TW282560B - Fabrication method of lightly doped drain transistor device - Google Patents

Fabrication method of lightly doped drain transistor device

Info

Publication number
TW282560B
TW282560B TW84113683A TW84113683A TW282560B TW 282560 B TW282560 B TW 282560B TW 84113683 A TW84113683 A TW 84113683A TW 84113683 A TW84113683 A TW 84113683A TW 282560 B TW282560 B TW 282560B
Authority
TW
Taiwan
Prior art keywords
polysilicon
heavily doped
drain
gate oxide
forming
Prior art date
Application number
TW84113683A
Other languages
English (en)
Inventor
Jenn-Tsong Shyu
Original Assignee
United Microelectronics Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by United Microelectronics Corp filed Critical United Microelectronics Corp
Priority to TW84113683A priority Critical patent/TW282560B/zh
Application granted granted Critical
Publication of TW282560B publication Critical patent/TW282560B/zh

Links

Landscapes

  • Insulated Gate Type Field-Effect Transistor (AREA)
TW84113683A 1995-12-21 1995-12-21 Fabrication method of lightly doped drain transistor device TW282560B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
TW84113683A TW282560B (en) 1995-12-21 1995-12-21 Fabrication method of lightly doped drain transistor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
TW84113683A TW282560B (en) 1995-12-21 1995-12-21 Fabrication method of lightly doped drain transistor device

Publications (1)

Publication Number Publication Date
TW282560B true TW282560B (en) 1996-08-01

Family

ID=51397712

Family Applications (1)

Application Number Title Priority Date Filing Date
TW84113683A TW282560B (en) 1995-12-21 1995-12-21 Fabrication method of lightly doped drain transistor device

Country Status (1)

Country Link
TW (1) TW282560B (zh)

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