TW303510B - The new tape automated bonding method with compound bump and its structure - Google Patents
The new tape automated bonding method with compound bump and its structure Download PDFInfo
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- TW303510B TW303510B TW85101716A TW85101716A TW303510B TW 303510 B TW303510 B TW 303510B TW 85101716 A TW85101716 A TW 85101716A TW 85101716 A TW85101716 A TW 85101716A TW 303510 B TW303510 B TW 303510B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/731—Location prior to the connecting process
- H01L2224/73101—Location prior to the connecting process on the same surface
- H01L2224/73103—Bump and layer connectors
- H01L2224/73104—Bump and layer connectors the bump connector being embedded into the layer connector
Abstract
Description
3〇asi〇 A7 ____B7_ 五、發明説明(/ ) 發明背景 本發明係有關於一種由導電粒子(Conductive Particle)與絕緣性黏著劑(Insulation Adhesive)所構成 之異方性導電膜(Anisotropic Conductive Film, ACF), 經由捲帶式晶粒接合(Tape Automated Bonding, TAB)方 法,使具有複合凸塊輸入/出焊墊之積體電路元件與金屬引腳陣 列(Lead Array )形成導電性接合。由於異方性導電膜的使 用,使得接合製程能提供較低之接合溫度、壓力及可信賴的封膠 (Encapsulation)結構。因積體電路元件上之複合凸塊輸入/ 出焊墊使接點能以較低之壓力完成。 習知技術 傳統的捲帶式晶粒接合方法必需以高溫讓金屬引腳陣列之內 引腳端與積體電路元件之金屬凸塊形成導電性接合。由於組裝元 件彼此間之熱膨脹係數(Coefficient of Thermal Expansion,CTE)差異,使得後續製程變得更困難;如外部引 腳與基板之對位接合。本發明是藉由曼直^1^聘的使用結合捲 帶式晶粒接合製程及積體電路元件上之複合凸塊輸入/出焊墊, 提供了避免此問題發生的方法。異方性導電膜是由導電粒子與絕 緣性黏著劑所構成的。 經濟部中央標準局員工消費合作社印製 (請先閱讀背面之注意事項再填寫本頁)3〇asi〇A7 ____B7_ V. Description of the invention (/) Background of the invention The present invention relates to an anisotropic conductive film (Anisotropic Conductive Film, composed of conductive particles (Inductive Particle) and insulating adhesive (Insulation Adhesive), ACF), through tape-on-die bonding (Tape Automated Bonding, TAB) method, the integrated circuit element with composite bump input / output pads and the lead array (Lead Array) form a conductive bond. Due to the use of anisotropic conductive film, the bonding process can provide a lower bonding temperature, pressure and a reliable Encapsulation structure. Due to the composite bump input / output pads on the integrated circuit components, the contacts can be completed with lower pressure. Conventional technology The traditional tape-and-reel die bonding method must use high temperature to form conductive bonds between the inner pin ends of the metal pin array and the metal bumps of the integrated circuit device. Due to the difference in the coefficient of thermal expansion (CTE) of the assembled components, the subsequent process becomes more difficult; for example, the external pins are bonded to the substrate in alignment. The present invention provides a method for avoiding this problem by using the combined tape-and-die bonding process and the composite bump input / output pads on the integrated circuit device by employing Mitsubishi. The anisotropic conductive film is composed of conductive particles and an insulating adhesive. Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page)
Tagosa等人在其所申請之專利(U.S. Pat. No. 4,963,002 )描述有關使用導電粒子與絕緣性黏著劑之接合結 構,Fujimoto在其所申請之專利( 3-6397,Japan)中則描述 了有關複合導電粒子、黏著劑層及翻轉式晶粒接合(Flip Chip Bond i ng )的方法。Tagosa et al. In its patent application (US Pat. No. 4,963,002) describe the use of conductive particles and insulating adhesive bonding structure, Fujimoto in its patent application (3-6397, Japan) describes the relevant Composite conductive particles, adhesive layer and flip chip bonding method.
Tsukagoshi等人在其所申請之專利(U.S. Pat. No. 5,001,542 )描述了由玻璃、合成樹脂、金屬、陶瓷或這些材 本紙張尺度適用中國國家梂準(CNS ) A4規格(210'〆29^^嫠) S〇35l〇 A7 ___5Z_ 五、發明説明(>) (請先閲讀背面之注意事項再填寫本頁) 料所混合組成之基板。Tsukagoshi等人用可變形的導電粒子、 硬的導電粒子及黏著劑所組成之材料形成導電接合。導電粒子是 金屬如鎳、銀及金。本案發明的專利申請是使用一種f複合凸p 在絕緣性黏著劑中之異方性導電膜。複合凸塊具有高分子本體, 表再面鍍上一層金屬之結構。The patent applied by Tsukagoshi et al. (US Pat. No. 5,001,542) describes that the paper standard of glass, synthetic resin, metal, ceramic or these materials is applicable to China National Standards (CNS) A4 specification (210'〆29 ^ ^ 嫠) S〇35l〇A7 ___5Z_ V. Description of the invention (>) (Please read the precautions on the back before filling this page). Tsukagoshi et al. Used a material composed of deformable conductive particles, hard conductive particles and adhesive to form a conductive bond. The conductive particles are metals such as nickel, silver and gold. The patent application for the invention of this case is to use an anisotropic conductive film of f composite convex p in insulating adhesive. The composite bump has a polymer body, and the surface is coated with a layer of metal.
Tsukagoshi等人在其所申請之專利(U. S. Pat. No 4,470,657 )中敘述以多種尺寸的導電粒子與黏著劑所構成的異 方性導電膜的用途。In his patent application (U.S. Pat. No 4,470,657), Tsukagoshi et al. Describe the use of an anisotropic conductive film composed of conductive particles and adhesives of various sizes.
Tsukagoshi等人在其所申請專利(U. S. Pat. No 4,731,282 )是有關於絕緣性黏著劑之敘述。 發明的簡要說明 傳統捲帶式晶粒接合(TAB)的結構如圖1所示,引腳陣列有 金屬引腳22 ;此金屬引腳可以是銅,金屬引腳是附著於第一種介 電層23 ;此介電層可以是聚乙醯氨(Polyimide),金屬引腳之 內端與金屬凸塊21;此金屬咅凸塊可以是金凸塊(AuTsukagoshi et al.'S patent application (U. S. Pat. No 4,731,282) is a description of insulating adhesives. Brief description of the invention The structure of a traditional tape-and-reel die bond (TAB) is shown in FIG. 1, the pin array has metal pins 22; this metal pin may be copper, and the metal pin is attached to the first dielectric Layer 23; the dielectric layer may be Polyimide (Polyimide), the inner end of the metal pin and the metal bump 21; the metal bump may be a gold bump (Au
Bump)。金凸塊是利用電鍍的方法鍍在積體電路元件20之氧化銘 輸入/出焊墊。熱能經由加熱頭(Thermode) 10以所設定之溫 度 '壓力及時間參數,傳遞至引腳陣列中之金屬引腳,使金屬引 經濟部中央標準局員工消費合作社印製 腳之內端22與金屬凸塊21形成導電性接合。 在傳統的捲帶式晶粒接合製程中高溫是必要的;通常是介於 450至550°C之間,如此才能使引腳陣列中之金屬引腳與積體電 路元件上之金屬凸塊形成導電性接合。銅^丨腳與介電層23之熱 膨脹係數差異,使得後續外部引腳與基板ϊϊί接合製程變得更 --〜---一 _。金屬凸塊本身之硬度會將加熱頭所施加之作用力傳至積體 電路元件,使氧化鋁焊墊發生破裂現象,爲避免此現象,控制加 本紙張尺度適用中國國家標準(CNS ) Α4規格(210Χ297公釐) -4- 經濟部中央標準局員工消費合作社印裝 A7 B7 五、發明説明(3 ) 熱頭端面之平面度(Planarity)及端面與金屬凸塊之平p度 (ParaUelTTin)變得非常重要,這將使設備的製造成本更加f 曼。傳統的捲帶式晶粒接合製程必需在製程之後進行封膠 (Ecapsulation)以避免濕氣造成腐蝕(Corrosion)而傷及 接點。 本案發明之主要目的在於提供低成本的捲帶式晶粒接合製 程。新製程使用較低之溫度及壓力,且在接點形成之同時完成封 膠保護作用。 本案發明之更進一步的目的在於提供低成本的捲帶式晶粒接 合結構,此結構是利用較低成本之捲帶式晶粒接合製程;以較_ϋ 之谭竺爸壓复,且在接點形座之^時完成封膠保gjM。 這些目的是藉由積體電路元件上之複合凸塊與由異方性導電 膜在製程上的使用而達成。異方性導電膜是由導電粒子與絕緣性 黏著劑所構成的,而複合凸塊具有高分子本體,表面再鍍上一 層金屬之結構。捲帶式晶粒接合製程完成後,異方性導電膜膜內 的導電粒子31便介於引腳陣列之金屬引腳22與導電金屬鍍層4 6之 間;如圖2A及2B所示。複合凸塊具有高分子本體47與導電金屬鍍 層46並且是長於積體電路元件之氧化鋁輸入/出焊墊上。導電粒 子與複合凸塊具有補償金凸塊與加熱頭之平行度變異,因此可以 減低接合製程所使用之壓力,大約是介於20至40kg/cm2。當導電 性接合形成時,絕緣性黏著劑32包覆在接點之四週形成封膠作 用’保護接點不因大量濕氣造成腐蝕及不受機械性之傷害。接合 製程所需之溫度介於150至1|C (黏著劑所承受之溫度)之 間’黏著劑在硬化(Curing)之後能使接點維持接肇狀態。 金屬引腳陣列可以是有空孔設計如圖2C所示,引腳陣列有金 屬引腳22 ;此金屬引腳可以是銅,金屬引脚附著於介電層23 ;此 介電層可以是聚乙醯氨,介電層內緣四週73有接合區域75,此接 --1 HI 1^1 —I— 1^1 ^^1. !-« 一 (請先聞讀背面之注意事項存填寫本萸) 訂Bump). The gold bumps are plated on the oxide input / output pads of the integrated circuit element 20 by electroplating. Heat energy is transferred to the metal pins in the pin array with the set temperature, pressure and time parameters through the heating head (Thermode) 10, so that the metal leads to the inner end 22 of the printed foot of the employee consumer cooperative of the Central Bureau of Standards and the metal The bump 21 forms a conductive bond. In the traditional tape-and-reel die bonding process, high temperature is necessary; usually between 450 and 550 ° C, so that the metal pins in the pin array and the metal bumps on the integrated circuit device are formed Conductive bonding. The difference in thermal expansion coefficient between the copper pin and the dielectric layer 23 makes the subsequent external pin-to-substrate bonding process more convenient. The hardness of the metal bumps will transfer the force exerted by the heating head to the integrated circuit components, causing the aluminum oxide pad to crack. To avoid this phenomenon, the paper size of the control plus the paper is applicable to the Chinese National Standard (CNS) Α4 specifications (210Χ297mm) -4- A7 B7 printed by the Employees ’Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economy V. Invention description (3) The flatness (Planarity) of the end face of the thermal head and the flatness (ParaUelTTin) of the end face and the metal bump change It is very important, which will make the manufacturing cost of the equipment more fman. The traditional tape-and-reel die bonding process must be encapsulated (Ecapsulation) after the process to prevent moisture from corroding and damaging the contacts. The main objective of the present invention is to provide a low-cost tape-die bonding process. The new process uses lower temperature and pressure, and completes the protection of the sealant at the same time as the contact is formed. A further object of the invention of the present invention is to provide a low-cost tape-and-reel die-bonding structure, which uses a lower-cost tape-reel-to-die bonding process; At the time of the dot-shaped seat, the sealant is completed to protect the gjM. These objectives are achieved through the use of composite bumps on integrated circuit devices and the use of anisotropic conductive films in the manufacturing process. The anisotropic conductive film is composed of conductive particles and insulating adhesive, and the composite bump has a polymer body, and the surface is coated with a layer of metal. After the tape-on die bonding process is completed, the conductive particles 31 in the anisotropic conductive film are interposed between the metal pins 22 of the pin array and the conductive metal plating 46; as shown in FIGS. 2A and 2B. The composite bump has a polymer body 47 and a conductive metal coating 46 and is longer than the alumina input / output pads of the integrated circuit element. The conductive particles and composite bumps compensate for the variation in parallelism between the gold bumps and the heating head, so the pressure used in the bonding process can be reduced to approximately 20 to 40 kg / cm2. When the conductive joint is formed, the insulating adhesive 32 is wrapped around the contact to form a sealant 'to protect the contact from corrosion and mechanical damage caused by a large amount of moisture. The temperature required for the bonding process is between 150 and 1 ° C (the temperature to which the adhesive bears). After the adhesive is cured, the contact can be maintained in the contact state. The metal pin array may have a hole design as shown in FIG. 2C. The pin array has metal pins 22; the metal pin may be copper, and the metal pin is attached to the dielectric layer 23; the dielectric layer may be a poly Acetamide, there is a bonding area 75 around the inner edge of the dielectric layer 73, this connection is --1 HI 1 ^ 1 —I— 1 ^ 1 ^^ 1.!-«1. (Please read the precautions on the back and fill in Benyu) set
經濟部中央標準局員工消費合作社印製 A7 ---------B7 五、發明説明(f) 合區域沒有介電層’內部引腳之尾端74向沒有介電層區域延伸。 此種形式之引腳陣列需使用一種由金屬箔片27與聚乙醸氨2 5所構 成之隔絕層,使加熱頭不致於和黏著劑作用。完成接合後之結構 如圖2A所示。 引腳陣列也可以是圖2D所表示的形式,此形式的引腳陣列無 空孔設計’金屬引腳22附著於整片的介電層23之上,此種形式的 金屬引腳陣列不需使用隔絕層於接合製程中。完成接合後之結構 如圖2B所示。 異方性導電膜所使用的絕緣性黏著劑可以是熱塑型 (Thermoplastic)、熱固型(Thermosetting)或是上述兩 種材料所混合構成的。導電粒子可以是金屬顆粒、石墨纖維或是 高分子本體,表面再鍍上一層金屬所成的複合導電粒子。 圖式的簡要說明 圖1表示捲帶式晶粒接合結構的習知技術。 圖2A表示用複合凸塊、異方性導電膜、有空孔設計之金屬引腳陣 列 及捲帶式晶粒接合方法形成的結構剖面圖。 圖2B表示用複合凸塊、異方性導電膜、無空孔設計之金屬引腳陣 列 及捲帶式晶粒接合方法形成的結構剖面圖。 圖2C表示有空孔設計的金屬引腳陣列之上視圖。 圖2D表示沒有空孔設計金屬引腳陣列之上視圖。 圖3A表示異方性導電膜貼在一顆有複合凸塊的積體電路元件上的 剖面圖。 圖3B表示加熱頭與貼在複合凸塊積體電路元件的異方性導電膜接 觸的剖面圖。 圖3C表示表面貼附有異方性導電膜的複合凸塊積體電路元件經加 本紙張尺度適用中國國家標準(CNS ) A4規格(2丨〇 X 297公釐) ---------- ·- (請先閱讀背面之注意事項再填寫本頁)Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs A7 --------- B7 V. Description of the invention (f) The combined area has no dielectric layer 'The tail end 74 of the internal pin extends to the area without the dielectric layer. In this form of pin array, an insulating layer consisting of metal foil 27 and polyethylene ammonia 25 is used to prevent the heating head from interacting with the adhesive. The completed structure is shown in Figure 2A. The pin array can also be in the form shown in FIG. 2D. This type of pin array has no void design. The metal pins 22 are attached to the entire dielectric layer 23. This type of metal pin array does not require Use an insulating layer in the bonding process. The completed structure is shown in Figure 2B. The insulating adhesive used for the anisotropic conductive film may be a thermoplastic type, a thermosetting type, or a mixture of the above two materials. The conductive particles can be metal particles, graphite fibers or a polymer body, and the surface is coated with a layer of metal composite conductive particles. BRIEF DESCRIPTION OF THE DRAWINGS FIG. 1 shows a conventional technique of tape-and-reel die bonding structure. Fig. 2A shows a cross-sectional view of a structure formed by a composite bump, an anisotropic conductive film, a metal pin array with a hole design, and a tape wound die bonding method. 2B shows a cross-sectional view of a structure formed by a composite bump, an anisotropic conductive film, a metal pin array with no void design, and a tape-and-reel die bonding method. 2C shows an upper view of a metal pin array with a hole design. FIG. 2D shows the top view of the metal pin array without holes. Fig. 3A shows a cross-sectional view of an anisotropic conductive film attached to an integrated circuit element having composite bumps. Fig. 3B shows a cross-sectional view of the contact between the heating head and the anisotropic conductive film attached to the composite bump integrated circuit element. Figure 3C shows the composite bump integrated circuit element with anisotropic conductive film attached to the surface. The size of the paper is applied to the Chinese National Standard (CNS) A4 specification (2 丨 〇X 297mm) ------- --- ·-(Please read the notes on the back before filling this page)
*1T A7 B7 五、發明説明(5* ) 熱頭預壓合(Pre-bonding)後之剖面圖。 圖3D表示有空孔設計的金屬引腳陣列置於有異方性導電膜之複合 凸塊積體電路元件表面上並對完成對位,此異方性導電膜已 完成預壓合。 圖3E表示以圖3D之結構再放置一片隔絕層於金屬引腳陣列之上, 加熱頭透過隔絕層加熱加壓。 圖4A表示有保護層的異方性導電膜貼附於無空孔設計金屬引腳陣 列的剖面圖。 圖4B表示加熱頭與無空孔設計金屬引腳陣列接觸的情形,此金屬 引腳陣列表面貼附一層有保護層的異方性導電膜。 圖4C表示貼附於金屬引腳陣列之異方性導電膜經預壓合並撕去表 面保護層之剖面圖。 圖4D表示使用複合凸塊積體電路元件、無空孔設計金屬引腳陣列 並在金屬引腳上加熱之捲帶式晶粒接合結構剖面圖。 圖4E表示使用複合凸塊積體電路元件、無空孔設計金屬引腳陣列 並在積體電路元件上加熱之捲帶式晶粒接合結構剖面圖。 圖5A表示異方性導電膜之結構剖面圖。 圖5B表示用於異方性導電膜內之石墨導電纖維形狀。 圖5C表示用於異方性導電膜內之金屬顆粒形狀。 經濟部中央標準局員工消費合作社印裝 (請先閱讀背面之注意事項再填寫本頁) 圖5D表示用於異方性導電膜內之複合導電粒子形狀,此複合導電 粒子內部爲一高分子本體,表面再鍍上一層導電金屬。 圖5E表示用於異方性導電膜內之多層複合導電粒子形狀,此多層 複合導電粒子爲複合導電粒子的表面再塗布另一種高分子之 結構。 圖6A表示有上下保護層的異方性導電膜之結構剖面圖。 圖6B表示只有單一保護層的異方性導電膜之結構剖面圖。 圖7表示無空孔設計金屬引腳陣列之上視圖。 本紙張尺度適用中國國家標準(CNS ) A4規格(210 X 297公釐) —tr — Α7 θ〇35^〇 Β7 五、發明説明(G) 最佳實施例的說明 請參閱圖2A,2C,3A至3E,5A至5E,6A及6B,說明利用複 合凸塊積體電路元件、異方性導電膜、有空孔設計金屬引腳陣列 及捲帶式晶粒接合方法所形成的接合結構之實施例。圖3A表示一 顆有複合凸塊46、47及48的積體電路元件20的剖面圖。複合凸 塊由高分子本體47 ;如polyamic acid polyimide,表面鍍上 一層金屬46 ;如鉻與金或鎳與金之複合組成。在此實施例中複合 凸塊是長在底層金屬墊46 ;如鋁,然而此底層金屬墊也可以不 用。複合凸塊之結構及製作方法描述在在美國專利號碼 5,393,697給張等人,1995年2月28日取得,列於參考資料內》 取適當長度之異方性導電膜30並置於積體電路元件20之表面,異 方性導電膜與複合凸塊上之金屬鍍層46接觸。異方性導電膜30是 由塗布在保護層51之上的絕緣性黏著劑3 2及分布於絕緣性黏著劑 之內的導電粒子31所構成,在此實施例保護層51爲polyester材 質。 圖5 A表示由導電粒子31及絕緣性黏著劑32但無介電層所組成 異方性導電膜30之結構剖面圖。圖5B至5E舉例說明一些導電粒子 之種類。導電粒子可以是圖5B所表示之石墨導電纖維44、圖5C之 金屬顆粒41、圖5D之複合導電粒子,此複合導電粒子內部爲一高 分子球體41表面鍍上一層導電金屬42'或圖5 E之多層複合導電 粒子形狀,此多層複合導電粒子爲高分子球體41表面鍍上一層導 電金屬表面再塗布另一種高分子43之結構。圖6A及6B則舉例說明 一些異方性導電膜的形式。如圖6A所示,由分布於絕緣性黏著劑 32之內的導電粒子31所構成的異方性導電膜30可有保護層51、 52覆蓋於異方性導電膜之兩側。如圖6B所示’由分布於絕緣性黏 著劑32之內的導電粒子31所構成的異方性導電膜30可有保護層 本紙張尺度適用中國國家榡準(CNS ) A4规格(210X297公嫠〉 (請先閱讀背面之注意事項再填寫本頁) -裝. 訂 經濟部中央標隼局員工消費合作社印製 經濟部中央標準局員工消費合作社印袋 A7 ___ B7____ 五、發明説明(7) 51覆蓋於異方性導電膜之單側。由圖5々可看出當依箭頭75的方向 施加壓力,只有順著箭頭的方向可導電,但垂直於箭頭的方向仍 然是絕緣。 參閱圖3B ’加熱頭與只有單邊保護層η之異方性導電膜3〇接 觸的剖面圖。加熱頭10能以所設定之溫度及壓力,傳遞熱能至與 加熱頭接觸之物體。加熱頭以溫度60至l〇〇°C、壓力5至10 kg/cm2及3至5秒的時間將異方性導電膜預熱。此預熱步驟使絕 緣性黏著劑輕微地流動並將複合凸塊46、47及48完全覆蓋,然後 將異方性導電膜之保護層51撕去,如圖3C所示。 接下來的步驟如圖3D所示,圖3D表示具有金屬導電引腳22之 引腳陣列貼附在第一種介電層23,置於有異方性導電膜30之上, 並使金屬導電引腳22之內端在積體電路元件20之複合凸塊46、 47及48上。在此實施例中之金屬導電引腳22是銅而蓋一種介電層 23是聚乙醯氨。引腳陣列之上視圖如圖2C所示。第一種介電層23 內緣四週73有接合區域75,此接合區域沒有介電層,內部引腳22 之尾端向沒有介電層區域延伸。內部引腳之尾端向沒有介電層區 域延伸之現象仍可在圖3D中發現。 下一步驟如圖3E所示,一種有金屬箔片27之隔絕層貼附於第 二種介電層25,在此實施例中,第二種介電層25是聚乙醢氨,其 厚度約爲70至75微米之間,而金屬箔片27是鋁,其厚度約爲30 至35微米之間。此隔絕層放置於空孔或沒有第一種介電層之引腳 陣列區域,在整個引腳陣列內部區域四周,靠近空孔邊界,隔絕 層之第二種介電層25與第一種介電層23接觸,隔絕層之第二種介 電層25將金屬箔片27與引腳陣列分開。 如圖3E所示,加熱頭10與隔絕層之金屬箔片27接觸’加熱頭 以溫度250至30(TC、壓力20至40kg/cm2及時間5至2G秒傳遞熱 能至隔絕層 '引腳陣列、複合凸塊及積體電路元件組裝如圖3E, 本紙張尺度適用中國國家標隼(CNS ) A4規格(21〇>< 297公釐) 一 1一 (請先閱讀背面之注意事項再填寫本頁) -裝· 訂 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明(8 ) 至此整個圖2A之接合結構完成。當此種組裝受壓力作用後,在弓丨 腳內端與複合凸塊之每一接合對間便有許多異方性導電膜內之導 電粒子31。導職子31使每一接合對之引腳內端與複合凸塊上的 金屬氣鼠。複合凸塊之金屬鍍層46與高分子本體47在接 點形成時因受力而變形。 在前述實施例中所形成之完整接合結構如圖2A所示,複合凸 塊46,47及48長於積體電路元件20之氧化鋁輸入/出焊墊之上, 複合凸塊已描述於前。引腳陣列之銅引腳22內端被定位以至於每 根引腳內端覆蓋於每個複合凸塊4 6, 4 7及48之金屬鍍層4 6之上並 形成接合對。當此種組裝受壓力作用後,在引腳內端與複合凸塊 金屬鍍層46之每一接合對間便有許多異方性導電膜內之導電粒子 31。導電粒子31使每一接合對之引腳內端與複合凸塊上的金屬鍍 層46能導電。複给凸塊之金屬鍍層46與高分子本體47在接點形成 時因受力而變形。隔絕層之第二種介電層25與異方性導電膜內之 絕緣性黏著劑及在空孔四週之第一種介電層23接觸。絕緣性黏著 劑因組裝過程中,加熱頭傳遞熱及壓力而流動,使接合結構封膠 並因黏著劑硬化使整個接合點得以保持導電接觸狀態。絕緣性黏 著劑 如 etiy1ene-viny1 acetate copolymer、 polyethylene ' ethylene-propylene copolymer、 acrylic rubber或其它類似之材料。這些高分子可以單獨使 用,也可以混合使用。,絕緣性黏著劑可以是熱塑型、熱固型或 是上述兩種材料所混合構成的。在此實施例中所使用之隔絕層是 厚度約爲30至35微米之間鋁箔27貼附於厚度約爲70至75微米之 間的高分子層25之上,也可以是Slicone Rubber貼附於高分子 層或其它類似材料之上。 接下來請參閱圖2B,2D,4A至4E,5A至5E,6A及6B,說明 利用異方性導電膜、無空孔設計金屬引腳陣列、有複合凸塊之積 本紙張尺度逋用中國國家標準(CNS ) A4規格(210X 297公釐) 一 [D — (請先閲讀背面之注意事項再填寫本頁) 裝. 訂 經濟部中央標準局員工消費合作社印製 A7 B7______ 五、發明説明(7 ) 體電路元件及捲帶式晶粒接合方法所形成的接合結構之實施例。 圖4A表示有單邊保護層51的異方性導電膜貼附於由第一種介 電層23及金屬引腳22之無空孔設計引腳陣列之上的剖面圖。圖2D 表示此實施例中之金屬引腳陣列上視圖。金屬引腳22貼附於第一 種介電層23之上,此介電層無空孔設計。金屬引腳之內端74貼附 於第一種介電層23之上。 圖5A表示由導電粒子31及絕緣性黏著劑32但無介電層所組成 異方性導電膜30之結構剖面圖。圖5B至5E舉例說明一些導電粒子 之種類。導電粒子可以是圖5B所表示之石墨導電纖維44、圖5C之 金屬顆粒41、圖5D之複合導電粒子’此複合導電粒子內部爲一高 分子球體41表面鍍上一層導電金屬42、或圖5 E之多層複合導電 粒子形狀,此多層複合導電粒子爲高分子球體41表面鎪上一層導 電金屬表面再塗布另一種高分子43之結構。圖6A及6B則舉例說明 一些異方性導電膜的形式。如圖6A所示,由分布於絕緣性黏著劑 32之內的導電粒子31所構成的異方性導電膜30可有保護層51 ' 52覆蓋於異方性導電膜之兩側。如圖6B所示,由分布於絕緣性黏 著劑32之內的導電粒子31所構成的異方性導電膜30可有保護層 51覆蓋於異方性導電膜之單側。由圖5A可看出當依箭頭75的方向 施加壓力,只有順著箭頭的方向可導電’但垂直於箭頭的方向仍 然是絕緣。 回到圖4A,取適當長度之異方性導電膜30並置於引腳陣列之 表面。有保護層51之異方性導電膜被置於引腳陣列之表面使絕緣 性黏著劑接觸並覆蓋於引腳陣列之引腳內端。具有金屬導電引腳 22之引腳陣列貼附在第一種介電層23。在此實施例中之金屬導電 引腳22是銅、第一種介電層23是聚乙醯氨而在異方性導電膜之保 護層材質爲polyester。絕緣性黏著劑可以是熱塑型、熱固型或 是上述兩種材料所混合構成的" 本紙張尺度適用中國國家榡隼(CNS ) A4規格(210X297公釐) 一}卜 (請先閱讀背面之注意事項再填寫本頁) 裝· 訂 經濟部中央標率局員工消費合作社印製 A7 B7_ 五、發明説明(㈧) 參閱圖4B,加熱頭與有保護層之異方性導電膜接觸,此種組 裝以溫度90至litre、壓力5至10 kg/cm2及3至5秒的時間將異 方性導電膜預熱。如圖4C所示,此預熱步驟使絕緣性黏著劑黏在 引腳陣列之內端,然後再將異方性導電膜之保護層撕去。 接下來的步驟如圖4D所示,將引腳陣列、異方性導電膜組裝 如圖4C,放置於體電路元件之上並完成定位,使每根引腳內端覆 蓋於每個複合凸塊46,47及48之金屬鍍層46之上並形成接合對。 當此種組裝受壓力作用後,在引腳內端與複合凸塊金屬鍍層46之 每一接合對間便有許多異方性導電膜內之導電粒子31。導電粒子 31使每一接合對之引腳內端與複合凸塊上的金屬鍍層46能導電。 如圖4D所示,加熱頭10與引腳陣列之第一種介電層23接觸, 加熱頭以溫度250至300°C、壓力20至40kg/cm2及時間5至20秒 對此種組裝加熱,完成後之接合結構如圖2B所示。複合凸塊之金 屬鍍層46與高分子本體47在接點形成時因受力而變形。 另一種接合的方法如圖4E所示,再將引腳陣列、異方性導電 膜組裝如圖4C,放置於體電路元件之上並完成定位,使每根引腳 內端覆蓋於每個複合凸塊46,4 7及48之金屬鍍層46之上並形成接 合對。當此種組裝受壓力作用後,在引腳內端與複合凸塊金屬鍍 層46之每一接合對間便有許多異方性導電膜內之導電粒子31。導 電粒子31使每一接合對之引腳內端與複合凸塊上的金屬鍍層46能 導電。在圖4E的方法中,加熱頭1〇與體電路元件20之背面接觸, 在電路元件20之另一面,複合凸塊46,47及48長於積體電路元件 20之氧化鋁輸入/出焊墊,加熱頭以溫度250至3GG°C、壓力20至 40kg/cm2及時間5至2〇秒對此種組裝加熱,完成後之接合結構如 H2B所示。複合凸塊之金屬鍍層46與高分子本體47在接點形成時 因受力而變形。 在前述實施例中所形成之完整接合結構如圖2B所示,複合凸 本紙張尺度適用中國國家橾準(CNS ) A4規格(210X297公釐) —11 一 ---------{•裝-- (請先閲讀背面之注意事項再填寫本頁) 訂 A7 B7 五、發明説明((丨) 塊46,47及48長於積體電路元件20之氧化鋁輸入/出焊墊。引腳 陣列之銅引腳22內端被定位,以至於每根引腳內端覆蓋於每個複 合凸塊46,47及48之金屬鍍層46之上並形成接合對。當此種組裝 受壓力作用後,在引腳內端與複合凸塊金屬鍍層46之每一接合對 間便有許多異方性導電膜內之導電粒子31。導電粒子31使每一接 合對之引腳內端與複合凸塊上的金屬鎪層46能導電。複合凸塊之 金屬鍍層46與高分子本體47在接點形成時因受力而變形。絕緣性 黏著劑因組裝過程中,加熱頭傳遞熱及壓力而流動,使接合結構 封膠並因黏著劑硬化使整個接合點得以保持導電接觸狀態。絕緣 性黏著劑是環氧樹脂(Epoxy),也可以是熱塑型、熱固型或是 上述兩種材料所混合構成的。 在此實施例之種方法及結構中,引腳陣列之引腳內端可以是 面矩陣方式如圖7所示。在引腳陣列中引腳22之引腳內端74貼附 於沒有空孔設計之第一種介電層23之上。在此例中,引腳22及引 腳內端74是銅。 雖然以上說明係以最佳實施例來敘述本發明的特徵,然而凡 熟知此技藝的人士均可以了解,尙有許多細節或形式的修改,仍 可能落於本發明的精神和範圍之內’因此本發明之範圍自不當限 於以上的實施例,而應以下列的專利申請範圍爲限。 (請先閱讀背面之注意事項再填寫本頁) 裝.* 1T A7 B7 V. Description of the invention (5 *) The cross-sectional view after the pre-bonding of the thermal head. Fig. 3D shows that the metal pin array with holes is placed on the surface of the composite bump integrated circuit element with an anisotropic conductive film and the alignment is completed. The anisotropic conductive film has been pre-laminated. FIG. 3E shows that another insulating layer is placed on the metal pin array in the structure of FIG. 3D, and the heating head is heated and pressed through the insulating layer. Fig. 4A shows a cross-sectional view of an anisotropic conductive film with a protective layer attached to a metal pin array with no holes. Fig. 4B shows a situation where the heating head is in contact with a metal pin array with no void design, and an anisotropic conductive film with a protective layer is attached to the surface of the metal pin array. Fig. 4C shows a cross-sectional view of the anisotropic conductive film attached to the metal pin array after pre-pressing and tearing off the surface protective layer. FIG. 4D shows a cross-sectional view of a tape-bonded die bonding structure using a composite bump integrated circuit device, a metal pin array without voids, and heating on the metal pins. Fig. 4E shows a cross-sectional view of a taped die bonding structure using a composite bump integrated circuit element, a metal pin array without voids, and heating on the integrated circuit element. 5A shows a cross-sectional view of the structure of an anisotropic conductive film. Fig. 5B shows the shape of the graphite conductive fiber used in the anisotropic conductive film. FIG. 5C shows the shape of metal particles used in the anisotropic conductive film. Printed by the Staff Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs (please read the precautions on the back before filling this page). Figure 5D shows the shape of the composite conductive particles used in the anisotropic conductive film. The composite conductive particles are inside a polymer body , The surface is coated with a layer of conductive metal. Fig. 5E shows the shape of the multi-layer composite conductive particles used in the anisotropic conductive film. The multi-layer composite conductive particles have a structure in which another polymer is coated on the surface of the composite conductive particles. 6A shows a cross-sectional view of the structure of an anisotropic conductive film with upper and lower protective layers. 6B shows a cross-sectional view of the structure of an anisotropic conductive film with only a single protective layer. Fig. 7 shows an upper view of a metal pin array with no holes. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210 X 297 mm) —tr — Α7 θ〇35 ^ 〇Β7 5. Description of the invention (G) Please refer to FIGS. 2A, 2C, 3A for description of the best embodiment To 3E, 5A to 5E, 6A and 6B, to illustrate the implementation of the bonding structure formed by the composite bump integrated circuit element, the anisotropic conductive film, the design of the metal pin array with holes, and the tape-and-reel die bonding method example. Fig. 3A shows a cross-sectional view of an integrated circuit element 20 having composite bumps 46, 47 and 48. Figs. The composite bump is composed of a polymer body 47; such as polyamic acid polyimide, which is coated with a layer of metal 46; such as chromium and gold or nickel and gold. In this embodiment, the composite bumps are grown on the underlying metal pad 46; such as aluminum, however, the underlying metal pad may not be used. The structure and manufacturing method of the compound bumps are described in US Patent No. 5,393,697 to Zhang et al., Obtained on February 28, 1995, and listed in the reference materials. Anisotropic conductive film 30 of appropriate length is taken and placed on an integrated circuit element On the surface of 20, the anisotropic conductive film is in contact with the metal plating layer 46 on the composite bump. The anisotropic conductive film 30 is composed of an insulating adhesive 32 coated on the protective layer 51 and conductive particles 31 distributed in the insulating adhesive. In this embodiment, the protective layer 51 is made of polyester material. Fig. 5A shows a cross-sectional view of the structure of an anisotropic conductive film 30 composed of conductive particles 31 and an insulating adhesive 32 without a dielectric layer. 5B to 5E illustrate some types of conductive particles. The conductive particles may be graphite conductive fibers 44 shown in FIG. 5B, metal particles 41 in FIG. 5C, and composite conductive particles in FIG. 5D. The composite conductive particles are coated with a layer of conductive metal 42 'on the surface of a polymer sphere 41 or FIG. 5 The shape of the multi-layer composite conductive particles of E. The multi-layer composite conductive particles have a structure in which a layer of conductive metal is coated on the surface of the polymer sphere 41 and then another polymer 43 is coated. 6A and 6B illustrate some forms of anisotropic conductive films. As shown in FIG. 6A, the anisotropic conductive film 30 composed of the conductive particles 31 distributed in the insulating adhesive 32 may have protective layers 51, 52 covering both sides of the anisotropic conductive film. As shown in FIG. 6B, the anisotropic conductive film 30 composed of conductive particles 31 distributed in the insulating adhesive 32 may have a protective layer. The paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297 public daughter) 〉 (Please read the precautions on the back before filling in this page)-Packing. Order the Ministry of Economy Central Standard Falcon Bureau Employee Consumer Cooperative to print the Ministry of Economy Central Standard Bureau Employee Consumer Cooperative Printed Bag A7 ___ B7____ V. Invention Instructions (7) 51 Covered on one side of the anisotropic conductive film. It can be seen from Figure 5々 that when pressure is applied in the direction of arrow 75, only the direction along the arrow can conduct electricity, but the direction perpendicular to the arrow is still insulated. See Figure 3B ' A cross-sectional view of the heating head in contact with the anisotropic conductive film 30 with only a single-side protective layer η. The heating head 10 can transfer thermal energy to an object in contact with the heating head at the set temperature and pressure. l〇〇 ° C, pressure 5 to 10 kg / cm2 and 3 to 5 seconds to preheat the anisotropic conductive film. This preheating step makes the insulating adhesive slightly flow and the composite bumps 46, 47 and 48 complete coverage, and then guide the heterosexuality The protective layer 51 of the film is torn off, as shown in FIG. 3C. The next steps are shown in FIG. 3D, which shows that the pin array with metal conductive pins 22 is attached to the first type dielectric layer 23 and placed There is an anisotropic conductive film 30, and the inner ends of the metal conductive pins 22 are on the composite bumps 46, 47, and 48 of the integrated circuit element 20. The metal conductive pins 22 in this embodiment are copper The dielectric layer 23 is made of polyethylene. The top view of the pin array is shown in FIG. 2C. The first dielectric layer 23 has a bonding area 75 around the inner edge 73. This bonding area has no dielectric layer. The tail end of the pin 22 extends toward the area without the dielectric layer. The phenomenon that the tail end of the inner pin extends toward the area without the dielectric layer can still be found in FIG. 3D. The next step is shown in FIG. 3E. The insulating layer of the sheet 27 is attached to the second dielectric layer 25. In this embodiment, the second dielectric layer 25 is polyvinyl acetate, and its thickness is between 70 and 75 microns, while the metal foil 27 is aluminum, and its thickness is about 30 to 35 microns. This isolation layer is placed in the hole or the pin array area without the first dielectric layer, in Around the inner area of the entire pin array, near the hole boundary, the second dielectric layer 25 of the insulating layer is in contact with the first dielectric layer 23, and the second dielectric layer 25 of the insulating layer connects the metal foil 27 and the lead The foot array is separated. As shown in FIG. 3E, the heating head 10 is in contact with the metal foil 27 of the insulating layer. The heating head transfers thermal energy to the insulating layer at a temperature of 250 to 30 (TC, pressure of 20 to 40 kg / cm2 and time of 5 to 2G seconds) 'Assembly of pin arrays, composite bumps and integrated circuit components is shown in Figure 3E. The paper size is applicable to the Chinese National Standard Falcon (CNS) A4 specification (21〇 < 297mm). 11 (Please read the back first Please pay attention to this page and then fill out this page)-Binding · Binding A7 B7 Printed by the Employees Consumer Cooperative of the Central Standards Bureau of the Ministry of Economic Affairs 5. Invention Instructions (8) So far, the entire joint structure of Figure 2A is completed. When this assembly is subjected to pressure, there are many conductive particles 31 in the anisotropic conductive film between each joint pair of the inner end of the arch foot and the composite bump. The guide member 31 makes the inner end of the pin of each bonding pair and the metal gas mouse on the composite bump. The metal plating layer 46 of the composite bump and the polymer body 47 are deformed by the force when the contact is formed. The complete bonding structure formed in the foregoing embodiment is shown in FIG. 2A. The composite bumps 46, 47, and 48 are longer than the aluminum oxide input / output pads of the integrated circuit element 20. The composite bumps have been described above. The inner ends of the copper pins 22 of the pin array are positioned so that the inner ends of each pin cover the metal plating 4 6 of each composite bump 4 6, 4 7 and 48 and form a bonding pair. When this type of assembly is subjected to pressure, there are many conductive particles 31 in the anisotropic conductive film between each pair of the inner end of the pin and the composite bump metal plating layer 46. The conductive particles 31 make the inner end of the lead of each bonding pair conductive to the metal plating layer 46 on the composite bump. The metal plating layer 46 of the re-bump and the polymer body 47 are deformed by the force when the contact is formed. The second dielectric layer 25 of the insulating layer is in contact with the insulating adhesive in the anisotropic conductive film and the first dielectric layer 23 around the hole. The insulating adhesive flows due to the heat and pressure transmitted by the heating head during the assembly process, so that the joint structure is sealed and the entire joint is maintained in conductive contact due to the hardening of the adhesive. Insulating adhesives such as etiy1ene-viny1 acetate copolymer, polyethylene 'ethylene-propylene copolymer, acrylic rubber or other similar materials. These polymers may be used alone or in combination. Insulating adhesive can be thermoplastic, thermosetting or a mixture of the above two materials. The insulating layer used in this embodiment is an aluminum foil 27 with a thickness of approximately 30 to 35 microns attached to the polymer layer 25 with a thickness of approximately 70 to 75 microns, or a Silicone Rubber attached to On the polymer layer or other similar materials. Next, please refer to Figures 2B, 2D, 4A to 4E, 5A to 5E, 6A and 6B to illustrate the use of anisotropic conductive films, void-free design of metal pin arrays, and composite bumps. National Standard (CNS) A4 specification (210X 297mm) I [D — (please read the precautions on the back before filling in this page). Packed. Printed A7 B7______ printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of invention ( 7) An embodiment of a bonding structure formed by a bulk circuit component and a tape-on die bonding method. FIG. 4A shows a cross-sectional view of an anisotropic conductive film with a single-sided protective layer 51 attached to a pin array formed by the first type dielectric layer 23 and the metal pin 22 without holes. FIG. 2D shows a top view of the metal pin array in this embodiment. The metal pin 22 is attached to the first dielectric layer 23, and the dielectric layer has no void design. The inner end 74 of the metal pin is attached to the first type dielectric layer 23. Fig. 5A shows a cross-sectional view of the structure of an anisotropic conductive film 30 composed of conductive particles 31 and an insulating adhesive 32 without a dielectric layer. 5B to 5E illustrate some types of conductive particles. The conductive particles may be graphite conductive fibers 44 shown in FIG. 5B, metal particles 41 in FIG. 5C, and composite conductive particles in FIG. 5D. The composite conductive particles are coated with a layer of conductive metal 42 on the surface of a polymer sphere 41, or FIG. 5 The shape of the multi-layer composite conductive particles of E is a structure in which a layer of conductive metal is coated on the surface of the polymer sphere 41 and then another polymer 43 is coated. 6A and 6B illustrate some forms of anisotropic conductive films. As shown in FIG. 6A, the anisotropic conductive film 30 composed of the conductive particles 31 distributed within the insulating adhesive 32 may have protective layers 51'52 covering both sides of the anisotropic conductive film. As shown in FIG. 6B, the anisotropic conductive film 30 composed of the conductive particles 31 distributed within the insulating adhesive 32 may have a protective layer 51 covering one side of the anisotropic conductive film. It can be seen from Fig. 5A that when pressure is applied in the direction of arrow 75, only the direction of the arrow can conduct electricity 'but the direction perpendicular to the arrow is still insulated. Returning to Fig. 4A, the anisotropic conductive film 30 of appropriate length is taken and placed on the surface of the pin array. An anisotropic conductive film with a protective layer 51 is placed on the surface of the pin array so that the insulating adhesive contacts and covers the inner ends of the pins of the pin array. The pin array with metal conductive pins 22 is attached to the first dielectric layer 23. In this embodiment, the metal conductive pins 22 are copper, the first dielectric layer 23 is polyethylene, and the protective layer material of the anisotropic conductive film is polyester. The insulating adhesive can be thermoplastic, thermosetting, or a mixture of the above two materials. &Quot; This paper size is applicable to the Chinese National Falcon (CNS) A4 specification (210X297 mm) 1) Bu (please read first (Notes on the back and then fill out this page) Packed and ordered A7 B7_ printed by the Employees ’Consumer Cooperative of the Central Standardization Bureau of the Ministry of Economic Affairs V. Description of the invention (㈧) Referring to FIG. 4B, the heating head is in contact with the anisotropic conductive film with a protective layer, This assembly preheats the anisotropic conductive film at a temperature of 90 to litre, a pressure of 5 to 10 kg / cm2, and a time of 3 to 5 seconds. As shown in FIG. 4C, this preheating step makes the insulating adhesive stick to the inner end of the pin array, and then tears off the protective layer of the anisotropic conductive film. The next steps are shown in Figure 4D. Assemble the pin array and the anisotropic conductive film as shown in Figure 4C. Place on the body circuit element and complete the positioning so that the inner end of each pin covers each compound bump 46, 47 and 48 are formed on the metal plating layer 46 and form a bonding pair. When this type of assembly is subjected to pressure, there are many conductive particles 31 in the anisotropic conductive film between each bonding pair of the inner end of the pin and the composite bump metal plating layer 46. The conductive particles 31 make the inner end of the lead of each bonding pair and the metal plating layer 46 on the composite bump conductive. As shown in FIG. 4D, the heating head 10 is in contact with the first type dielectric layer 23 of the pin array. The heating head heats this assembly at a temperature of 250 to 300 ° C, a pressure of 20 to 40 kg / cm2, and a time of 5 to 20 seconds. After the completion of the joint structure shown in Figure 2B. The metal plating layer 46 of the composite bump and the polymer body 47 are deformed by the force when the contact is formed. Another bonding method is shown in FIG. 4E, and then the pin array and the anisotropic conductive film are assembled as shown in FIG. 4C, placed on the body circuit component and positioned, so that the inner end of each pin covers each compound The bumps 46, 47, and 48 are formed on the metal plating layer 46 and form a bonding pair. When such an assembly is subjected to pressure, there are many conductive particles 31 in the anisotropic conductive film between each pair of the inner end of the pin and the composite bump metal plating layer 46. The conductive particles 31 make the inner end of the lead of each bonding pair conductive to the metal plating layer 46 on the composite bump. In the method of FIG. 4E, the heating head 10 is in contact with the back surface of the body circuit element 20, and on the other surface of the circuit element 20, the compound bumps 46, 47, and 48 are longer than the alumina input / output pads of the integrated circuit element 20. The heating head heats this assembly at a temperature of 250 to 3GG ° C, a pressure of 20 to 40kg / cm2, and a time of 5 to 20 seconds. The completed joint structure is shown in H2B. The metal plating layer 46 of the composite bump and the polymer body 47 are deformed by force when the contact is formed. The complete joint structure formed in the foregoing embodiment is shown in FIG. 2B, and the composite convex paper size is applicable to the Chinese National Standard (CNS) A4 specification (210X297mm) —11 1 .--------- { • Installation-(Please read the precautions on the back before filling in this page) Order A7 B7 5. Description of the invention ((丨) Blocks 46, 47 and 48 are longer than the aluminum oxide input / output pads of the integrated circuit element 20. Lead The inner ends of the copper pins 22 of the foot array are positioned so that the inner ends of each pin cover the metal plating 46 of each composite bump 46, 47 and 48 and form a bonding pair. When this type of assembly is subjected to pressure Then, there are many conductive particles 31 in the anisotropic conductive film between the inner end of the lead and each bonding pair of the composite bump metal plating layer 46. The conductive particles 31 make the inner end of the lead of each bonding pair and the composite convex The metal sulfide layer 46 on the block can conduct electricity. The metal plating layer 46 of the composite bump and the polymer body 47 are deformed by the force when the contact is formed. The insulating adhesive flows due to the heat and pressure transmitted by the heating head during the assembly process , To make the joint structure sealant and harden the adhesive so that the whole joint can be kept conductive Touching state. The insulating adhesive is epoxy resin (Epoxy), which can also be thermoplastic, thermosetting or a mixture of the above two materials. In the method and structure of this embodiment, the pin array The inner end of the pin can be in a surface matrix mode as shown in Figure 7. In the pin array, the inner end 74 of the pin 22 is attached to the first dielectric layer 23 without a hole design. Here In the example, the pin 22 and the inner end 74 of the pin are copper. Although the above description describes the features of the present invention in the preferred embodiment, anyone skilled in the art can understand that there are many modifications in details or forms , May still fall within the spirit and scope of the present invention '. Therefore, the scope of the present invention is inappropriately limited to the above embodiments, and should be limited to the following patent application scope. (Please read the precautions on the back before filling this page ) Installed.
、1T 經濟部中央標準局員工消費合作社印製 本紙張尺度適用中國國家標準(CNS ) A4規格(210X 297公釐) 一 / j 一, 1T Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) 1 / j 1
Claims (1)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US08/578,929 US5749997A (en) | 1995-12-27 | 1995-12-27 | Composite bump tape automated bonding method and bonded structure |
TW85101716A TW303510B (en) | 1996-02-08 | 1996-02-08 | The new tape automated bonding method with compound bump and its structure |
JP9004898A JPH09293749A (en) | 1995-12-27 | 1997-01-14 | Forming method of connecting structure body |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW85101716A TW303510B (en) | 1996-02-08 | 1996-02-08 | The new tape automated bonding method with compound bump and its structure |
Publications (1)
Publication Number | Publication Date |
---|---|
TW303510B true TW303510B (en) | 1997-04-21 |
Family
ID=51565861
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW85101716A TW303510B (en) | 1995-12-27 | 1996-02-08 | The new tape automated bonding method with compound bump and its structure |
Country Status (1)
Country | Link |
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TW (1) | TW303510B (en) |
-
1996
- 1996-02-08 TW TW85101716A patent/TW303510B/en not_active IP Right Cessation
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