TW319840B - - Google Patents

Download PDF

Info

Publication number
TW319840B
TW319840B TW085110467A TW85110467A TW319840B TW 319840 B TW319840 B TW 319840B TW 085110467 A TW085110467 A TW 085110467A TW 85110467 A TW85110467 A TW 85110467A TW 319840 B TW319840 B TW 319840B
Authority
TW
Taiwan
Prior art keywords
data
cycle
transfer
online
output
Prior art date
Application number
TW085110467A
Other languages
English (en)
Chinese (zh)
Original Assignee
Toshiba Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Co Ltd filed Critical Toshiba Co Ltd
Application granted granted Critical
Publication of TW319840B publication Critical patent/TW319840B/zh

Links

Classifications

    • GPHYSICS
    • G11INFORMATION STORAGE
    • G11CSTATIC STORES
    • G11C11/00Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/4063Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
    • G11C11/407Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Dram (AREA)
  • Information Transfer Systems (AREA)
TW085110467A 1995-09-12 1996-08-28 TW319840B (enExample)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23452095 1995-09-12

Publications (1)

Publication Number Publication Date
TW319840B true TW319840B (enExample) 1997-11-11

Family

ID=16972318

Family Applications (1)

Application Number Title Priority Date Filing Date
TW085110467A TW319840B (enExample) 1995-09-12 1996-08-28

Country Status (2)

Country Link
KR (1) KR100224052B1 (enExample)
TW (1) TW319840B (enExample)

Also Published As

Publication number Publication date
KR100224052B1 (ko) 1999-10-15
KR970017604A (ko) 1997-04-30

Similar Documents

Publication Publication Date Title
TW406267B (en) Refreshing method for a semiconductor memory device and a circuit therefor
TW396307B (en) Singal transmission system using PRD method, receiver circuit for use in the signal transmission, and semiconductor memory device to which the signal transmission system is applied
US5257236A (en) Static RAM
TW426857B (en) Semiconductor integrated circuit memory
US20080225606A1 (en) Data output circuit and method in ddr synchronous semiconductor device
KR960012049B1 (ko) 판독 싸이클 및 기록 싸이클을 수행하는 메모리 및 메모리의 비트 라인쌍의 전압을 균등화하는 방법
KR100252043B1 (ko) 반도체 메모리 장치의 칼럼 선택 신호 제어기 및 칼럼 선택제어 방법
EP1174880B1 (en) Data transfer system for transferring data in synchronization with system clock and synchronous semiconductor memory
JP3177094B2 (ja) 半導体記憶装置
CN1350301B (zh) 具有多级管线结构的高速同步半导体存储器及其操作方法
TW451458B (en) Semiconductor memory device
EP0178922B1 (en) Semiconductor memory device
JP3541179B2 (ja) メモリセルへの書き込みおよびメモリセルからの読み出しを行うためのシステムおよび方法
TW409250B (en) A semiconductor memory device
US6201756B1 (en) Semiconductor memory device and write data masking method thereof
TW382132B (en) Data buffer for multi-state programmable memory
EP0521165A1 (en) Semiconductor storing device
KR100572845B1 (ko) 반도체 집적 회로
TW425566B (en) A multi-bank testing apparatus for a synchronous dram
TW454205B (en) Semiconductor memory device and arrangement method for a semiconductor memory device
CN100541644C (zh) 集成电路
JPH0283891A (ja) 半導体メモリ
TW319840B (enExample)
US6353574B1 (en) Semiconductor memory device having pipe register operating at high speed
TW419897B (en) Semiconductor integrated circuit