1997-11-21 |
Family
ID=18433364
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW085104079A TW320724B (enrdf_load_stackoverflow) | 1995-12-28 | 1996-04-08 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH09186298A (enrdf_load_stackoverflow) |
| TW (1) | TW320724B (enrdf_load_stackoverflow) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008066744A (ja) * | 2007-11-05 | 2008-03-21 | Fujitsu Ltd | 半導体記憶装置 |
-
1995
- 1995-12-28 JP JP7353809A patent/JPH09186298A/ja active Pending
-
1996
- 1996-04-08 TW TW085104079A patent/TW320724B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09186298A (ja) | 1997-07-15 |
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