TW312846B - - Google Patents
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- Publication number
- TW312846B TW312846B TW85103214A TW85103214A TW312846B TW 312846 B TW312846 B TW 312846B TW 85103214 A TW85103214 A TW 85103214A TW 85103214 A TW85103214 A TW 85103214A TW 312846 B TW312846 B TW 312846B
- Authority
- TW
- Taiwan
- Prior art keywords
- wiring
- layer
- wiring layer
- circuit
- many
- Prior art date
Links
- 239000010410 layer Substances 0.000 claims description 377
- 239000004065 semiconductor Substances 0.000 claims description 162
- 238000000034 method Methods 0.000 claims description 69
- 239000000758 substrate Substances 0.000 claims description 47
- 229910052751 metal Inorganic materials 0.000 claims description 43
- 239000002184 metal Substances 0.000 claims description 43
- 230000008569 process Effects 0.000 claims description 29
- 239000011229 interlayer Substances 0.000 claims description 26
- 239000013078 crystal Substances 0.000 claims description 16
- 230000015572 biosynthetic process Effects 0.000 claims description 15
- 238000004519 manufacturing process Methods 0.000 claims description 15
- 239000004020 conductor Substances 0.000 claims description 13
- 230000008859 change Effects 0.000 claims description 9
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 238000009826 distribution Methods 0.000 claims description 5
- 238000007639 printing Methods 0.000 claims description 3
- 230000013011 mating Effects 0.000 claims 1
- 239000012535 impurity Substances 0.000 description 15
- 238000013461 design Methods 0.000 description 14
- 238000012545 processing Methods 0.000 description 14
- 238000010586 diagram Methods 0.000 description 10
- 230000001681 protective effect Effects 0.000 description 10
- 230000008054 signal transmission Effects 0.000 description 8
- 230000006870 function Effects 0.000 description 7
- 230000012447 hatching Effects 0.000 description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 6
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 230000004308 accommodation Effects 0.000 description 4
- 230000000694 effects Effects 0.000 description 4
- 230000009467 reduction Effects 0.000 description 4
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 4
- 229910052721 tungsten Inorganic materials 0.000 description 4
- 239000010937 tungsten Substances 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 229910045601 alloy Inorganic materials 0.000 description 3
- 239000000956 alloy Substances 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000002079 cooperative effect Effects 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- 238000004904 shortening Methods 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 2
- 229910052796 boron Inorganic materials 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 238000000605 extraction Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 229910052814 silicon oxide Inorganic materials 0.000 description 2
- 101001053401 Arabidopsis thaliana Acid beta-fructofuranosidase 3, vacuolar Proteins 0.000 description 1
- 229910000881 Cu alloy Inorganic materials 0.000 description 1
- 241000252233 Cyprinus carpio Species 0.000 description 1
- 241000233866 Fungi Species 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 239000013256 coordination polymer Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000011982 device technology Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 125000001475 halogen functional group Chemical group 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000009413 insulation Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000004570 mortar (masonry) Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 239000009719 polyimide resin Substances 0.000 description 1
- 238000000746 purification Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Design And Manufacture Of Integrated Circuits (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP33839895A JP3636523B2 (ja) | 1995-12-26 | 1995-12-26 | 半導体集積回路装置およびその製造方法 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW312846B true TW312846B (en:Method) | 1997-08-11 |
Family
ID=18317791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW85103214A TW312846B (en:Method) | 1995-12-26 | 1996-03-18 |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JP3636523B2 (en:Method) |
| TW (1) | TW312846B (en:Method) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000216264A (ja) | 1999-01-22 | 2000-08-04 | Mitsubishi Electric Corp | Ｃｍｏｓ論理回路素子、半導体装置とその製造方法およびその製造方法において用いる半導体回路設計方法 |
| JP3616611B2 (ja) | 2002-05-14 | 2005-02-02 | 株式会社東芝 | 半導体集積回路装置の設計装置、半導体集積回路の設計方法および半導体集積回路設計プログラム |
-
1995
- 1995-12-26 JP JP33839895A patent/JP3636523B2/ja not_active Expired - Fee Related
-
1996
- 1996-03-18 TW TW85103214A patent/TW312846B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| JPH09181184A (ja) | 1997-07-11 |
| JP3636523B2 (ja) | 2005-04-06 |
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