TW308708B - - Google Patents
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- Publication number
- TW308708B TW308708B TW084104395A TW84104395A TW308708B TW 308708 B TW308708 B TW 308708B TW 084104395 A TW084104395 A TW 084104395A TW 84104395 A TW84104395 A TW 84104395A TW 308708 B TW308708 B TW 308708B
- Authority
- TW
- Taiwan
- Prior art keywords
- ion
- ion implantation
- item
- patent application
- chamber
- Prior art date
Links
- 238000005468 ion implantation Methods 0.000 claims description 436
- 150000002500 ions Chemical class 0.000 claims description 419
- 238000000034 method Methods 0.000 claims description 274
- 238000010884 ion-beam technique Methods 0.000 claims description 197
- 238000012545 processing Methods 0.000 claims description 179
- 239000004065 semiconductor Substances 0.000 claims description 141
- 230000003287 optical effect Effects 0.000 claims description 120
- 230000008569 process Effects 0.000 claims description 115
- 235000012431 wafers Nutrition 0.000 claims description 115
- 238000012546 transfer Methods 0.000 claims description 106
- 239000002019 doping agent Substances 0.000 claims description 105
- 239000000758 substrate Substances 0.000 claims description 96
- 238000011049 filling Methods 0.000 claims description 56
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 36
- 229910052710 silicon Inorganic materials 0.000 claims description 36
- 239000010703 silicon Substances 0.000 claims description 36
- 238000004519 manufacturing process Methods 0.000 claims description 32
- 239000013078 crystal Substances 0.000 claims description 29
- 239000012535 impurity Substances 0.000 claims description 28
- 229910052796 boron Inorganic materials 0.000 claims description 25
- 238000002513 implantation Methods 0.000 claims description 19
- 238000012937 correction Methods 0.000 claims description 18
- 230000009467 reduction Effects 0.000 claims description 18
- 238000000926 separation method Methods 0.000 claims description 17
- 230000000875 corresponding effect Effects 0.000 claims description 15
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 14
- 230000001133 acceleration Effects 0.000 claims description 14
- 238000011161 development Methods 0.000 claims description 13
- 229910052785 arsenic Inorganic materials 0.000 claims description 12
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 claims description 12
- 229910052698 phosphorus Inorganic materials 0.000 claims description 10
- 239000011574 phosphorus Substances 0.000 claims description 10
- 238000009792 diffusion process Methods 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- 229910052790 beryllium Inorganic materials 0.000 claims description 8
- ATBAMAFKBVZNFJ-UHFFFAOYSA-N beryllium atom Chemical compound [Be] ATBAMAFKBVZNFJ-UHFFFAOYSA-N 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 7
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims description 7
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 7
- 230000001678 irradiating effect Effects 0.000 claims description 7
- 229910052749 magnesium Inorganic materials 0.000 claims description 7
- 239000011777 magnesium Substances 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 229910052711 selenium Inorganic materials 0.000 claims description 7
- 239000011669 selenium Substances 0.000 claims description 7
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 6
- 230000002079 cooperative effect Effects 0.000 claims description 6
- 230000033001 locomotion Effects 0.000 claims description 6
- 239000007943 implant Substances 0.000 claims description 5
- 238000002347 injection Methods 0.000 claims description 5
- 239000007924 injection Substances 0.000 claims description 5
- 201000009310 astigmatism Diseases 0.000 claims description 4
- 150000001875 compounds Chemical class 0.000 claims description 4
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 4
- 230000000903 blocking effect Effects 0.000 claims description 3
- 229910001338 liquidmetal Inorganic materials 0.000 claims description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 claims description 2
- 238000012360 testing method Methods 0.000 claims description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 claims 5
- 229910052717 sulfur Inorganic materials 0.000 claims 5
- 239000011593 sulfur Substances 0.000 claims 5
- 210000002784 stomach Anatomy 0.000 claims 4
- 235000000177 Indigofera tinctoria Nutrition 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 229940097275 indigo Drugs 0.000 claims 1
- COHYTHOBJLSHDF-UHFFFAOYSA-N indigo powder Natural products N1C2=CC=CC=C2C(=O)C1=C1C(=O)C2=CC=CC=C2N1 COHYTHOBJLSHDF-UHFFFAOYSA-N 0.000 claims 1
- 239000002574 poison Substances 0.000 claims 1
- 231100000614 poison Toxicity 0.000 claims 1
- 239000010408 film Substances 0.000 description 54
- 238000010586 diagram Methods 0.000 description 24
- -1 phosphorus ions Chemical class 0.000 description 23
- 241000894007 species Species 0.000 description 21
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 17
- 230000015572 biosynthetic process Effects 0.000 description 17
- 229910052814 silicon oxide Inorganic materials 0.000 description 16
- 230000000694 effects Effects 0.000 description 15
- 238000005286 illumination Methods 0.000 description 11
- 238000000576 coating method Methods 0.000 description 8
- 229920002120 photoresistant polymer Polymers 0.000 description 8
- 239000002344 surface layer Substances 0.000 description 8
- 235000004263 Ocotea pretiosa Nutrition 0.000 description 7
- 239000011248 coating agent Substances 0.000 description 7
- 238000009434 installation Methods 0.000 description 7
- 229910015900 BF3 Inorganic materials 0.000 description 6
- 238000004380 ashing Methods 0.000 description 6
- 230000008859 change Effects 0.000 description 6
- 239000010410 layer Substances 0.000 description 6
- 229910052581 Si3N4 Inorganic materials 0.000 description 5
- 229910001423 beryllium ion Inorganic materials 0.000 description 5
- 238000001035 drying Methods 0.000 description 5
- 238000010894 electron beam technology Methods 0.000 description 5
- 238000005530 etching Methods 0.000 description 5
- 239000000463 material Substances 0.000 description 5
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 5
- 244000227633 Ocotea pretiosa Species 0.000 description 4
- HAYXDMNJJFVXCI-UHFFFAOYSA-N arsenic(5+) Chemical compound [As+5] HAYXDMNJJFVXCI-UHFFFAOYSA-N 0.000 description 4
- 238000009826 distribution Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 101100269850 Caenorhabditis elegans mask-1 gene Proteins 0.000 description 3
- 244000009660 Sassafras variifolium Species 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 3
- 238000001312 dry etching Methods 0.000 description 3
- 238000000996 ion projection lithography Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000003068 static effect Effects 0.000 description 3
- 239000000126 substance Substances 0.000 description 3
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 2
- 230000009471 action Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- WTEOIRVLGSZEPR-UHFFFAOYSA-N boron trifluoride Chemical compound FB(F)F WTEOIRVLGSZEPR-UHFFFAOYSA-N 0.000 description 2
- 239000002131 composite material Substances 0.000 description 2
- 230000006870 function Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910052737 gold Inorganic materials 0.000 description 2
- 239000010931 gold Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 150000004767 nitrides Chemical class 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- 210000003625 skull Anatomy 0.000 description 2
- HMUNWXXNJPVALC-UHFFFAOYSA-N 1-[4-[2-(2,3-dihydro-1H-inden-2-ylamino)pyrimidin-5-yl]piperazin-1-yl]-2-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)ethanone Chemical compound C1C(CC2=CC=CC=C12)NC1=NC=C(C=N1)N1CCN(CC1)C(CN1CC2=C(CC1)NN=N2)=O HMUNWXXNJPVALC-UHFFFAOYSA-N 0.000 description 1
- ZSLUVFAKFWKJRC-IGMARMGPSA-N 232Th Chemical compound [232Th] ZSLUVFAKFWKJRC-IGMARMGPSA-N 0.000 description 1
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 1
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 1
- 229910000521 B alloy Inorganic materials 0.000 description 1
- 235000014066 European mistletoe Nutrition 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001260 Pt alloy Inorganic materials 0.000 description 1
- 235000012300 Rhipsalis cassutha Nutrition 0.000 description 1
- 229910052776 Thorium Inorganic materials 0.000 description 1
- 229910052770 Uranium Inorganic materials 0.000 description 1
- 241000221012 Viscum Species 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- FFBHFFJDDLITSX-UHFFFAOYSA-N benzyl N-[2-hydroxy-4-(3-oxomorpholin-4-yl)phenyl]carbamate Chemical compound OC1=C(NC(=O)OCC2=CC=CC=C2)C=CC(=C1)N1CCOCC1=O FFBHFFJDDLITSX-UHFFFAOYSA-N 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000010924 continuous production Methods 0.000 description 1
- 230000003247 decreasing effect Effects 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 229910001873 dinitrogen Inorganic materials 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- RZDQHXVLPYMFLM-UHFFFAOYSA-N gold tantalum Chemical compound [Ta].[Ta].[Ta].[Au] RZDQHXVLPYMFLM-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 235000012149 noodles Nutrition 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- 238000005192 partition Methods 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- 238000011946 reduction process Methods 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 239000004576 sand Substances 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
- SBEQWOXEGHQIMW-UHFFFAOYSA-N silicon Chemical compound [Si].[Si] SBEQWOXEGHQIMW-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 229910001460 tantalum ion Inorganic materials 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 238000012549 training Methods 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 239000011800 void material Substances 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000009279 wet oxidation reaction Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
- H01L21/266—Bombardment with radiation with high-energy radiation producing ion implantation using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/30—Electron or ion beam tubes for processing objects
- H01J2237/317—Processing objects on a microscale
- H01J2237/31701—Ion implantation
- H01J2237/31706—Ion implantation characterised by the area treated
- H01J2237/3171—Ion implantation characterised by the area treated patterned
- H01J2237/31711—Ion implantation characterised by the area treated patterned using mask
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- High Energy & Nuclear Physics (AREA)
- General Physics & Mathematics (AREA)
- Toxicology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP6089399A JPH07296764A (ja) | 1994-04-27 | 1994-04-27 | イオン注入方法およびその装置 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| TW308708B true TW308708B (fr) | 1997-06-21 |
Family
ID=13969576
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW084104395A TW308708B (fr) | 1994-04-27 | 1995-05-02 |
Country Status (3)
| Country | Link |
|---|---|
| JP (1) | JPH07296764A (fr) |
| TW (1) | TW308708B (fr) |
| WO (1) | WO1995029505A1 (fr) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE102004058412B4 (de) | 2004-12-03 | 2017-03-02 | Austriamicrosystems Ag | Mehrfachmaske und Verfahren zur Herstellung unterschiedlich dotierter Gebiete und Verwendung des Verfahrens |
| JP5127148B2 (ja) | 2006-03-16 | 2013-01-23 | 株式会社日立ハイテクノロジーズ | イオンビーム加工装置 |
| US7727866B2 (en) * | 2008-03-05 | 2010-06-01 | Varian Semiconductor Equipment Associates, Inc. | Use of chained implants in solar cells |
| JP2013251088A (ja) * | 2012-05-31 | 2013-12-12 | Hitachi High-Technologies Corp | 荷電粒子装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5856422A (ja) * | 1981-09-30 | 1983-04-04 | Nippon Telegr & Teleph Corp <Ntt> | パタ−ン形成法 |
| JPH01246825A (ja) * | 1988-03-29 | 1989-10-02 | Toshiba Corp | 半導体装置の製造方法 |
| JPH027441A (ja) * | 1988-06-24 | 1990-01-11 | Nec Corp | 半導体装置の製造方法 |
| JPH0279411A (ja) * | 1988-09-14 | 1990-03-20 | Nippon Seiko Kk | マルチ荷電子ビーム露光装置 |
-
1994
- 1994-04-27 JP JP6089399A patent/JPH07296764A/ja active Pending
-
1995
- 1995-04-27 WO PCT/JP1995/000846 patent/WO1995029505A1/fr active Application Filing
- 1995-05-02 TW TW084104395A patent/TW308708B/zh active
Also Published As
| Publication number | Publication date |
|---|---|
| WO1995029505A1 (fr) | 1995-11-02 |
| JPH07296764A (ja) | 1995-11-10 |
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