TW318966B - - Google Patents

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Publication number
TW318966B
TW318966B TW085110476A TW85110476A TW318966B TW 318966 B TW318966 B TW 318966B TW 085110476 A TW085110476 A TW 085110476A TW 85110476 A TW85110476 A TW 85110476A TW 318966 B TW318966 B TW 318966B
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Taiwan
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layer
conductive
cavity structure
cavity
color
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TW085110476A
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Chinese (zh)
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Motorola Inc
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    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/17Passive-matrix OLED displays
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30Devices specially adapted for multicolour light emission
    • H10K59/35Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels

Description

經濟部中央標隼局員工消費合作社印製 318366 A7 _ " B7 五、發明説明(1 ) 先前申請案之參(0S ----------- 本案曾於!995年i i月i 7日以專利申請案號〇8/56〇,457 在美國提出申請。 - 發明之領域 本發明係關於有機發光二極體影像顯現裝置,及關於一 種供影像顯現裝置之全色彩有機發光二極體(Hght emitting diode,簡稱LED)陣列之新類製法。 發明之背景 ’ —種供影像顯示應用之有機LED陣列,係由許多$列成 行及成列之有機發光像素所構成。要自薄膜電致發光陣列 產圭全色彩顯示,在先前技藝已知有二主要技術。將三個 次像素構成於一像素,每一次像素發出紅,綠或藍色,可 藉以獲致全色彩陣列。此技術通常用於陰極射線管彩色顯 示器。一種替代性全色彩陣列,配合一包含像素成圖案爲 紅’綠及藍色次像素之濾色鏡陣列,利用一白色發射體作 爲背光。產生全色彩之第二種技術,曾廣泛用於全色彩液 晶顯示器。 在全色彩有機電致發光顯示器,由於大多數有機LED裝 置之發光效率限制’以濾色鏡爲基礎之技術通常被認爲較. 不合適。 在全色彩陣列,每一個別有機發光像素分開爲紅,綠及 藍色次像素。每一次像素通常以一光透射第—電極,一有 機電致發光媒質敷著在第一電極上,及一在有機電致發光 媒質上面之金屬電極所構成。次像素之彩色係由所採用之 _____^_ - 4 - 冬紙張尺度適财關家縣(CNS—〉A4胁(21QX297公瘦) ------ I I I I —裝 I I I 訂 m 線 (請先閎讀背面之注意事項再填象本頁)- _ ___'·-- 318366 . A7 __- B7 五、發明説明(2 ) 電致發光媒質所確定。電極連接諸像素,以形成一種平面 X-Y定址圖案。事實上,Χ_γ定址圖案爲將光透射電極 在X方向作成圖案,並將金屬電極在γ方向作成圖案,而 X及Υ方向爲彼此垂直所完成。通常藉網板或蝕刻技術完 成電極之形成圖案。由於網板之技術限制,故影像顯示器 僅利用蚀刻法’其通常具_有次像素間距小於〇 _ 2毫米β 依蝕刻法所使用之媒質而定,蝕刻技術可分爲兩類:濕 式及乾式。濕蝕刻係在一種酸性液體媒質中進行,而乾蝕 刻適常在等離子體大氣中實施。 〜Printed 318366 A7 _ " B7 by the Employee Consumer Cooperative of the Central Standard Falcon Bureau of the Ministry of Economic Affairs V. Description of the Invention (1) The reference of the previous application (0S ----------- This case was in! i filed an application in the United States on the 7th with patent application No. 08 / 56〇, 457.-Field of the Invention The present invention relates to an organic light emitting diode image display device and a full-color organic light emitting device for an image display device A new type of manufacturing method for Hght emitting diode (LED) arrays. Background of the Invention '-An organic LED array for image display applications is composed of many organic light-emitting pixels in rows and columns. The electroluminescence array produces a full-color display. In the prior art, there are two main technologies. Three sub-pixels are formed into a pixel, and each pixel emits red, green or blue, which can be used to obtain a full-color array. This technology Commonly used in cathode ray tube color displays. An alternative full-color array, combined with a color filter array containing pixels patterned in red, green and blue sub-pixels, uses a white emitter as the backlight. The second technology of full color has been widely used in full color liquid crystal displays. In full color organic electroluminescent displays, due to the limitation of the luminous efficiency of most organic LED devices, the technology based on color filters is generally considered to be less. In the full-color array, each individual organic light-emitting pixel is divided into red, green, and blue sub-pixels. Each pixel usually transmits a first electrode with a light, and an organic electroluminescent medium is coated on the first electrode, And a metal electrode on the organic electroluminescent medium. The color of the sub-pixel is determined by the adopted _____ ^ _-4-Winter paper size suitable for Guanjia County (CNS—> A4 threat (21QX297 male thin) ------ IIII-Install III to order m line (please read the precautions on the back and then fill in this page)-_ ___ '·-318366. A7 __- B7 5. Description of the invention (2) Determined by the light-emitting medium. The electrodes are connected to the pixels to form a planar XY addressing pattern. In fact, the X_γ addressing pattern is to pattern the light-transmitting electrode in the X direction, and the metal electrode in the γ direction, and the X and Y directions For each other Completed vertically. The patterning of the electrodes is usually accomplished by screen or etching technology. Due to the technical limitations of screen, the image display only uses the etching method. It usually has a sub-pixel pitch of less than 0_ 2 mm. According to the etching method Depending on the medium used, etching techniques can be divided into two types: wet and dry. Wet etching is performed in an acidic liquid medium, and dry etching is usually carried out in the plasma atmosphere. ~

Scozzafava在ΕΡ 349,265號揭示一種有機電致.發光影像 顯不裝置及其依據濕蝕刻技術之製法。供有機LEDs中之 陰極接觸點用之金屬電極通常包含一種穩定金屬及一種在 酸蝕刻過程中無法繼續存在之高反應金屬(功函數少於4 eV)。 供有機LED陣列中之金屬電極之乾蝕刻法也有問題。在 乾蝕刻法所需之高溫(>2〇(rc )及反應離子大氣可能影響 有機LED陣列中之金屬電極所含有機材料以及活性金屬之 完整性》 經濟部中央標準局員工消费合作社印製Scozzafava in EP 349,265 discloses an organic electroluminescence image display device and its manufacturing method based on wet etching technology. The metal electrode for the cathode contact in organic LEDs usually contains a stable metal and a highly reactive metal (work function less than 4 eV) that cannot continue to exist during acid etching. There are also problems with dry etching methods for metal electrodes in organic LED arrays. The high temperature (> 2〇 (rc) and reactive ion atmosphere required by the dry etching method may affect the integrity of the organic materials and active metals contained in the metal electrodes in the organic LED array "Printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs

Tang在美國專利5,2 76,3 8 〇號、揭示一種製造平面陣列 ,而無需蝕刻金屬電極之障壁法。該障壁法包括:構成電 介/壁,其與透明電極正交,能掩蓋相鄰之像素區域,並 且高度超過有機媒質之厚度;敷著有機電致發光媒質;以 及相對於敷著面自15。至4、5。之角度敷著陰極金屬。由於 電介質壁之高度超過有機媒質之厚度,故形成隔離之平行 本紙張尺纽财闕家標 318966 - Α7 -------~~____' 67_ 五、發明説明(3 ) 金屬條。因此,無需金屬蝕刻便完成χ _ γ可定址陣列。雖 然此法似乎適用於金屬圖案形成,但其限於一定之間距尺 寸,並可能在陣列中之像素造成漏泄。 在1995年3月22日所提出,案號08/409 129,名稱爲 Full Color Organic Light Emitting .Diode Array"之待決美 國專利申請案,揭示一種射i片上製成全色彩二極 體陣列之新穎方法。不過,在有些應用,希望在半導體基 片上製成二極體陣列,以便驅動器及類似元件能直接與陣 列成爲整體。由於半導體基片通常不透所發射之光7故在 陣列上及在製造方法上必須.作若干重.要之修改。. 因(,合宜提供一種克服此等問題之全色彩有機LED陣 列。. 因1,本發明之—項目的爲提供一種製造供影像顯示應 用之全色彩有機LED陣列之新穎方法。 本發明之另一目的爲提供一種製成泰迷片上之全 色彩有機LED陣列,及進行製造之新穎方法。 本發明之另一目的爲提供一種在其内構成全色彩有機 LED陣列之腔結構。 經濟部中央標準局員工消費合作社印装 本發明之又一目的爲提供一種供影像顯示應用,具有改 進可靠性之鈍化全色彩有機LED陣列。 發明之概述+ -- 在一種包括一有平面表面之半導體基片之全色彩有機發 光二極體陣列,至少部份舍決以上及其他種種問題,並實 現以上及其他諸多目的。許多橫向間開之導電條成行排列 -6- 本紙張尺度適用中國國家梂準(CNS ) Α4規格(210Χ297公釐)Tang in US Patent No. 5,276,380 discloses a barrier method for manufacturing a planar array without the need to etch metal electrodes. The barrier method includes: forming a dielectric / wall, which is orthogonal to the transparent electrode, can cover adjacent pixel areas, and has a height exceeding the thickness of the organic medium; applying an organic electroluminescent medium; and relative to the application surface from 15 . To 4, 5. The angle is covered with cathode metal. Since the height of the dielectric wall exceeds the thickness of the organic medium, the isolated parallels are formed. This paper ruler is 318966-Α7 ------- ~~ ____ '67_ 5. Description of the invention (3) Metal strip. Therefore, no metal etching is required to complete the χ γ addressable array. Although this method seems to be applicable to the formation of metal patterns, it is limited to a certain distance and may cause leakage in pixels in the array. Proposed on March 22, 1995, Case No. 08/409 129, with the name of Full Color Organic Light Emitting. Diode Array " pending US patent application, revealing a full-color diode array made on the i-chip Novel methods. However, in some applications, it is desirable to form a diode array on the semiconductor substrate so that the driver and similar components can be directly integrated with the array. Since the semiconductor substrate is usually opaque to the emitted light, it is necessary to make several important modifications on the array and the manufacturing method. . For (, it is appropriate to provide a full-color organic LED array that overcomes these problems .. 1. The purpose of the present invention is to provide a novel method for manufacturing a full-color organic LED array for image display applications. One objective is to provide a full-color organic LED array made on Thai fans and a novel method of manufacturing. Another objective of the present invention is to provide a cavity structure in which a full-color organic LED array is formed. Central Standard of the Ministry of Economic Affairs Bureau Staff Consumer Cooperative Printed Another object of this invention is to provide a passivated full-color organic LED array with improved reliability for image display applications. SUMMARY OF THE INVENTION +-In a semiconductor substrate that includes a flat surface Full-color organic light-emitting diode array, at least partly resolve the above and other problems, and achieve the above and many other purposes. Many horizontally spaced conductive strips are arranged in rows-6- This paper scale is applicable to the Chinese National Standards ) Α4 specification (210Χ297mm)

經濟部中央橾準局負工消費合作社印裝 在基片之表面,而基片表面之若干部份在其間露出,並且 在導電條及基片表面之該等部份上敷著—層電=質= =予=:以界定許多腔結構,每—腔結構界定: /像素,以許夕腔、结構成行位於與許多導電條 ,而個別腔結構位於盥一關麽之壤^ '、覆1關係 道…、 κ導電條成覆蓋關係,俾使 導電條(-邵份露出。在諸腔結構在關聯之導電條= 交錯敷著三種電致發光媒質,.各包 生如二 射導電材料,每-個別行4.::::: 僅包含二種電致發光媒質中之—種。.一種透明電介*材料 2密封貼靠在腔結構上,並且導電材料予以成列連接爲 與導電條正交,以完成陣列。 … 本案也揭示-種全色彩有機發光二極體陣列之法 中重複若干以上步驟,以形成二或三組次像素。 、 掛圖之簡要説明 請參照附圖,其中相同號碼在所有諸圖中指示相同部份 圖1爲不同之腔結構,故意示於同_基片上 尺寸差異之平面圖; 1不具 圖2,3,4及5爲在製造一.像素'之連續階段之平面圖, 該像素具有體現本發明之有機LED陣列之三次像素 圖6爲有機LED陣列之頂視平面圖,爲容易檢視 剖開;以及 1十刀 圈7爲簡化頂視平面圖,其部份剖開,例示根據 之LED陣列之—部份。 貧月The Ministry of Economic Affairs, Central Bureau of Preservation and Employment Cooperatives printed on the surface of the substrate, and some parts of the surface of the substrate are exposed between them, and the conductive strips and these parts of the surface of the substrate are coated with-layer electricity = quality = = 予 =: To define many cavity structures, each-cavity structure is defined: / pixel, to Xu Xi cavity, the structure is located in a row with many conductive strips, and the individual cavity structure is located in the land of the bathroom ^ ', cover 1 In relation to ..., the κ conductive strips are in a covering relationship, so that the conductive strips (-Shaofen are exposed. In the cavity structures, the related conductive strips = three electroluminescent media are interleaved, each of which is like a second shot conductive material, Each-individual row 4. ::::: Contains only one of the two electroluminescent media: a transparent dielectric * material 2 sealed against the cavity structure, and the conductive materials are connected in rows to be conductive The strips are orthogonal to complete the array .... This case also reveals that a full-color organic light-emitting diode array method repeats several of the above steps to form two or three groups of sub-pixels. For a brief description of the wall chart, please refer to the drawings, in which The same number indicates the same part in all figures 1 is a different cavity structure, which is intentionally shown in the plan view of the size difference on the same substrate; 1 does not have figures 2, 3, 4 and 5 are plan views in a continuous stage of manufacturing a pixel. The pixel has an organic structure embodying the present invention Three Pixels of LED Array Figure 6 is a top plan view of an organic LED array, cut away for easy inspection; and 10 knives 7 is a simplified top plan view, partly cut away, illustrating part of the LED array according to. Poor month

1. ^ 装-- (請先閲讀背面之注意事項再填寫本頁} 訂 咸 ----------1!1. ^ Pack-- (Please read the precautions on the back before filling out this page) Order Xian ---------- 1!

• I—- I I 318966 B7• I—- I I 318966 B7

經濟部中央標準局員工消費合作社印製 較佳實施例之説明_ 由於裝置特徵尺寸常在次微米範圍,故圖式係成比例爲 供谷易檢視面非尺寸準確度。請特別參照圖1,溝道1 〇及 凹穴20之平面圖故意示於同一基片上,以例示其尺寸差 異。如即將説明,溝道及凹穴通常均爲將一已敷著在一種 合適金屬或類似者之導電條101(請見圖2)上面之電介質 層1 0 3以光刻方式作成圖案所.形成該等導電條復由下面 之半導體基片100所支承。 ' 每’ 一構道1 0界定爲一長、窄、直·、:深之凹下部丨,有 四相對陡削(實際爲垂直)之側面_形成在電介.質層.1 03上3 每一溝道10 —般如圖1中所示,取長方體之形狀。一溝道 1 0通常在一垂直於下面導電條1 ο 1之方向(例如請見圖6) ’或平行於下面導電條101並在其上面延伸越過基片1〇〇 。在此特定實施例’溝道1 0較佳爲垂直於下面導電條丨 ,俾形成一 X-Y可定址矩陣β在每一單—溝道1〇中可構 成許多像素。 每一凹穴20界定爲一形成於電介質層1〇3 ,有一矩形, 正方形或圓形開口,及陡削(實際爲垂直)側壁之孔。凹穴 2 0之特徵在於開口之小特色大小、及近乎各向同性形狀。 許多凹穴20構成一行越過基片1〇〇,與下面導電條1〇1成 覆蓋關係(例如請見圖6 )。每一凹穴_2 0界定陣列中之—次 像素之形狀。如即將解釋,溝道10或凹穴2〇可用於製造 影像顯示器之全色彩有機£ed陣列。爲便於進一步說明, 溝道10及凹穴20在下文均概括稱作腔結構,該用語也包 -8 - 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) I---------^------1T------^ (請先聞讀背面之注意事項再填寫本頁) _____ *- 經濟部中央標準局貝工消費合作社印製 五、發明説明( 括在此等結構之其他種種變化。 將仃説明之LED陣列,其特徵爲該陣列能夠全色彩影像 顯不。每一像素由三次像素所構成,各有一種能發出—不 同色彩,較佳爲紅,或綠,或藍色光之電致發光媒質。每 —次像素構成爲有一腔結構,有導電條101在底部,電介 媒質在侧壁上及一種透明電介質材料在上面。在本案揭示 種根據本發明,製造供影像顯示應用之全色彩有機LED 車歹J之方法。圖2,3,4及5爲剖面圖,例示一有機led 陣列I二次像素之單一像素在連續製造階段。〜 請參照圖2,像素之構造係以一比較扁平之半·導體基片 1 〇〇開始,其可例如爲一般之CM0S基片(即將更詳細解釋) 通#可使用任何半導體材料製成之基片,但CM0S基片 因爲可包括有低功率驅動器组件而爲較佳。通常,將會在 2片上所產生之有機LED陣列及任何高階狀或類似構造可 π被慣用之平面化克服前,形成驅動電路及其他積體電路 。將一層導電材料敷著在基片1〇〇之上表面,該層爲選自 各種穩定金屬,有機或無機導體,諸如鋁、銀、銅或金3 然後藉習知之平版印刷技術將該層作成圖案,以形成許多 平行導電條101 ’其能以行方式七或如希望,則反之爲列 万式)予以定址,並將在最後之陣列用作陽極或陰極電極( 在此特定實施例爲陰極P 藉諸如熱蒸發,噴濺或等離子體增強化學蒸敷技術,將 ―層電介媒質103敷著在導'電條101及基片1〇〇之露出部份 上面。用於構成腔結構之電介媒質103可爲—種有機聚合 請 先* 聞·‘ 讀1 · 之- 注 意. 事 項 再 填 寫-本 頁 裝 訂 線 9- 本紙張尺度適用巾關家辟(CNS )从齡(2歌297公瘦Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. Description of the Preferred Embodiments_ Because the device feature size is often in the sub-micron range, the pattern is proportional to the non-dimensional accuracy for Gu Yi ’s inspection surface. With particular reference to FIG. 1, the plan views of the channel 10 and the cavity 20 are intentionally shown on the same substrate to illustrate the difference in size. As will be explained shortly, the channel and the cavity are usually formed by patterning a dielectric layer 1 0 3 on a conductive strip 101 (see FIG. 2) that has been applied to a suitable metal or the like by photolithography. The conductive strips are supported by the semiconductor substrate 100 below. 'Every' one structure 10 is defined as a long, narrow, straight ·: deep concave part, with four relatively steep (actually vertical) sides _ formed on the dielectric. Mass layer. 1 03 on 3 Each channel 10 generally takes the shape of a rectangular parallelepiped as shown in FIG. 1. A channel 10 is usually in a direction perpendicular to the lower conductive strip 1 ο 1 (see, for example, FIG. 6) or parallel to the lower conductive strip 101 and extends over the substrate 100 above it. In this particular embodiment, the channel 10 is preferably perpendicular to the underlying conductive strips, so as to form an X-Y addressable matrix β in each single-channel 10 can constitute many pixels. Each cavity 20 is defined as a hole formed in the dielectric layer 103, having a rectangular, square or circular opening, and steep (practically vertical) side walls. The characteristics of the recess 20 are the small characteristic size of the opening and the nearly isotropic shape. Many recesses 20 form a row across the substrate 100, in a covering relationship with the underlying conductive strip 101 (see, for example, FIG. 6). Each cavity_2 0 defines the shape of a sub-pixel in the array. As will be explained shortly, the trench 10 or the recess 20 can be used to manufacture a full-color organic array of image displays. For the sake of further explanation, the trench 10 and the recess 20 are collectively referred to as the cavity structure in the following, and the term also includes -8-This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) I --- ------ ^ ------ 1T ------ ^ (please read the precautions on the back and then fill out this page) _____ *-Printed by Beigong Consumer Cooperative, Central Bureau of Standards, Ministry of Economic Affairs Description of the invention (including various other changes in the structure. The LED array described below is characterized in that the array can display full-color images. Each pixel is composed of three pixels, each of which can emit-different colors , Preferably red, or green, or blue light electroluminescent medium. Each sub-pixel is configured with a cavity structure, with a conductive strip 101 at the bottom, a dielectric medium on the side wall and a transparent dielectric material on top. In this case, a method for manufacturing a full-color organic LED vehicle for image display applications according to the present invention is disclosed. Figures 2, 3, 4 and 5 are cross-sectional views illustrating a single pixel of an organic LED array I with secondary pixels in continuous Manufacturing stage. ~ Please refer to Figure 2, the pixel structure is a ratio The flatter half-conductor substrate starts at 1000, which can be, for example, a general CMOS substrate (more on this later). ## A substrate made of any semiconductor material can be used, but the CM0S substrate can include low Power driver components are preferred. Generally, the organic LED array and any high-order or similar structures generated on the two pieces can be driven by conventional planarization to form driver circuits and other integrated circuits. The material is applied on the upper surface of the substrate 100, the layer is selected from various stable metals, organic or inorganic conductors, such as aluminum, silver, copper or gold 3 and then the layer is patterned by conventional lithography techniques, Many parallel conductive strips 101 'are formed which can be addressed in a row 7 or vice versa if desired), and will be used as an anode or cathode electrode in the final array (in this particular embodiment the cathode P is borrowed from such as Thermal evaporation, sputtering or plasma-enhanced chemical vapor deposition technology applies a layer of dielectric medium 103 on the exposed portion of the conductive strip 101 and the substrate 100. The dielectric medium used to form the cavity structure 103 can be - kind of organic polymeric please first * heard * 'Read 1 ·'s - CAUTIONS and then fill in - this page stapling line 9- This paper scales applicable towel Kwan provision (CNS) from age (2 songs 297 male thin

趣濟部中夬#準局員工消費合作社印製 318966 物或無機材料。較佳爲使用一種無機電介質材料,諸如-氧化矽,氮化矽,或氧化鋁,其通常對氧及濕氣爲—種較 有機聚合物材料爲較佳之阻擋物。電介媒質103之厚度2 定腔結構之深度,並可爲10微米至01微米不等。爲2易 處理,以厚度少於1微米爲較佳。 一層1 05光敏抗蚀劑旋塗在電介媒質1 03上面,並藉 光源通過一掩模(未示)作成圖案。雖然正及負抗蝕劑均可 使用,但使用正抗蝕劑因爲其高解析度及優越抗蝕性而爲 較佳。在、熱處理後,抗蝕劑層1 〇5予以顯像,以使子面之 電介媒質103露出。電介媒質1〇3然後藉習知之·濕或乾蝕 刻技術作成圖案,以形成一腔結構或諸腔結構丨〗2。乾蝕 刻通常因爲其提供比較直或實際垂直側壁之各向異性特性 而爲較佳。 在目前’具有功函數少於4.0 ev之金屬,例如鋰,鎂, 銦’鈣等’通常用作陰極材料,俾獲得一種有效率之lEd 顯示器。可以想像在最近之未來,具有功函數大於4.0 之金屬也可採用作爲陰極材料,因爲用於電致發光媒質之 材料之電子注射及傳遞能力改進,而產生有效率之LED顯 示器。如1994年9月12日所提出·ν並讓渡予同一受讓人, 名稱爲 Organic LED With Improved Efficiency",案號 08/304,454之待決美國專利申請案申所解釋,利用一導電 層包括具有功函數實際與LED之有機材料之電子親合性匹 配之材料,可藉以達到最-效率。在本實施例,一層匹配 功函數導電材料位於腔ll2内,作爲導電條1〇1之一部份趣 济 部 中 夬 #The quasi-bureau employee consumer cooperative printed 318966 or inorganic materials. It is preferred to use an inorganic dielectric material, such as silicon oxide, silicon nitride, or aluminum oxide, which is generally a better barrier to oxygen and moisture than organic polymer materials. The thickness of the dielectric medium 103 is fixed to the depth of the cavity structure, and can vary from 10 microns to 01 microns. It is 2 easy to handle, and the thickness is preferably less than 1 micron. A layer of 105 photoresist is spin coated on the dielectric medium 103 and patterned by a light source through a mask (not shown). Although both positive and negative resists can be used, the use of positive resists is preferred because of their high resolution and superior corrosion resistance. After the heat treatment, the resist layer 105 is developed to expose the dielectric medium 103 on the sub-face. The dielectric medium 103 is then patterned by a known wet or dry etching technique to form a cavity structure or cavity structures [2]. Dry etching is generally preferred because it provides the anisotropy of relatively straight or actual vertical sidewalls. Currently, metals having a work function of less than 4.0 ev, such as lithium, magnesium, indium, calcium, etc., are commonly used as cathode materials to obtain an efficient LED display. It is conceivable that in the near future, metals with a work function greater than 4.0 can also be used as cathode materials, because materials used for electroluminescent media have improved electron injection and transmission capabilities, resulting in efficient LED displays. As proposed on September 12, 1994 and transferred to the same assignee, the name is Organic LED With Improved Efficiency ", as explained in the pending US Patent Application No. 08 / 304,454, the use of a conductive layer includes Materials with work functions that actually match the electronic affinity of the organic materials of the LED can be used to achieve the most efficient. In this embodiment, a layer of matching work function conductive material is located in the cavity ll2 as a part of the conductive strip 101

本紙張尺度相巾關家縣(CNS ) A4祕(2敝297公釐) 經濟部中央標準局員工消費合作社印製 、發明説明(8 ) ’或直接在其表面上’並且即將解釋,相似材料位於每一 腔内》爲此項揭示之㈣’匹配功函數導電材料視爲導電 條1 01之一部份。 一種電致發光媒質202敷著在腔結構i 12内,並且與許 多導電條101之一單—導電條成覆蓋關係。電致發光媒質 202係由(僅爲供舉例目的)一層電子傳遞材料,一層能發 出第一色彩之活性發射體材料,及一層孔傳遞材料所構成 。由於各個別諸層電致發光材料2〇2及其組合爲已知者, 故每一個別層在本文不予詳細説明。.將一層2〇2A g明導 電材料,諸如導電聚苯胺(PANI),或銦錫氧化物(ιτ〇)敷 著在腔結構11 2内,作爲第二電極(例如陽極)。層2〇2Α可 藉任何方便方法,諸如蒸發或鑄塑,位於或敷著於腔結構 112内,而不損壞電致發光材料2〇2。爲此項揭示目的, 層202Α可視爲電致發光材料2〇2之一部份。 然後敷著一厚層1 06之透明電介質材料,諸如藉低溫等 離子體增強化學蒸敷(PECVD)所敷著之以〇2,氮化矽,或 —種透明全氟聚合物(例如Tefl〇n_af),作爲供腔結構112 之蓋,藉以密封腔結構112之上端或開口 β層1〇6之厚度 予以控制’以便腔結構1 12恰好塡滿至電介媒質1〇3之高 度。脱除光敏抗蚀劑層105,以完成像素中能發出第一色 彩(在此特定實施例爲紅色)之第一次像素。 請參照圖3,圖示一第二次像素之構成。大致如以上所 述,一層107光敏抗蝕劑#以旋塗在第一次像素及電介媒 質103上面,並且作成圖案及顯像。已露出之電介媒質 {請先閏讀背面之注意事項再填寫本頁) -裝. 訂 線 • - I —II I 1 11 - ^紙伕尺度適用中國國家榇準(CNS ) Α4規格(210Χ297公董 A7 B7 五、發明説明(9 103然後作成圖案,以专 . 靠近第一次像素形成一第二腔結構 或諸結構113。將一種 ,. 对裡%致發光媒質203敷著於腔結構ι13 並與許多導電條! 〇 i之單—導電條成覆蓋關係。如配合 电致發光媒質202所解釋,電致發光媒質2Q3通常由一層 見子傳遞材料’ 一層能發出第二色彩之活性發射體材料, 及層孔傳遞材料所構成。然後敷著一層203 A透明導電 材料作爲第二電極(例如陰極)。層203A可藉任何方便方 法’:諸如蒸發或鑄塑,位於或敷著於腔結構H3内,而不 才貝壞私致、發光材料203。爲此項揭示目的,層2〇3A可視爲 電致發光材料203之一部份。 然:後敷著一厚層108之透明電介質材料,諸如藉低溫 PECVD所敷著之以〇2,氮化碎,或—種透明全氟聚.合物( 例如Teflon AF ),作爲供腔結構工丨3之蓋,藉以密封腔結 構113之上端或開口 β層1〇8之厚度予以控制,以便腔結構 113恰好填滿至電介媒質1〇3之高度。脱除光敏抗蝕劑層 107 ’以心成像素中能發出第二色彩(在此特定實施例爲綠 色)之第一次像素之構造。 請參照圖4,圖示一第三次像素之構成。大致如以上所 述’一層1 09光敏抗蝕劑予以旋塗在第一及第二次像素及 電介媒質103上面,並且作成圖案及顯像。已露出之電介 媒質1 03然後作成圖案,以靠近_第一—及第二次像素形成一 第三腔結構或諸結構114。將一種電致發光媒質2〇4敷著於 腔結構114,並與許多導電條1〇1之單一導電條成覆蓋關 係。如配合電致發光媒質2〇2及2〇3所解釋,電致發光媒 -12- 本紙乐尺度適对中国國家標準(CNS ) Α4規格(210Χ297公釐 I¾------iT——-----10 - - · · : (請先閲讀背面之注意事項再填寫本頁) II __ - - _ 經濟部中央標隼局員工消費合作社印褽The size of this paper is related to Guanjia County (CNS) A4 (2297 mm). Printed and invented by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs (8) 'or directly on the surface' and will be explained soon, similar materials "Located in each cavity" is the "matching work function conductive material" disclosed in this item as part of the conductive strip 101. An electroluminescent medium 202 is laid in the cavity structure i12, and is in a covering relationship with one of the many conductive strips 101, a single conductive strip. The electroluminescent medium 202 consists of (for exemplary purposes only) a layer of electron transport material, a layer of active emitter material capable of emitting the first color, and a layer of pore transport material. Since the individual layers of electroluminescent material 200 and combinations thereof are known, each individual layer will not be described in detail herein. A layer of 2〇2A g bright conductive material, such as conductive polyaniline (PANI), or indium tin oxide (ιτ〇) is applied in the cavity structure 112 as a second electrode (for example, anode). The layer 2〇2Α can be located or applied within the cavity structure 112 by any convenient method, such as evaporation or casting, without damaging the electroluminescent material 2〇2. For the purpose of this disclosure, the layer 202A can be regarded as a part of the electroluminescent material 202. Then apply a thick layer of 106 transparent dielectric material, such as low-temperature plasma enhanced chemical vapor deposition (PECVD) applied with 02, silicon nitride, or a transparent perfluoropolymer (eg Tefl〇n_af ), As the cover of the cavity structure 112, by controlling the thickness of the upper end of the cavity structure 112 or the opening β layer 106 to be controlled so that the cavity structure 112 is just filled up to the height of the dielectric medium 103. The photoresist layer 105 is removed to complete the first pixel in the pixel that emits the first color (red in this particular embodiment). Please refer to FIG. 3, which illustrates the structure of a second sub-pixel. Roughly as described above, a layer of 107 photoresist # is spin-coated on the first pixel and the dielectric medium 103, and is patterned and developed. Dielectric medium that has been exposed (please read the notes on the back before filling this page)-Pack. Threading •-I — II I 1 11-^ Paper size is applicable to China National Standard (CNS) Α4 specification (210Χ297 Director A7 B7 V. Description of the invention (9 103 Then make a pattern to design a second cavity structure or structures 113 close to the first pixel. Apply a kind of luminescent medium 203 to the cavity structure ι13 and many conductive strips! 〇i's single-conductive strips have a covering relationship. As explained in conjunction with the electroluminescent medium 202, the electroluminescent medium 2Q3 usually consists of a layer of sub-transmissive material 'a layer can emit a second color of active emission It consists of a bulk material and a layer of hole transfer material. Then a layer of 203 A transparent conductive material is applied as the second electrode (for example, cathode). Layer 203A can be used by any convenient method: such as evaporation or casting, located in or applied to the cavity In the structure H3, it is not bad for the private, luminescent material 203. For the purpose of this disclosure, the layer 2〇3A can be regarded as a part of the electroluminescent material 203. Then: a thick layer 108 of transparent dielectric is then applied Materials, such as low temperature PEC The VD is coated with 02, nitrided, or a transparent perfluoropolymer (such as Teflon AF) as a cover for the cavity structure, thereby sealing the upper end of the cavity structure 113 or the open beta layer The thickness of 108 is controlled so that the cavity structure 113 just fills up to the height of the dielectric medium 103. After removing the photoresist layer 107 ′, the second color can be emitted in the center of the pixel (in this specific embodiment The structure of the first pixel in green). Please refer to FIG. 4 to illustrate the composition of a third pixel. Roughly as described above, a layer of 1 09 photoresist is spin-coated on the first and second pixels And the dielectric medium 103, and patterned and developed. The exposed dielectric medium 103 is then patterned to form a third cavity structure or structures 114 close to the first and second sub-pixels. The electroluminescent medium 204 is laid on the cavity structure 114 and has a covering relationship with a single conductive strip of many conductive strips 101. As explained in conjunction with the electroluminescent media 2〇2 and 2〇3, the electroluminescent medium -12- This paper music scale is suitable for China National Standard (CNS) A4 specification (210Χ297 I¾ ------ iT ------- 10 - - · ·: (Please read the notes on the back of this page to fill out) II __ - - _ Economic Affairs Central Office staff standard Falcon consumer cooperatives and India all-rounder

貫204通常由 經濟部中央標準扃貞工消费合作社印裝 々电子傳遞材料,一屉鈐鉻山楚 活性發射體材料,及…:二“發出弟二色彩之 層$傳材料構成。錢敷著一 =4A透月導电材科作爲第二電極(例如 可藉任何方便方法,#技+ ^ Ζϋ4Α 诸如崧發或鑄塑,位於或敷著於腔结 構114内,而不損壞電 、 双贫元材料2〇4。爲此項目的,屉 2〇4Α可視爲電致發光材料204之—部份。 滑 厚層110之透明電介質材料,諸如藉低溫 邱㈣所敷者〈叫,氮切,或-種透明全氟聚合物( 例如TefI〇n_AF) ’作爲供腔結構π4之蓋,藉以密^腔社 構m(上端或開σ。層11G之厚度予.以控制,以.便腔 114格好填滿至電介媒皙夕古洛 , 、.°構 I媒κ 1 03炙问度。脫除光敏抗蝕劑層 1〇9、,.以完成像素中能發出第三色彩(在此特定實施例爲藍 色)之第三次像素之構造。 圖5中例示能發三原色之整個像素。脱除最後之光敏抗 蝕劑層109後,然後通常藉金屬條(未示)接觸靠近諸列末 端之透明導電條202A,203A,及204A,將諸次像素連接 。知覆蓋層之敷著金屬以平版印刷方式作成圖案,或將 金屬敷著於抗蝕劑掩蓋之圖案上,後隨脱除過程,可藉以 形成金屬條。 圖ό爲一有機LED陣列之平面圖,部份剖開以例示三不 同製造階段。在圖6中由左開始南右,—區域丨2丨例示 LED陣列在作成圖案之導電條ι〇1已形成在半導體基片 100上之階段。圖6中之中央區域122例示能發出三色彩( 在此實施例爲紅,綠及藍原色之電致發光媒質2〇2,2〇3 請 先 聞 背 面 之 注 意 事 項 再 旁 裝 訂 線 ____- 13- 本紙張尺度適用中國國家榇準(CNS ) A4規格(210X297公釐)Guan 204 is usually composed of electronic transmission materials printed by the Central Standards Ministry of Economic Affairs Consumer Cooperative, printed materials of a single drawer, chromium chromium, and active emitters, and ... One = 4A translucent conductive material as the second electrode (for example, can be borrowed by any convenient method, # 技 + ^ Zϋ4Α such as Songfa or casting, located or laid in the cavity structure 114, without damaging electricity, double poverty Metamaterial 2〇4. For this project, the drawer 2〇4Α can be regarded as part of the electroluminescent material 204. The transparent dielectric material of the sliding thick layer 110, such as those applied by low temperature Qiu ㈣ called, nitrogen cut, Or a kind of transparent perfluoropolymer (such as TefI〇n_AF) as a cover for the cavity structure π4, with a dense cavity structure m (upper or open σ. The thickness of the layer 11G is to be controlled to the toilet cavity 114 The grid is filled up to the dielectric medium Xiguluo,.. ° structure I medium κ 1 03 hot degree. Remove the photoresist layer 109, .. to complete the pixel can emit a third color (here The specific embodiment is the structure of the third sub-pixel of blue). The entire pixel capable of emitting three primary colors is illustrated in FIG. 5. After removing the last photoresist layer 109, the transparent pixels 202A, 203A, and 204A near the ends of the columns are usually contacted by a metal strip (not shown) to connect the sub-pixels. It is known that the cover layer is coated with metal Create a pattern by lithography, or apply a metal to a pattern covered by a resist, and then follow the removal process to form a metal strip. Figure ό is a plan view of an organic LED array, partially cut away to illustrate three different Manufacturing stage. Starting from left to right in FIG. 6, the region 丨 2 丨 illustrates the stage where the patterned conductive strip ι〇1 has been formed on the semiconductor substrate 100. The central region 122 in FIG. 6 illustrates Three colors (in this example, red, green and blue electroluminescent mediums 2〇2, 2〇3 Please read the notes on the back before binding the binding line ____- 13- This paper size is applicable to the Chinese national standard Standard (CNS) A4 specification (210X297mm)

經濟部中央標準局貝工消費合作社印製 及204之·個別次像素已分別敷著於腔結構丨丨2,i〗3及! ^ 4 之階段。雖然諸次像素例示爲個別方格(凹穴),但請瞭解 ,整個腔結構可包含電致發光材料,並且只有電極ι〇ι與 202A,203A,或204A間之電致發光材料將予活化。 區域123例示在透明導電條202A,2〇3八,及2〇4八之陣 列已敷著於腔結構112, 113,及114。在此實施例,透明 導電條202A ’ 203A,及204A延伸腔結構112,1 13,及 11 4又長度,至基片i 〇〇之邊緣,以方便將所有像素之次 像素連接於數列(或數行)作爲陽極電極。精於此項i藝者 田然將會瞭解.,可利用很多其他方法將透明導.電條2〇2A 2〇jA,及204A連接成數列或數行,但所説明之方法通 4最爲方便’並且保持各腔結構之密封。 π特別參照圖7,例示根據本發明之整個LED陣列之簡 化頂視,面圖。特別是,導電條101之末端例示爲連接至 仃驅動器225 ’其形成於基片100上作爲CMOS驅動器。外 π連接墊片226位於基片100之邊緣,供連接至另外之外 部%路。同樣’透明導電條202Α,203Α,及204Α例示爲 連接至列驅動器230,其形成於基片100上作爲CMOS驅動 谷。外部連接片231位於基片1 〇认之邊緣’供連接至另外 之外部包路。因爲依所用之特定型式之驅動,定址等而定 ’可利用種類眾多之特定驅動電路,故驅動器225及230 之特定細節未予例示。 雖…:以上之腔結構11 2,1 1 3及1 1 4經示爲溝道,但請瞭 解’除了溝道結構之定向較佳爲垂直於並越過所有導電 請 先 閱 讀 背 之 注 意 事 項 再 裝 订 線Printed by the Beigong Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs and 204 of the individual sub-pixels have been applied to the cavity structure respectively, i, 2, 3 and 3! ^ 4 stages. Although the sub-pixels are illustrated as individual squares (cavities), please understand that the entire cavity structure may contain electroluminescent materials, and only the electroluminescent material between the electrode ι〇ι and 202A, 203A, or 204A will be activated . The area 123 is exemplified by the array of transparent conductive strips 202A, 202, and 204, which have been applied to the cavity structures 112, 113, and 114. In this embodiment, the transparent conductive strips 202A ′ 203A, and 204A extend the cavity structures 112, 113, and 114 to the length to the edge of the substrate i 〇〇, so as to facilitate the connection of all pixels of the sub-pixels in the series (or Several rows) as anode electrodes. Tian Ran, who is skilled in this field, will understand that many other methods can be used to connect the transparent conductors. The electrical strips 2〇2A 2〇jA, and 204A are connected into a number of rows or rows, but the method described is the most common. Convenient 'and keep the seal of each cavity structure. [pi] With particular reference to FIG. 7, a simplified top view, plan view of the entire LED array according to the present invention is illustrated. In particular, the end of the conductive bar 101 is exemplified as being connected to the driver 225 'which is formed on the substrate 100 as a CMOS driver. The outer π connection pad 226 is located at the edge of the substrate 100 for connection to another outer path. Similarly, the transparent conductive stripes 202A, 203A, and 204A are exemplified as being connected to the column driver 230, which is formed on the substrate 100 as a CMOS driving valley. The external connection piece 231 is located at the recognized edge of the substrate 10 for connection to another external package path. Because it depends on the specific type of drive used, addressing, etc., many types of specific drive circuits can be used, so the specific details of the drivers 225 and 230 are not illustrated. Although ...: The above cavity structure 11 2, 1 1 3 and 1 1 4 are shown as channels, but please understand that 'except for the channel structure, the orientation is preferably perpendicular to and across all conductive, please read the notes before back Gutter

-14- ( 210x297公楚)-14- (210x297 Gongchu)

S1836S A7 B7 12 •— 五、發明説明( ιυι 似方式製定址㈣外,可按相 二像顯示應用所需之像素數及次像素間距 女,丨、 寬又,係依特定應用所需要之顯示解析度及 音之2 H3 4對角,線彩色VGA型顯示器,滿 二= 斤度需要最少640 x 480像素,各有三次像素,以 技術、阳間距小於01毫米。.像素間距僅受限於平版印刷 技k限制’其在目前之製造技術約狀5微.米。. 在此實施例所揭示之陣列,具有優於先前技藝所“任 :::歹;广固有優越穩定性。每-次像素(凹穴結挺)或次像 構道結構)中之有機電致發光媒質,均在凹穴或溝道 • : 2被第一電極’在側面被電介媒質及在頂部被透明 % ’丨貝盍所包圍。所揭示之腔結構顯著減低顯示元件之環 境(氧及濕氣)衰變。 鲤濟部中央榡準局員工消費合作社印製 t本發明所揭示之陣列用作電致發光媒質之材料,可取 ^技π所揭示有機EL裝置之任何形式。電致發光媒質 通常由-層電子傳遞材料,一層活性發射體,及一層孔傳 遞材料所構成可使用有機物,金屬有機化合物,聚合物 2此等材料之任何组合,作爲孔傳遞材料,活性發射體及 %子傳遞材料。當然請予瞭解,在有些特殊應用,可免除 孔傳遞材料及電子傳遞材料之任何一種,或二者均予免除 ’不過這通常會導致不良之光發射。 要達成三原色發射,亦即紅,綠及藍色,可利用將會在 像素產生所希望色彩發射之三不同活性發射體。在每一活 -------15·S1836S A7 B7 12 • — V. Description of the invention (outside the address in a similar way, it can display the number of pixels and sub-pixel spacing required by the two-image display application, the width, and the display required for specific applications Resolution and tone of 2 H3 4 diagonal, line color VGA type display, full 2 = minimum resolution of 640 x 480 pixels, each with three pixels, technically, positive pitch less than 01 mm. Pixel pitch is only limited by Lithography technology limits its current manufacturing technology to approximately 5 micrometers. The array disclosed in this embodiment has inherent superior stability that is superior to the previous art institute "Ren :: Xin; Guang; each- The organic electroluminescent medium in the sub-pixel (concave cavity stiffening) or sub-image channel structure) is in the concave cavity or channel •: 2 by the first electrode 'on the side by the dielectric medium and transparent at the top% Surrounded by Beiyu. The disclosed cavity structure significantly reduces the decay of the display element's environment (oxygen and moisture). Printed by the Employee Consumer Cooperative of the Central Bureau of Prefectural Affairs of the Ministry of Carriage and Industry t The array disclosed in this invention is used for electroluminescence The material of the medium can be organic Any form of EL device. The electroluminescent medium is usually composed of a layer of electron transport material, a layer of active emitter, and a layer of pore transport material. Any combination of organic materials, metal organic compounds, polymer 2 and other materials can be used as pores Transmission materials, active emitters, and sub-transmission materials. Of course, please understand that in some special applications, it is possible to exempt any one of hole transmission materials and electron transmission materials, or both of them. However, this usually leads to undesirable light. Emission. To achieve three primary color emissions, namely red, green, and blue, use three different active emitters that will produce the desired color emission in the pixel. In each activity ------- 15 ·

本紙杀尺度適财g國家轉(CNS ) ( 2丨Qx297公楚V B7 五、發明説明(D ) 性發射體層,也可包括有— 素中每-個別色彩之發射效率=劑: 達成三原色發射,有三次像素作爲主發射體。要 ^發餐一―,人像素然後分別以三種能夠紅,綠及 摻’it::㈣螢光染料之輔助捧雜物予以捧雜。輔助 =;用一發射體,而主發一 -種受激能量 。使用聚I:::’ ’ I眞空蒸發敷著有機電致發Ϊ媒質 W親嵌’ .,其也可藉其他技術諸如注射填^,旋 Π 或自適當溶液用刮片刮敷予以敷著。在構 τ昇華材料及聚合物所組成之異質結構陣列之 形,可能需要上述種種技術之混合。 操作_自LED P車列之頂面可看見來自LED陣列之 發射圖案。將電子驅動器225及23〇設定程式,其順序一 ^將-行次像素定址,並以—種致使同—行重複定址間之 時間間隔少於人g良> I & 、 覺,τ、極限(一般爲少於1 / 6 0秒)之速 :' 1 &疋址;n序’藉以驅動led陣列發光。雖然該裝置 經濟部中央標準局員工消費合作社印製 在任何瞬間僅自-行發射’但人眼看見由來自所有經定址 I諸行之光發射所形成之影像。、 將每-像素之次像素组合定址,藉以產生影像之彩色, 大致如下: _ (1) 將一次像素定址發出紅色光; (2) 將一次像素定址發出、綠色光; (3) 將一次像素定址發出藍色光; 本紐尺度This paper kills the standard and adapts to the country (CNS) (2 丨 Qx297 Gongchu V B7 V. Description of the invention (D) The sex emitter layer can also include the emission efficiency of each individual color in the element = agent: Achieve three primary color emission , There are three pixels as the main emitter. To make a meal, the human pixel is then mixed with three kinds of auxiliary substances that can be red, green and doped with 'it :: (iv) fluorescent dyes. Auxiliary =; use one The emitter emits a kind of stimulated energy. It uses poly I ::: 'I evaporate and apply organic electroluminescence medium Ϊ medium to embed it. It can also be filled by other techniques such as injection filling, spin Π or apply it from a suitable solution with a scraper. The shape of the heterostructure array composed of sublimation materials and polymers may require a mixture of the above technologies. Operation_From the top surface of the LED P train See the emission pattern from the LED array. Set the electronic drivers 225 and 203 to the program in the order of addressing the -line sub-pixels, and the time interval between repeated addressing in the same line will be less than the number of people. I & Sense, τ, limit (generally less than 1/60 seconds Speed: '1 &address; n order' to drive the LED array to emit light. Although the device is printed by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs at any instant, only the self-launching is launched, but the human eye sees from all the addresses. I The image formed by the light emission of various lines., The sub-pixel combination of each pixel is addressed to generate the color of the image, which is roughly as follows: _ (1) Address the primary pixels to emit red light; (2) Address the primary pixels Emit green light; (3) Address the primary pixels to emit blue light;

五、發明説明(14 ) 318966 (4)將二發射紅及綠色之次像素同時定址,以產生黃色 之感覺; (5 )將二發射紅及藍色之次像素同時定址,以產生紫色 之感覺; ' (6 )將二發射藍及綠色之次像素同時定址,以產生藍色 之感覺; (7 )將所有次像素同時定址,以產生白色光;以及 (8 )將所有次像素均不定址,以產生黑色光.。 應该強、調的是’在本發明所揭示之能夠全色彩之有機 LED陣列心製法,也適用於製造供單色或多.色(全色彩以 2)影像之陣列。在像素選擇單色或多色電致發光媒質, 藉以上所揭示之相同方法,可製成供單色或多色影像顯示 應用之陣列。 因此,本案揭示一種供影像顯示器之全色彩有機LED陣 歹J及其製法。雖然發明人業已圖示及説明本發明之特定實 施例,但精於此項技藝者將會想出另外種種修改及改進。 因此祈請瞭解,本發明不限於所示之特定形式,發明人並 意圖在後附之申請專利範圍包括不偏離本發明之精神及範 圍之所有種種修改。 -17 I--------餐------IT—----- .- ·--·· (請先閔讀背面之注意事項再填t本頁). _______ I I — 經濟部中央標準局員工消費合作社印製5. Description of the invention (14) 318966 (4) Simultaneous addressing of the second red and green sub-pixels to produce a yellow feeling; (5) Simultaneous addressing of the second red and blue sub-pixels to produce a purple feeling ; (6) Addressing two sub-pixels emitting blue and green at the same time to produce a blue feeling; (7) Addressing all sub-pixels simultaneously to produce white light; and (8) Unaddressing all sub-pixels To produce black light. It should be emphasized that the organic LED array manufacturing method disclosed in the present invention, which can be full-color, is also suitable for manufacturing arrays for monochromatic or multi-color (full-color 2) images. Select monochromatic or multicolor electroluminescent media in the pixels. By the same method as disclosed above, an array can be made for monochromatic or multicolor image display applications. Therefore, this case discloses a full-color organic LED array for image display and its manufacturing method. Although the inventor has illustrated and described specific embodiments of the present invention, those skilled in the art will come up with various modifications and improvements. Therefore, I wish to understand that the present invention is not limited to the specific form shown, and the inventor intends to include in the appended patent application scope all modifications that do not deviate from the spirit and scope of the present invention. -17 I -------- Meal ------ IT ------- .- ·-·· (Please read the notes on the back first and then fill out this page). _______ II — Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs

Claims (1)

A8 B8 C8 D8 經濟部中央標準局員工消費合作社印製 申請專利範圍 1. -種全色彩發光二極體陣列,包含: 「半導體基片有一平面表面; 1橫t間開〈導電條成行排列於丰導體表面,而半導 «豆表面I數部份在其間露出; ,%介媒質敷著於導電條及半導體表面之數部份; 次:;=由電介媒質所界定,並且每-腔結構界定- …腔結構位於數行與許多導電條成覆蓋關係 佶專1:別腔結構位於與一關碍導電條成覆蓋關係,俾 :使導電斧之—部份露出; 〜 一二種電致發光媒質,各包括至少—層活性發光體材料及 道+透明導電材料橫向交替在腔結構敷著於露出之關聯 導電條’而每—個別行中之所有腔結構僅包含三種電致 發光媒質之一種,透明導電材料連接爲形成許多橫向間 開平行之金屬條排列於數列與導電條正交;以及 一種透明電介質材料位於密封貼合於腔結構上。 2. —種製造彩色有機發光二極體陣列之方法,包冬下列步 驟: ° 提供一比較扁平,有—平面表面之半導體基片; 在半導體基片之平面表面形成一層導電材料,將該層導 電材料作成圖案,成爲許多橫向間開之導電條,而基片 之數部份在其間露出; - 將一層電介媒質敷著今導電條及基片之數部份上面; 將一層光敏抗蝕劑敷著在電介媒質上面; 將該層光敏抗蝕劑作成圖案,以使電介媒質之數部份露 -18 本紙張尺度關家縣(CNS ) A4^ ( 21〇&gt;&lt;297公|丨 裝 :.訂— ----線 I---1 (請先閱讀背面之注意事項再填寫本育) ---- ----- 318966 A8 bs C8 D8 經濟部中央標準局員工消費合作社印製 '申請專利範圍 出; 導質之露出部份,以界定橫向間開之腔結構與 導电條成覆蓋關係,每一腔結構使—關聯 份露出; 俅足一部 ^在腔結構内敷著—種電致發光媒質,包括至少 爲供發出選定色彩之活性發射體材料,及—層導、 射材料,該導電光透射材料在腔結構内形成—電ς觸點 在每r腔結構敷著一層光透射電介質材料於導電邊 材料,將腔結構密封;以及. .'屯尤处射 :脱除光敏抗㈣層,以完成—組構造爲發 像素。 文巴心&lt; 3·-種製造彩色有機發光二極體陣列之方法,包 骤: W 提供一比較扁平,有—平面表面之半導體基片; 在半導體基片之上表面形成一層導電材料,將該層導電 材料作成圖案,成爲許多橫向間開之導電條,而基片Z 數部份在其間露出; 將一層電介媒質敷著在導電僚及基片之數部份上面; 將第一層光敏抗蚀劑敷著在電介媒質上面; 將第層光敏抗蚀劑作成圖案,以使電介媒質之諸第— 部份露出; 蝕刻電介媒質I露出諸第—部份,以界定第一组橫向間 開之腔結構與導電條成覆蓋關係,每一腔結構使一關聯 -19- 本紙乐尺度適用中國^^準(CNS ) A4規格(27〇^7^ (請先閲讀背面之注意事項再填寫本頁j .裝_ 今 A8 A8 經濟部中央標準局員工消費合作社印製 318966 D8 六、申請專利範圍 導電條之一部份露出; 在第一組腔結構内敷著第一種電致發光媒質,包括至少 一層選擇爲發出第一色彩之活性發射體材料,及一層光 透射導電材料,該光透射導電材料形成一與第一組腔結 構之電接觸點; 在第一组腔結構之每一腔結構敷著一層光透射電介質材 料,將第一組腔結構密封; -脱除第一層光敏抗蚀劑,以冗成第一紐·構造爲琶出第一-色彩之次像素; 將第二層光敏抗蚀劑敷著在_電介媒質上面; 將第二層光敏抗蚀劑作成圖案,以使電介媒質之諸第二 部份露出; 蝕刻電介媒質之露出諸第二部份,以界定第二組橫向間 開之腔結構與導電條成覆蓋關係,每一腔結構使一關聯 導電條之一部份露出; 在第二組腔結構内敷著第二種電致發光媒質,包括至少 一層選擇爲供發出第二色彩之活性發射體材料,及一層 光透射導電材料,該光透射導電材料形成一與第二組腔 結構之電接觸點; 〜 在第二組腔結構之每一腔結構敷著一層光透射電介質材-料,將第二組腔結構密封;〜 脱除第二層光敏抗蚀劑層,以完成第二組構造爲發出第 、 - . 二色彩之次像素。 -20- 本纸張尺度適用卡國國家標準(CNS ) A4規格(210X297公釐) ---------I------、玎------一線 :·▲··: ' - . · (請先閲讀背面之注意事項再填寫本頁) ___&lt; -A8 B8 C8 D8 Printed and patented by the Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 1. A variety of full-color light-emitting diode arrays, including: "Semiconductor substrate has a flat surface; 1 horizontal t open <conducting strips are arranged in rows in Abundant conductor surface, and the semi-conducting «bean surface I number part is exposed between them;,% dielectric is coated on the conductive strip and the semiconductor surface part; times :; = is defined by the dielectric medium, and each cavity Structural definition-… The cavity structure is located in several rows and has a covering relationship with many conductive strips. Special 1: The other cavity structure is located in a covering relationship with a conductive strip, so as to: expose part of the conductive axe; ~ one or two kinds of electricity Luminescent media, each consisting of at least one layer of active luminescent material and channels + transparent conductive material alternately laterally applied to the exposed associated conductive strips in the cavity structure, and all cavity structures in each individual row contain only three electroluminescent media One is that the transparent conductive material is connected to form a plurality of horizontally spaced parallel metal strips arranged in several rows and are orthogonal to the conductive strips; and a transparent dielectric material is located in the seal and is attached to the cavity junction 2. A method for manufacturing a color organic light-emitting diode array, including the following steps: ° Provide a relatively flat semiconductor substrate with a flat surface; form a layer of conductive material on the flat surface of the semiconductor substrate, This layer of conductive material is patterned into many horizontally spaced conductive strips, and several parts of the substrate are exposed between them;-A layer of dielectric medium is applied on top of the current conductive strips and several parts of the substrate; The photoresist is applied on the dielectric medium; the layer of the photoresist is patterned so that several parts of the dielectric medium are exposed -18 paper size Guanjia County (CNS) A4 ^ (21〇 &gt; &lt; 297 public | 丨 Package :. Order — ---- Line I --- 1 (please read the notes on the back before filling in this education) ---- ----- 318966 A8 bs C8 D8 Ministry of Economic Affairs Printed by the Central Bureau of Standards 'Staff Consumer Cooperatives' patent application scope; the exposed part of the conductive material is used to define the horizontally spaced cavity structure and the conductive strip to form a covering relationship, and each cavity structure exposes the relevant part; Part ^ is coated with a kind of electroluminescent medium in the cavity structure, Including at least the active emitter material for emitting the selected color, and-layer conducting and radiating materials, the conductive light-transmitting material is formed in the cavity structure-the electrical contacts are coated with a layer of light-transmitting dielectric material in each r cavity structure to conduct electricity Edge material to seal the cavity structure; and ... 'Tunyou shot: removing the photosensitive anti-layer, to complete the group structure as a pixel. Wen Baxin &lt; 3 · -manufacturing color organic light-emitting diode array The method includes steps: W provides a relatively flat semiconductor substrate with a flat surface; a layer of conductive material is formed on the upper surface of the semiconductor substrate, and the layer of conductive material is patterned into a plurality of horizontally spaced conductive stripes, The Z part of the substrate is exposed therebetween; apply a layer of dielectric medium on top of the conductive member and the substrate; apply the first layer of photoresist on the dielectric medium; apply the photosensitive layer The resist is patterned to expose the first parts of the dielectric medium; the dielectric medium I is etched to expose the first parts to define the first group of laterally spaced cavity structures to cover the conductive strips, each The cavity structure makes a connection -19- This paper music standard is applicable to the Chinese ^^ quasi (CNS) A4 specification (27〇 ^ 7 ^ (please read the precautions on the back and then fill out this page j. 装 _ 今 A8 A8 Central Standards of the Ministry of Economic Affairs 318966 D8 printed by the Bureau ’s Consumer Cooperatives 6. Part of the conductive strip applied for is exposed; the first electroluminescent medium is deposited in the first cavity structure, including at least one active emission layer selected to emit the first color Bulk material, and a layer of light-transmitting conductive material, the light-transmitting conductive material forms an electrical contact point with the first group of cavity structures; each cavity structure of the first group of cavity structures is covered with a layer of light-transmitting dielectric material, the first Sealing of the cavity structure; -Removing the first layer of photoresist to form the first button and constructing the first-color sub-pixels; Applying the second layer of photoresist on _dielectric medium Above; pattern the second layer of photoresist to expose the second portions of the dielectric medium; etch the exposed second portions of the dielectric medium to define the second set of laterally spaced cavity structures and Conductive strip into cover Each cavity structure exposes a part of an associated conductive strip; the second group of cavity structures is coated with a second electroluminescent medium, including at least one layer of active emitter material selected to emit a second color, And a layer of light-transmitting conductive material, the light-transmitting conductive material forms an electrical contact point with the second group of cavity structures; ~ each cavity structure of the second group of cavity structures is covered with a layer of light-transmitting dielectric material-material, the second The group cavity structure is sealed; ~ Remove the second photoresist layer to complete the second group structure to emit the second pixel of the second color. -20- This paper scale is applicable to Card National Standard (CNS) A4 specification (210X297mm) --------- I ------ 、 玎 ------ First line: ▲ ··: '-. · (Please read the precautions on the back before filling out this page) ___ &lt;-
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Families Citing this family (49)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0890832A (en) * 1994-09-27 1996-04-09 Oki Electric Ind Co Ltd Light emitting element array and optical head
US6395328B1 (en) * 1996-04-10 2002-05-28 Cambridge Display Technology Limited Organic light emitting diode color display
EP0903965B1 (en) * 1996-05-15 2003-07-30 Chemipro Kasei Kaisha, Limited Multicolor organic el element, method for manufacturing the same, and display using the same
JP3928823B2 (en) * 1997-05-09 2007-06-13 パイオニア株式会社 Light emitting display panel, method for manufacturing the same, and mask for manufacturing the second electrode
WO1998059382A1 (en) * 1997-06-23 1998-12-30 Fed Corporation Voltage controlled color organic light emitting device and method of producing the same
US6069443A (en) * 1997-06-23 2000-05-30 Fed Corporation Passive matrix OLED display
US6198220B1 (en) * 1997-07-11 2001-03-06 Emagin Corporation Sealing structure for organic light emitting devices
EP1021255A1 (en) * 1997-07-11 2000-07-26 Fed Corporation Sealing structure for organic light emitting devices
GB9818092D0 (en) 1998-08-19 1998-10-14 Cambridge Display Tech Ltd Display devices
WO2000015009A1 (en) * 1998-09-02 2000-03-16 Seiko Epson Corporation Light source and display device
EP1116260A1 (en) * 1998-09-04 2001-07-18 Fed Corporation Fabrication method for high resolution full color organic led displays
JP2000113982A (en) * 1998-10-08 2000-04-21 Sony Corp Manufacture of organic el display
GB9907931D0 (en) * 1999-04-07 1999-06-02 Univ Edinburgh An optoelectronic display
DE19916745A1 (en) * 1999-04-13 2000-10-19 Mannesmann Vdo Ag Light-emitting diode with organic light-emitting substances for generating light with mixed colors
US6366017B1 (en) 1999-07-14 2002-04-02 Agilent Technologies, Inc/ Organic light emitting diodes with distributed bragg reflector
TW468283B (en) 1999-10-12 2001-12-11 Semiconductor Energy Lab EL display device and a method of manufacturing the same
TW471011B (en) 1999-10-13 2002-01-01 Semiconductor Energy Lab Thin film forming apparatus
US6392617B1 (en) 1999-10-27 2002-05-21 Agilent Technologies, Inc. Active matrix light emitting diode display
JP2001155850A (en) * 1999-11-26 2001-06-08 Taiyo Yuden Co Ltd Organic light emitting element array
ES2250390T3 (en) 2000-02-16 2006-04-16 Sicpa Holding S.A. PIGMENTS WITH VARIATION OF COLOR DEPENDENT OF THE ANGLE OF OBSERVATION, METHOD OF PREPARATION, USE AND COMPOSITION OF COATING OF SUCH PIGMENTS.
JP2001296819A (en) * 2000-04-17 2001-10-26 Nec Corp Organic thin-film el device and method for manufacturing the same
US6570584B1 (en) * 2000-05-15 2003-05-27 Eastman Kodak Company Broad color gamut display
EP1158775A1 (en) * 2000-05-15 2001-11-28 EASTMAN KODAK COMPANY (a New Jersey corporation) Self-illuminating colour imaging device
JP2002110344A (en) * 2000-09-29 2002-04-12 Tdk Corp Thin film el element and its manufacturing method
KR100370030B1 (en) * 2000-10-06 2003-01-30 엘지전자 주식회사 flat display device and method for the same
GB0024804D0 (en) * 2000-10-10 2000-11-22 Microemissive Displays Ltd An optoelectronic device
TW522752B (en) * 2000-10-20 2003-03-01 Toshiba Corp Self-luminous display panel and method of manufacturing the same
JP2002304136A (en) * 2001-01-17 2002-10-18 Seiko Epson Corp Electronic equipment provided with organic electroluminescence display
GB0104961D0 (en) * 2001-02-28 2001-04-18 Microemissive Displays Ltd An encapsulated electrode
US8289266B2 (en) * 2001-06-11 2012-10-16 Genoa Color Technologies Ltd. Method, device and system for multi-color sequential LCD panel
EP2273480A3 (en) * 2001-06-11 2012-02-22 Genoa Color Technologies Ltd. Device, system and method for color display
US7714824B2 (en) * 2001-06-11 2010-05-11 Genoa Color Technologies Ltd. Multi-primary display with spectrally adapted back-illumination
WO2003058587A2 (en) * 2002-01-07 2003-07-17 Genoa Technologies Ltd. Electronic color display for soft proofing
JP4799823B2 (en) * 2002-04-11 2011-10-26 ジェノア・カラー・テクノロジーズ・リミテッド Color display apparatus and method for improving attributes
JP5226931B2 (en) * 2002-07-24 2013-07-03 三星ディスプレイ株式會社 High brightness wide color gamut display device and image generation method
JP2006519410A (en) 2003-01-28 2006-08-24 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ Optimal subpixel array for displays with more than 4 primary colors
GB2400483B (en) * 2003-04-09 2006-04-12 One2See Ltd Segmented electroluminescent panel
WO2005013193A2 (en) * 2003-08-04 2005-02-10 Genoa Color Technologies Ltd. Multi-primary color display
WO2007060672A2 (en) * 2005-11-28 2007-05-31 Genoa Color Technologies Ltd. Sub-pixel rendering of a multiprimary image
US8835941B2 (en) 2006-02-09 2014-09-16 Qd Vision, Inc. Displays including semiconductor nanocrystals and methods of making same
WO2007143197A2 (en) * 2006-06-02 2007-12-13 Qd Vision, Inc. Light-emitting devices and displays with improved performance
US9525148B2 (en) 2008-04-03 2016-12-20 Qd Vision, Inc. Device including quantum dots
WO2009123763A2 (en) 2008-04-03 2009-10-08 Qd Vision, Inc. Light-emitting device including quantum dots
DE102009018111A1 (en) * 2009-04-20 2010-10-28 Airbus Deutschland Gmbh Easy to configure multifunction module for a passenger supply channel
CN101984487B (en) * 2010-11-02 2013-05-22 友达光电股份有限公司 Method for driving active matrix organic light-emitting diode (LED) display panel
US8574934B2 (en) * 2011-09-19 2013-11-05 The Regents Of The University Of Michigan OVJP patterning of electronic devices
US10191360B2 (en) * 2016-12-30 2019-01-29 Hong Kong Beida Jade Bird Display Limited Microarray LED flash
WO2018216330A1 (en) * 2017-05-25 2018-11-29 ソニーセミコンダクタソリューションズ株式会社 Optical head, optical head scanning device, and method for driving same
KR102606282B1 (en) 2017-06-19 2023-11-27 삼성디스플레이 주식회사 Display device

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3766447A (en) * 1971-10-20 1973-10-16 Harris Intertype Corp Heteroepitaxial structure
US4015166A (en) * 1972-09-06 1977-03-29 Matsushita Electric Industrial Co., Ltd. X-Y matrix type electroluminescent display panel
US4720432A (en) * 1987-02-11 1988-01-19 Eastman Kodak Company Electroluminescent device with organic luminescent medium
JPH0266873A (en) 1988-06-27 1990-03-06 Eastman Kodak Co Electric field light emitting device
JPH02244673A (en) * 1989-03-16 1990-09-28 Olympus Optical Co Ltd Electronic element using organic semiconductor and manufacture thereof
JP2911552B2 (en) * 1990-06-18 1999-06-23 パイオニア株式会社 Organic electroluminescent device and method of manufacturing the same
US5276380A (en) * 1991-12-30 1994-01-04 Eastman Kodak Company Organic electroluminescent image display device
JP3451291B2 (en) * 1993-11-25 2003-09-29 カシオ計算機株式会社 Electroluminescent device and manufacturing method thereof
US5663573A (en) * 1995-03-17 1997-09-02 The Ohio State University Bipolar electroluminescent device
US5587589A (en) * 1995-03-22 1996-12-24 Motorola Two dimensional organic light emitting diode array for high density information image manifestation apparatus

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