TW315506B - - Google Patents

Info

Publication number

TW315506B

TW315506B TW085107601A TW85107601A TW315506B TW 315506 B TW315506 B TW 315506B TW 085107601 A TW085107601 A TW 085107601A TW 85107601 A TW85107601 A TW 85107601A TW 315506 B TW315506 B TW 315506B

Authority

TW

Taiwan

Prior art keywords

film

ruthenium oxide

layer

titanium

titanium nitride

Prior art date

1995-06-26

Links

• Espacenet
• Global Dossier
• Discuss

• 239000010408 film Substances 0.000 claims description 229
• 239000004065 semiconductor Substances 0.000 claims description 71
• WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 claims description 62
• 238000000034 method Methods 0.000 claims description 54
• 229910001925 ruthenium oxide Inorganic materials 0.000 claims description 52
• NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims description 47
• 239000003990 capacitor Substances 0.000 claims description 40
• 239000010409 thin film Substances 0.000 claims description 37
• 239000010936 titanium Substances 0.000 claims description 36
• 229910052719 titanium Inorganic materials 0.000 claims description 32
• RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 29
• 238000004519 manufacturing process Methods 0.000 claims description 27
• 239000000758 substrate Substances 0.000 claims description 27
• 239000011521 glass Substances 0.000 claims description 20
• 239000007789 gas Substances 0.000 claims description 18
• 238000005530 etching Methods 0.000 claims description 17
• 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 15
• 229920005591 polysilicon Polymers 0.000 claims description 15
• KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 claims description 12
• 229910052707 ruthenium Inorganic materials 0.000 claims description 12
• 239000012535 impurity Substances 0.000 claims description 11
• QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
• 239000001301 oxygen Substances 0.000 claims description 9
• 229910052760 oxygen Inorganic materials 0.000 claims description 9
• WQJQOUPTWCFRMM-UHFFFAOYSA-N tungsten disilicide Chemical compound [Si]#[W]#[Si] WQJQOUPTWCFRMM-UHFFFAOYSA-N 0.000 claims description 9
• 229910021342 tungsten silicide Inorganic materials 0.000 claims description 9
• XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
• 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 6
• 230000015572 biosynthetic process Effects 0.000 claims description 5
• 239000002994 raw material Substances 0.000 claims description 4
• 229910052786 argon Inorganic materials 0.000 claims description 3
• NKZSPGSOXYXWQA-UHFFFAOYSA-N dioxido(oxo)titanium;lead(2+) Chemical compound [Pb+2].[O-][Ti]([O-])=O NKZSPGSOXYXWQA-UHFFFAOYSA-N 0.000 claims description 3
• 238000001020 plasma etching Methods 0.000 claims description 3
• -1 CHF3 / CF4 Chemical class 0.000 claims description 2
• XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 claims description 2
• 238000000137 annealing Methods 0.000 claims description 2
• 239000002699 waste material Substances 0.000 claims description 2
• XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
• PCTMTFRHKVHKIS-BMFZQQSSSA-N (1s,3r,4e,6e,8e,10e,12e,14e,16e,18s,19r,20r,21s,25r,27r,30r,31r,33s,35r,37s,38r)-3-[(2r,3s,4s,5s,6r)-4-amino-3,5-dihydroxy-6-methyloxan-2-yl]oxy-19,25,27,30,31,33,35,37-octahydroxy-18,20,21-trimethyl-23-oxo-22,39-dioxabicyclo[33.3.1]nonatriaconta-4,6,8,10 Chemical compound C1C=C2C[C@@H](OS(O)(=O)=O)CC[C@]2(C)[C@@H]2[C@@H]1[C@@H]1CC[C@H]([C@H](C)CCCC(C)C)[C@@]1(C)CC2.O[C@H]1[C@@H](N)[C@H](O)[C@@H](C)O[C@H]1O[C@H]1/C=C/C=C/C=C/C=C/C=C/C=C/C=C/[C@H](C)[C@@H](O)[C@@H](C)[C@H](C)OC(=O)C[C@H](O)C[C@H](O)CC[C@@H](O)[C@H](O)C[C@H](O)C[C@](O)(C[C@H](O)[C@H]2C(O)=O)O[C@H]2C1 PCTMTFRHKVHKIS-BMFZQQSSSA-N 0.000 claims 2
• 150000001875 compounds Chemical class 0.000 claims 1
• 230000008030 elimination Effects 0.000 claims 1
• 238000003379 elimination reaction Methods 0.000 claims 1
• HFGPZNIAWCZYJU-UHFFFAOYSA-N lead zirconate titanate Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ti+4].[Zr+4].[Pb+2] HFGPZNIAWCZYJU-UHFFFAOYSA-N 0.000 claims 1
• 229910052451 lead zirconate titanate Inorganic materials 0.000 claims 1
• 238000002360 preparation method Methods 0.000 claims 1
• 229920002120 photoresistant polymer Polymers 0.000 description 9
• 238000005229 chemical vapour deposition Methods 0.000 description 6
• 238000000151 deposition Methods 0.000 description 6
• 238000009413 insulation Methods 0.000 description 6
• 229920000642 polymer Polymers 0.000 description 6
• 238000003860 storage Methods 0.000 description 5
• 238000005516 engineering process Methods 0.000 description 4
• 230000010354 integration Effects 0.000 description 4
• 150000002500 ions Chemical class 0.000 description 4
• 238000005240 physical vapour deposition Methods 0.000 description 4
• XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 3
• 239000002131 composite material Substances 0.000 description 3
• 239000003989 dielectric material Substances 0.000 description 3
• 239000011810 insulating material Substances 0.000 description 3
• BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 3
• 229910052710 silicon Inorganic materials 0.000 description 3
• 239000010703 silicon Substances 0.000 description 3
• 238000005979 thermal decomposition reaction Methods 0.000 description 3
• 238000006243 chemical reaction Methods 0.000 description 2
• 238000007796 conventional method Methods 0.000 description 2
• 239000000463 material Substances 0.000 description 2
• 150000002902 organometallic compounds Chemical class 0.000 description 2
• 230000003647 oxidation Effects 0.000 description 2
• 238000007254 oxidation reaction Methods 0.000 description 2
• 125000006850 spacer group Chemical group 0.000 description 2
• 238000004544 sputter deposition Methods 0.000 description 2
• OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 2
• BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
• 229910010066 TiC14 Inorganic materials 0.000 description 1
• GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
• DVOKWRXNWTZRDW-UHFFFAOYSA-N [Ru].[Ru]=O Chemical compound [Ru].[Ru]=O DVOKWRXNWTZRDW-UHFFFAOYSA-N 0.000 description 1
• 238000005234 chemical deposition Methods 0.000 description 1
• 230000002079 cooperative effect Effects 0.000 description 1
• 230000007423 decrease Effects 0.000 description 1
• 230000008021 deposition Effects 0.000 description 1
• 238000009792 diffusion process Methods 0.000 description 1
• 238000010438 heat treatment Methods 0.000 description 1
• 238000005468 ion implantation Methods 0.000 description 1
• YOBAEOGBNPPUQV-UHFFFAOYSA-N iron;trihydrate Chemical compound O.O.O.[Fe].[Fe] YOBAEOGBNPPUQV-UHFFFAOYSA-N 0.000 description 1
• 239000012528 membrane Substances 0.000 description 1
• 229910052697 platinum Inorganic materials 0.000 description 1
• 239000004576 sand Substances 0.000 description 1
• 210000003625 skull Anatomy 0.000 description 1
• 239000000126 substance Substances 0.000 description 1
• 229910052721 tungsten Inorganic materials 0.000 description 1
• 239000010937 tungsten Substances 0.000 description 1
• 238000005406 washing Methods 0.000 description 1