TW302512B - Method for forming metal wiring of semiconductor device - Google Patents

Method for forming metal wiring of semiconductor device Download PDF

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Publication number
TW302512B
TW302512B TW085107810A TW85107810A TW302512B TW 302512 B TW302512 B TW 302512B TW 085107810 A TW085107810 A TW 085107810A TW 85107810 A TW85107810 A TW 85107810A TW 302512 B TW302512 B TW 302512B
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TW
Taiwan
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layer
aluminum alloy
alloy layer
item
deposited
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TW085107810A
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Chinese (zh)
Inventor
Heon-Do Kim
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Hyundai Electronics Ind
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76853—Barrier, adhesion or liner layers characterized by particular after-treatment steps
    • H01L21/76861—Post-treatment or after-treatment not introducing additional chemical elements into the layer
    • H01L21/76864—Thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76841—Barrier, adhesion or liner layers
    • H01L21/76843—Barrier, adhesion or liner layers formed in openings in a dielectric
    • H01L21/76847—Barrier, adhesion or liner layers formed in openings in a dielectric the layer being positioned within the main fill metal
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76877—Filling of holes, grooves or trenches, e.g. vias, with conductive material
    • H01L21/76882—Reflowing or applying of pressure to better fill the contact hole

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

A method for forming a metal wiring of a semiconductor device which involves a double aluminum alloy deposition, namely, a deposition of a first aluminum alloy layer to a thickness corresponding to a portion of the entire wiring thickness at a low temperature, in such a manner that it is fixed in the contact and deposition of a second aluminum alloy layer, to a thickness corresponding to the remaining wiring thickness portion which is deposited at a higher temperature. The deposition of the first aluminum alloy layer is carried out at a temperature of 25 to 150 deg.C and a pressure of 0.5 to 4.0 mTorrs using electric power of 5 to 10 KW whereas the deposition of the second aluminum alloy layer is carried out at a temperature of 200 to 400 deg.C and a pressure of not higher than 4.0 mTorrs using electric power of not more than 10 KW. The first aluminum alloy layer is also thermally treated at a temperature of 200 to 400 deg.C for 60 to 180 seconds prior to the deposition of the second aluminum alloy layer. In accordance with this method, it is possible to improve in step coverage, thereby improving the reliability of the wiring.

Description

A7 B7 經濟部中央標準局員工消費合作社印製 五、發明説明（ 本發明之麵 别瘴 本發明乃有關於形成半導体裝置之金屬繞線的方法，符，曹 使用雙層的鋁合金層以達到步驟改善之形成金屬繞線的方法1艨 先是在假凰睁沉一層鋁合金層,接著在的溫第 銘合金上彌第二層銘合金。 習嫌術/成時 爲了得到高度積体化的半露裝置，需要在麵_^辦來 通過多個叠層狀形成微接觸孔洞。雖然大家都知道使用鋁合 形成這樣的娜麵，雛方法的問題®^屬臟的價辦皮 於銘合金之衰退步驟範園和由於此衰退步驟範圍發生的總 現象而魏了。 繞線 換句話說，當鋁合金層在低溫度下沉積以形成微參摩_ 時，會發生嚴重的應力遷移現象&lt;因爲此原因，難以實 此方法。當鋁合金層在高溫沉積時，它會被截止或破壞。 即使鋁合金層的沉積在低溫和高溫之間的中間溫度’ # = 約3 0 0°C附近來實行’步驟範圍仍然很缺乏。結果’繞線的$ 了。 現在，不同的傳統方法將結合圖1A到1D加以詳述。 圖1A爲例舉在低溫下沉積銘合金形成繞線的截面視圖。如 圖1A中所示的，此金屬繞線的形成乃於導電繞線11之上首先 沉積絕緣層12。此絕緣層12接著使用接觸孔洞遮罩加以蝕 刻，直到導電層11暴露出來後即形成接觸孔洞。然後，接觸層 13在此合成結構之上以如T i/T i N的材料沉積。鋁合金層 ---------装------灯------線-- π请先閲_背希·χ·渾意爭續房填??本頁) 本纸張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明〇) 14於低溫度下在接觸層13之上沉積》最後，抗反射層16在 銘合1 4々卜-形.成° 然而，當鋁合金層如上面所述的在低溫下沉積時，如圖1 A 中所示的，它在上半部分和下半部分之間顯示出非常不均勻的步 驟範圍。結果，灘棚合金層1 4之上的贩射層1 6，很難 臓在接觸孔洞的底部。 圖1B爲例舉在高溫時沉積銘合金以形成繞線的截面視圖。 圖1B中，和圖1A中相當的元件以相同的號碼表示。如圖1B 中所示的，此金屬繞線首先由_絕緣層12到導電層1 1之上 而形成，緣層1 2接著被酿似形成攤孔洞。然後，娜層 1 3沉積到合成結構之上。第一層鋁合金層1 4於高溫下讎到 接觸層1 3之上。最後，層1 6形成娜合金層1 4之上。 此範例中，鋁合金層14在接觸孔洞的側壁會毀壞。此沉積的合 金可以參考圖1Β很容易的找到。結果此鋁合金層無法和沉積在 靠近接觸孔洞之導電層有電性上的連接。此外也很難沉積抗反射 層1 6 〇結果此繞線可能舖止。 圖1C的截面視圖爲例舉埋藏鎢層於接觸孔洞且_鋁合金 層在埋藏的鎢層之上以消除發生圖1Α和1Β之方法的截止繞線 現象。依照此方法，絕緣層3 2首先形成於導電層31之上。絕 緣層3 2接著移走不需要的部分以形成接觸孔洞。接觸層3 3接 著在合成結構的麵暴露表面上形成，包括接觸孔洞和絕緣層3 2的暴露表面。然後，埋藏的鎢層3 9於接觸孔洞中形成。在埋 藏的鎢層3 Θ之上，鋁合金層3 4依照物理或化學沉積方法沉積 CNS ) A4規格（210X 297公釐） --------.--^------ir------^ 0 (請先閲讀背面之注意事項再填寫本頁) 經濟部中央標準局員工消費合作社印裝 A7 B7 五、發明説明（j ) 其上。最後，抗反射層3 6沉積在鋁合金層3 4之上。然而，在 此範例中，鋁合金層表現出不好的步驟範圍。特別的是，鋁合金 層在接觸孔洞上有一個凹處的區域。結果很難實行接下來的方法 步驟。 另一方面，圖1 D爲例舉直接在低外觀比之接觸孔洞中_ 鋁合金層以形成纖的截面視圖《依照此方法，繊層4 2首先 在導電層41之上形成。絕緣層4 2接著把不需要的部分移除以 形成接觸孔洞。鋁合金層4 4接著以物理蒸氣沉積法沉積在合成 結構之上。最後，抗反射層4 6沉積在鋁合金層4 4之上。然而 於此範例中，鋁合金層表現出不好的步驟範圍，正如同上面所提 到的範例。 本發明之槪要 因此，本發明的目的就是要解決包含在習知技術中上面所提 到的問題且提供了形成半導体裝置之金屬繞線的方法，能夠利用 雙顯合金鍍層得到步驟範圍的改善，雙層鋁合金鍍層包括首先 在低溫時沉積第一層鋁合金層，然後在較高溫度時在第一層鋁合 金層社二廳合麵。 依照本發明的一個觀念，形成半導体裝置之金屬繞線的方法 包含的步驟爲；在導電層之上沉積絕緣層，且接著通過絕緣層形 成接觸孔洞；在接觸孔洞形成之後於整個結構之上形成一層薄的 接觸層；於低溫下在麵層之上形成第一層鋁合金層；熱處理第 一層鋁合金層；且於較高溫度下在第一層鋁合金層之上沉積第二 層銘合金層0 本紙張尺度適用中國國家標準（CNS ) Α4規格（210Χ 297公釐） t-- (請先閱讀背面之注意事項再填寫本頁)A7 B7 Printed by the Employee Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs 5. Description of the invention (The present invention is not good. The present invention is about a method of forming a metal winding of a semiconductor device. Steps to improve the method of forming a metal winding 1 is to first sink a layer of aluminum alloy on the fake phoenix, and then make a second layer of Ming alloy on the Wendi Ming alloy. In order to obtain a highly integrated semi-exposure The device needs to be formed on the surface _ ^ to form micro-contact holes through multiple layers. Although everyone knows that using aluminum alloy to form such a surface, the problem of the young method ® ^ is a dirty price for the decline of Ming alloy Step Fan Yuan and Wei due to the general phenomenon that occurred in this decay step range. Winding In other words, when the aluminum alloy layer is deposited at a low temperature to form a micro-parameter friction, a serious stress migration phenomenon will occur <because For this reason, it is difficult to implement this method. When the aluminum alloy layer is deposited at a high temperature, it will be cut off or destroyed. Even if the aluminum alloy layer is deposited at an intermediate temperature between low temperature and high temperature '# = about 3 0 0 ° C To implement the 'step range is still scarce. The result' winding is $. Now, different traditional methods will be described in detail in conjunction with Figures 1A to 1D. Figure 1A is an example of a cross-sectional view of the deposition of a Ming alloy at low temperature to form a winding As shown in FIG. 1A, the metal winding is formed by first depositing an insulating layer 12 on the conductive winding 11. The insulating layer 12 is then etched using a contact hole mask until the conductive layer 11 is exposed A contact hole is formed. Then, the contact layer 13 is deposited on the composite structure with a material such as Ti / Ti N. The aluminum alloy layer -------- installed ------ lamp --- --- Line-- πPlease read first_Back Greek · χ · Consequently fill in the room? This page) This paper scale is applicable to China National Standards (CNS) Α4 specifications (210Χ 297 mm) Central Standards of the Ministry of Economic Affairs A7 B7 printed by the Bureau ’s Consumer Cooperative. V. Description of the invention. 14) Deposited on the contact layer 13 at a low temperature. Finally, the anti-reflective layer 16 is in the shape of 14 mm. However, when aluminum alloy When the layer is deposited at low temperature as described above, as shown in Figure 1A, it shows a non-linearity between the upper and lower half The step range is often uneven. As a result, the launching layer 16 above the beach shed alloy layer 14 is difficult to fall on the bottom of the contact hole. FIG. 1B is an exemplary cross-sectional view of depositing a Ming alloy to form a winding at high temperature. In FIG. 1B, elements equivalent to those in FIG. 1A are indicated by the same numbers. As shown in FIG. 1B, this metal winding is first formed by the insulating layer 12 on top of the conductive layer 11 and the edge layer 12 is then formed as a spreading hole. Then, the Na layer 13 is deposited on the composite structure. The first aluminum alloy layer 14 is exposed to the contact layer 13 at high temperature. Finally, layer 16 is formed on top of alloy layer 14. In this example, the aluminum alloy layer 14 is destroyed on the side wall of the contact hole. This deposited alloy can be easily found with reference to Figure 1B. As a result, the aluminum alloy layer cannot be electrically connected to the conductive layer deposited near the contact hole. In addition, it is difficult to deposit an anti-reflection layer 160. As a result, the winding may be stopped. The cross-sectional view of FIG. 1C is an example in which a tungsten layer is buried in the contact hole and the aluminum alloy layer is over the buried tungsten layer to eliminate the cut-off winding phenomenon of the method of FIGS. 1A and 1B. According to this method, the insulating layer 32 is first formed on the conductive layer 31. The insulating layer 32 then removes unnecessary parts to form contact holes. The contact layer 33 is formed on the exposed surface of the composite structure, including the contact hole and the exposed surface of the insulating layer 32. Then, a buried tungsten layer 39 is formed in the contact hole. Above the buried tungsten layer 3 Θ, the aluminum alloy layer 3 4 is deposited according to physical or chemical deposition methods CNS) A4 specification (210X 297 mm) --------.-- ^ ------ ir ------ ^ 0 (Please read the precautions on the back before filling out this page) A7 B7 printed by the Consumer Cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs V. Invention description (j) on it. Finally, the anti-reflection layer 36 is deposited on the aluminum alloy layer 34. However, in this example, the aluminum alloy layer exhibits a poor step range. In particular, the aluminum alloy layer has a recessed area in the contact hole. As a result, it is difficult to carry out the next method steps. On the other hand, FIG. 1 D is an example of a cross-sectional view of an aluminum alloy layer formed directly in a contact hole with a low aspect ratio to form fibers. According to this method, the layer 42 is first formed on the conductive layer 41. The insulating layer 42 then removes unnecessary parts to form contact holes. The aluminum alloy layer 44 is then deposited on the composite structure by physical vapor deposition. Finally, the anti-reflection layer 46 is deposited on the aluminum alloy layer 44. However, in this example, the aluminum alloy layer exhibits a poor step range, just like the example mentioned above. Therefore, the object of the present invention is to solve the above-mentioned problems included in the conventional technology and provide a method of forming a metal winding of a semiconductor device, which can use double display alloy plating to obtain an improvement in the range of steps The double-layer aluminum alloy coating includes first depositing the first aluminum alloy layer at a low temperature, and then joining the second hall of the first aluminum alloy layer at a higher temperature. According to an aspect of the present invention, a method of forming a metal winding of a semiconductor device includes the steps of: depositing an insulating layer over the conductive layer, and then forming contact holes through the insulating layer; forming the entire structure after the contact holes are formed A thin contact layer; a first aluminum alloy layer is formed on the surface layer at a low temperature; a first aluminum alloy layer is heat-treated; and a second layer is deposited on the first aluminum alloy layer at a higher temperature Alloy layer 0 This paper scale is applicable to China National Standard (CNS) Α4 specification (210Χ 297mm) t-- (please read the precautions on the back before filling this page)

，1T 經濟部中央標準局員工消費合作社印製 A7 B7 五、發明説明（/^ ) 依照本發明的另一個觀念，形成半導体裝置之金屬繞線的方 法包含的步驟爲：在導電層之上沉積絕緣層，且接著通過絕緣層 形赚觸孔洞；於接觸孔洞形成之後在讎下赌成結構社形 成第一層銘合金層；熱處理第一層鋁合金層；並在較高溫度下於 第一賴合金層杜:二腦合鎌。 依照本發明的另一個觀念，形成半導体裝置之金屬繞線的方 法包含的步驟爲：在導電層之上沉積絕緣層，且接著通過絕緣層 形成接觸孔洞；雄觸孔洞形成之《^成結構杜形成一層薄 的接觸層；在接觸孔洞中形成_的鎢層；在形成第一層鋁合金 層之後娜溫時在合成結構之上形麟一層鋁合錄；熱處理第 —層鋁合金層；並在較高的溫度下於第一層鋁合金層之上形成第 二層鋁合細。 附圖之簡略說明 本發明的其他目的和觀念從下面描述的具体實施供1 並參考附 圖將更爲明顯，其中： 圖1A到1D爲例舉使用不同的傳統方法形成金屬繞線的截 面視圖； 圖2 A到2 D的截面視圖爲依照本發明的第一個具体實施 例，例舉形成半導体裝置之金屬繞線之方法的系列步驟； 圖3爲依照本發明的第二個具体實施例形成鋁合金繞線的截 面視圖：且 圖4爲依照本發明的第三個具体實施例彫成鋁合金繞線的截 面視圖。 本紙張尺度適用中國國家標準（CNS ) A4規格（210X297公董〉 n I II 裝 I I I 訂 I 線 (請先閱讀背面之注意事項再填寫本頁) 經濟部中央標率局員工消費合作社印製 A7 B7 五、發明説明（f ) 雛實腦之詳細說明 圖2 A到2 D的截面視圖爲依照本發明的第一個具体實施 例，例舉形成半導体裝置之金屬繞線之方法的系歹!1步驟； 依此方法，纖層2首先沉積在導電層1之上，如圖2 A中 所示。絕緣層2接著使用接觸孔洞遮罩加以融刻直到導電層暴露 出來。例如T i或丁 i N層的接觸層3則形颇此合成結構上。 接觸層3依照物理或化學蒸氣沉積法其沉積的厚度不超過1 Ο Ο Ο A。接觸層3接著在溫度範圍從3 0 0°C到6 0 (TC之間 退火。 然後，第一層銘合金層4沉積在合成結構之上，如圖2 B中 所示。第一層鋁合金層4的沉積乃於相當低的2 5到1 5 0°C的 溫度下，壓力0.5到4.0 mTorrs，使用5到1 OKW的電力得到 的。第一層鋁合金層4的厚度相當於整個鋁合金層厚度的1/3 到 1/2。 由於第一層鋁合金層4有相當低的熱能，它很難在接觸孔洞 中遷移。也就是說，第一層鋁合金層4以固定的狀態維持在接觸 洞中，且有著非常小的晶粒。 在低溫下沉積的第一層鋁合金層4接著撤口熱，口熱過程 可在相同的空腔中在2 0 0到4 0 0°C的溫度下維持6 0到1 8 0秒加熱晶粒而得到，正如同用來_第一層鋁合金層4或其它 的鋁合金沉積空腔。在熱處理後得到的合成結構如圖2 C中所 示。由於此熱處理，第一層鋁合金層4有較大的晶粒'第一層鋁 合金層4在接觸孔洞的上半端區域也有平滑彎曲的輪廓。然後， 裝 訂 線 (請先閲讀背面之注意事項再填寫本頁) 本紙張尺度適用中國國家標準（CNS ) A4規格（210X 297公釐） 經濟部中央標準局員工消費合作杜印製 S0S512 a? B7 五、發明説明（L ) 和第一層銘合金層4有著相同材料的第二層鋁合金層5，如圖2 D中所示的，沉稹在第一層銘合金層之上。此過程在由於眞空產 生讎層的破壞時，乃於麟的酿2 0 0到4 5 CTC和不大於 4.0 mTorr的壓力下使用小於1 OKW的電力來完成的。最後， 抗反射薄膜6沉積在第二層銘合金層5之上。由於第二層鋁合金 層5的_在高溫下完成，第二層鋁合金層5在沉積時有高流動 性。結MIS合金在攤吼洞的上半部分之區域沒有籍納現象。 用在第二層鋁合金層麵的溫翻電力可依照接觸孔洞的大 小和形態而不同。 層6由例如T i N，S i或S i ON組成。 上述的具体實施例中，固定在接觸孔洞中的第一層銘合金層 4，被當成核心製造層。由於第二層銘合金層5在高溫時沉積於 核心製造層之上，鋁合金層5被截止的問題可以解決。 圖3的截面視圖爲例丨舉鋁合金繞線由接觸孔洞中形成埋藏鎢 層所產生，且依照本發明的第二個具体實施例將鋁合金層彷讀在 埋藏的鎢層之上。圖3中，相當於圖1C中的元件分別標以相同 的參考號碼。依照圖3中所示的方法，絕緣層3 2首先在導電層 31之上形成。絕緣層3 2接著移走不需要的部分，因而形成接 觸孔洞。接觸層3 3接著在合成結構的整個暴露表面上形成，包 括接觸孔洞和絕緣層的暴露表面。然後，麵的鎢層3 9形成於 接觸孔洞之中。第一層鋁合金層3 4’接著沉積在埋藏的鎢層3 Θ °第一層鋁合麵3 4 ’的沉_在酿2 5到1 5 0 °C和歷 力〇 . 5到4 · 0 mToir，使用5到10KW的電力來完成的。 本紙張尺度適用中國國家榡準（CNS ) A4現格（210X297公釐） I 裝 訂 線 (請先閱讀背面之注意事項再填寫本頁), 1T Printed by the Ministry of Economic Affairs Central Standards Bureau Employee Consumer Cooperative A7 B7 V. Description of the invention (/ ^) According to another concept of the present invention, the method of forming a metal winding of a semiconductor device includes the steps of: depositing on a conductive layer Insulation layer, and then make contact holes through the shape of the insulation layer; after the contact holes are formed, the first layer of Ming alloy layer is formed at 閠 下 負 成 社 社; heat treatment of the first layer of aluminum alloy layer; and at a higher temperature in the first Lai alloy layer Du: Two brains combined sickle. According to another concept of the present invention, the method of forming a metal winding of a semiconductor device includes the steps of: depositing an insulating layer on the conductive layer, and then forming a contact hole through the insulating layer; Forming a thin contact layer; forming a tungsten layer in the contact hole; forming a layer of aluminum on the composite structure after the first layer of aluminum alloy layer is formed by Na Wen; heat treating the first layer of aluminum alloy layer; and At a higher temperature, a second aluminum alloy layer is formed on the first aluminum alloy layer. BRIEF DESCRIPTION OF THE DRAWINGS Other objects and concepts of the present invention will be more apparent from the specific implementation described below with reference to the drawings, in which: FIGS. 1A to 1D are cross-sectional views illustrating the formation of metal windings using different traditional methods. 2 is a cross-sectional view of A to 2 D according to the first embodiment of the present invention, exemplifying a series of steps of the method of forming a metal winding of a semiconductor device; FIG. 3 is a second embodiment of the present invention Cross-sectional view of forming an aluminum alloy winding: and FIG. 4 is a cross-sectional view of an aluminum alloy winding carved according to a third specific embodiment of the present invention. This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X297 company director) n I II Pack III Order I line (please read the precautions on the back before filling this page) A7 printed by the Employee Consumer Cooperative of the Central Bureau of Standards and Statistics of the Ministry of Economic Affairs B7 5. Description of the invention (f) Detailed description of the young brain Figure 2 A to 2 D are cross-sectional views according to the first specific embodiment of the present invention, exemplifying the method of forming a metal winding of a semiconductor device. Step 1: According to this method, the fiber layer 2 is first deposited on the conductive layer 1, as shown in Figure 2 A. The insulating layer 2 is then etched using a contact hole mask until the conductive layer is exposed. For example, Ti or D i The contact layer 3 of the N layer is shaped like a synthetic structure. The thickness of the contact layer 3 deposited by physical or chemical vapor deposition method does not exceed 1 Ο Ο Ο A. The contact layer 3 is then in the temperature range from 300 ° C To 60 ° C (annealed between TC. Then, the first layer of alloy 4 is deposited on the composite structure, as shown in Figure 2B. The first layer of aluminum alloy layer 4 is deposited at a relatively low 1 5 0 ° C, pressure 0.5 to 4.0 mTorrs, use 5 to 1 OKW The thickness of the first aluminum alloy layer 4 is equivalent to 1/3 to 1/2 of the thickness of the entire aluminum alloy layer. Because the first aluminum alloy layer 4 has a relatively low thermal energy, it is difficult to be in the contact hole Migration. That is to say, the first aluminum alloy layer 4 is maintained in the contact hole in a fixed state, and has very small grains. The first aluminum alloy layer 4 deposited at a low temperature then withdraws heat, mouth heat The process can be obtained by heating the grains in the same cavity at a temperature of 200 to 400 ° C for 60 to 180 seconds, just as used for the first aluminum alloy layer 4 or other Aluminum alloy deposition cavity. The resulting structure after heat treatment is shown in Figure 2C. Due to this heat treatment, the first aluminum alloy layer 4 has larger grains. The first aluminum alloy layer 4 is in the contact hole The upper half of the area also has a smooth curved contour. Then, the binding line (please read the precautions on the back before filling in this page) This paper scale is applicable to the Chinese National Standard (CNS) A4 specification (210X 297 mm) Employees of the Central Standards Bureau of the Ministry of Economic Affairs Consumer Cooperation Du Printed S0S512 a? B7 V. Description of Invention (L) and Article One layer of Ming alloy layer 4 has a second layer of aluminum alloy layer 5 of the same material, as shown in Figure 2D, Shen Zhen is on top of the first layer of Ming alloy layer. This process is caused by the destruction of the crust layer due to the void. It is done by Yulin ’s brewing at 200 C to 4 5 CTC and a pressure not greater than 4.0 mTorr using power less than 1 OKW. Finally, the anti-reflection film 6 is deposited on the second layer of Ming alloy layer 5. Since the The second aluminum alloy layer 5 is completed at a high temperature, and the second aluminum alloy layer 5 has high fluidity during deposition. The junction MIS alloy has no phenomenon of inclusion in the upper half of the hall. The temperature-turning power used in the second aluminum alloy layer may vary according to the size and shape of the contact hole. Layer 6 is composed of, for example, Ti N, Si, or Si ON. In the above-mentioned specific embodiment, the first alloy layer 4 fixed in the contact hole is regarded as the core manufacturing layer. Since the second alloy layer 5 is deposited on the core manufacturing layer at high temperature, the problem of the aluminum alloy layer 5 being cut off can be solved. The cross-sectional view of FIG. 3 is an example. The aluminum alloy winding is produced by forming a buried tungsten layer in a contact hole, and the aluminum alloy layer is imitated on the buried tungsten layer according to the second embodiment of the present invention. In Fig. 3, the components corresponding to those in Fig. 1C are marked with the same reference numbers. According to the method shown in FIG. 3, the insulating layer 32 is first formed on the conductive layer 31. The insulating layer 32 then removes unnecessary parts, thereby forming contact holes. The contact layer 33 is then formed on the entire exposed surface of the composite structure, including the exposed surface of the contact hole and the insulating layer. Then, a surface tungsten layer 39 is formed in the contact hole. The first layer of aluminum alloy layer 3 4 'is then deposited on the buried tungsten layer 3 Θ ° The first layer of aluminum alloy surface 3 4' of Shen_zai 2 5 to 1 5 0 ° C and Li 〇. 5 to 4 · 0 mToir, using 5 to 10KW of electricity to complete. This paper size is applicable to China National Standard (CNS) A4 format (210X297mm) I Binding line (please read the precautions on the back before filling this page)

Claims (1)

經濟部中央標準局員工消費合作社印製 A8 B8 C8 D8 六、申請專利範圍 1 娜成半導條置技屬纖的方法，包含的步驟爲： 在導電層之上沉積絕緣層，且接著通過絕緣層形成接觸孔 洞； 孔洞形成之雖構社形成薄的接觸層； 在》f於麵層;形麟一翻合金層； 熱處理第一層銘合金層；且 ^^鹏時於第一層鋁合娜之上沉讎二層鋁合鎌。 2·如申請專利範圍第1項之方法，其中第一層鋁合金層的厚度 相當於整個鋁合金層厚度的1/3到1/2。 3 ·如申請W(J範圍第1項之方法，其中第一層鋁合金層的沉積 乃於2 5到1 5 0〇C的. 5到4 . 0 mTorrs的壓力下使 用5到10 KW的電力來完成的。 4 .如申請專利範圍第1項之方法，其中第一層銘合金層的熱處 在2 0 0到4 0 CTC的酿持續6 0到1 8 0秒來完成的。 5 ·如申請猜f|範圔第1項之方法，其中第二層鋁合金層的沉積 乃在2 0 0到4 0 0°C的溫度和不大於4 . 0 mTorrs的壓力，使 用小於10 KW的電力來實行的。 6 娜成半置総的方法，包含的步驟爲： 在導電層上沉積絕緣層，且通過絕緣層形成接觸孔洞； 在接觸孔洞形成之後得到低溫下於合成結構之上形成第一層 鋁合金層： 熱處層銘合錄；且 據高雛時於第一®g合錄社沉積第二層鋁合金層。 I I I I I I裝 —訂— 線 (請先閱讀背面之注意事項再填寫本頁) 本紙張尺度逋用中國國家標準（CNS ) A4規格（210X：297公釐Μ A8 B8 C8 D8 經濟部中央標準局員工消費合作社印製 六、申請專利範圍 7. —娜成半纖的方法，包含的步驟爲： 在導電層之上沉積絕緣層，且接著通過絕緣層形成接觸孔 洞； 在接觸孔洞形成之後得到合成結構杜形成的薄接觸層； 在接觸孔洞中形成埋藏的鶴層； 在第一層鋁合金膨成之後得到低鹏齡成結構之上形成 的第一層鋁合金層； 熱處麟一獅合錄；且 «^酿時於第一臟合金層上二継合錄。 8. 如申請專利範圍第7項之方法，其中第一層鋁合金層的厚度 相當於整個鋁合金層厚度的1/3到1/2 〇 Θ .如申請專利範圍第7項之方法，其中第一層鋁合金層的沉積 在雛2 5到1 5 CTC和0 · 5到4 . 0 mTorrs的壓力，使用5 到10 KW的電力完成。 10·如申請專^範圍第7項之方法，其中第一層銘合金層之熱 處1^5在2 0 0到4 0 (TC的續6 0到1 8 0秒完成的。 11 .如申請專利範圍第7項之方法，其中第二層銘合金層的$ ^7&gt;在_2 0 0到4 0 0°C和不高於4 · 0 niTorrs的壓力，使 用小於10 KW的電力來完成的。 ---------^------,ΤΓ------線---- 一 · (請先閲读背面之注意事項再填寫本頁) 本纸張尺度適用中國國家標準（CNS ) Α4規格（210X297公釐）2·A8 B8 C8 D8 is printed by the employee consumer cooperative of the Central Bureau of Standards of the Ministry of Economic Affairs. 6. Scope of patent application 1 The method of placing semi-conducting strips into technical fibers includes the steps of: depositing an insulating layer on top of the conductive layer and then passing the insulation The layer forms a contact hole; although the hole is formed, a thin contact layer is formed; the surface layer is formed in f; the alloy layer is shaped; the first alloy layer is heat-treated; and the first layer is aluminum alloyed On Shen Na, she is a two-layer aluminum sickle. 2. The method as claimed in item 1 of the patent application, wherein the thickness of the first aluminum alloy layer corresponds to 1/3 to 1/2 of the thickness of the entire aluminum alloy layer. 3. As in the method of application W (J range item 1, where the first aluminum alloy layer is deposited at 25 to 1 500 ℃. 5 to 4.0 mTorrs pressure using 5 to 10 KW Electricity to complete. 4. The method as claimed in item 1 of the patent application, in which the first layer of Ming alloy layer is hot at 200 to 40 CTC brewing lasts 60 to 180 seconds to complete. 5 · If you apply the method of guessing f | fan, item 1, the second aluminum alloy layer is deposited at a temperature of 200 to 400 ° C and a pressure not greater than 4.0 mTorrs, using less than 10 KW The electric power is implemented. 6 The method of forming a semi-conductor, including the steps of: depositing an insulating layer on the conductive layer and forming a contact hole through the insulating layer; after the contact hole is formed, it is formed on the composite structure at a low temperature The first layer of aluminum alloy layer: the hot spot layer inscription; and the second layer of aluminum alloy layer was deposited in the first ®g joint record company according to Gao Hsin. IIIIII binding—binding—line (please read the precautions on the back before filling in this Page) This paper uses the Chinese National Standard (CNS) A4 specification (210X: 297mm Μ A8 B8 C8 D8 economy Printed by the Central Bureau of Standards' Staff Consumer Cooperative 6. Scope of patent application 7.-Method for forming semi-fibers, including the steps of: depositing an insulating layer on the conductive layer, and then forming contact holes through the insulating layer; forming in the contact holes After that, a thin contact layer formed by the synthetic structure is formed; a buried crane layer is formed in the contact hole; after the first aluminum alloy is expanded, the first aluminum alloy layer formed on the low-pengling structure is obtained; One lion; and «^ 2 on the first dirty alloy layer when brewing. 8. As in the method of patent application item 7, where the thickness of the first aluminum alloy layer is equivalent to the thickness of the entire aluminum alloy layer 1/3 to 1/2 〇Θ. The method as claimed in item 7 of the patent application, in which the first aluminum alloy layer is deposited at a pressure of 2 5 to 15 CTC and 0.5 to 4.0 mTorrs, Use 5 to 10 KW of electric power to complete. 10. As in the application of the method of item 7 of the special ^ scope, where the heat of the first layer of the alloy layer is 1 ^ 5 at 2 0 0 to 4 0 (TC's continuation 6 0 to 1 80 seconds to complete. 11. As in the method of applying for patent scope item 7, in which the second layer The Ming alloy layer of $ ^ 7> at _2 0 0 to 4 0 0 ° C and no more than 4 · 0 niTorrs pressure, using less than 10 KW of electricity to complete. --------- ^ ------, ΤΓ ------ 线 ---- 1. · (Please read the precautions on the back before filling in this page) This paper size is applicable to China National Standard (CNS) Α4 specification (210X297 Mm) 2 ·
TW085107810A 1995-06-30 1996-06-28 Method for forming metal wiring of semiconductor device TW302512B (en)

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